2SK4013
2013-11-01
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TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSⅣ)
2SK4013
Switching Regulator Applications
• Low drain-source ON resistance: RDS (ON) = 1.35 Ω (typ.)
• High forward transfer admittance: |Yfs| = 5.0 S (typ.)
• Low leakage current: IDSS = 100 μA (max) (VDS = 640 V)
• Enhancement-model: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics Symbol Rating Unit
Drain-source voltage VDSS 800 V
Drain-gate voltage (RGS = 20 kΩ) VDGR 800 V
Gate-source voltage VGSS ±30 V
DC (Note 1) ID 6
Drain current
Pulse (Note 1) IDP 18
A
Drain power dissipation (Tc = 25°C) PD 45 W
Single pulse avalanche energy
(Note 2)
EAR 317 mJ
Avalanche current IAR 6 A
Repetitive avalanche energy (Note 3) EAR 4.5 mJ
Channel temperature Tch 150 °C
Storage temperature range Tstg −55 to 150 °C
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate
reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and
Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
Thermal Characteristics
Characteristics Symbol Max Unit
Thermal resistance, channel to case Rth (ch-c) 2.78 °C/W
Thermal resistance, channel to ambient Rth (ch-a) 62.5 °C/W
Note 1: Please use devices on condition that the channel temperature is below 150°C.
Note 2: VDD = 90 V, Tch = 25°C (initial), L = 14.5 mH, RG = 25 Ω, IAR = 6 A
Note 3: Repetitive rating; pulse width limited by maximum channel temperature.
This transistor is an electrostatic sensitive device. Please handle with caution.
Unit: mm
JEDEC ⎯
JEITA SC-67
TOSHIBA 2-10U1B
Weight: 1.7 g (typ.)
1: Gate
2: Drain
3: Source
1
3
2
Start of commercial production
2007-07
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Electrical Characteristics (Ta = 25°C)
Characteristics Symbol Test Condition Min Typ. Max Unit
Gate leakage current IGSS V
GS = ±25 V, VDS = 0 V ⎯ ⎯ ±10 μA
Drain-source breakdown voltage V (BR) GSS IG = ±10 μA, VDS = 0 V ±30 ⎯ ⎯ V
Drain cut-OFF current IDSS V
DS = 640 V, VGS = 0 V ⎯ ⎯ 100 μA
Drain-source breakdown voltage V (BR) DSS ID = 10 mA, VGS = 0 V 800 ⎯ ⎯ V
Gate threshold voltage Vth V
DS = 10 V, ID = 1 mA 2.0 ⎯ 4.0 V
Drain-source ON resistance RDS (ON) V
GS = 10 V, ID = 3 A ⎯ 1.35 1.7 Ω
Forward transfer admittance ⎪Yfs⎪ V
DS = 20 V, ID = 3 A 2.5 5.0 ⎯ S
Input capacitance Ciss ⎯ 1400 ⎯
Reverse transfer capacitance Crss ⎯ 30 ⎯
Output capacitance Coss
VDS = 25 V, VGS = 0 V, f = 1 MHz
⎯ 130 ⎯
pF
Rise time tr ⎯ 25 ⎯
Turn-ON time ton ⎯ 80 ⎯
Fall time tf ⎯ 65 ⎯
Switching time
Turn-OFF time toff
⎯ 220 ⎯
ns
Total gate charge
(gate-source plus gate-drain) Qg ⎯ 45 ⎯
Gate-source charge Qgs ⎯ 25 ⎯
Gate-drain (“miller”) charge Qgd
VDD
∼
−
400 V, VGS = 10 V, ID = 6 A
⎯ 20 ⎯
nC
Source-Drain Ratings and Characteristics (Ta = 25°C)
Characteristics Symbol Test Condition Min Typ. Max Unit
Continuous drain reverse current (Note 1) IDR ⎯ ⎯ ⎯ 6 A
Pulse drain reverse current (Note 1) IDRP ⎯ ⎯ ⎯ 18 A
Forward voltage (diode) VDSF I
DR = 6 A, VGS = 0 V ⎯ ⎯ −1.7
V
Reverse recovery time trr ⎯ 1100 ⎯ ns
Reverse recovery charge Qrr
IDR = 6 A, VGS = 0 V,
dIDR/dt = 100 A/μs ⎯ 10 ⎯ μC
Marking
Duty ≤ 1%, tw = 10 μs
0 V
10 V
VGS
RL= 133 Ω
VDD
∼
−
400 V
ID = 3 A VOUT
50 Ω
Lot No.
