SiZF300DT
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Dual N-Channel 30 V (D-S) MOSFET with Schottky Diode
FEATURES
• TrenchFET® Gen IV power MOSFET
•SkyFET
® low side MOSFET with integrated Schottky
• 100 % Rg and UIS tested
• Internally connected half-bridge configuration in
3.3 mm-by-3.3 mm footprint
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
APPLICATIONS
• CPU core power
• Computer / server peripherals
•POL
• Synchronous buck converter
• Telecom DC/DC
Notes
a. TC = 25 °C
b. Surface mounted on 1" x 1" FR4 board
c. t = 10 s
d. See solder profile (www.vishay.com/doc?73257). The PowerPAIR 3 x 3F is a leadless package. The end of the lead terminal is exposed
copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed
and is not required to ensure adequate bottom side solder interconnection
e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components
f. Maximum under steady state conditions is 66 °C/W for channel-1 and 67 °C/W for channel-2
PRODUCT SUMMARY
CHANNEL-1 CHANNEL-2
VDS (V) 30 30
RDS(on) max. () at VGS = 10 V 0.00450 0.00184
RDS(on) max. () at VGS = 4.5 V 0.00700 0.00257
Qg typ. (nC) 6.9 19.4
ID (A) a75 141
Configuration Dual
PowerPAIR
®
3 x 3F
Top View Bottom View
1
3.3 mm
3.3 mm
4
G2
1
G1
2
S1/D2
3
S1/D2
D
1
S
2
VIN/D1
GND/S2
N-Channel 2
MOSFET
N-Channel 1
MOSFET
GHS/G1
VSW/S1-D2
G1Return/S1
GLS/G2Schottky
Diode
ORDERING INFORMATION
Package PowerPAIR 3 x 3F
Lead (Pb)-free and halogen-free SiZF300DT-T1-GE3
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)
PARAMETER SYMBOL CHANNEL-1 CHANNEL-2 UNIT
Drain-source voltage VDS 30 30 V
Gate-source voltage VGS +20, -16 +16, -12
Continuous drain current (TJ = 150 °C)
TC = 25 °C
ID
75 141
A
TC = 70 °C 60 113
TA = 25 °C 23 b, c 34 b, c
TA = 70 °C 18 b, c 27 b, c
Pulsed drain current (t = 100 μs) IDM 150 200
Continuous source-drain diode current TC = 25 °C IS
44 105
TA = 25 °C 3.4 b, c 6.2 b, c
Single pulse avalanche current L = 0.1 mH IAS 14 16
Single pulse avalanche energy EAS 9.8 12.8 mJ
Maximum power dissipation
TC = 25 °C
PD
48 74
W
TC = 70 °C 31 47
TA = 25 °C 3.8 b, c 4.3 b, c
TA = 70 °C 2.4 b, c 2.8 b, c
Operating junction and storage temperature range TJ, Tstg -55 to +150 °C
Soldering recommendations (peak temperature) d, e 260
THERMAL RESISTANCE RATINGS
PARAMETER SYMBOL
CHANNEL-1 CHANNEL-2 UNIT
TYP. MAX. TYP. MAX.
Maximum junction-to-ambient b, f t 10 s RthJA 26 33 23 29 °C/W
Maximum junction-to-case (source) Steady state RthJC 2 2.6 1.3 1.7
SiZF300DT
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SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT
Static
Drain-source breakdown voltage VDS VGS = 0 V, ID = 250 μA Ch-1 30 - -
V
Ch-2 30 - -
Gate-source threshold voltage VGS(th) VDS = VGS, ID = 250 μA Ch-1 1.1 - 2.2
Ch-2 1.0 - 2.2
Gate-source leakage IGSS
VDS = 0 V, VGS = +20 V, -16 V Ch-1 - - ± 100 nA
VDS = 0 V, VGS = +16 V, -12 V Ch-2 - - ± 100
Zero Gate voltage drain current IDSS
VDS = 30 V, VGS = 0 V Ch-1 - - 1
μA
Ch-2 - 30 350
VDS = 30 V, VGS = 0 V, TJ = 55 °C Ch-1 - - 5
Ch-2 - 150 3000
On-state drain current bID(on) V
DS 5 V, VGS = 10 V Ch-1 10 - - A
Ch-2 10 - -
Drain-source on-state resistance bRDS(on)
VGS = 10 V, ID = 10 A Ch-1 - 0.00330 0.00450
VGS = 10 V, ID = 10 A Ch-2 - 0.00160 0.00184
VGS = 4.5 V, ID = 7 A Ch-1 - 0.00490 0.00700
VGS = 4.5 V, ID = 7 A Ch-2 - 0.00210 0.00257
Forward transconductance bgfs
VDS = 10 V, ID = 20 A Ch-1 - 60 - S
VDS = 10 V, ID = 20 A Ch-2 90 -
