Feb.1999
BuP EuP BvP EvP BwPEwP
BuN EuN BvN EvN BwN EwN
P
N
UVW
P
N
10
102±
0.5
6146146 17 4–φ5.5
7–M4
74±0.25
8.5
17 30
12
24.5
27 30
43 16.5
91
±0.5
22 20 20 22 2
80±
0.25
11
30
+1.5
–0.5
29.5
7
LABEL
Tab#110, t=0.5
8.1
P
N
BuP
EuP
BuN
EuN
U
BvP
EvP
BvN
EvN
V
BwP
EwP
BwN
EwN
W
P
N
OUTLINE DRAWING & CIRCUIT DIAGRAM Dimensions in mm
APPLICATION
Inverters, Servo drives, DC motor controllers, NC equipment, Welders
QM50TF-HB
•ICCollector current .......................... 50A
•VCEX Collector-emitter voltage ........... 600V
•hFE DC current gain.............................750
•Insulated Type
•UL Recognized
Yellow Card No. E80276 (N)
File No. E80271
MITSUBISHI TRANSISTOR MODULES
QM50TF-HB
MEDIUM POWER SWITCHING USE
INSULATED TYPE
Note: All Transistor Units are 3-Stage Darlingtons.
Feb.1999
Symbol
VCEX (SUS)
VCEX
VCBO
VEBO
IC
–IC
PC
IB
–ICSM
Tj
Tstg
Viso
—
—
Parameter
Collector-emitter voltage
Collector-emitter voltage
Collector-base voltage
Emitter-base voltage
Collector current
Collector reverse current
Collector dissipation
Base current
Surge collector reverse current
(forward diode current)
Junction temperature
Storage temperature
Isolation voltage
Mounting torque
Weight
Ratings
600
600
600
7
50
50
310
3
500
–40~+150
–40~+125
2500
0.98~1.47
10~15
1.47~1.96
15~20
660
Conditions
IC=1A, VEB=2V
VEB=2V
Emitter open
Collector open
DC
DC (forward diode current)
TC=25°C
DC
Peak value of one cycle of 60Hz (half wave)
Charged part to case, AC for 1 minute
Main terminal screw M4
Mounting screw M5
Typical value
ABSOLUTE MAXIMUM RATINGS (Tj=25°C, unless otherwise noted)
Unit
V
V
V
V
A
A
W
A
A
°C
°C
V
N·m
kg·cm
N·m
kg·cm
g
MITSUBISHI TRANSISTOR MODULES
QM50TF-HB
MEDIUM POWER SWITCHING USE
INSULATED TYPE
ELECTRICAL CHARACTERISTICS (Tj=25°C, unless otherwise noted)
Unit
mA
mA
mA
V
V
V
—
µs
µs
µs
°C/W
°C/W
°C/W
Limits
Min.
—
—
—
—
—
—
750
—
—
—
—
—
—
Symbol
ICEX
ICBO
IEBO
VCE (sat)
VBE (sat)
–VCEO
hFE
ton
ts
tf
Rth (j-c) Q
Rth (j-c) R
Rth (c-f)
Parameter
Collector cutoff current
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
Base-emitter saturation voltage
Collector-emitter reverse voltage
DC current gain
Switching time
Thermal resistance
(junction to case)
Contact thermal resistance
(case to fin)
Test conditions
VCE=600V, VEB=2V
VCB=600V, Emitter open
VEB=7V
IC=50A, IB=67mA
–IC=50A (diode forward voltage)
IC=50A, VCE=2.5V
VCC=300V, IC=50A, IB1=100mA, IB2=–1.0A
Transistor part (per 1/6 module)
Diode part (per 1/6 module)
Conductive grease applied (per 1/6 module)
Typ.
—
—
—
—
—
—
—
—
—
—
—
—
—
Max.
1.0
1.0
80
2.5
3.0
1.8
—
2.0
8.0
3.0
0.4
1.3
0.2
Feb.1999
0
10
–1
10
–3
10
–2
10
0
10
–1
10
7
5
4
3
2
–2
10
7
5
4
3
2
2.2 2.6 3.0 3.4 3.8 4.2
V
CE
=2.5V
T
j
=25°C
4
10
7
5
4
3
2
3
10
7
5
4
3
2
2
10
0
10
23457
1
10
23457
2
10
V
CE
=2.5V
T
j
=25°C
T
j
=125°C
V
CE
=5.0V
1
10
7
5
4
3
2
0
10
7
5
4
3
2
–1
10
0
10
23457
1
10
23457
2
10
V
CE(sat)
V
BE(sat)
T
j
=25°C
T
j
=125°C
I
B
=67mA
100
80
60
40
20
001 2 3 4 5
T
j
=25°C
I
B
=150mA
I
B
=100mA
I
B
=50mA
I
B
=10mA
I
B
=20mA
0
753275327532
5
4
3
2
1
444
IC=10A
Tj=25°C
Tj=125°C
IC=50A
IC=25A
1
10
7
5
4
3
2
0
10
7
5
4
3
2
–1
10
0
10
23457
1
10
23457
2
10
t
f
t
on
T
j
=25°C
T
j
=125°C I
B2
=–1.0A
V
CC
=300V
I
B1
=100mA
t
s
PERFORMANCE CURVES
COMMON EMITTER OUTPUT
CHARACTERISTICS (TYPICAL)
COMMON EMITTER INPUT
CHARACTERISTIC (TYPICAL)
SATURATION VOLTAGE
CHARACTERISTICS (TYPICAL)
COLLECTOR-EMITTER SATURATION
VOLTAGE (TYPICAL)
SWITCHING TIME VS. COLLECTOR
CURRENT (TYPICAL)
DC CURRENT GAIN VS.
