© 2019 Littelfuse, Inc.
Specifications are subject to change without notice.
Revised: 06/26/19
Thyristors
Surface Mount – 600V > Z0103MN, Z0107MN, Z0109MN
Sensitive Gate Trigger
Current in Four Trigger
Modes
Blocking Voltage to 600 V
Glass Passivated Surface
for Reliability and
Uniformity
Surface Mount Package
These are Pb−Free
Devices
Features
Designed for use in solid state relays, MPU interface, TTL
logic and other light industrial or consumer applications.
Supplied in surface mount package for use in automated
manufacturing.
Description
Z0103MN, Z0107MN, Z0109MN
Functional Diagram
Pb
Additional Information
Samples
Resources
Datasheet
MT 1
G
MT 2
4
1 2 3
Pin Out
© 2019 Littelfuse, Inc.
Specifications are subject to change without notice.
Revised: 06/26/19
Thyristors
Surface Mount – 600V > Z0103MN, Z0107MN, Z0109MN
Maximum Ratings (TJ = 25°C unless otherwise noted)
Rating Symbol Value Unit
Peak Repetitive Off−State Voltage (Note 1)
(RGK = IK, TJ− 40 to +125°C, Sine Wave, 50 to 60 Hz) VDRM,
VRRM 600 V
On-State RMS Current (Full Sine Wave 50 to 60 Hz; TC = 80°C) IT (RMS) 1.0 A
Peak Non−repetitive Surge Current
(One Full Cycle Sine Wave, 60 Hz, TC = 25ºC) IT (RMS) 8.0 A
Circuit Fusing Considerations (t = 8.3 ms) I2t 0.4 A2s
Average Gate Power (TC = 80°C, t ≤ 8.3 ms) PG(AV) 1.0 W
Peak Gate Current (t ≤ 20 s, TJ = +125°C) IGM 1.0 A
Operating Junction Temperature Range @ Rated VRRM and VDRM TJ-40 to +110 °C
Storage Temperature Range Tstg -40 to +150 °C
Thermal Characteristics
Rating Symbol Value Unit
Thermal Resistance, Junction−to−Ambient PCB Mounted per Figure 1 R8JA 156 °C/W
Thermal Resistance, Junction−to−Tab Measured on MT2 Tab Adjacent
to Epoxy R8JT 25 °C/W
Maximum Device Temperature for Soldering Purposes for
10 Secs Maximum TL260 °C
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied.
Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.
1. V DRM and VRRM for all types can be applied on a continuous basis. Ratings apply for zero or negative gate voltage; however, positive gate voltage shall not be applied concurrent with negative
potential on the anode. Blocking voltages shall not be tested with a constant current source such that the voltage ratings of the devices are exceeded.
Electrical Characteristics - OFF (TJ = 25°C unless otherwise noted)
Characteristic Symbol Min Ty p Max Unit
Peak Repetitive Forward or Reverse Blocking Current (Note 3)
(VAK = Rated VDRM or VRRM, RGK = 1000 kQ
TJ = 25°C IDRM,- - 5.0 μA
TJ = 125°C - - 500
© 2019 Littelfuse, Inc.
Specifications are subject to change without notice.
Revised: 06/26/19
Thyristors
Surface Mount – 600V > Z0103MN, Z0107MN, Z0109MN
Gate Trigger Voltage (Continuous dc)
(VD = 12 Vdc, RL = 30 Ohms) VGT 1.3 V
Gate−Controlled Turn−On Time,
(VD = Rated VDRM, ITM = 16 A Peak, IG = 30 mA) tgt 0.2 10 μs
Electrical Characteristics - ON (TJ = 25°C unless otherwise noted; Electricals apply in both directions) Continued
Electrical Characteristics - ON (TJ = 25°C unless otherwise noted; Electricals apply in both directions)
Characteristic Symbol Min Ty p Max Unit
Peak On−State Voltage (ITM = ±11 A Peak, Pulse Width ≤2 ms,
Duty Cycle ≤2%) VTM 1.8 V
Z0103MN
Gate Trigger Current
(Continuous dc)
(VD = 12 V, RL = 30 Ohms)
MT2(+), G(+)
IGT
0.15 3.0
mA
MT2(+), G(−) 0.15 3.0
MT2(−), G(−) 0.15 3.0
MT2(−), G(+) 0.25 5.0
Z0107MN
Gate Trigger Current
(Continuous dc)
(VD = 12 V, RL = 30 Ohms)
MT2(+), G(+)
IGT
0.15 5.0
mA
MT2(+), G(−) 0.15 5.0
MT2(−), G(−) 0.15 5.0
MT2(−), G(+) 0.25 7. 0
Z0109MN
Gate Trigger Current
(Continuous dc)
(VD = 12 V, RL = 30 Ohms)
MT2(+), G(+)
IGT
0.15 10
mA
MT2(+), G(−) 0.15 10
MT2(−), G(−) 0.15 10
MT2(−), G(+) 0.25 10
Z0103MN
Latching Current
(VD = 12 V, IG = 1.2 x IGT)
ALL TYPES
MT2(+), G(+)
IL
7. 0
mA
MT2(+), G(−) 15
MT2(−), G(−) 7. 0
MT2(−), G(+) 7. 0
Z0107MN
Latching Current
(VD = 12 V, IG = 1.2 x IGT)
ALL TYPES
MT2(+), G(+)
IL
10
mA
MT2(+), G(−) 20
MT2(−), G(−) 10
MT2(−), G(+) 10
Z0109MN
Latching Current
(VD = 12 V, IG = 1.2 x IGT)
ALL TYPES
MT2(+), G(+)
IL
15
mA
MT2(+), G(−) 25
MT2(−), G(−) 15
MT2(−), G(+) 15
© 2019 Littelfuse, Inc.