Dynamic a
Input capacitance Ciss
Channel-1
VDS = 15 V, VGS = 0 V, f = 1 MHz
Channel-2
VDS = 15 V, VGS = 0 V, f = 1 MHz
Ch-1 - 1100 -
pF
Ch-2 - 3150 -
Output capacitance Coss Ch-1 - 530 -
Ch-2 - 1550 -
Reverse transfer capacitance Crss Ch-1 - 40 -
Ch-2 - 170 -
Crss/Ciss ratio Ch-1 - 0.036 0.072
Ch-2 0.054 0.108
Total gate charge Qg
VDS = 15 V, VGS = 10 V, ID = 10 A Ch-1 - 14.4 22
nC
Ch-2 - 41 62
Channel-1
VDS = 15 V, VGS = 4.5 V, ID = 10 A
Channel-2
VDS = 15 V, VGS = 4.5 V, ID = 10 A
Ch-1 6.9 10.5
Ch-2 - 19.4 29
Gate-source charge Qgs Ch-1 - 3.1 -
Ch-2 - 7.1 -
Gate-drain charge Qgd
Ch-1 - 1.5 -
Ch-2 - 3.8 -
Output charge Qoss VDS = 15 V, VGS = 0 V Ch-1 - 13 -
Ch-2 - 40 -
Gate resistance Rgf = 1 MHz Ch-1 0.14 0.7 1.4
Ch-2 0.12 0.62 1.2
Turn-on delay time td(on) Channel-1
VDD = 15 V, RL = 3
ID 5 A, VGEN = 4.5 V, Rg = 1
Channel-2
VDD = 15 V, RL = 3
ID 5 A, VGEN = 4.5 V, Rg = 1
Ch-1 - 17 35
ns
Ch-2 - 25 50
Rise time tr Ch-1 - 40 80
Ch-2 - 53 110
Turn-off delay time td(off) Ch-1 - 23 45
Ch-2 - 30 60
Fall time tf
Ch-1 - 7 15
Ch-2 - 12 25
Turn-on delay time td(on) Channel-1
VDD = 15 V, RL = 3
ID 5 A, VGEN = 10 V, Rg = 1
Channel-2
VDD = 15 V, RL = 3
ID 5 A, VGEN = 10 V, Rg = 1
Ch-1 - 11 20
Ch-2 - 13 25
Rise time tr Ch-1 - 5 10
Ch-2 - 20 40
Turn-off delay time td(off) Ch-1 - 23 45
Ch-2 - 32 65
Fall time tf
Ch-1 - 5 10
Ch-2 - 6 15
SiZF300DT
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S18-0479-Rev. A, 30-Apr-2018 3Document Number: 76288
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Notes
a. Guaranteed by design, not subject to production testing
b. Pulse test; pulse width 300 μs, duty cycle 2 %
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
Drain-Source Body Diode Characteristics
Continuous source-drain diode current ISTC = 25 °C Ch-1 - - 44
A
Ch-2 - - 105
Pulse diode forward current aISM
Ch-1 - - 150
Ch-2 - - 200
Body diode voltage VSD
IS = 5 A, VGS = 0 V Ch-1 - 0.75 1.1 V
IS = 5 A, VGS = 0 V Ch-2 - 0.44 0.7
Body diode reverse recovery time trr
Channel-1
IF = 10 A, di/dt = 100 A/μs, TJ = 25 °C
Channel-2
IF = 10 A, di/dt = 100 A/μs, TJ = 25 °C
Ch-1 - 36 75 ns
Ch-2 - 46 90
Body diode reverse recovery charge Qrr
Ch-1 - 26 55 nC
Ch-2 - 40 80
Reverse recovery fall time ta
Ch-1 - 16 -
ns
Ch-2 - 18 -
Reverse recovery rise time tb
Ch-1 - 20 -
Ch-2 - 28 -
SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT
SiZF300DT
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CHANNEL-1 TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
Output Characteristics
On-Resistance vs. Drain Current
Gate Charge
Transfer Characteristics
Capacitance
On-Resistance vs. Junction Temperature
10
100
1000
10000
0
20
40
60
80
100
00.511.52
Axis Title
1st line
2nd line
2nd line
ID- Drain Current (A)
VDS - Drain-to-Source Voltage (V)
2nd line
VGS = 10 V thru 4 V
VGS = 3 V
10
100
1000
10000
0
0.002
0.004
0.006
0.008
0.010
0 20406080100
Axis Title
1st line
2nd line
2nd line
RDS(on) - On-Resistance (Ω)
ID- Drain Current (A)
2nd line
V
GS
= 10 V
V
GS
= 4.5 V
10
100
1000
10000
0
2
4
6
8
10
03691215
Axis Title
1st line
2nd line
2nd line
VGS - Gate-to-Source Voltage (V)
Qg- Total Gate Charge (nC)
2nd line
VDS = 15 V
VDS = 24 V
VDS = 7.5 V
ID= 7 A
10
100
1000
10000
0
20
40
60
80
100
012345
Axis Title
1st line
2nd line
2nd line
ID- Drain Current (A)
VGS - Gate-to-Source Voltage (V)
2nd line
TC= 25 °C
TC= -55 °C
TC= 125 °C
10
100
1000
10000
0
300
600
900
1200
1500
0 5 10 15 20 25 30