COLLECTOR CURRENT (TYPICAL)
COLLECTOR CURRENT IC (A)
DC CURRENT GAIN hFE
COLLECTOR-EMITTER VOLTAGE VCE (V) COLLECTOR CURRENT IC (A)
BASE CURRENT IB (A)
COLLECTOR-EMITTER SATURATION
VOLTAGE VCE (sat) (V)
SATURATION VOLTAGE VCE (sat), VBE (sat) (V)SWITCHING TIME ton, ts, tf (µs)
COLLECTOR CURRENT IC (A)BASE-EMITTER VOLTAGE VBE (V)
BASE CURRENT IB (A) COLLECTOR CURRENT IC (A)
MITSUBISHI TRANSISTOR MODULES
QM50TF-HB
MEDIUM POWER SWITCHING USE
INSULATED TYPE
Feb.1999
–3
10 –2
10 –1
10
0
10 1
10
0
10
2
10
1
10
0
10
0
10 1
10 2
10 3
10
–1
10
1
10
7
5
4
3
2
0
10
7
5
4
3
2
–1
10 –1
10 23457 0
10 23457 1
10
Tj=25°C
Tj=125°C
VCC=300V
IC=50A
IB1=100mA
tf
ts
160
40
00 100 800
120
80
300 400 500
140
100
60
20
Tj=125°C
IB2=–1.5A
IB2=–3.5A
200 600 700
100
90
60
40
20
00 16020 40 60 80 100 120 140
80
10
70
50
30
2
10
1
10
7
5
4
3
2
0
10
7
5
4
3
2
0.2 0.6 1.0 1.4 1.8 2.2
Tj=25°C
Tj=125°C
753275327532
0.5
0.4
0.3
0.1
0
444
23457
0.2
32 457
COLLECTOR
DISSIPATION
SECOND
BREAKDOWN
AREA
753275327532
7
5
3
2
7
5
3
2
7
5
3
2
444
TC=25°C
1ms
DC
10ms
100µs
500µs
NON–REPETITIVE
SWITCHING TIME VS. BASE
CURRENT (TYPICAL)
REVERSE BIAS SAFE OPERATING AREA
SWITCHING TIME ts, tf (µs)
COLLECTOR-EMITTER VOLTAGE VCE (V)BASE REVERSE CURRENT –IB2 (A)
FORWARD BIAS SAFE OPERATING AREA DERATING FACTOR OF F. B. S. O. A.
COLLECTOR-EMITTER VOLTAGE VCE (V) CASE TEMPERATURE TC (°C)
REVERSE COLLECTOR CURRENT VS.
COLLECTOR-EMITTER REVERSE
VOLTAGE (DIODE FORWARD
CHARACTERISTICS) (TYPICAL)
TRANSIENT THERMAL IMPEDANCE
CHARACTERISTIC (TRANSISTOR)
COLLECTOR-EMITTER REVERSE VOLTAGE
–VCEO (V)
TIME (s)
COLLECTOR CURRENT IC (A)
COLLECTOR CURRENT IC (A)DERATING FACTOR (%)COLLECTOR REVERSE CURRENT –IC (A)
MITSUBISHI TRANSISTOR MODULES
QM50TF-HB
MEDIUM POWER SWITCHING USE
INSULATED TYPE
Zth (j–c) (°C/ W)
Feb.1999
0
10
1
10
0
10
–3
10
–2
10
–1
10
2
10
1
10
0
10
0
10
1
10
2
10
3
10
2
10
1
10
0
10
–1
10
–1
10
2
10
1
10 75432
0
10 75432
0
100
200
300
400
500
753275
32
7532
2.0
1.6
1.2
0.8
0.4
0
444
23457
32
754
753275327532
7
5
3
2
7
5
3
2
7
5
3
2
444
I
rr
t
rr
Q
rr
I
B2
=–1.0A
T
j
=25°C
T
j
=125°C
V
CC
=300V
I
B1
=100mA
Irr (A), Qrr (µc)
SURGE COLLECTOR REVERSE CURRENT
–ICSM (A)
TRANSIENT THERMAL IMPEDANCE
CHARACTERISTIC (DIODE)
RATED SURGE COLLECTOR REVERSE CURRENT
(DIODE FORWARD SURGE CURRENT)
REVERSE RECOVERY CHARACTERISTICS
OF FREE-WHEEL DIODE (TYPICAL)
CONDUCTION TIME (CYCLES AT 60Hz) FORWARD CURRENT IF (A)
TIME (s)
MITSUBISHI TRANSISTOR MODULES
QM50TF-HB
MEDIUM POWER SWITCHING USE
INSULATED TYPE
Zth (j–c) (°C/ W)
trr (µs)
