1. Product profile
1.1 General description
A 600 W LDMOS RF power transistor for broadcast transmitter applications and industrial
applications. The excellent ruggedness of this device makes it ideal for digital and analog
transmitter applications.
[1] Measured at = 10 %; tp = 100 s.
[2] Measured [dBc] with delta marker at 4.3 MHz from center frequency.
[3] PAR (of output signal) at 0.01 % probability on CCDF; PAR of input signal = 9.5 dB at 0.01 % probability on CCDF.
1.2 Features and benefits
Excellent ruggedness (VSWR 40 : 1 through all phases)
Optimum thermal behavior and reliability, Rth(j-c) = 0.15 K/W
Suitable for CW UHF and ISM applications
High power gain
High efficiency
Designed for broadband operation (470 MHz to 860 MHz)
Internal input matching for high gain and optimum broadband operation
Excellent reliability
Easy power control
Compliant to Restriction of Hazardous Substances (RoHS) Directive 2002/95/EC
BLF888A; BLF888AS
UHF power LDMOS transistor
Rev. 6 — 1 September 2015 Product data sheet
Table 1. Application information
RF performance at VDS = 50 V unless otherwise specified.
Mode of operation f PL(AV) PL(M) GpDIMD3 IMDshldr PAR
(MHz) (W) (W) (dB) (%) (dBc) (dBc) (dB)
RF performance in a common source narrowband test circuit
CW 650 - 600 20 67 - - -
CW (42 V) 650 - 500 20 69 - - -
2-tone, class-AB f1 = 860; f2= 860.1 250 - 21 46 32 - -
pulsed, class-AB [1] 860 - 600 20 58 - - -
DVB-T (8k OFDM) 858 110 - 21 31 - 32 [2] 8.2 [3]
858 125 - 21 32.5 - 30 [2] 8.0 [3]
RF performance in a common source 470 MHz to 860 MHz broadband test circuit
DVB-T (8k OFDM) 858 110 - 20 30 - 32 [2] 8.0 [3]
858 120 - 20 31 - 31 [2] 7.8 [3]
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Product data sheet Rev. 6 — 1 September 2015 2 of 17
BLF888A; BLF888AS
UHF power LDMOS transistor
1.3 Applications
Communication transmitter applications in the UHF band
Industrial applications in the UHF band
2. Pinning information
[1] Connected to flange.
3. Ordering information
Table 2. Pinning
Pin Description Simplified outline Graphic symbol
BLF888A (SOT539A)
1drain1
2drain2
3gate1
4gate2
5source [1]
BLF888AS (SOT539B)
1drain1
2drain2
3gate1
4gate2
5source [1]
5
12
43
4
35
1
2sym117
5
12
43
4
35
1
2sym117
Table 3. Ordering information
Type number Package
Name Description Version
BLF888A - flanged balanced ceramic package;
2 mounting holes; 4 leads
SOT539A
BLF888AS - earless flanged balanced ceramic package;
4 leads
SOT539B
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Product data sheet Rev. 6 — 1 September 2015 3 of 17
BLF888A; BLF888AS
UHF power LDMOS transistor
4. Limiting values
[1] Continuous use at maximum temperature will affect the reliability, for details refer to the on-line MTF
calculator.
5. Thermal characteristics
[1] Rth(j-c) is measured under RF conditions.
6. Characteristics
[1] ID is the drain current.
[2] Capacitance values without internal matching.
Table 4. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
VDS drain-source voltage - 110 V
VGS gate-source voltage 0.5 +11 V
Tstg storage temperature 65 +150 C
Tjjunction temperature [1] - 225 C
Table 5. Thermal characteristics
Symbol Parameter Conditions Typ Unit
Rth(j-c) thermal resistance from junction to case Tcase =80C; PL(AV) =125W [1] 0.15 K/W
Table 6. DC characteristics
Tj=25
C; per section unless otherwise specified.
Symbol Parameter Conditions Min Typ Max Unit
V(BR)DSS drain-source breakdown voltage VGS =0V; I
D= 2.4 mA [1] 110 - - V
VGS(th) gate-source threshold voltage VDS =10 V; I
D= 240 mA [1] 1.4 1.9 2.4 V
IDSS drain leakage current VGS =0V; V
DS =50V - - 2.8 A
IDSX drain cut-off current VGS =V
GS(th) +3.75 V;
VDS =10V
-36- A
IGSS gate leakage current VGS =10V; V
DS = 0 V - - 280 nA
RDS(on) drain-source on-state resistance VGS =V
GS(th) +3.75 V;
ID=8.5A
[1] -143- m
Ciss input capacitance VGS = 0 V; VDS =50V;
f=1MHz
[2] -220- pF
Coss output capacitance VGS = 0 V; VDS =50V;
f=1MHz
-74- pF
Crss reverse transfer capacitance VGS = 0 V; VDS =50V;
f=1MHz
-1.2- pF
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Product data sheet Rev. 6 — 1 September 2015 4 of 17
BLF888A; BLF888AS
UHF power LDMOS transistor
[1] IDq for total device.
[2] Measured [dBc] with delta marker at 4.3 MHz from center frequency.
[3] PAR (of output signal) at 0.01 % probability on CCDF; PAR of input signal = 9.5 dB at 0.01 % probability on
CCDF.
Table 7. RF characteristics
RF characteristics in Ampleon production narrowband test circuit; Tcase =25
C unless otherwise
specified.