Axis Title
1st line
2nd line
2nd line
C - Capacitance (pF)
VDS - Drain-to-Source Voltage (V)
2nd line
Crss
Coss
Ciss
10
100
1000
10000
0.6
0.8
1.0
1.2
1.4
1.6
1.8
-50-25 0 255075100125150
Axis Title
1st line
2nd line
2nd line
RDS(on) - On-Resistance (Normalized)
TJ- Junction Temperature (°C)
2nd line
ID= 7 A
VGS = 10 V
VGS = 4.5 V
SiZF300DT
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CHANNEL-1 TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
Source-Drain Diode Forward Voltage
Threshold Voltage
On-Resistance vs. Gate-to-Source Voltage
Single Pulse Power, Junction-to-Ambient
Safe Operating Area, Junction-to-Ambient
10
100
1000
10000
0.1
1
10
100
0 0.2 0.4 0.6 0.8 1.0 1.2
Axis Title
1st line
2nd line
2nd line
IS- Source Current (A)
VSD - Source-to-Drain Voltage (V)
2nd line
TJ= 150 °C
TJ= 25 °C
10
100
1000
10000
0.8
1.0
1.2
1.4
1.6
1.8
2.0
-50 -25 0 25 50 75 100 125 150
Axis Title
1st line
2nd line
VGS(th) (V)
TJ- Temperature (°C)
2nd line
ID= 250 µA
10
100
1000
10000
0
0.003
0.006
0.009
0.012
0.015
0246810
Axis Title
1st line
2nd line
2nd line
RDS(on) - On-Resistance (Ω)
VGS - Gate-to-Source Voltage (V)
2nd line
TJ= 25 °C
TJ= 125 °C
ID= 7 A
10
100
1000
10000
0
10
20
30
40
50
0.001 0.01 0.1 1 10 100 1000
Axis Title
1st line
2nd line
2nd line
Power (W)
Time (s)
2nd line
10
100
1000
10000
0.01
0.1
1
10
100
1000
0.01 0.1 1 10 100
Axis Title
2nd line
ID- Drain Current (A)
VDS - Drain-to-Source Voltage (V)
(1) VGS > minimum VGS at which RDS(on) is specified
Limited by RDS(on) (1)
TA= 25 °C
Single pulse
100 ms
10 ms
1 ms
100 µs
1s
10 s
DC
IDM Limited
ID(ON) Limited
BVdss Limited
SiZF300DT
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CHANNEL-1 TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
Current Derating aPower, Junction-to-Case
Note
a. The power dissipation PD is based on TJ max. = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the
package limit
10
100
1000
10000
0
20
40
60
80
100
0 25 50 75 100 125 150
Axis Title
1st line
2nd line
2nd line
ID- Drain Current (A)
TC- Case Temperature (°C)
2nd line
10
100
1000
10000
0
10
20
30
40
50
0 25 50 75 100 125 150
Axis Title
1st line
2nd line
2nd line
Power (W)
TC- Case Temperature (°C)
2nd line
SiZF300DT
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CHANNEL-1 TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
Normalized Thermal Transient Impedance, Junction-to-Ambient
Normalized Thermal Transient Impedance, Junction-to-Case
10
100
1000
10000
0.01
0.1
1
0.0001 0.001 0.01 0.1 1 10 100 1000
Axis Title
1st line
2nd line
Normalized Effective Transient
Thermal Impedance
Square Wave Pulse Duration (s)
2nd line
0.1
0.05
0.02
Single pulse
Duty Cycle = 0.5
0.2
PDM
t1t2
1. Duty cycle, D =
2. Per unit base = RthJA = 66 °C/W
3. TJM -T
A= PDMZthJA (t)
4. Surface mounted
t1
t2
Notes:
10
100
1000
10000
0.1
1
0.0001 0.001 0.01 0.1
Axis Title
1st line
2nd line
Normalized Effective Transient
Thermal Impedance
Square Wave Pulse Duration (s)
2nd line
0.1 0.05
0.02, Single pulse
Duty Cycle = 0.5
0.2
SiZF300DT
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ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
CHANNEL-2 TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
Output Characteristics
On-Resistance vs. Drain Current
Gate Charge
Transfer Characteristics
Capacitance
On-Resistance vs. Junction Temperature
10
100
1000
10000
0
20
40
60
80
100
00.511.52
Axis Title
1st line
2nd line
2nd line
