© 2000 IXYS All rights reserved 1 - 2
VRSM V(BR)min
ÿ
①VRRM Standard Avalanche
V V V Types Types
900 800 DS 9-08F
1300 1300 1200 DS 9-12F DSA 9-12F
1700 1750 1600 DSA 9-16F
1900 1950 1800 DSA 9-18F
① Only for Avalanche Diodes
Symbol Test Conditions Maximum Ratings
IF(RMS) TVJ = TVJM 18 A
IF(AVM) Tcase = 150°C; 180° sine 11 A
PRSM DSA types, TVJ = TVJM, tp = 10 ms 4.5 kW
IFSM TVJ = 45°C; t = 10 ms (50 Hz), sine 250 A
VR= 0 t = 8.3 ms (60 Hz), sine 265 A
TVJ = TVJM t = 10 ms (50 Hz), sine 200 A
VR= 0 t = 8.3 ms (60 Hz), sine 220 A
I2tTVJ = 45°C t = 10 ms (50 Hz), sine 310 A2s
VR= 0 t = 8.3 ms (60 Hz), sine 295 A2s
TVJ = TVJM t = 10 ms (50 Hz), sine 200 A2s
VR= 0 t = 8.3 ms (60 Hz), sine 190 A2s
TVJ -40...+180 °C
TVJM 180 °C
Tstg -40...+180 °C
MdMounting torque 2.2-2.8 Nm
19-25 lb.in.
Weight 5g
VRRM = 800-1800 V
IF(RMS) = 18 A
IF(AV)M = 11 A
Features
●International standard package,
JEDEC DO-203 AA
●Planar glassivated chips
Applications
●Supplies for DC power equipment
●DC supply for PWM inverter
●Field supply for DC motors
●Battery DC power supplies
Advantages
●Space and weight savings
●Simple mounting
●Improved temperature and power
cycling
●Reduced protection circuits
Symbol Test Conditions Characteristic Values
IRTVJ = TVJM; VR = VRRM £3mA
VFIF= 36 A; TVJ = 25°C£1.4 V
VT0 For power-loss calculations only 0.85 V
rTTVJ = TVJM 15 mW
RthJC DC current 2.0 K/W
180° sine 2.17 K/W
RthJH DC current 3.0 K/W
dSCreepage distance on surface 2.0 mm
dAStrike distance through air 2.0 mm
aMax. allowable acceleration 100 m/s2
Dimensions in mm (1 mm = 0.0394")
Data according to IEC 60747
IXYS reserves the right to change limits, test conditions and dimensions
DS 9
DSA 9
Rectifier Diode
A valanche Diode
ACDO-203 AA
A = Anode C = Cathode
C
A
M5
© 2000 IXYS All rights reserved 2 - 2
10-3 10-2 10-1 100101
0
50
100
150
200
250
300
23456789110
200
400
600
800
100
1000
0.00.20.40.60.81.01.21.41.6
0
10
20
30
40
50
0 5 10 15 20
0
5
10
15
20
25
0 50 100 150 200
0
10-3 10-2 10-1 100101102103104
0
1
2
3
4
5
I2t
IFSM
A
IF
A
VFtstms
PF
W
IF(AV)M
ATamb
°C
ts
ZthJH
K/W
A2s
0 50 100 150 200 250
0
5
10
15
20
25
IF(AV)M
Tc
A
°C
V
DS 9
DSA 9
Fig. 6 Transient thermal impedance junction to heatsink
Fig. 1 Forward characteristics Fig. 2 Surge overload current
IFSM: crest value, t: duration Fig. 3 I2t versus time (1-10 ms)
RthJH for various conduction angles d:
dR
thJH (K/W)
DC 3.0
180°3.35
120°3.56
60°4.0
30°4.64
Constants for ZthJH calculation:
iR
thi (K/W) ti (s)
1 0.095 0.00032
2 0.515 0.0102
3 1.39 0.360
4 1.0 2.30
Fig. 4 Power dissipation versus forward current and ambient temperature Fig. 5 Max. forward current at case
temperature
typ. lim.
TVJ= 180°C
TVJ= 25°C
50Hz, 80%VRRM
TVJ = 45°C
TVJ = 180°C
VR = 0 V
TVJ=45°C
TVJ=180°C
DC
d = 180° sin
d = 120°
d = 60°
d = 30°
30°
60°
120°
180°
DC
RthJA :
8.3 K/W
13 K/W
(CU80x80)
18 K/W
DC
180° sin
120°
60°
30°
ase
