5STP 10D1601 5STP 10D1601 Old part no. T 907-1000-16 Phase Control Thyristor Properties High operational capability Possibility of serial and parallel connection Applications Controlled rectifiers AC drives Key Parameters V DRM , V RRM = 1 600 I TAVm = 969 I TSM = 15 000 V TO = 0.933 rT = 0.302 V A A V m Types VRRM, VDRM 5STP 10D1601 1 600 V Conditions: Tj = -40 / 125 C, half sine waveform, f = 50 Hz Mechanical Data Fm Mounting force m Weight DS Surface creepage distance 25 mm Da Air strike distance 14 mm 10 2 kN 0.26 kg Fig. 1 Case ABB s.r.o. Novodvorska 1768/138a, 142 21 Praha 4, Czech Republic tel.: +420 261 306 250, http://www.abb.com/semiconductors TS - T/070/02a Jul-11 1 of 5 5STP 10D1601 Maximum Ratings Maximum Limits Unit 1 600 V 1 521 A 969 A tp = 10 ms tp = 8.3 ms 15 000 16 000 A tp = 10 ms tp = 8.3 ms 1 125 000 1 060 000 A2s 200 A/s 1 000 V/s VRRM VDRM Repetitive peak reverse and off-state voltage ITRMS RMS on-state current Tj = -40 125 C Tc = 70 C, half sine waveform, f = 50 Hz ITAVm Average on-state current Tc = 70 C, half sine waveform, f = 50 Hz ITSM Peak non-repetitive surge half sine pulse, VR = 0 V I2t Limiting load integral half sine pulse, VR = 0 V (diT/dt)cr Critical rate of rise of on-state current IT = ITAVm, half sine waveform, f = 50 Hz, VD = 2/3 VDRM, tr = 0.3 s, IGT = 2 A (dvD/dt)cr Critical rate of rise of off-state voltage VD = 2/3 VDRM PGAVm Maximum average gate power losses 3 W IFGM Peak gate current 10 A VFGM Peak gate voltage 12 V VRGM Reverse peak gate voltage 10 V Tjmin - Tjmax Operating temperature range -40 / 125 C Tstgmin Tstgmax Storage temperature range -40 / 125 C Unless otherwise specified Tj = 125 C ABB s.r.o., Novodvorska 1768/138a, 142 21 Praha 4, Czech Republic ABB s.r.o. reserves the right to change the data contained herein at any time without notice TS - T/070/02a Jul-11 2 of 5 5STP 10D1601 Characteristics Value min. VTM typ. Maximum peak on-state voltage Unit max. 1.400 V ITM = 1 500 A VT0 Threshold voltage 0.933 V rT Slope resistance 0.302 m IT1 = 1 206 A, IT2 = 3 619 A IDM Peak off-state current VD = VDRM 70 mA IRM Peak reverse current VR = VRRM 70 mA tgd Delay time 2 s Tj = 25 C, VD = 0.4 VDRM, ITM = ITAVm, tr = 0.3 s, IGT = 2 A tq Turn-off time 150 s 1 400 C IT = 1 500 A, diT/dt = 12.5 A/s, VD = 2/3 VDRM, dvD/dt = 50 V/s Qrr Recovery charge the same conditions as at tq IH Holding current Tj = 25 C Tj = 125 C 170 90 mA IL Latching current Tj = 25 C Tj = 125 C 450 350 mA VGT Gate trigger voltage Tj = - 40 C Tj = 25 C Tj = 125 C VD = 12V, IT = 4 A IGT Gate trigger current VD = 12V, IT = 4 A Tj = - 40 C Tj = 25 C Tj = 125 C V 0.25 4 3 2 mA 10 500 250 150 Unless otherwise specified Tj = 125 C Thermal Parameters Rthjc Thermal resistance junction to case Value Unit 32.0 K/kW double side cooling Rthch anode side cooling 52.0 cathode side cooling 83.0 Thermal resistance case to heatsink 10.0 K/kW double side cooling single side cooling 20.0 ABB s.r.o., Novodvorska 1768/138a, 142 21 Praha 4, Czech Republic ABB s.r.o. reserves the right to change the data contained herein at any time without notice TS - T/070/02a Jul-11 3 of 5 5STP 10D1601 Transient Thermal Impedance i Analytical function for transient thermal impedance i( 5 Z thjc R i (1 exp( t / 2 3 4 5 0.4857 0.2162 0.0762 0.0043 0.0006 13.07 8.03 8.20 2.57 0.13 Ri( K/kW ) i )) Transient thermal impedance junction to case Zthjc ( K/kW ) i 1 Conditions: Fm = 10 2 kN, Double side cooled Correction for periodic waveforms 180 sine: s) 1 add 2.3 K/kW 180 rectangular: add 3.1 K/kW 120 rectangular: add 5.2 K/kW 60 rectangular: add 8.7 K/kW 35 30 25 20 15 10 5 0 0,001 0,01 0,1 1 10 Square w ave pulse duration t d ( s ) 125 C 6000 26 1,6 i2dt 24 1,5 I TSM 22 1,4 20 1,3 18 1,2 16 1,1 14 1 12 0,9 10 0,8 5000 4000 3000 2000 1000 0 0 1 2 3 V (V) 4 T Fig. 3 Maximum on-state characteristics 8 1 10 t ( ms ) 0,7 100 Fig. 4 Surge on-state current vs. pulse length, half sine wave, single pulse, VR = 0 V, Tj = Tjmax ABB s.r.o., Novodvorska 1768/138a, 142 21 Praha 4, Czech Republic ABB s.r.o. reserves the right to change the data contained herein at any time without notice TS - T/070/02a Jul-11 4 of 5 i 2dt (106 A2s) T j = 25 C 7000 ITSM ( kA ) IT ( A ) Fig. 2 Dependence transient thermal impedance junction to case on square pulse = 30 60 90 120180 1800 1800 DC 1600 = 30 60 90 120 180 270 PT ( W ) PT ( W ) 5STP 10D1601 1600 DC 1400 1400 1200 1200 1000 1000 800 800 600 600 400 400 200 200 0 0 0 200 400 600 800 1000 1200 0 200 400 600 800 I TAV ( A ) 130 120 Fig. 6 On-state power loss vs. average on-state current, square waveform, f = 50 Hz, T = 1/f 130 120 110 110 100 100 90 90 80 80 DC DC 70 1200 I TAV ( A ) TC ( C ) TC ( C ) Fig. 5 On-state power loss vs. average on-state current, sine waveform, f = 50 Hz, T = 1/f 1000 70 270 = 30 60 60 0 200 400 600 90 120180 800 1000 1200 60 = 30 60 90120 180 0 200 400 600 I TAV ( A ) Fig. 7 Max. case temperature vs. aver. on-state current, sine waveform, f = 50 Hz, T = 1/f 800 1000 1200 I TAV ( A ) Fig. 8 Max. case temperature vs. aver. on-state current, square waveform, f = 50 Hz, T = 1/f Notes: ABB s.r.o., Novodvorska 1768/138a, 142 21 Praha 4, Czech Republic ABB s.r.o. reserves the right to change the data contained herein at any time without notice TS - T/070/02a Jul-11 5 of 5