IKB03N120H2 HighSpeed 2-Technology with soft, fast recovery anti-parallel EmCon HE diode C * * * * * Designed for: - SMPS - Lamp Ballast - ZVS-Converter G E nd 2 generation HighSpeed-Technology for 1200V applications offers: - loss reduction in resonant circuits - temperature stable behavior - parallel switching capability - tight parameter distribution - Eoff optimized for IC =3A P-TO-220-3-45 2 Qualified according to JEDEC for target applications Pb-free lead plating; RoHS compliant Complete product spectrum and PSpice Models : http://www.infineon.com/igbt/ Type VCE IC Eoff Tj Marking Package 1200V 3A 0.15mJ 150C K03H1202 P-TO-220-3-45 Parameter Symbol Value Unit Collector-emitter voltage VCE 1200 V Triangular collector current IC IKB03N120H2 Maximum Ratings A TC = 25C, f = 140kHz 9.6 TC = 100C, f = 140kHz 3.9 Pulsed collector current, tp limited by Tjmax ICpul s 9.9 Turn off safe operating area - 9.9 VCE 1200V, Tj 150C IF Diode forward current TC = 25C 9.6 TC = 100C 3.9 Gate-emitter voltage VGE 20 V Power dissipation Ptot 62.5 W -40...+150 C TC = 25C Operating junction and storage temperature Tj , Tstg Soldering temperature (reflow soldering, MSL1) - 2 220 J-STD-020 and JESD-022 Power Semiconductors 1 http://store.iiic.cc/ Rev. 2.3 May 06 IKB03N120H2 Thermal Resistance Parameter Symbol Conditions Max. Value Unit RthJC 2.0 K/W RthJCD 3.2 RthJA 40 Characteristic IGBT thermal resistance, junction - case Diode thermal resistance, junction - case Thermal resistance, junction - ambient 1) Electrical Characteristic, at Tj = 25 C, unless otherwise specified Parameter Symbol Conditions Value min. Typ. max. 1200 - - T j =2 5 C - 2.2 2.8 T j =1 5 0 C - 2.5 - V G E = 10 V , I C = 3 A, T j =2 5 C - 2.4 - T j =2 5 C - 2.0 2.5 T j =1 5 0 C - 1.75 - 2.1 3 3.9 Unit Static Characteristic Collector-emitter breakdown voltage V ( B R ) C E S V G E = 0V , I C = 3 00 A Collector-emitter saturation voltage VCE(sat) Diode forward voltage V V G E = 15 V , I C = 3 A V G E = 0, I F = 2 A VF Gate-emitter threshold voltage VGE(th) I C = 90 A , V C E = V G E Zero gate voltage collector current ICES V C E = 12 0 0V , V G E = 0V A T j =2 5 C - - 20 T j =1 5 0 C - - 80 Gate-emitter leakage current IGES V C E = 0V , V G E =2 0 V - - 100 nA Transconductance gfs V C E = 20 V , I C = 3 A - 2 - S Input capacitance Ciss V C E = 25 V , - 205 - pF Output capacitance Coss V G E = 0V , - 24 - Reverse transfer capacitance Crss f= 1 MH z - 7 - Gate charge QGate V C C = 96 0 V, I C =3 A - 22 - nC - 7 - nH Dynamic Characteristic V G E = 15 V Internal emitter inductance LE measured 5mm (0.197 in.) from case 1) 2 Device on 50mm*50mm*1.5mm epoxy PCB FR4 with 6cm (one layer, 70m thick) copper area for collector connection. PCB is vertical without blown air. Power Semiconductors 2 http://store.iiic.cc/ Rev. 2.3 May 06 IKB03N120H2 Switching Characteristic, Inductive Load, at Tj=25 C Parameter Symbol Conditions Value min. typ. max. - 9.2 - - 5.2 - - 281 - - 29 - Unit IGBT Characteristic Turn-on delay time td(on) Rise time tr Turn-off delay time td(off) Fall time tf Turn-on energy Eon Turn-off energy Eoff Total switching energy Ets T j =2 5 C , V C C = 80 0 V, I C = 3 A, V G E = 15 V /0 V , R G = 82 , 2) L =1 8 0n H, 2) C = 4 0p F Energy losses include 4) "tail" and diode reverse recovery. - 0.14 - - 0.15 - - 0.29 - ns mJ Anti-Parallel