Note 4
K4013
Part No. (or abbreviation code)
Note 4: A line under a Lot No. identifies the indication of product
Labels.
Not underlined: [[Pb]]/INCLUDES > MCV
Underlined: [[G]]/RoHS COMPATIBLE or [[G]]/RoHS [[Pb]]
Please contact your TOSHIBA sales representative for details as to
environmental matters such as the RoHS compatibility of Product.
The RoHS is the Directive 2011/65/EU of the European Parliament
and of the Council of 8 June 2011 on the restriction of the use of
certain hazardous substances in electrical and electronic equipment.
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Common source
Ta
=
25
℃
Pulse test
0
1
2
3
4
5
0246810
VGS=4.5V
5.25
5
5.5
6
Common source
Tc ＝ 25°C
Puls e t es t
8,10
ID − VDS
5.25
5.5
5
0.1
1
10
100
0.1 1 10 100
Common source
V
DS
=20V
Pulse test
Ta=100℃
-55
25
0
4
8
12
16
0246810
Common source
V
DS
=20V
Pulse test
Ta=100℃
25
-55
0
2
4
6
8
10
0 1020304050
Common
source
Ta=25℃
Pulse
t
est
VGS=4.5V
5.25
5
5.5
8,10
5.75
6
0.10
1.00
10.00
0.01 0.1 1 10
Common source
V
GS
=10V
Tc=25℃
Pulse test
ID − VDS
ID − VDS
ID − VGS
VDS − VGS
⎪Yfs⎪ − ID
RDS (ON) − ID
DRAIN−SOURCE VOLTAGE VDS (V)
DRAIN−SOURCE VOLTAGE VDS (V)
GATE−SOURCE VOLTAGE VGS (V)
GATE−SOURCE VOLTAGE VGS (V)
DRAIN CURRENT ID (A)
DRAIN CURRENT ID (A)
DRAIN CURRENT ID (A)
DRAIN CURRENT ID (A)
DRAIN−SOURCE VOLTAGE VDS (V)
DRAIN CURRENT ID (A)
DRAIN−SOURCE ON RESISTANCE
RDS (ON) (Ω)
FORWARD TRANSFER ADMITTANCE
⎪Yfs⎪ (S)
COMMON SOURCE
Tc = 25°C
PULSE TEST
40 20
812 16
0
2
6
4
6
3
ID = 1.5 A
10
8
COMMON SOURCE
Tc = 25°C
PULSE TEST
Tc = 100°C
Tc = 100°C
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10
100
1000
10000
0.1 1 10 100
Ciss
Coss
CrssCommon source
V
GS
=0V
f=1MHz
Tc=25℃
0.1
1
10
-1.2-1-0.8-0.6-0.4-0.20
Common source
Tc=25℃
Pulse test
VGS=0､-1V
1
3
10
0
1
2
3
4
5
-80 -40 0 40 80 120 160
Common source
V
DS
=10V
ID=1mA
Pulse test
0
1
2
3
4
5
-80 -40 0 40 80 120 160
Common source
V
GS
=10V
Pulse test
ID=1.5A
7
3
RDS (ON) − Tc
IDR − VDS
C – VDS
Vth − Tc
DYNAMIC INPUT/OUTPUT
CHARACTERISTICS
CASE TEMPERATURE Tc (°C)
DRAIN−SOURCE VOLTAGE VDS (V)
DRAIN−SOURCE VOLTAGE VDS (V)
CASE TEMPERATURE Tc (°C)
TOTAL GATE CHARGE Qg (nC)
DRAIN REVERSE CURRENT IDR (A)
DRAIN−SOURCE ON RESISTANCE
RDS (ON) (Ω)
GATE THRESHOLD VOLTAGE Vth (V)
CAPACITANCE C (pF)
DRAIN−SOURCE VOLTAGE VDS (V)
GATE−SOURCE VOLTAGE VGS (V)
P
D
- Tc
0
20
40
60
0 40 80 120 160
CA SE TEMPERA TURE Tc
(℃)
DRAIN POWER DISSIPATION P
D
(W)
6
450
300
0
0
15
10
0
VDS = 400 V
200
VGS
VDS
40 60 80 100 20
100
150 5
Common source
ID = 6 A
Tc = 25°C
Pulse test
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0.01
10μ
0.1
1
10
100μ 1ｍ 10ｍ100ｍ1 10
T
PDM
t
Duty = t/T
Rth (ch-c) = 2.78°C/W
