SiZF300DT www.vishay.com Vishay Siliconix Dual N-Channel 30 V (D-S) MOSFET with Schottky Diode FEATURES PowerPAIR(R) 3 x 3F TrenchFET(R) Gen IV power MOSFET SkyFET(R) low side MOSFET with integrated Schottky 100 % Rg and UIS tested Internally connected half-bridge configuration in 3.3 mm-by-3.3 mm footprint * Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 * * * * D1 S2 3.3 mm 1 1 2 G 3 S /D 1 4 S /D 1 2 1 2 G2 mm 3.3 Top View APPLICATIONS Bottom View * CPU core power PRODUCT SUMMARY VDS (V) RDS(on) max. () at VGS = 10 V RDS(on) max. () at VGS = 4.5 V Qg typ. (nC) ID (A) a Configuration N-Channel 1 MOSFET CHANNEL-1 CHANNEL-2 30 0.00450 0.00700 6.9 75 30 0.00184 0.00257 19.4 141 * Computer / server peripherals GHS/G1 G1Return/S1 * POL VIN/D1 VSW/S1-D2 * Synchronous buck converter * Telecom DC/DC Schottky Diode GLS/G2 N-Channel 2 MOSFET Dual GND/S2 ORDERING INFORMATION Package Lead (Pb)-free and halogen-free PowerPAIR 3 x 3F SiZF300DT-T1-GE3 ABSOLUTE MAXIMUM RATINGS (TA = 25 C, unless otherwise noted) PARAMETER Drain-source voltage Gate-source voltage Continuous drain current (TJ = 150 C) SYMBOL VDS VGS TC = 25 C TC = 70 C TA = 25 C TA = 70 C Pulsed drain current (t = 100 s) ID IDM Continuous source-drain diode current TC = 25 C TA = 25 C IS Single pulse avalanche current Single pulse avalanche energy L = 0.1 mH IAS EAS TC = 25 C TC = 70 C Maximum power dissipation TA = 25 C TA = 70 C Operating junction and storage temperature range Soldering recommendations (peak temperature) d, e PD CHANNEL-1 30 +20, -16 75 60 23 b, c 18 b, c 150 44 3.4 b, c 14 9.8 48 31 3.8 b, c 2.4 b, c TJ, Tstg CHANNEL-2 30 +16, -12 141 113 34 b, c 27 b, c 200 105 6.2 b, c 16 12.8 74 47 4.3 b, c 2.8 b, c -55 to +150 260 UNIT V A mJ W C THERMAL RESISTANCE RATINGS PARAMETER SYMBOL CHANNEL-1 TYP. 26 2 MAX. 33 2.6 CHANNEL-2 TYP. 23 1.3 MAX. 29 1.7 UNIT t 10 s RthJA Maximum junction-to-ambient b, f C/W Maximum junction-to-case (source) Steady state RthJC Notes a. TC = 25 C b. Surface mounted on 1" x 1" FR4 board c. t = 10 s d. See solder profile (www.vishay.com/doc?73257). The PowerPAIR 3 x 3F is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components f. Maximum under steady state conditions is 66 C/W for channel-1 and 67 C/W for channel-2 S18-0479-Rev. A, 30-Apr-2018 Document Number: 76288 1 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiZF300DT www.vishay.com Vishay Siliconix SPECIFICATIONS (TJ = 25 C, unless otherwise noted) PARAMETER Static SYMBOL TEST CONDITIONS VDS VGS = 0 V, ID = 250 A VGS(th) VDS = VGS, ID = 250 A Gate-source leakage IGSS VDS = 0 V, VGS = +20 V, -16 V VDS = 0 V, VGS = +16 V, -12 V Zero Gate voltage drain current IDSS Drain-source breakdown voltage Gate-source threshold voltage VDS = 30 V, VGS = 0 V VDS = 30 V, VGS = 0 V, TJ = 55 C On-state drain current b Drain-source on-state resistance b Forward transconductance b ID(on) RDS(on) gfs VDS 5 V, VGS = 10 V VGS = 10 V, ID = 10 A VGS = 10 V, ID = 10 A VGS = 4.5 V, ID = 7 A VGS = 4.5 V, ID = 7 A VDS = 10 V, ID = 20 A VDS = 10 V, ID = 20 A MIN. TYP. MAX. Ch-1 Ch-2 Ch-1 Ch-2 Ch-1 Ch-2 Ch-1 Ch-2 Ch-1 Ch-2 Ch-1 Ch-2 Ch-1 Ch-2 Ch-1 Ch-2 Ch-1 Ch-2 30 30 1.1 1.0 10 10 - 30 150 0.00330 0.00160 0.00490 0.00210 60 90 2.2 2.2 100 100 1 350 5 3000 0.00450 0.00184 0.00700 0.00257 - Ch-1 Ch-2 Ch-1 Ch-2 Ch-1 Ch-2 Ch-1 Ch-2 Ch-1 Ch-2 Ch-1 Ch-2 Ch-1 Ch-2 Ch-1 Ch-2 Ch-1 Ch-2 Ch-1 Ch-2 Ch-1 Ch-2 Ch-1 Ch-2 Ch-1 Ch-2 Ch-1 Ch-2 Ch-1 Ch-2 Ch-1 Ch-2 Ch-1 Ch-2 Ch-1 Ch-2 - 1100 3150 530 1550 40 170 0.036 0.054 14.4 41 6.9 19.4 3.1 7.1 1.5 3.8 13 40 0.7 0.62 17 25 40 53 23 30 7 12 11 13 5 20 23 32 5 6 0.072 0.108 22 62 10.5 29 1.4 1.2 35 50 80 110 45 60 15 25 20 25 10 40 45 65 10 15 UNIT V nA A A S Dynamic a Input capacitance Ciss Output capacitance Coss Reverse transfer capacitance Crss Channel-1 VDS = 15 V, VGS = 0 V, f = 1 MHz Channel-2 VDS = 15 V, VGS = 0 V, f = 1 MHz Crss/Ciss ratio VDS = 15 V, VGS = 10 V, ID = 10 A Total gate charge Qg Channel-1 VDS = 15 V, VGS = 4.5 V, ID = 10 A Gate-source charge Qgs Gate-drain charge Qgd Channel-2 VDS = 15 V, VGS = 4.5 V, ID = 10 A Output charge Qoss VDS = 15 V, VGS = 0 V Gate resistance Rg f = 1 MHz td(on) Channel-1 VDD = 15 V, RL = 3 ID 5 A, VGEN = 4.5 V, Rg = 1 Turn-on delay time Rise time Turn-off delay time Fall time Turn-on delay time Rise time Turn-off delay time Fall time S18-0479-Rev. A, 30-Apr-2018 tr td(off) tf td(on) tr td(off) tf Channel-2 VDD = 15 V, RL = 3 ID 5 A, VGEN = 4.5 V, Rg = 1 Channel-1 VDD = 15 V, RL = 3 ID 5 A, VGEN = 10 V, Rg = 1 Channel-2 VDD = 15 V, RL = 3 ID 5 A, VGEN = 10 V, Rg = 1 0.14 0.12 - pF nC ns Document Number: 76288 2 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiZF300DT www.vishay.com Vishay Siliconix SPECIFICATIONS (TJ = 25 C, unless otherwise noted) PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT Drain-Source Body Diode Characteristics Continuous source-drain diode current Pulse diode forward current a ISM Body diode voltage VSD Body diode reverse recovery time trr Body diode reverse recovery charge Qrr Reverse recovery fall time ta Reverse recovery rise time tb Ch-1 - - 44 Ch-2 - - 105 Ch-1 - - 150 Ch-2 - - 200 IS = 5 A, VGS = 0 V Ch-1 - 0.75 1.1 IS = 5 A, VGS = 0 V Ch-2 - 0.44 0.7 Ch-1 - 36 75 Ch-2 - 46 90 Ch-1 - 26 55 Ch-2 - 40 80 Ch-1 - 16 - Ch-2 - 18 - Ch-1 - 20 - Ch-2 - 28 - TC = 25 C IS Channel-1 IF = 10 A, di/dt = 100 A/s, TJ = 25 C Channel-2 IF = 10 A, di/dt = 100 A/s, TJ = 25 C A V ns nC ns Notes a. Guaranteed by design, not subject to production testing b. Pulse test; pulse width 300 s, duty cycle 2 % Stresses beyond those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. S18-0479-Rev. A, 30-Apr-2018 Document Number: 76288 3 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiZF300DT www.vishay.com Vishay Siliconix CHANNEL-1 TYPICAL CHARACTERISTICS (25 C, unless otherwise noted) Axis Title 100 Axis Title 100 10000 VGS = 10 V thru 4 V 40 100 VGS = 3 V 20 1000 60 40 TC = 25 C 100 20 0 1 1.5 2 10 