DSA300I45NA preliminary Schottky Diode Gen VRRM = 45 V I FAV = 300 A VF = 0.76 V High Performance Schottky Diode Low Loss and Soft Recovery Single Diode Part number DSA300I45NA Backside: Isolated 2 1 3 4 Features / Advantages: Applications: Package: SOT-227B (minibloc) Very low Vf Extremely low switching losses Low Irm values Improved thermal behaviour High reliability circuit operation Low voltage peaks for reduced protection circuits Low noise switching Rectifiers in switch mode power supplies (SMPS) Free wheeling diode in low voltage converters Isolation Voltage: 3000 V~ Industry standard outline RoHS compliant Epoxy meets UL 94V-0 Base plate: Copper internally DCB isolated Advanced power cycling IXYS reserves the right to change limits, conditions and dimensions. (c) 2012 IXYS all rights reserved Data according to IEC 60747and per semiconductor unless otherwise specified 20120907a DSA300I45NA preliminary Ratings Schottky Conditions Symbol VRSM Definition max. non-repetitive reverse blocking voltage TVJ = 25C max. 45 Unit V VRRM max. repetitive reverse blocking voltage TVJ = 25C 45 V IR reverse current, drain current VF min. VR = 45 V TVJ = 25C 3 mA VR = 45 V TVJ = 150C 30 mA TVJ = 25C 0.84 V 1.14 V 0.76 V I F = 300 A forward voltage drop typ. I F = 600 A TVJ = 125C I F = 300 A I F = 600 A I FAV average forward current VF0 threshold voltage rF slope resistance R thJC thermal resistance junction to case TC = 100C rectangular 1.10 V T VJ = 150 C 300 A TVJ = 150 C 0.41 V d = 0.5 for power loss calculation only R thCH thermal resistance case to heatsink Ptot total power dissipation I FSM max. forward surge current t = 10 ms; (50 Hz), sine; VR = 0 V TVJ = 45C CJ junction capacitance VR = TVJ = 25C IXYS reserves the right to change limits, conditions and dimensions. (c) 2012 IXYS all rights reserved 1.12 m 0.15 K/W K/W 0.10 TC = 25C 5 V f = 1 MHz 16.5 Data according to IEC 60747and per semiconductor unless otherwise specified 830 W 4.80 kA nF 20120907a DSA300I45NA preliminary Package Ratings SOT-227B (minibloc) Symbol I RMS Definition Conditions RMS current per terminal Tstg storage temperature T VJ virtual junction temperature min. typ. max. 150 Unit A -40 150 C -40 150 C 1) Weight 30 MD mounting torque MT terminal torque d Spp/App d Spb/Apb VISOL 1) 1.5 1.1 1.5 Nm Nm 10.5 3.2 mm terminal to backside 8.6 6.8 mm 3000 V 2500 V t = 1 second t = 1 minute 1.1 terminal to terminal creepage distance on surface | striking distance through air isolation voltage g 50/60 Hz, RMS; IISOL 1 mA IRMS is typically limited by the pin-to-chip resistance (1); or by the current capability of the chip (2). In case of (1) and a product with multiple pins for one chip-potential, the current capability can be increased by connecting the pins as one contact. Part number Product Marking abcde Logo YYWW Z D S A 300 I 45 NA Part No. XXXXXX = = = = = = = Diode Schottky Diode low VF Current Rating [A] Single Diode Reverse Voltage [V] SOT-227B (minibloc) Assembly Code DateCode Assembly Line Ordering Standard Part Number DSA300I45NA Similar Part DSA300I100NA DSA300I200NA Equivalent Circuits for Simulation I V0 R0 Marking on Product DSA300I45NA Package SOT-227B (minibloc) SOT-227B (minibloc) * on die level Delivery Mode Tube Code No. 511251 Voltage class 100 200 T VJ = 150C Schottky V 0 max threshold voltage 0.41 V R 0 max slope resistance * 0.28 m IXYS reserves the right to change limits, conditions and dimensions. (c) 2012 IXYS all rights reserved Quantity 10 Data according to IEC 60747and per semiconductor unless otherwise specified 20120907a DSA300I45NA preliminary Outlines SOT-227B (minibloc) 2 1 3 4 IXYS reserves the right to change limits, conditions and dimensions. (c) 2012 IXYS all rights reserved Data according to IEC 60747and per semiconductor unless otherwise specified 20120907a DSA300I45NA preliminary Schottky 600 500 400 IF 300 TVJ = 25C 125C 150C [A] 200 100 0 0.2 0.4 0.6 0.8 1.0 1.2 VF [V] Fig. 2 Typ. reverse current IR vs. reverse voltage VR Fig. 1 Max. forward voltage drop characteristics Fig. 3 Typ. junction capacitance CT vs. reverse voltage VR 350 dc = 1 0.5 0.4 0.33 0.17 0.08 200 150 P(AV) RthHA 0.2 0.4 0.6 0.8 1.0 2.0 300 250 IF(AV) dc = 1 0.5 0.4 0.33 0.17 200 [A] 100 [W] 150 100 50 50 0 0 0 50 100 150 200 IF(AV) [A] 250 0 40 80 120 160 0 40 80 120 160 TC [C] Tamb [C] Fig. 5 Average forward current IF(AV) vs. case temp. TC Fig. 4a Power dissipation versus direct output current Fig. 4b and ambient temperature 0.16 0.12 ZthJC Rthi [K/W] 0.017 0.013 0.02 0.05 0.05 0.08 [K/W] 0.04 ti [s] 0.01 0.00001 0.01 0.045 0.3 0.00 1 10 100 1000 10000 t [ms] Fig. 6 Transient thermal impedance junction to case IXYS reserves the right to change limits, conditions and dimensions. (c) 2012 IXYS all rights reserved Data according to IEC 60747and per semiconductor unless otherwise specified 20120907a Mouser Electronics Authorized Distributor Click to View Pricing, Inventory, Delivery & Lifecycle Information: IXYS: DSA300I45NA