FQPF12N60CT - Fairchild

FQPF12N60CT Rev. A

FQPF12N60CT 600V N-Channel MOSFET

September 2006

QFET®

FQPF12N60CT

600V N-Channel MOSFET

Features

• 12A, 600V, RDS(on) = 0.65Ω @VGS = 10 V

• Low gate charge ( typical 48 nC)

• Low Crss ( typical 21 pF)

•Fast switching

• 100% avalanche tested

• Improved dv/dt capability

Description

These N-Channel enhancement mode power field effect

transistors are produced using Fairchild’s proprietary, planar

stripe, DMOS technology.

This advanced technology has been especially tailored to

minimize on-state resistance, provide superior switching

performance, and withstand high energy pulse in the avalanche

and commutation mode. These devices are well suited for high

efficient switched mode power supplies, active power factor

correction, electronic lamp ballast based on half bridge

topology.

Absolute Maximum Ratings

Thermal Characteristics

GSD

TO-220F Potted

FQPF Series

Symbol Parameter FQPF12N60CT Units

VDSS Drain-Source Voltage 600 V

IDDrain Current - Continuous (TC = 25°C) 12* A

- Continuous (TC = 100°C) 7.4* A

IDM Drain Current - Pulsed (Note 1) 48* A

VGSS Gate-Source Voltage ± 30 V

EAS Single Pulsed Avalanche Energy (Note 2) 870 mJ

IAR Avalanche Current (Note 1) 12 A

EAR Repetitive Avalanche Energy (Note 1) 5.1 mJ

dv/dt Peak Diode Recovery dv/dt (Note 3) 4.5 V/ns

PDPower Dissipation (TC = 25°C) 51 W

- Derate above 25°C 0.41 W/°C

TJ, TSTG Operating and Storage Temperature Range -55 to +150 °C

Maximum lead temperature for soldering purposes,

1/8" from case for 5 seconds 300 °C

Symbol Parameter FQPF12N60CT Units

RθJC Thermal Resistance, Junction-to-Case 2.43 °C/W

RθJA Thermal Resistance, Junction-to-Ambient 62.5 °C/W

* Drain current limited by maximum junction temperature

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FQPF12N60CT Rev. A

FQPF12N60CT 600V N-Channel MOSFET

Package Marking and Ordering Information

Electrical Characteristics TC = 25°C unless otherwise noted

NOTES:

1. Repetitive Rating : Pulse width limited by maximum junction temperature

2. L = 11mH, IAS = 12A, VDD = 50V, RG = 25 Ω, Starting TJ = 25°C

3. ISD ≤ 12A, di/dt ≤200A/µs, VDD ≤ BVDSS, Starting TJ = 25°C

4. Pulse Test : Pulse width ≤ 300µs, Duty cycle ≤ 2%

5. Essentially independent of operating temperature

Device Marking Device Package Reel Size Tape Width Quantity

FQPF12N60CT FQPF12N60CT TO-220F -- -- 50

Symbol Parameter Test Conditions Min Typ Max Units

Off Characteristics

BVDSS Drain-Source Breakdown Voltage VGS = 0 V, ID = 250 µA 600 -- -- V

∆BVDSS/

∆TJ

Breakdown Voltage Temperature Coefficient ID = 250 µA, Referenced to 25°C -- 0.5 -- V/°C

IDSS Zero Gate Voltage Drain Current VDS = 600 V, VGS = 0 V -- -- 1 µA

VDS = 480 V, TC = 125°C -- -- 10 µA

IGSSF Gate-Body Leakage Current, Forward VGS = 30 V, VDS = 0 V -- -- 100 nA

IGSSR Gate-Body Leakage Current, Reverse VGS = -30 V, VDS = 0 V -- -- -100 nA

On Characteristics

VGS(th) Gate Threshold Voltage VDS = VGS, ID = 250 µA2.0--4.0V

RDS(on) Static Drain-Source On-Resistance VGS = 10 V, ID = 6 A -- 0.53 0.65 Ω

gFS Forward Transconductance VDS = 40 V, ID =6 A (Note 4) -- 13 -- S

Dynamic Characteristics

Ciss Input Capacitance VDS = 25 V, VGS = 0 V,

f = 1.0 MHz

-- 1760 2290 pF

Coss Output Capacitance -- 182 235 pF

Crss Reverse Transfer Capacitance -- 21 28 pF

Switching Characteristics

td(on) Turn-On Delay Time VDD = 300 V, ID = 12A,

RG = 25 Ω

(Note 4, 5)