0 1 2 Output Characteristics Transfer Characteristics Axis Title 0.004 100 VGS = 10 V 40 60 1000 900 Coss 600 100 300 10 20 Ciss 80 1st line 2nd line 1000 2nd line C - Capacitance (pF) VGS = 4.5 V 0.006 1st line 2nd line 2nd line RDS(on) - On-Resistance () 10000 1200 0.008 0.002 Crss 0 100 10 0 5 10 15 20 25 ID - Drain Current (A) 2nd line VDS - Drain-to-Source Voltage (V) 2nd line On-Resistance vs. Drain Current Capacitance Axis Title 10000 1000 1st line 2nd line VDS = 7.5 V VDS = 24 V 100 2 0 10 3 6 9 12 15 2nd line RDS(on) - On-Resistance (Normalized) VDS = 15 V 6 10000 1.8 ID = 7 A 4 30 Axis Title 10 8 5 1500 10000 0 2nd line VGS - Gate-to-Source Voltage (V) 4 VGS - Gate-to-Source Voltage (V) 2nd line Axis Title 0 3 VDS - Drain-to-Source Voltage (V) 2nd line 0.010 0 TC = -55 C ID = 7 A 1.6 VGS = 10 V 1000 1.4 1.2 VGS = 4.5 V 1.0 100 0.8 0.6 10 -50 -25 0 25 50 75 100 125 150 Qg - Total Gate Charge (nC) 2nd line TJ - Junction Temperature (C) 2nd line Gate Charge On-Resistance vs. Junction Temperature S18-0479-Rev. A, 30-Apr-2018 1st line 2nd line 0.5 TC = 125 C 0 10 0 1st line 2nd line 1000 60 2nd line ID - Drain Current (A) 80 1st line 2nd line 2nd line ID - Drain Current (A) 80 10000 Document Number: 76288 4 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiZF300DT www.vishay.com Vishay Siliconix CHANNEL-1 TYPICAL CHARACTERISTICS (25 C, unless otherwise noted) Axis Title Axis Title 100 0.015 10000 1000 TJ = 25 C 1 100 0.1 0.012 1000 0.009 0.4 0.6 0.8 1.0 TJ = 125 C 0.006 100 0.003 TJ = 25 C 0 10 0.2 10 0 1.2 2 4 6 8 10 VSD - Source-to-Drain Voltage (V) 2nd line VGS - Gate-to-Source Voltage (V) 2nd line Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage Axis Title Axis Title 10000 2.0 50 1.8 10000 40 1000 2nd line Power (W) 1000 ID = 250 A 1.4 1.2 30 1st line 2nd line 1st line 2nd line 1.6 VGS(th) (V) 1st line 2nd line 2nd line RDS(on) - On-Resistance () 10 1st line 2nd line 2nd line IS - Source Current (A) TJ = 150 C 0 10000 ID = 7 A 20 100 100 10 1.0 0.8 10 -50 -25 0 25 50 75 0 0.001 100 125 150 0.01 TJ - Temperature (C) 2nd line 0.1 1 10 100 10 1000 Time (s) 2nd line Threshold Voltage Single Pulse Power, Junction-to-Ambient Axis Title 1000 ID(ON) Limited Limited by RDS(on) (1) IDM Limited 10000 2nd line ID - Drain Current (A) 100 100 s 10 1000 1 ms 1 10 ms 100 ms 100 1s 10 s DC 0.1 TA = 25 C Single pulse 0.01 0.01 (1) BVdss Limited 10 0.1 1 10 100 VDS - Drain-to-Source Voltage (V) VGS > minimum VGS at which RDS(on) is specified Safe Operating Area, Junction-to-Ambient S18-0479-Rev. A, 30-Apr-2018 Document Number: 76288 5 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiZF300DT www.vishay.com Vishay Siliconix CHANNEL-1 TYPICAL CHARACTERISTICS (25 C, unless otherwise noted) Axis Title Axis Title 100 50 10000 40 80 1000 30 1st line 2nd line 40 2nd line Power (W) 1000 60 1st line 2nd line 2nd line ID - Drain Current (A) 10000 20 100 20 100 10 0 10 0 25 50 75 100 125 150 0 10 0 25 50 75 100 125 TC - Case