2SC1213A(K) Silicon NPN Epitaxial REJ03G0685-0200 (Previous ADE-208-1049) Rev.2.00 Aug.10.2005 Application * Low frequency amplifier * Medium speed switching Outline RENESAS Package code: PRSS0003DA-A (Package name: TO-92 (1)) 1. Emitter 2. Collector 3. Base 3 2 1 Absolute Maximum Ratings (Ta = 25C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector power dissipation Junction temperature Storage temperature Rev.2.00 Aug 10, 2005 page 1 of 6 Symbol VCBO VCEO VEBO IC PC Tj Ratings 50 50 4 500 400 150 Unit V V V mA mW C Tstg -55 to +150 C 2SC1213A(K) Electrical Characteristics (Ta = 25C) Item Collector to base breakdown voltage Collector to emitter breakdown voltage Emitter to base breakdown voltage Collector cutoff current DC current transfer ratio Base to emitter voltage Collector to emitter saturation voltage Base to emitter satruation voltage Collector output capacitance Gain bandwidth product Turn on time Turn off time Storage time Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO hFE*1 hFE VBE VCE(sat) VBE(sat) Cob fT ton Min 50 50 4 -- 100 10 -- -- -- -- -- Typ -- -- -- -- -- -- 0.64 0.12 0.83 7.0 120 0.25 Max -- -- -- 0.5 320 -- -- 0.6 1.2 -- -- -- toff tstg V V V pF MHz S -- -- 0.85 0.4 -- -- S S Notes: 1. The 2SC1213A(K) is grouped by hFE as follows. 2. Pulse test C D 100 to 200 160 to 320 Rev.2.00 Aug 10, 2005 page 2 of 6 Unit V V V A Test conditions IC = 10 A, IE = 0 IC = 1.0 mA, RBE = IE = 10 A, IC = 0 VCB = 20 V, IE = 0 VCE = 3 V, IC = 10 mA VCE = 3 V, IC = 500 mA*2 VCE = 3 V, IC = 10 mA IC = 150 mA, IB = 15 mA*2 IC = 150 mA, IB = 15 mA*2 VCB = 10 V, IE = 0, f = 1 MHz VCE = 3 V, IC = 10 mA VCC = 10.3 V IC = 10 IB1 = -10 IB2 = 10 mA VCC = 5 V IC = IB1 = -IB2 = 20 mA 2SC1213A(K) Main Characteristics Switching Time Test Circuit Switching Time Test Circuit tstg Test Circuit ton, toff Test Circuit 6k 50 0.002 - + 50 - + 50 200 100 10.3 V Unit R : C : F Response Waveform 13 V Input 0 Output 0 0.002 7V + - 50 240 0.002 - + 50 5V Unit R : C:F 0 Input 9V 10% td 90% 10% Rev.2.00 Aug 10, 2005 page 3 of 6 P.G. tr 5 ns PW 5 s duty ratio 2% Response Waveform 90% ton CRT 1.0 215 1k 6k 0.002 P.G. -6 V tr, tf 15 ns PW 5 s duty ratio 10% D.U.T. CRT D.U.T. 90% toff Output 0 10% 10% tstg 2SC1213A(K) Maximum Collector Dissipation Curve Typical Output Characteristics (1) 40 30 20 10 8 6 5 4 Collector Current IC (mA) 500 400 300 200 100 400 300 3 2 200 1 mA 100 100 50 0 150 1 4 5 Collector to Emitter Voltage VCE (V) Typical Output Characteristics (2) Typical Transfer Characteristics 30 0.6 60 0.5 0.4 40 0.3 0.2 0.1 mA IB = 0 20 10 0 20 PC = 400 mW 30 40 VCE = 3 V 10 3 1.0 0.3 50 0 Collector to Emitter Voltage VCE (V) DC Current Transfer Ratio hFE 75 50 1.0 0.6 0.8 1.0 1.2 140 100 3 0.4 DC Current Transfer Ratio vs. Collector Current 30 10 0.2 Base to Emitter Voltage VBE (V) Collector Cutoff Current vs. Collector to Base Voltage 100 Ta = 75C 0.7 Collector Current IC (mA) 0.8 80 Ta = 25C 0.3 0.1 0.03 3 2 Ambient Temperature Ta (C) 0.9 Collector Current IC (mA) W IB = 0 0 100 Collector Current ICBO (nA) PC = 400 m 25 -25 Collector Power Dissipation PC (mW) 500 VCE = 3 V 120 100 75 50 80 25 0 60 Ta =- C 25 40 20 0 0 10 20 30 40 50 Collector to Base Voltage VCB (V) Rev.2.00 Aug 10, 2005 page 4 of 6 2 5 10 20 50 100 200 Collector Current IC (mA) 500 Collector to Emitter Saturation Voltage vs. Collector Current 0.32 IC = 10 IB 0.28 0.24 0.20 0.16 0.12 0.08 0.04 0 0.1 0.3 1.0 10 3 30 100 300 1,000 Collector Current IC (mA) Base to Emitter Saturation Voltage VBE(sat) (V) Collector to Emitter Saturation Voltage VCE(sat) (V) 2SC1213A(K) Base to Emitter Saturation Voltage vs. Collector Current 1.1 IC = 10 IB Pulse 1.0 0.9 0.8 0.5 -25 0 25 50 C 5 =7 a T 0.4 0.1 0.2 0.5 1.0 2 0.7 0.6 Gain Bandwidth Product vs. Collector Current 60 50 Cib(IC = 0) 40 30 20 Cob(IE = 0) 10 0 0.1 0.3 1.0 10 3 30 Collector to Base Voltage VCB (V) Emitter to Base Voltage VEB (V) Switching Time vs. Collector Current 1,000 Switching Time t (ns) Gain Bandwidth Product fT (MHz) Collector Output Capacitance Cob (pF) Emitter input Capacitance Cib (pF) f = 1 MHz toff 500 tstg 200 100 50 ton 20 VCC = 10.3 V IC = 10 IB1 = -10 IB2 td 10 5 10 20 50 100 200 Collector Current IC (mA) Rev.2.00 Aug 10, 2005 page 5 of 6 500 50 100 200 500 Collector Current IC (mA) Input And Output Capacitance vs. Voltage 70 5 10 20 280 VCE = 3 V 240 200 160 120 80 40 0 2 5 10 20 50 100 200 Collector Current IC (mA) 500 2SC1213A(K) Package Dimensions JEITA Package Code RENESAS Code SC-43A PRSS0003DA-A Package Name MASS[Typ.] TO-92(1) / TO-92(1)V Unit: mm 0.25g 4.8 0.3 2.3 Max 0.7 0.60 Max 0.55 Max 12.7 Min 5.0 0.2 3.8 0.3 0.5 Max 1.27 2.54 Ordering Information Part Name 2SC1213AKCTZ-E Quantity 2500 Shipping Container Hold Box, Radial Taping Note: For some grades, production may be terminated. Please contact the Renesas sales office to check the state of production before ordering the product. Rev.2.00 Aug 10, 2005 page 6 of 6 Sales Strategic Planning Div. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan Keep safety first in your circuit designs! 1. Renesas Technology Corp. puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of nonflammable material or (iii) prevention against any malfunction or mishap. Notes regarding these materials 1. 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