-- 30 70 ns

trTurn-On Rise Time -- 85 180 ns

td(off) Turn-Off Delay Time -- 140 290 ns

tfTurn-Off Fall Time -- 90 190 ns

QgTotal Gate Charge VDS = 480 V, ID = 12A,

VGS = 10 V

(Note 4, 5)

-- 48 63 nC

Qgs Gate-Source Charge -- 8.5 -- nC

Qgd Gate-Drain Charge -- 21 -- nC

Drain-Source Diode Characteristics and Maximum Ratings

ISMaximum Continuous Drain-Source Diode Forward Current -- -- 12 A

ISM Maximum Pulsed Drain-Source Diode Forward Current -- -- 48 A

VSD Drain-Source Diode Forward Voltage VGS = 0 V, IS = 12 A -- -- 1.4 V

trr Reverse Recovery Time VGS = 0 V, IS = 12 A,

dIF / dt = 100 A/µs (Note 4)

-- 420 -- ns

Qrr Reverse Recovery Charge -- 4.9 -- µC

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FQPF12N60CT Rev. A

FQPF12N60CT 600V N-Channel MOSFET

Typical Performance Characteristics

Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics

Figure 3. On-Resistance Variation vs. Figure 4. Body Diode Forward Voltage

Drain Current and Gate Voltage Variation vs. Source Current

and Temperatue

Figure 5. Capacitance Characteristics Figure 6. Gate Charge Characteristics

100101

100

101

VGS

Top : 15.0 V

10.0 V

8.0 V

7.0 V

6.0 V

5.5 V

5.0 V

Bottom : 4.5 V

Notes :※

1. 250µ s Pulse Test

2. TC

= 25℃

ID, Drain Current [A]

VDS, Drain-Source Voltage [V]

246810

10-1

100

101

150oC

25oC

-55oC

Not es :※

1. VDS = 40V

2. 250µ s Pulse Test

ID, Drain Current [A]

VGS, Gate-Source Voltage [V]

0 5 10 15 20 25 30 35

0.5

1.0

1.5

VGS = 20V

VGS = 10V

Note : T※J = 25℃

RDS(ON) [Ω],

Drain-Source On-Resistance

, Drain Current [A]

0.2 0.4 0.6 0.8 1.0 1.2 1.4

10-1

100

101

150℃

Not es :※

1. VGS = 0V

2. 250µ s Pulse Test

25℃

IDR, Reverse Drain Current [A]

SD, Source-Drain voltage [V]

10-1 100101

500

1000

1500

2000

2500

3000

3500

iss = Cgs + Cgd (Cds = shorted)

oss = Cds + Cgd

rss = Cgd

Not es ;※

1. VGS = 0 V

2. f = 1 MHz

Crss

Coss

iss

Capacitance [pF]

DS, Drain-Source Voltage [V]

0 1020304050

VDS = 300V

VDS = 120V

VDS = 480V

Note : I※D

= 12A

VGS, Gate-Source Voltage [V]

, Total Gate Charge [nC]

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FQPF12N60CT Rev. A

FQPF12N60CT 600V N-Channel MOSFET

Typical Performance Characteristics (Continued)

Figure 7. Breakdown Voltage Variation Figure 8. On-Resistance Variation

vs. Temperature vs. Temperature

Figure 9. Maximum Safe Operating Area Figure 10. Maximum Drain Current

vs. Case Temperature

Figure 11. Transient Thermal Response Curve

-100 -50 0 50 100 150 200

0.8

0.9

1.0

1.1

1.2

Notes :※

1. VGS = 0 V

2. ID

= 250 µ A

BVDSS, (Normalized)

Drain-Source Breakdown Voltage

, Junction Temperature [o

-100 -50 0 50 100 150 200

0.0

0.5

1.0

1.5

2.0

2.5

3.0

Notes :※

1. VGS = 10 V

2. ID

= 6.0 A

RDS(ON), (Normalized)