Temperature (C) 2nd line TC - Case Temperature (C) 2nd line Current Derating a Power, Junction-to-Case 150 Note a. The power dissipation PD is based on TJ max. = 150 C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit S18-0479-Rev. A, 30-Apr-2018 Document Number: 76288 6 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiZF300DT www.vishay.com Vishay Siliconix CHANNEL-1 TYPICAL CHARACTERISTICS (25 C, unless otherwise noted) Axis Title 1 10000 0.2 1000 Notes: 0.1 PDM 0.1 0.05 t1 t2 t 1. Duty cycle, D = 1 t2 2. Per unit base = RthJA = 66 C/W 0.02 3. TJM - TA = PDMZthJA Single pulse 0.01 0.0001 1st line 2nd line Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.001 100 (t) 4. Surface mounted 0.01 0.1 1 10 100 10 1000 Square Wave Pulse Duration (s) 2nd line Normalized Thermal Transient Impedance, Junction-to-Ambient Axis Title 10000 Duty Cycle = 0.5 1000 0.2 1st line 2nd line Normalized Effective Transient Thermal Impedance 1 0.1 0.05 0.02, Single pulse 0.1 0.0001 100 10 0.001 0.01 0.1 Square Wave Pulse Duration (s) 2nd line Normalized Thermal Transient Impedance, Junction-to-Case S18-0479-Rev. A, 30-Apr-2018 Document Number: 76288 7 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiZF300DT www.vishay.com Vishay Siliconix CHANNEL-2 TYPICAL CHARACTERISTICS (25 C, unless otherwise noted) Axis Title Axis Title 100 100 10000 10000 VGS = 10 V thru 4 V 40 100 20 1000 60 1st line 2nd line 1000 VGS = 3 V 60 2nd line ID - Drain Current (A) 80 1st line 2nd line 40 TC = 25 C 100 20 TC = 125 C 0 0 10 0 0.5 1 1.5 2 10 0 0.5 1 1.5 Output Characteristics Transfer Characteristics Axis Title 10000 1000 0.0015 VGS = 10 V 100 Ciss 2000 Coss 1000 0.0005 0 10 20 40 60 80 Crss 10 0 5 10 15 20 25 ID - Drain Current (A) 2nd line VDS - Drain-to-Source Voltage (V) 2nd line On-Resistance vs. Drain Current Capacitance 2.0 8 VDS = 15 V 1000 4 1st line 2nd line VDS = 7.5 V VDS = 24 V 100 2 0 10 10 20 30 40 50 2nd line RDS(on) - On-Resistance (Normalized) 10000 ID = 10 A 30 Axis Title Axis Title 2nd line VGS - Gate-to-Source Voltage (V) 100 0 100 10 0 1000 3000 1st line 2nd line 0.002 2nd line C - Capacitance (pF) 4000 1st line 2nd line 2nd line RDS(on) - On-Resistance () VGS = 4.5 V 0.001 3 5000 10000 6 2.5 VGS - Gate-to-Source Voltage (V) 2nd line Axis Title 0 2 VDS - Drain-to-Source Voltage (V) 2nd line 0.003 0.0025 TC = -55 C 10000 ID = 7 A 1.8 VGS = 10 V 1.6 1000 1.4 1.2 VGS = 4.5 V 1.0 100 0.8 0.6 0.4 10 -50 -25 0 25 50 75 100 125 150 Qg - Total Gate Charge (nC) 2nd line TJ - Junction Temperature (C) 2nd line Gate Charge On-Resistance vs. Junction Temperature S18-0479-Rev. A, 30-Apr-2018 1st line 2nd line 2nd line ID - Drain Current (A) 80 Document Number: 76288 8 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiZF300DT www.vishay.com Vishay Siliconix CHANNEL-2 TYPICAL CHARACTERISTICS (25 C, unless otherwise noted) Axis Title Axis Title 100 0.005 10000 1000 1 100 0.1 0.004 0.002 100 0.4 0.6 0.8 TJ = 25 C 0.001 0 10 0.2 1000 TJ = 