Specifications are subject to change without notice.
Revised: 06/26/19
Thyristors
Surface Mount – 600V > Z0103MN, Z0107MN, Z0109MN
Dynamic Characteristics
Characteristic Symbol Min Ty p Max Unit
Rate of Change of Commutating Current
(VD = 400 V, ITM = 0.84 A, Commutating dv/dt = 1.5 V/µs,
Gate Open, TJ = 110ºC, f = 250 Hz, with Snubber) dv/dt 1.6 A/ms
Critical Rate of Rise of On−State Current
(TC = 110°C, IG = 2 x IGT, RGK = 1 kΩ)
Z0103MN
di/dt
10 30 _
V/µsZ0107MN 20 60 _
Z0109MN 50 75 _
Repetitive Critical Rate of Rise of On−State Current,
TJ = 125ºC Pulse Width = 20 µs, IPKmax = 15 A,
diG/dt = 1 A/µs, f = 60 Hz 20 A/µs
Figure 1. PCB for Thermal Impedance and Power Testing
of SOT-223
0.079
2.0
0.079
2.0
0.059
1.5
0.091
2.3
0.091
2.3
mm
inches
0.472
12.0
0.096
2.44
0.984
25.0
0.244
6.2
0.059
1.5
0.059
1.5
0.096
2.44
0.096
2.44
0.059
1.5
0.059
1.5
0.15
3.8
BOARD MOUNTED VERTICALLY IN CINCH 8840 EDGE CONNECTOR
.
BOARD THICKNESS = 65 MIL., FOIL THICKNESS = 2.5 MIL.
MATERIAL: G10 FIBERGLASS BASE EPOXY
Voltage Current Characteristic of SCR
Quadrant Definitions for a Triac
Symbol Parameter
VDRM Peak Repetitive Forward Off State Voltage
IDRM Peak Forward Blocking Current
VRRM Peak Repetitive Reverse Off State Voltage
IRRM Peak Reverse Blocking Current
VTM Maximum On State Voltage
IHHolding Current
+C urrent
+V oltage
VTM
IH
IDR M at VDR M
on stat e
off stat e
IRR M at VRR M
Quadrant 1
Main Terminal 2 +
Quadrant 3
Main Terminal 2 VTM
IH
All polarities are referenced to MT1.
With in phase signals (using standard AC lines) quadrants I and III are used
MT 1
(+) IGT
GA TE
(+) MT 2
RE F
MT 1
() IGT
GA TE
(+) MT 2
RE F
MT 1
(+) IGT
GA TE
() MT 2
RE F
MT 1
() IGT
GA TE
() MT 2
RE F
MT2 NEGA TIVE
(Negative Half Cycle)
MT2 POSITIVE
(Positive Half Cycle)
+
VItnardauQIIItnardauQ
ItnardauQIItnardauQ
IGT +I GT
© 2019 Littelfuse, Inc.
Specifications are subject to change without notice.
Revised: 06/26/19
Thyristors
Surface Mount – 600V > Z0103MN, Z0107MN, Z0109MN
vT
I
T
10
1.0
0.
