ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
V
DRM
=
1800
V
I
=
3108 A
I
T(RMS)
=
4882 A
I
TSM
=
47×103 A
V
(T0)
=
0.984 V
r
T
=
0.081
m
Ω
Phase Control Thyristor
5STP 30H1801
Doc. No. 5SYA1066-01 March 05
• Low on-state and switching losses
• Designed for traction, energy and industrial applications
• Optimum power handling capability
Blocking
Maximum rated values 1)
Symbol Conditions 5STP 30H1801
5STP 30H1601
5STP 30H1401
VDRM, VRRM f = 50 Hz, tp = 10 ms 1800 V 1600 V 1400 V
dV/dtcrit Exp. to 1210 V, Tvj = 125°C 1000 V/µs
Characteristic values
Parameter Symbol Conditions min typ max Unit
Forward leakage current IDRM VDRM, Tvj = 125°C 200 mA
Reverse leakage current IRRM VRRM, Tvj = 125°C 200 mA
Mechanical data
Maximum rated values 1)
Parameter Symbol Conditions min typ max Unit
Mounting force FM 45 50 55 kN
Acceleration a Device unclamped 50 m/s2
Acceleration a Device clamped 100 m/s2
Characteristic values
Parameter Symbol Conditions min typ max Unit
Weight m 0.93 kg
Surface creepage distance DS 36 mm
Air strike distance Da 15 mm
1) Maximum rated values indicate limits beyond which damage to the device may occur
5STP 30H1801
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
Doc. No. 5SYA1066-01 March 05 page 2 of 6
On-state
Maximum rated values 1)
Parameter Symbol
Conditions min typ max Unit
Average on-state current IT(AV)M Half sine wave, Tc = 70°C 3108 A
RMS on-state current IT(RMS) 4882 A
Peak non-repetitive surge
current ITSM 47×103 A
Limiting load integral I2t
tp = 10 ms, Tvj = 125 °C,
VD = VR = 0 V 11.05×106
A2s
Peak non-repetitive surge
current ITSM 50.2×103 A
Limiting load integral I2t
tp = 8.3 ms, Tvj = 125 °C,
VD = VR = 0 V 10.46×106
A2s
Characteristic values
Parameter Symbol
Conditions min typ max Unit
On-state voltage VT IT = 4000 A, Tvj = 125 °C 1.3 V
Threshold voltage V(T0) 0.984 V
Slope resistance rT IT = 4000 A - 11500 A, Tvj= 125 °C 0.081 mΩ
Holding current IH Tvj = 25 °C 170 mA
Tvj = 125 °C 90 mA
Latching current IL Tvj = 25 °C 1500 mA
Tvj = 125 °C 1000 mA
Switching
Maximum rated values 1)
Parameter Symbol
Conditions min typ max Unit
Critical rate of rise of on-
state current di/dtcrit Cont.
f = 50 Hz
200 A/µs
Critical rate of rise of on-
state current di/dtcrit
Tvj = 125 °C,
ITRM = A,
VD ≤ 1880 V,
IFG = 2 A, tr = 0.3 µs Cont.
f = 1 Hz 1000 A/µs
Circuit-commutated turn-off
time tq Tvj = 125°C, ITRM = 4000 A,
VR = 100 V, diT/dt = -12.5 A/µs,
VD ≤ 0.67⋅VDRM, dvD/dt = 50V/µs
200 µs
Characteristic values
Parameter Symbol
Conditions min typ max Unit
Recovery charge Qrr Tvj = 125°C, ITRM = 4000 A,
VR = 100 V,
diT/dt = -12.5 A/µs
2800 µAs
Gate turn-on delay time tgd VD = 0.4⋅VRM, IFG = 2 A,
tr = 0.3 µs, Tvj = 25 °C 2 µs
5STP 30H1801
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
Doc. No. 5SYA1066-01 March 05 page 3 of 6
Triggering
Maximum rated values 1)
Parameter Symbol
Conditions min typ max Unit
Peak forward gate voltage V
FGM 12 V
Peak forward gate current IFGM 10 A
Peak reverse gate voltage V
RGM 10 V
Mean forward gate power PG(AV) 5 W
Characteristic values
Parameter Symbol
Conditions min typ max Unit
Gate-trigger voltage VGT Tvj = -40 °C
Tvj = 25 °C
Tvj = 125 °C
0.25
4
3
2
V
Gate-trigger current IGT Tvj = -40 °C
Tvj = 25 °C
Tvj = 125 °C
10
500
250
150
mA
Thermal
Maximum rated values 1)
Parameter Symbol
Conditions min typ max Unit
Operating junction
temperature range Tvj -40 125 °C
Storage temperature range T
stg -40 125 °C
Characteristic values
Parameter Symbol
Conditions min typ max Unit
Thermal resistance junction
to case Rth(j-c) Double-side cooled
Fm = 45...55 kN 10 K/kW
Rth(j-c)A Anode-side cooled
Fm = 45...55 kN 16 K/kW
Rth(j-c)C Cathode-side cooled
Fm = 45...55 kN 26.5 K/kW
Thermal resistance case to
heatsink Rth(c-h) Double-side cooled
Fm = 45...55 kN 3 K/kW
Rth(c-h) Single-side cooled
Fm = 45...55 kN 6 K/kW
Analytical function for transient thermal
impedance:
)e-(1R = (t)Z n
1i
t/-
ith c)-th(j ∑
=
i
τ
i 1 2 3 4
Rth i(K/kW)
6.730 1.440 0.650 1.160
τi(s) 0.4871 0.1468 0.0677 0.0079
Fig. 1 Transient thermal impedance junction-to case.