ID- Drain Current (A)
VDS - Drain-to-Source Voltage (V)
2nd line
VGS = 10 V thru 4 V
VGS = 3 V
10
100
1000
10000
0
0.0005
0.001
0.0015
0.002
0.0025
0.003
0 20406080100
Axis Title
1st line
2nd line
2nd line
RDS(on) - On-Resistance (Ω)
ID- Drain Current (A)
2nd line
VGS = 10 V
VGS = 4.5 V
10
100
1000
10000
0
2
4
6
8
10
0 1020304050
Axis Title
1st line
2nd line
2nd line
VGS - Gate-to-Source Voltage (V)
Qg- Total Gate Charge (nC)
2nd line
VDS = 15 V
VDS = 24 V
VDS = 7.5 V
ID= 10 A
10
100
1000
10000
0
20
40
60
80
100
0 0.5 1 1.5 2 2.5 3
Axis Title
1st line
2nd line
2nd line
ID- Drain Current (A)
VGS - Gate-to-Source Voltage (V)
2nd line
T
C
= 25 °C
T
C
=-55 °C
T
C
= 125 °C
10
100
1000
10000
0
1000
2000
3000
4000
5000
0 5 10 15 20 25 30
Axis Title
1st line
2nd line
2nd line
C - Capacitance (pF)
VDS - Drain-to-Source Voltage (V)
2nd line
Crss
Coss
Ciss
10
100
1000
10000
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
-50-25 0 255075100125150
Axis Title
1st line
2nd line
2nd line
RDS(on) - On-Resistance (Normalized)
TJ- Junction Temperature (°C)
2nd line
ID= 7 A
VGS = 10 V
VGS = 4.5 V
SiZF300DT
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ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
CHANNEL-2 TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
Source-Drain Diode Forward Voltage
Reverse Current (Schottky)
On-Resistance vs. Gate-to-Source Voltage
Single Pulse Power, Junction-to-Ambient
Safe Operating Area, Junction-to-Ambient
10
100
1000
10000
0.1
1
10
100
0 0.2 0.4 0.6 0.8 1.0
Axis Title
1st line
2nd line
2nd line
IS- Source Current (A)
VSD - Source-to-Drain Voltage (V)
2nd line
TJ= 150 °C
TJ= 25 °C
10
100
1000
10000
1.E-08
1.E-07
1.E-06
1.E-05
1.E-04
1.E-03
1.E-02
1.E-01
-50 -25 0 25 50 75 100 125 150
Axis Title
1st line
2nd line
Ir(V)
TJ- Temperature (°C)
2nd line
V
DS
= 30 V
V
DS
= 10 V
10
100
1000
10000
0
0.001
0.002
0.003
0.004
0.005
0246810
Axis Title
1st line
2nd line
2nd line
RDS(on) - On-Resistance (Ω)
VGS - Gate-to-Source Voltage (V)
2nd line
TJ= 25 °C
TJ= 125 °C
ID= 10 A
10
100
1000
10000
0
10
20
30
40
50
0.001 0.01 0.1 1 10 100 1000
Axis Title
1st line
2nd line
2nd line
Power (W)
Time (s)
2nd line
10
100
1000
10000
0.01
0.1
1
10
100
1000
0.01 0.1 1 10 100
Axis Title
2nd line
ID- Drain Current (A)
VDS - Drain-to-Source Voltage (V)
(1) VGS > minimum VGS at which RDS(on) is specified
Limited by RDS(on) (1)
TA= 25 °C
Single pulse
100 ms
10 ms
1 ms
100 µs
1s
10 s
DC
IDM Limited
ID(ON) Limited
BVdss Limited
SiZF300DT
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CHANNEL-2 TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
Current Derating aPower, Junction-to-Case
Note
a. The power dissipation PD is based on TJ max. = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the
package limit
10
100
1000
10000
0
40
80
120
160
0 25 50 75 100 125 150
Axis Title
1st line
2nd line
2nd line
ID- Drain Current (A)
TC- Case Temperature (°C)
2nd line
10
100
1000
10000
0
20
40
60
80
100
0 255075100125150
Axis Title
1st line
2nd line
2nd line
Power (W)
TC- Case Temperature (°C)
2nd line
SiZF300DT
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CHANNEL-2 TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
Normalized Thermal Transient Impedance, Junction-to-Ambient
Normalized Thermal Transient Impedance, Junction-to-Case
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package / tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?76288.