Diode Characteristic Diode reverse recovery time trr T j =2 5 C , - 42 - ns Diode reverse recovery charge Qrr V R = 8 00 V , I F = 3 A, - 0.23 - C Diode peak reverse recovery current Irrm R G = 82 - 10.3 - A Diode current slope diF/dt - 993 - A/s Diode peak rate of fall of reverse recovery current during t b d i r r /d t - 1180 - Switching Characteristic, Inductive Load, at Tj=150 C Parameter Symbol Conditions Value min. typ. max. - 9.4 - - 6.7 - - 340 - - 63 - - 0.22 - - 0.26 - - 0.48 - Unit IGBT Characteristic Turn-on delay time td(on) Rise time tr Turn-off delay time td(off) Fall time tf Turn-on energy Eon Turn-off energy Eoff Total switching energy Ets T j =1 5 0 C V C C = 80 0 V, I C = 3 A, V G E = 15 V /0 V , R G = 82 , 2) L =1 8 0n H, 2) C = 4 0p F Energy losses include 3) "tail" and diode reverse recovery. ns mJ Anti-Parallel Diode Characteristic Diode reverse recovery time trr T j =1 5 0 C - 125 - ns Diode reverse recovery charge Qrr V R = 8 00 V , I F = 3 A, - 0.51 - C Diode peak reverse recovery current Irrm R G = 82 - 12 - A Diode current slope diF/dt - 829 - A/s Diode peak rate of fall of reverse recovery current during t b d i r r /d t - 540 - 2) 4) Leakage inductance L and stray capacity C due to dynamic test circuit in figure E Commutation diode from device IKP03N120H2 Power Semiconductors 3 http://store.iiic.cc/ Rev. 2.3 May 06 IKB03N120H2 Switching Energy ZVT, Inductive Load Parameter Symbol Conditions Value min. typ. max. Unit IGBT Characteristic Turn-off energy Eoff V C C = 80 0 V, mJ I C = 3 A, V G E = 15 V /0 V , R G = 82 , 2) C r =4 nF Power Semiconductors T j =2 5 C - 0.05 - T j =1 5 0 C - 0.09 - 4 http://store.iiic.cc/ Rev. 2.3 May 06 IKB03N120H2 Ic 12A t p =1 s 10A 5 s IC, COLLECTOR CURRENT IC, COLLECTOR CURRENT 10A 8A TC=80C 6A TC=110C 4A 2A 0A 10Hz Ic 100Hz 10 s 1A 50 s 100 s 0,1A 500 s DC 1kHz 10kHz 100kHz 0,01A f, SWITCHING FREQUENCY Figure 1. Collector current as a function of switching frequency (Tj 150C, D = 0.5, VCE = 800V, VGE = +15V/0V, RG = 82) 1V 10V 100V 1000V VCE, COLLECTOR-EMITTER VOLTAGE Figure 2. Safe operating area (D = 0, TC = 25C, Tj 150C) 12A 60W 10A IC, COLLECTOR CURRENT Ptot, POWER DISSIPATION 50W 40W 30W 20W 10W 0W 25C 50C 75C 100C 6A 4A 2A 0A 25C 125C TC, CASE TEMPERATURE Figure 3. Power dissipation as a function of case temperature (Tj 150C) Power Semiconductors 8A 50C 75C 100C 125C 150C TC, CASE TEMPERATURE Figure 4. Collector current as a function of case temperature (VGE 15V, Tj 150C) 5 http://store.iiic.cc/ Rev. 2.3 May 06 IKB03N120H2 10A 10A 9A 8A IC, COLLECTOR CURRENT IC, COLLECTOR CURRENT 8A VGE=15V 6A 12V 10V 8V 6V 4A 2A 7A 6A 5A VGE=15V 12V 10V 8V 6V 4A 3A 2A 1A 0A 0V 1V 2V 3V 4V 0A 0V 5V 12A IC, COLLECTOR CURRENT 10A 8A 6A Tj=+150C Tj=+25C 4A 2A 0A 3V 5V 7V 9V VGE, GATE-EMITTER VOLTAGE Figure 7. Typical transfer characteristics (VCE = 20V) Power Semiconductors 2V 3V 4V 5V VCE, COLLECTOR-EMITTER VOLTAGE Figure 6. Typical output characteristics (Tj = 150C) VCE(sat), COLLECTOR-EMITTER SATURATION VOLTAGE VCE, COLLECTOR-EMITTER VOLTAGE Figure 5. Typical output characteristics (Tj = 25C) 1V IC=6A 3V IC=3A 2V IC=1.5A 1V 0V -50C 0C 50C 100C Tj, JUNCTION TEMPERATURE Figure 8. Typical collector-emitter saturation voltage as a function of junction temperature (VGE = 15V) 6 http://store.iiic.cc/ Rev. 2.3 May 06 IKB03N120H2 1000ns 1000ns