Duty=0.5
0.2
0.1
0.05
0.02
0.01
0.001
rth – tw
PULSE WIDTH tw (s)
NORMALIZED TRANSIENT THERMAL
IMPEDANCE rth (t)/Rth (ch-c)
Duty=0.5
SINGLE PULSE
E
AS
- T
ch
0
50
100
150
200
250
300
350
400
25 50 75 100 125 150
CHA NNEL TEMPERA TURE ( INITIA L ) TcH (℃)
AVALANCHE ENERGY E
AS (mJ)
−15 V
15 V
TEST CIRCUIT WAVE FORM
IAR
BVDSS
VDD V
DS
RG = 25 Ω
VDD = 90 V, L = 14.5 mH ⎟
⎟
⎠
⎞
⎜
⎜
⎝
⎛
−
⋅⋅⋅= VDD
BVDSS
BVDSS
2
IL
2
1
ΕAS
AVALANCHE ENERGY EAS (mJ)
CHANNEL TEMPERATURE (INITIAL) Tch (°C)
DRAIN−SOURCE VOLTAGE VDS
V
SAFE OPERATING AREA
DRAIN CURRENT ID (A)
1
1
10
100
10 10000
1000
ID max (PULSE) *
ID max (CONTINUOUS) *
DC OPERATION
Tc = 25°C
100 μs *
1 ms *
VDSS max
0.01
0.1
100
*: SINGLE NONPETITIVE PULSE
Tc = 25°C
Curves must be derated linearly with
increase in temperature
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RESTRICTIONS ON PRODUCT USE
• Toshiba Corporation, and its subsidiaries and affiliates (collectively "TOSHIBA"), reserve the right to make changes to the information
in this document, and related hardware, software and systems (collectively "Product") without notice.
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TOSHIBA's written permission, reproduction is permissible only if reproduction is without alteration/omission.
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responsible for complying with safety standards and for providing adequate designs and safeguards for their hardware, software and
systems which minimize risk and avoid situations in which a malfunction or failure of Product could cause loss of human life, bodily
injury or damage to property, including data loss or corruption. Before customers use the Product, create designs including the
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all relevant TOSHIBA information, including without limitation, this document, the specifications, the data sheets and application notes
for Product and the precautions and conditions set forth in the "TOSHIBA Semiconductor Reliability Handbook" and (b) the
instructions for the application with which the Product will be used with or for. Customers are solely responsible for all aspects of their
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except in compliance with all applicable export laws and regulations.
• Please contact your TOSHIBA sales representative for details as to environmental matters such as the RoHS compatibility of Product.
Please use Product in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances,
including without limitation, the EU RoHS Directive. TOSHIBA ASSUMES NO LIABILITY FOR DAMAGES OR LOSSES
OCCURRING AS A RESULT OF NONCOMPLIANCE WITH APPLICABLE LAWS AND REGULATIONS.