10
100
1000
10000
0.01
0.1
1
0.0001 0.001 0.01 0.1 1 10 100 1000
Axis Title
1st line
2nd line
Normalized Effective Transient
Thermal Impedance
Square Wave Pulse Duration (s)
2nd line
0.1
0.05
0.02
Single pulse
Duty Cycle = 0.5
0.2
P
DM
t
1
t
2
1. Duty cycle, D =
2. Per unit base = R
thJA
= 67 °C/W
3. T
JM
-T
A
= P
DM
Z
thJA (t)
4. Surface mounted
t
1
t
2
Notes:
10
100
1000
10000
0.1
1
0.0001 0.001 0.01 0.1
Axis Title
1st line
2nd line
Normalized Effective Transient
Thermal Impedance
Square Wave Pulse Duration (s)
2nd line
0.1
0.05
0.02, Single pulse
Duty Cycle = 0.5
0.2
Package Information
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Revision: 02-Apr-18 1Document Number: 76603
For technical questions, contact: pmostechsupport@vishay.com
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ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
PowerPAIR® 3 x 3F Case Outline
Notes
(1) Use millimeters as the primary measurement
(2) Dimensioning and tolerances conform to ASME Y14.5M - 1994
(3) N is the number of terminals; Nd is the numer of terminals in X-direction; Ne is the number of terminals in Y-direction
(4) Dimension b applies to plated terminal and is measured between 0.20 mm and 0.25 mm from terminal tip
(5) The pin # 1 identifier must be existed on the top surface of the package by using identation mark or other feature of package body
(6) Exact shape and size of this features is optional
(7) Package warpage max. 0.08 mm
(8) Applied only for terminals
DIM. MILLIMETERS INCHES
MIN. NOM. MAX. MIN. NOM. MAX.
A 0.70 0.75 0.80 0.028 0.030 0.032
A1 0.00 0.02 0.05 0.000 0.001 0.002
b 0.25 0.30 0.35 0.010 0.012 0.014
c 0.20 ref. 0.008 ref.
D 3.20 3.30 3.40 0.126 0.130 0.134
D1 2.15 2.20 2.25 0.085 0.087 0.089
D2 2.45 2.50 2.55 0.096 0.098 0.100
D3 0.65 0.70 0.75 0.026 0.028 0.030
D4 1.75 1.80 1.85 0.069 0.071 0.073
E 3.20 3.30 3.40 0.126 0.130 0.134
E1 0.69 0.74 0.79 0.027 0.029 0.031
E2 1.73 1.78 1.93 0.068 0.070 0.072
E3 0.92 0.97 1.02 0.036 0.038 0.040
E4 0.76 0.81 0.86 0.030 0.032 0.034
e 0.80 BSC 0.031 BSC
K1 0.40 ref. 0.016 ref.
K2 0.50 ref. 0.020 ref.
K3 0.35 ref. 0.014 ref.
K4 0.25 ref. 0.010 ref.
H1 0.30 ref. 0.012 ref.
H2 0.25 ref. 0.010 ref.
H3 0.15 ref. 0.006 ref.
L 0.35 0.40 0.45 0.014 0.016 0.018
L1 0.80 0.85 0.90 0.031 0.033 0.035
T18-0135-Rev. A, 02-Apr-18
DWG: 6065
D
E
e x 3 = 2.4
e
L1
b
K2
D3 D4
E4
E3
H1
LK1
E2
K1
D2
E1
H2
D1
H3
H3
K3
K4
Pin 1 dot
A
A1
C
c
// 0.10 C
0.05 C
A
B
0.10 C
2 x
0.10 C
2 x 1
4
3
2
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