125 C 0.003 1st line 2nd line 10 2nd line RDS(on) - On-Resistance () TJ = 25 C 1st line 2nd line 2nd line IS - Source Current (A) TJ = 150 C 0 10000 ID = 10 A 10 0 1.0 2 4 6 8 10 VSD - Source-to-Drain Voltage (V) 2nd line VGS - Gate-to-Source Voltage (V) 2nd line Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage Axis Title Axis Title 50 10000 1.E-01 10000 1.E-02 40 1000 1.E-05 30 1st line 2nd line VDS = 30 V 20 100 VDS = 10 V 1.E-06 1000 2nd line Power (W) 1.E-04 1st line 2nd line Ir (V) 1.E-03 100 10 1.E-07 1.E-08 10 -50 -25 0 25 50 75 0 0.001 100 125 150 0.01 TJ - Temperature (C) 2nd line 0.1 1 10 100 10 1000 Time (s) 2nd line Reverse Current (Schottky) Single Pulse Power, Junction-to-Ambient Axis Title 1000 ID(ON) Limited Limited by RDS(on) (1) IDM Limited 10000 2nd line ID - Drain Current (A) 100 100 s 1000 10 1 ms 10 ms 100 ms 100 1s 10 s DC 1 0.1 TA = 25 C Single pulse 0.01 0.01 (1) BVdss Limited 10 0.1 1 10 100 VDS - Drain-to-Source Voltage (V) VGS > minimum VGS at which RDS(on) is specified Safe Operating Area, Junction-to-Ambient S18-0479-Rev. A, 30-Apr-2018 Document Number: 76288 9 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiZF300DT www.vishay.com Vishay Siliconix CHANNEL-2 TYPICAL CHARACTERISTICS (25 C, unless otherwise noted) Axis Title Axis Title 10000 80 120 1000 60 1st line 2nd line 80 2nd line Power (W) 1000 1st line 2nd line 2nd line ID - Drain Current (A) 100 10000 160 40 100 40 100 20 0 10 0 25 50 75 100 125 150 0 10 0 25 50 75 100 125 TC - Case Temperature (C) 2nd line TC - Case Temperature (C) 2nd line Current Derating a Power, Junction-to-Case 150 Note a. The power dissipation PD is based on TJ max. = 150 C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit S18-0479-Rev. A, 30-Apr-2018 Document Number: 76288 10 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiZF300DT www.vishay.com Vishay Siliconix CHANNEL-2 TYPICAL CHARACTERISTICS (25 C, unless otherwise noted) Axis Title 1 10000 0.2 Notes: 0.1 1000 1st line 2nd line Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 PDM 0.1 0.05 t1 t2 t 1. Duty cycle, D = 1 t2 2. Per unit base = RthJA = 67 C/W 0.02 3. TJM - TA = PDMZthJA Single pulse 0.01 0.0001 0.001 100 (t) 4. Surface mounted 0.01 0.1 1 10 100 10 1000 Square Wave Pulse Duration (s) 2nd line Normalized Thermal Transient Impedance, Junction-to-Ambient Axis Title 1 10000 0.2 1000 0.1 1st line 2nd line Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.05 100 0.02, Single pulse 0.1 0.0001 10 0.001 0.01 0.1 Square Wave Pulse Duration (s) 2nd line Normalized Thermal Transient Impedance, Junction-to-Case Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package / tape drawings, part marking, and reliability data, see www.vishay.com/ppg?76288. S18-0479-Rev. A, 30-Apr-2018 Document Number: 76288 11 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Package Information www.vishay.com Vishay Siliconix PowerPAIR(R) 3 x 3F Case Outline C A A B A1 L1 D3 K2 D2 D4 H3 H3 D K1 2 E1 