1
0.01 5.04.03.02.01.00
TYPICAL AT TJ = 110°C
MAX AT T
J = 110°C
MAX AT T
J = 25°C
TA, MAXIMUM ALLOWABLEA MBIENT TEMPERATURE ( C
)
°
I
T(RMS)
110
0.5
0.30.20.
1
0
100
90
80
60
50
40
30
20 0.4
70 dc
30° 60°
90°
α = 180°
MINIMUM FOOTPRINT
50 OR 60 Hz
120°
α
α
α = CONDUCTION
ANGLE
Figure 2. On-State Characteristics Figure 3. Junction to Ambient Thermal Resistance vs
Copper Tab Area
Figure 4. Current Derating, Minimum Pad Size Reference:
Ambient Temperature
Figure 6. Current Derating, 2.0 cm Square Pad Reference:
Ambient Temperature
Figure 5. Current Derating, 1.0 cm Square Pad Reference:
Ambient Temperature
Figure 7. Current Derating Reference: MT2 Tab
© 2019 Littelfuse, Inc.
Specifications are subject to change without notice.
Revised: 06/26/19
Thyristors
Surface Mount – 600V > Z0103MN, Z0107MN, Z0109MN
LL1N4007
200 V
+
MEASURE
I
-
CHARGE
CONTROL
CHARGE TRIGGER
CL
51
MT2
MT
1
1N914
G
TRIGGER CONTROL
200 VRMS
ADJUST FOR
I
TM, 60 Hz VAC
c. See AN1048 for additional information.
RS
ADJUST FOR
dv/dt
(c
)
CS
Figure 10. Simplified Test Circuit to Measure the Critical Rate of Rise of Commutating Voltage (dv/dt)c
Figure 8. Power Dissipation Figure 9. Thermal Response, Device Mounted on Figure 1
Printed Circuit Board
Figure 11. Typical Commutating dv/dt vs Current Crossing Rate
and Junction Temperature Figure 12. Typical Commutating dv/dt vs Junction Temperature at
0.8 Amps RMS
© 2019 Littelfuse, Inc.
Specifications are subject to change without notice.
Revised: 06/26/19
Thyristors
Surface Mount – 600V > Z0103MN, Z0107MN, Z0109MN
Figure 13. Exponential Static dv/dt versus Gate −
Main Terminal 1 Resistance Figure 14. Typical Gate Trigger Current Variation
Figure 15. Typical Holding Current Variation Figure 16. Gate Trigger Voltage Variation
© 2019 Littelfuse, Inc.
Specifications are subject to change without notice.
Revised: 06/26/19
Thyristors
Surface Mount – 600V > Z0103MN, Z0107MN, Z0109MN
Dimensions Soldering Footprint
Part Marking System
1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
Dim Inches Millimeters
Min Nom Max Min Nom Max
A --- --- 0.071 --- --- 1.80
A1 0.001 0.003 0.005 0.02 0.07 0.13
b 0.026 0.030 0.033 0.66 0.75 0.84
b1 0.114 0.118 0.122 2.90 3.00 3.10
c 0.009 0.011 0.014 0.23 0.29 0.35
D 0.260 0.260 0.264 6.60 6.60 6.71
E0.130 0.138 0.146 3.30 3.50 3.70
e--- 0.091 --- --- 2.30 ---
e1 0.030 0.037 0.045 0.75 0.95 1. 15
L1 0.059 0.069 0.079 1.50 1.75 2.00
HE 0.268 0.276 0.283 6.80 7. 0 0 7.20
ø --- 10° --- 10°
Pin Assignment
1Main Terminal 1
2Main Terminal 2
3 Gate
4Main Terminal 2
Ordering Information
Device Package Shipping
Z0103MNT1G SOT-223
(Pb-Free)
1000 /
Tape & Reel
Z0107MNT1G SOT-223
(Pb-Free)
Z0109MNT1G SOT-223
(Pb-Free)
A1
b1
D
E
b
e
e1
4
12 3
0.08 (0003
)
A
L1
C
HE
L
1.5
0.059
mm
inches
SCALE 6:
1
3.8
0.15
2.0
0.079
6.3
0.248
2.3
0.091
2.3
0.091
2.0
0.079
SOT 223
CASE 318 E
STYLE 11
(Note: Microdot may be in either location
)
Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability
of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications.
Read complete Disclaimer Notice at: www.littelfuse.com/disclaimer-electronics
10XMN
YMAXX
10XMN =Device Code
x =3, 7, and 9
Y =Year
M =Month
A =Assembly Site
XX =Lot Serial Code
G =Pb-Free Package