BC368
NPN General Purpose Amplifier
This device is designed for general purpose medium power
amplifiers and switches requiring collector currents to 1.5 A.
Sourced from Process 37.
Absolute Maximum Ratings* T A = 25°C unless otherwise noted
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations
Thermal Characteristics T A = 25°C unless otherwise noted
Symbol Characteristic Max Units
BC368
PDTotal D evice Dissipation
Derate above 25°C625
5.0 mW
mW/°C
RθJC Therma l Resista n ce, Junction to Case 83.3 °C/W
RθJA Thermal Resistance, Junctio n to Ambien t 200 °C/W
BC368
Symbol Parameter Value Units
VCEO Collector-Em itter Vol t age 20 V
VCES Collector-Base Voltage 25 V
VEBO Emitter-Base Voltage 5.0 V
ICCollector Current - Continuous 2.0 A
TJ, Tstg Operating and Storage Junction Temperature Range -55 to +150 °C
BCETO-92
1997 Fairchild Semiconductor Corporation
3
Electrical Characteristics T A = 25°C unless otherwise noted
OFF CHARACTERISTICS
Symbol Parameter Test Conditions Min Max Units
ON CHARACTERISTICS
hFE DC Current Gain IC = 5.0 mA, VCE = 10 V
IC = 0.5 A, VCE = 1.0 V
IC = 1.0 A, VCE = 1.0 V
50
85
60 375
VCE(sat)Collecto r-Emitter Saturation Voltage IC = 1.0 A, IB = 100 mA 0.5 V
VBE(on)Base-Emitter On Voltag e IC = 1.0 A, VCE = 1.0 V 1.0 V
SMALL SIGNAL CHARACTERISTICS
fTCurrent Gain - Bandwidth Product IC = 10 mA, VCE = 5.0 V,
f = 35 MHz 45 MHz
V(BR)CEO Collector-Emitter Breakdown Voltage IC = 10 mA, IB = 020V
V(BR)CES Collector-Base Breakdown Voltage IC = 100
µ
A, IE = 0 25 V
V(BR)EBO Emitter-Base Breakdown Voltage IE = 10
µ
A, IC = 0 5.0 V
ICBO Collecto r-Cutoff Current VCB = 25 V, IE = 0
VCB = 25 V, IE = 0, TA = 150°C10
1.0
µ
A
mA
IEBO Emi t t er-Cutoff Current VEB = 5.0 V, IC = 0 10
µ
A
Typical Characteristics
Typi cal Pu lsed C urr ent Gain
vs Collector Curren t
0.001 0.01 0.1 1
0
100
200
300
400
500
I - COLLE CTOR CURRE NT (A)
h - TYPI CA L PULSED CU RR EN T GA IN
FE
- 40 °C
25 °C
C
V = 5V
CE
125 °C
Col lect o r-Emitter Satur at ion
Vo ltage vs C o ll ector Cu r rent
0.01 0.1 1
0.01
0.1
1
I - COLLECTOR CURRENT (A)
V - COLLECTOR-EMITTER VOLTAGE (V)
CESAT
C
β= 10
125 °C
- 4 0 °C
25 °C
BC368
NPN General Purpose Amplifier
(continued)
BC368
Power Dissipation vs
A mb ient Temp erature
0 25 50 75 100 125 150
0
100
200
300
400
500
600
700
TE M PERATURE ( C)
P - P OWE R DIS SIPATI ON ( mW)
D
o
TO-92
NPN General Purpose Amplifier
(continued)
Typical Characteristics (continued)
C ollecto r-Base Capaci tance
vs Collector-Ba se Voltag e
0 4 8 1216202428
0
10
20
30
40
V - COLLECTO R- B A S E VOLTAGE ( V )
- COLLE CTOR-BASE CA PAC I TANCE (p F )
CB
OBO
Gain Bandwidth Product
vs Co ll ec tor Curr e nt
1 10 100 1000
0
100
200
300
400
500
I - COLLECTOR CURRENT ( mA)
h - GAIN BANDW IDTH PRODUCT (MHz)
C
FE
V = 10V
CE
Colle c t or- Cutof f Curre nt
vs Amb ien t Temper ature
25 50 75 100 125 150
0.1
1
10
100
T - AM BIENT TE MPE RATUR E ( C )
I - COLLECTOR CURRENT (nA)
A
V = 20V
CB
°
CBO
B ase-Emit ter ON Vo ltag e vs
Co llector Current
1 10 100 1000
0.2
0.4
0.6
0.8
1
I - COLLECTOR CURRENT (mA)
V - BA SE-EMIT TER ON VOLTAG E (V)
BE(O N)
125 °C
- 4 0 °C
25 °C
C
V = 5V
CE
B ase-Emitter Saturati o n
Vo lta g e vs C o llect o r C u rren t
0.01 0.1 1
0.2
0.4
0.6
0.8
1
1.2
1.4
I - COLLECTOR C U RRENT (A)
V - BA SE-EMITTER VOLTAGE (V)
BESAT
C
β= 10
125 °C
- 40 °C
25 °C
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not intended to be an exhaustive list of all such trademarks.
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FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:
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systems which, (a) are intended for surgical implant into
the body, or (b) support or sustain life, or (c) whose
failure to perform when properly used in accordance
with instructions for use provided in the labeling, can be
reasonably expected to result in significant injury to the
user.
2. A critical component is any component of a life
support device or system whose failure to perform can
be reasonably expected to cause the failure of the life
support device or system, or to affect its safety or
effectiveness.
PRODUCT ST A TUS DEFINITIONS
Definition of Terms
Datasheet Identification Product Status Definition
Advance Information
Preliminary
No Identification Needed
Obsolete
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
Formative or
In Design
First Production
Full Production
Not In Production
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OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT
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