td(off) 100ns t, SWITCHING TIMES t, SWITCHING TIMES td(off) tf td(on) 10ns 100ns tf td(on) 10ns tr tr 1ns 0A 2A 1ns 4A IC, COLLECTOR CURRENT Figure 9. Typical switching times as a function of collector current (inductive load, Tj = 150C, VCE = 800V, VGE = +15V/0V, RG = 82, dynamic test circuit in Fig.E) 100ns tf td(on) tr 50C 75C 100C 125C 150C Tj, JUNCTION TEMPERATURE Figure 11. Typical switching times as a function of junction temperature (inductive load, VCE = 800V, VGE = +15V/0V, IC = 3A, RG = 82, dynamic test circuit in Fig.E) Power Semiconductors VGE(th), GATE-EMITTER THRESHOLD VOLTAGE t, SWITCHING TIMES 100 150 5V td(off) 1ns 25C 50 RG, GATE RESISTOR Figure 10. Typical switching times as a function of gate resistor (inductive load, Tj = 150C, VCE = 800V, VGE = +15V/0V, IC = 3A, dynamic test circuit in Fig.E) 1000ns 10ns 0 4V max. 3V typ. 2V min. 1V 0V -50C 0C 50C 100C 150C Tj, JUNCTION TEMPERATURE Figure 12. Gate-emitter threshold voltage as a function of junction temperature (IC = 0.09mA) 7 http://store.iiic.cc/ Rev. 2.3 May 06 IKB03N120H2 1.0mJ 1 1 Ets 0.7mJ 1 E, SWITCHING ENERGY LOSSES E, SWITCHING ENERGY LOSSES ) Eon and Ets include losses due to diode recovery. Eoff 0.5mJ 1 Eon 0.4mJ 0.3mJ 1 E, SWITCHING ENERGY LOSSES ) Eon and Ets include losses due to diode recovery. Ets 1 0.4mJ 0.3mJ Eoff 1 Eon 0.2mJ 0.1mJ 25C 80C 125C 150C Tj, JUNCTION TEMPERATURE Figure 15. Typical switching energy losses as a function of junction temperature (inductive load, VCE = 800V, VGE = +15V/0V, IC = 3A, RG = 82, dynamic test circuit in Fig.E ) Power Semiconductors 1 Eon 50 100 150 200 250 RG, GATE RESISTOR Figure 14. Typical switching energy losses as a function of gate resistor (inductive load, Tj = 150C, VCE = 800V, VGE = +15V/0V, IC = 3A, dynamic test circuit in Fig.E ) Eoff, TURN OFF SWITCHING ENERGY LOSS 0.5mJ Eoff 0 4A IC, COLLECTOR CURRENT Figure 13. Typical switching energy losses as a function of collector current (inductive load, Tj = 150C, VCE = 800V, VGE = +15V/0V, RG = 82, dynamic test circuit in Fig.E ) 1 0.5mJ 0.0mJ 2A Ets 0.6mJ 0.2mJ 0A ) Eon and Ets include losses due to diode recovery. IC=3A, TJ=150C 0.16mJ 0.12mJ IC=3A, TJ=25C 0.08mJ IC=1A, TJ=150C 0.04mJ IC=1A, TJ=25C 0.00mJ 0V/us 1000V/us 2000V/us 3000V/us dv/dt, VOLTAGE SLOPE Figure 16. Typical turn off switching energy loss for soft switching (dynamic test circuit in Fig. E) 8 http://store.iiic.cc/ Rev. 2.3 May 06 IKB03N120H2 20V D=0.5 0 VGE, GATE-EMITTER VOLTAGE VGE, GATE-EMITTER VOLTAGE 10 K/W 0.2 0.1 0.05 -1 10 K/W R,(K/W) 1.082517 0.328671 0.588811 0.02 0.01 , (s) 0.000795 0.000179 0.004631 R1 R2 -2 10 K/W single pulse 1s 10s C 1 = 1 / R 1 C 2 = 2 /R 2 100s 1ms 10ms 15V UCE=240V 10V UCE=960V 5V 0V 0nC 100ms QGE, GATE CHARGE Figure 17. Typical gate charge (IC = 3A) 10nC 20nC 30nC QGE, GATE CHARGE Figure 17. Typical gate charge (IC = 3A) 1000V 1nF 100pF Coss 10pF Crss 800V 2A 600V 400V 1A 200V 0A 0V 0V 10V 20V 0.0 30V VCE, COLLECTOR-EMITTER VOLTAGE Figure 18. Typical capacitance as a function of collector-emitter voltage (VGE = 0V, f = 1MHz) Power Semiconductors ICE COLLECTOR CURRENT C, CAPACITANCE Ciss VCE, COLLECTOR-EMITTER VOLTAGE 3A 0.2 0.4 0.6 0.8 1.0 1.2 tp, PULSE WIDTH Figure 20. Typical turn off behavior, hard switching (VGE=15/0V, RG=82, Tj = 150C, Dynamic test circuit in Figure E) 9 http://store.iiic.cc/ Rev. 2.3 