DS 9 DSA 9 VRRM = 800-1800 V IF(RMS) = 18 A IF(AV)M = 11 A Rectifier Diode Avalanche Diode VRSM V 900 1300 1700 1900 V(BR)miny VRRM V V 1300 1750 1950 800 1200 1600 1800 Standard Avalanche Types Types DS 9-08F DS 9-12F A C DO-203 AA C DSA 9-12F DSA 9-16F DSA 9-18F A M5 Only for Avalanche Diodes A = Anode Symbol Test Conditions Maximum Ratings IF(RMS) IF(AVM) TVJ = TVJM Tcase = 150C; 180 sine 18 11 A A PRSM DSA types, TVJ = TVJM, tp = 10 ms 4.5 kW IFSM TVJ = 45C; VR = 0 t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine 250 265 A A TVJ = TVJM VR = 0 t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine 200 220 A A TVJ = 45C VR = 0 t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine 310 295 A2s A2s TVJ = TVJM VR = 0 t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine 200 190 A2s A2s -40...+180 180 -40...+180 C C C C = Cathode Features International standard package, JEDEC DO-203 AA Planar glassivated chips I2t TVJ TVJM Tstg Md Mounting torque 2.2-2.8 19-25 5 Weight Nm lb.in. g Symbol Test Conditions IR TVJ = TVJM; VR = VRRM 3 VF IF 1.4 V VT0 rT For power-loss calculations only TVJ = TVJM 0.85 15 V mW RthJC RthJH DC current 180 sine DC current 2.0 2.17 3.0 K/W K/W K/W dS dA a Creepage distance on surface Strike distance through air Max. allowable acceleration 2.0 2.0 100 mm mm m/s2 = 36 A; TVJ = 25C Applications Supplies for DC power equipment DC supply for PWM inverter Field supply for DC motors Battery DC power supplies Advantages Space and weight savings Simple mounting Improved temperature and power cycling Reduced protection circuits Dimensions in mm (1 mm = 0.0394") Characteristic Values mA Data according to IEC 60747 IXYS reserves the right to change limits, test conditions and dimensions (c) 2000 IXYS All rights reserved 1-2 DS 9 DSA 9 50 300 1000 A A 250 800 A2s typ. 40 lim. 50Hz, 80%VRRM IFSM IF 200 TVJ= 180C TVJ= 25C 600 I2t TVJ = 45C TVJ = 180C 30 VR = 0 V 400 150 20 TVJ=45C 100 10 200 TVJ=180C 50 0 V 1.6 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 VF 0 10-3 Fig. 1 Forward characteristics 100 10-2 10-1 100 s t 101 1 2 3 4 Fig. 3 I2t versus time (1-10 ms) Fig. 2 Surge overload current IFSM: crest value, t: duration 25 25 W A DC d = 180 sin d = 120 d= 60 d= 30 RthJA : 20 20 8.3 K/W PF IF(AV)M 13 K/W (CU80x80) 18 K/W 15 5 6 7 ms 8 910 t 15 10 10 DC 180 sin 120 60 30 5 5 0 0 0 5 10 15 A 20 00 50 150 C 200 100 IF(AV)M Fig. 4 Power dissipation versus forward current and ambient temperature 50 100 150 RthJH for various conduction angles d: 30 60 K/W 4 120 180 ZthJH 200 C 250 Tcase Fig. 5 Max. forward current at case temperature 5 DC 3 2 d RthJH (K/W) DC 180 120 60 30 3.0 3.35 3.56 4.0 4.64 Constants for ZthJH calculation: i 1 0 10-3 0 Tamb 10-2 10-1 100 101 102 103 s t 104 1 2 3 4 Rthi (K/W) ti (s) 0.095 0.515 1.39 1.0 0.00032 0.0102 0.360 2.30 Fig. 6 Transient thermal impedance junction to heatsink (c) 2000 IXYS All rights reserved 2-2