5STP 30H1801
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
Doc. No. 5SYA1066-01 March 05 page 4 of 6
0
2000
4000
6000
8000
10000
12000
14000
16000
18000
20000
22000
0 0,5 1 1,5 2 2,5 3
VT ( V )
IT ( A )
25°C
125°C
30
35
40
45
50
55
60
65
70
75
1 10 100
t ( ms )
ITSM ( kA )
7
8
9
10
11
12
13
14
15
16
i2dt (106 A2s)
I
TSM
∫i
2
dt
Fig. 2 Max. on-state voltage characteristics Fig. 3 Surge forward current vs. pulse length. Half
sine wave, single pulse, VR = 0 V
0
1
2
3
4
5
6
7
00,5 1 I
G
( A )
V
G
( V )
+125 °C
+25 °C
-40 °C
I
GTmin
V
GTmin
DC = P
GAVm
0
2
4
6
8
10
12
14
0 2 4 6 8 10 12
IG ( A )
V
G
( V )
DC = P GAVm
10ms
1ms
500µs
V
FGM
I
FGM
Fig. 4 Gate trigger characteristics Fig. 5 Gate trigger characteristics
5STP 30H1801
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
Doc. No. 5SYA1066-01 March 05 page 5 of 6
0
1000
2000
3000
4000
5000
6000
0 1000 2000 3000
I
TAV
( A )
P
T
( W )
ψ
= 30°
60°
90°
120°
180°
DC
0
1000
2000
3000
4000
5000
6000
0 1000 2000 3000
I
TAV
( A )
P
T
( W )
ψ
= 30°
60°
90°
120°
180°
270°
DC
Fig. 6 Forward power loss vs. average forward
current, sine waveform, f = 50 Hz, T = 1/f Fig. 7 Forward power loss vs. average forward
current, square waveform, f = 50 Hz, T = 1/f
60
70
80
90
100
110
120
130
01000 2000 3000
I
TAV
( A )
T
C
( °C )
180°
60°
90°
120°
ψ
= 30°
DC
60
70
80
90
100
110
120
130
0 1000 2000 3000
I
TAV
( A )
T
C
( °C )
180°
DC
270°
120°
90°
60°
ψ
= 30°
Fig. 8 Max. case temperature vs.average forward
current, sine waveform, f = 50Hz, T = 1/f Fig. 9 Max. case temperature vs.average forward
current, square waveform, f = 50Hz, T = 1/f
5STP 30H1801
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
ABB Switzerland Ltd Doc. No. 5SYA1066-01 March 05
Semiconductors
Fabrikstrasse 3
CH-5600 Lenzburg, Switzerland
Telephone +41 (0)58 586 1419
Fax +41 (0)58 586 1306
Email abbsem@ch.abb.com
Internet www.abb.com/semiconductors
RED
WHITE
Fig. 10 Device Outline Drawing.
Related application notes:
Doc. Nr Titel
5SYA2020 Design of RC-Snubber for Phase Control Applications
5SYA2034 Gate-drive Recommendations for PCT's
5SYA 2036 Recommendations regarding mechanical clamping of Press Pack High Power Semiconductors
Please refer to http://www.abb.com/semiconductors for actual versions.