May 06 IKB03N120H2 2A 400V 1A 200V 0A 0V 0.0 0.4 0.8 1.2 1.6 2.0 2.4 ZthJC, TRANSIENT THERMAL RESISTANCE VGE, GATE-EMITTER VOLTAGE 600V ICE COLLECTOR CURRENT 3A 800V 2.8 tp, PULSE WIDTH 0.2 0.1 0.05 0.02 -1 10 K/W 0.01 R,(K/W) 1.9222 0.5852 0.7168 , (s) 7.04E-04 2.02E-04 4.39E-03 single pulse R 1 R2 C1=1/R 1 C 2= 2/R 2 1ms 10ms -2 10 K/W 10s 100s 0.6uC 180ns Qrr, REVERSE RECOVERY CHARGE 160ns trr, REVERSE RECOVERY TIME 0 10 K/W tP, PULSE WIDTH Figure 22. Diode transient thermal impedance as a function of pulse width (D=tP/T) Figure 21. Typical turn off behavior, soft switching (VGE=15/0V, RG=82, Tj = 150C, Dynamic test circuit in Figure E) TJ=150C 140ns 120ns 100ns 80ns 60ns TJ=25C 40ns 0Ohm D=0.5 100Ohm 200Ohm 300Ohm RG, GATE RESISTANCE Figure 23. Typical reverse recovery time as a function of diode current slope VR=800V, IF=3A, Dynamic test circuit in Figure E) Power Semiconductors TJ=150C 0.5uC 0.4uC 0.3uC TJ=25C 0.2uC 0Ohm 100Ohm 200Ohm 300Ohm RG, GATE RESISTANCE Figure 24. Typical reverse recovery charge as a function of diode current slope (VR=800V, IF=3A, Dynamic test circuit in Figure E) 10 http://store.iiic.cc/ Rev. 2.3 May 06 IKB03N120H2 16A dirr/dt, DIODE PEAK RATE OF FALL OF REVERSE RECOVERY CURRENT Irr, REVERSE RECOVERY CURRENT -600A/us 14A 12A T J =150C 10A T J =25C 8A 0O hm 100O hm 200O hm TJ=150C -800A/us -1000A/us -1200A/us TJ=25C -1400A/us -1600A/us -1800A/us 0Ohm 300O hm RG, GATE RESISTANCE Figure 25. Typical reverse recovery current as a function of diode current slope (VR=800V, IF=3A, Dynamic test circuit in Figure E) 100Ohm 200Ohm 300Ohm RG, GATE RESISTANCE Figure 26. Typical diode peak rate of fall of reverse recovery current as a function of diode current slope (VR=800V, IF=3A, Dynamic test circuit in Figure E) 3.0V IF=4A T J =150C 2.5V VF, FORWARD VOLTAGE IF, FORWARD CURRENT 4A 2A T J =25C 0A 0V IF=2A IF=1A 2.0V 1.5V 1.0V 1V 2V VF, FORWARD VOLTAGE Figure 27. Typical diode forward current as a function of forward voltage Power Semiconductors -50C 3V 0C 50C 100C 150C TJ, JUNCTION TEMPERATURE Figure 28. Typical diode forward voltage as a function of junction temperature 11 http://store.iiic.cc/ Rev. 2.3 May 06 IKB03N120H2 P-TO220-3-45 Power Semiconductors 12 http://store.iiic.cc/ Rev. 2.3 May 06 IKB03N120H2 i,v tr r =tS +tF diF /dt Qr r =QS +QF IF tS QS Ir r m tr r tF 10% Ir r m QF dir r /dt 90% Ir r m t VR Figure C. Definition of diodes switching characteristics 1 2 r1 n r2 rn Tj (t) p(t) r2 r1 rn Figure A. Definition of switching times TC Figure D. Thermal equivalent circuit 1/2 L oo DUT (Diode) L C Cr VDC RG DUT (IGBT) 1/2 L Figure E. Dynamic test circuit Leakage inductance L = 180nH, Stray capacitor C = 40pF, Relief capacitor Cr = 4nF (only for ZVT switching) Figure B. Definition of switching losses Power Semiconductors 13 http://store.iiic.cc/ Rev. 2.3 May 06 IKB03N120H2 Edition 2006-01 Published by Infineon Technologies AG 81726 Munchen, Germany (c) Infineon Technologies AG 11/3/06. All Rights Reserved. Attention please! The information given in this data sheet shall in no event be regarded as a guarantee of conditions or characteristics ("Beschaffenheitsgarantie"). With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office (www.infineon.com). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Power Semiconductors 14 http://store.iiic.cc/ Rev. 2.3 May 06