Drain-Source On-Resistance

TJ, Junction Temperature [oC]

100101102103

10-2

10-1

100

101

102

100 ms

10 µs

10 ms

1 ms

100 µs

Operation i n This Area

is Limited by R DS(on)

Notes :※

1. TC

= 25 o

2. TJ

= 150 o

3. Single Pulse

ID, Drain Current [A]

DS, Drain-Source Voltage [V]

25 50 75 100 125 150

ID, Drain Current [A]

, Case Temperature [ ]℃

10-5 10-4 10-3 10-2 10-1 100101

10-2

10-1

100

N otes :※

1. ZθJC(t) = 2.43 /W M ax.℃

2. D uty Facto r, D =t1/t2

3. TJM - TC = PDM * ZθJC(t)

single pulse

D=0.5

0.02

0.2

0.05

0.1

0.01

ZθJC

(t), Thermal Response

t1, Square W ave Pulse Duration [sec]

PDM

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FQPF12N60CT Rev. A

FQPF12N60CT 600V N-Channel MOSFET

Gate Charge Test Circuit & Waveform

Resistive Switching Test Circuit & Waveforms

Unclamped Inductive Switching Test Circuit & Waveforms

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FQPF12N60CT Rev. A

FQPF12N60CT 600V N-Channel MOSFET

Peak Diode Recovery dv/dt Test Circuit & Waveforms

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Package Dimensions

TO-220F Potted

* Front/Back Side Isolation Voltage : AC 2500V

Dimensions in Millimeters

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FQPF12N60CT Rev. A

FQPF12N60CT 600V N-Channel MOSFET

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FQPF12N60CT Rev. A

FQPF12N60CT 600V N-Channel MOSFET

TRADEMARKS

The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be

an exhaustive list of all such trademarks.

DISCLAIMER

FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO

IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF

ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF

OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE

WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS.

LIFE SUPPORT POLICY

FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT

THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.

As used herein:

1. Life support devices or systems are devices or systems which,

(a) are intended for surgical implant into the body, or (b) support

or sustain life, or (c) whose failure to perform when properly used

in accordance with instructions for use provided in the labeling,

can be reasonably expected to result in significant injury to the

user.

2. A critical component is any component of a life support device

or system whose failure to perform can be reasonably expected to

cause the failure of the life support device or system, or to affect

its safety or effectiveness.

PRODUCT STATUS DEFINITIONS

Definition of Terms

ACEx™

ActiveArray™

Bottomless™

Build it Now™

CoolFET™

CROSSVOLT™

DOME™

EcoSPARK™

E2CMOS™

EnSigna™

FACT™

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FRFET™

FACT Quiet Series™

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i-Lo™

ImpliedDisconnect™

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MicroPak™

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MSX™

MSXPro™

OCX™

OCXPro™

OPTOLOGIC®

OPTOPLANAR™

PACMAN™

POP™

Power247™

PowerEdge™

PowerSaver™

PowerTrench®

QFET®

QS™

QT Optoelectronics™

Quiet Series™

RapidConfigure™

RapidConnect™

µSerDes™

ScalarPump™

SILENT SWITCHER®

SMART START™

SPM™

Stealth™

SuperFET™

SuperSOT™-3

SuperSOT™-6

SuperSOT™-8

SyncFET™

TCM™

TinyBoost™

TinyBuck™

TinyPWM™

TinyPower™

TinyLogic®

TINYOPTO™

TruTranslation™

UHC™

UniFET™

UltraFET®

VCX™

Wire™

Across the board. Around the world.™

The Power Franchise®

Programmable Active Droop™

Datasheet Identification Product Status Definition

Advance Information Formative or In

Design

This datasheet contains the design specifications for

product development. Specifications may change in

any manner without notice.

Preliminary First Production This datasheet contains preliminary data, and

supplementary data will be published at a later date.

Fairchild Semiconductor reserves the right to make

changes at any time without notice in order to improve

design.

No Identification Needed Full Production This datasheet contains final specifications. Fairchild

Semiconductor reserves the right to make changes at

any time without notice in order to improve design.

Obsolete Not In Production This datasheet contains specifications on a product

that has been discontinued by Fairchild semiconductor.

The datasheet is printed for reference information only.

Rev. I20

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