K4 Pin 1 dot 0.10 C 0.05 C 2x // 0.10 C 0.10 C H2 1 2x DIM. E2 E3 3 e E e x 3 = 2.4 b K3 c E4 4 L K1 D1 H1 MILLIMETERS INCHES MIN. NOM. MAX. MIN. NOM. A 0.70 0.75 0.80 0.028 0.030 0.032 A1 0.00 0.02 0.05 0.000 0.001 0.002 b 0.25 0.30 0.35 0.010 0.012 0.014 c 0.20 ref. MAX. 0.008 ref. D 3.20 3.30 3.40 0.126 0.130 0.134 D1 2.15 2.20 2.25 0.085 0.087 0.089 D2 2.45 2.50 2.55 0.096 0.098 0.100 D3 0.65 0.70 0.75 0.026 0.028 0.030 D4 1.75 1.80 1.85 0.069 0.071 0.073 E 3.20 3.30 3.40 0.126 0.130 0.134 E1 0.69 0.74 0.79 0.027 0.029 0.031 E2 1.73 1.78 1.93 0.068 0.070 0.072 E3 0.92 0.97 1.02 0.036 0.038 0.040 E4 0.76 0.81 0.86 0.030 0.032 0.034 e 0.80 BSC 0.031 BSC K1 0.40 ref. 0.016 ref. K2 0.50 ref. 0.020 ref. K3 0.35 ref. 0.014 ref. K4 0.25 ref. 0.010 ref. H1 0.30 ref. 0.012 ref. H2 0.25 ref. 0.010 ref. H3 0.15 ref. 0.006 ref. L 0.35 0.40 0.45 0.014 0.016 0.018 L1 0.80 0.85 0.90 0.031 0.033 0.035 T18-0135-Rev. A, 02-Apr-18 DWG: 6065 Notes (1) Use millimeters as the primary measurement (2) Dimensioning and tolerances conform to ASME Y14.5M - 1994 (3) N is the number of terminals; Nd is the numer of terminals in X-direction; Ne is the number of terminals in Y-direction (4) Dimension b applies to plated terminal and is measured between 0.20 mm and 0.25 mm from terminal tip (5) The pin # 1 identifier must be existed on the top surface of the package by using identation mark or other feature of package body (6) Exact shape and size of this features is optional (7) Package warpage max. 0.08 mm (8) Applied only for terminals Revision: 02-Apr-18 Document Number: 76603 1 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, "Vishay"), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special, consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular purpose, non-infringement and merchantability. Statements regarding the suitability of products for certain types of applications are based on Vishay's knowledge of typical requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements about the suitability of products for a particular application. It is the customer's responsibility to validate that a particular product with the properties described in the product specification is suitable for use in a particular application. Parameters provided in datasheets and / or specifications may vary in different applications and performance may vary over time. All operating parameters, including typical parameters, must be validated for each customer application by the customer's technical experts. Product specifications do not expand or otherwise modify Vishay's terms and conditions of purchase, including but not limited to the warranty expressed therein. Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining applications or for any other application in which the failure of the Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners. (c) 2017 VISHAY INTERTECHNOLOGY, INC. ALL RIGHTS RESERVED Revision: 08-Feb-17 1 Document Number: 91000