Symbol Parameter Conditions Min Typ Max Unit
2-Tone, class-AB
VDS drain-source voltage - 50 - V
IDq quiescent drain current [1] -1.3- A
PL(AV) average output power f1= 860 MHz;
f2=860.1MHz
250 - - W
Gppower gain f1= 860 MHz;
f2=860.1MHz
20 21 - dB
Ddrain efficiency f1= 860 MHz;
f2=860.1MHz
42 46 - %
IMD3 third-order intermodulation distortion f1= 860 MHz;
f2=860.1MHz
-32 28 dBc
DVB-T (8k OFDM), class-AB
VDS drain-source voltage - 50 - V
IDq quiescent drain current [1] -1.3- A
PL(AV) average output power f = 858 MHz 110 - - W
Gppower gain f = 858 MHz 20 21 - dB
Ddrain efficiency f = 858 MHz 28 31 - %
IMDshldr intermodulation distortion shoulder f = 858 MHz [2] -32 28 dBc
PAR peak-to-average ratio f = 858 MHz [3] -8.2- dB
VGS = 0 V; f = 1 MHz.
Fig 1. Output capacitance as a function of drain-source voltage; typical values per
section
001aam579
VDS (V)
0604020
200
100
300
400
Coss
(pF)
0
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Product data sheet Rev. 6 — 1 September 2015 5 of 17
BLF888A; BLF888AS
UHF power LDMOS transistor
6.1 Ruggedness in class-AB operation
The BLF888A and BLF888AS are capable of withstanding a load mismatch corresponding
to VSWR 40 : 1 through all phases under the following conditions: VDS =50V;
f = 860 MHz at rated power.
7. Application information
7.1 Narrowband RF figures
7.1.1 2-Tone
VDS = 50 V; IDq = 1.3 A; measured in a common source
narrowband 860 MHz test circuit.
VDS = 50 V; IDq = 1.3 A; measured in a common source
narrowband 860 MHz test circuit.
Fig 2. 2-Tone power gain and drain efficiency as
function of load power; typical values
Fig 3. 2-Tone power gain and third order
intermodulation distortion as load power;
typical values
PL(AV) (W)
0 500400200 300100
001aan761
16
20
24
Gp
(dB)
ηD
(%)
12
20
40
60
0
Gp
ηD
PL(AV) (W)
0 500400200 300100
001aan762
16
20
24
Gp
(dB)
IMD3
(dBc)
12
-40
-20
0
-60
Gp
IMD3
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Product data sheet Rev. 6 — 1 September 2015 6 of 17
BLF888A; BLF888AS
UHF power LDMOS transistor
7.1.2 DVB-T
7.2 Broadband RF figures
7.2.1 DVB-T
VDS = 50 V; IDq = 1.3 A; measured in a common source
narrowband 860 MHz test circuit.
VDS = 50 V; IDq = 1.3 A; measured in a common source
narrowband 860 MHz test circuit.
Fig 4. DVB-T power gain and intermodulation
distortion shoulder as function of load power;
typical values
Fig 5. DVB-T peak-to-average ratio and drain
efficiency as function of load power;
typical values
PL(AV) (W)
0 100 200 300 35025015050
001aam582
16
20
24
Gp
(dB)
12
18
22
14
IMDshldr
(dBc)
−40
−20
0
−60
−30
−10
−50
Gp
IMDshldr
PL(AV) (W)
0 100 200 300 35025015050
001aam583
4
8
12
PAR
(dB)
0
6
10
2
ηD
(%)
20
40
60
0
30
50
10
PAR
ηD
PL(AV) = 110 W; VDS = 50 V; IDq = 1.3 A; measured in a
common source broadband test circuit as described in
Section 8.
PL(AV) = 110 W; VDS = 50 V; IDq = 1.3 A; measured in a
common source broadband test circuit as described in
Section 8.
Fig 6. DVB-T power gain and intermodulation
distortion shoulder as a function of frequency;
typical values
Fig 7. DVB-T peak-to-average ratio and drain
efficiency as function of frequency;
typical values
f (MHz)
400 900800600 700500
001aam585
16
12
20
24
Gp
(dB) IMDshldr
(dBc)
8
−30
−40
−20
−10
−50
Gp
IMDshldr
f (MHz)
400 900800600 700500
001aam584
7.5
6.5
8.5
9.5
PAR
(dB) ηD
(%)
5.5
30
20
40
50
10
ηD
PAR
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Product data sheet Rev. 6 — 1 September 2015 7 of 17
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UHF power LDMOS transistor
7.3 Impedance information
Fig 8. Definition of transistor impedance
Table 8. Typical push-pull impedance
Simulated Zi and ZL device impedance; impedance info at VDS = 50 V and PL(AV) = 110 W (DVB-T).
f ZiZL
MHz
300 0.617 j1.715 4.989 + j1.365
325 0.635 j1.355 4.867 + j1.424
350 0.655 j1.026 4.741 + j1.472
375 0.677 j0.721 4.614 + j1.511
400 0.702 j0.435 4.486 + j1.540
425 0.731 j0.164 4.357 + j1.559
450 0.762 + j0.096 4.228 + j1.570
475 0.798 + j0.347 4.100 + j1.573
500 0.839 + j0.592 4.974 + j1.567
525 0.884 + j0.833 3.850 + j1.554
550 0.936 + j1.072 3.728 + j1.534
575 0.995 + j1.310 3.608 + j1.508
600 1.063 + j1.549 3.492 + j1.475
625 1.141 + j1.791 3.378 + j1.437
650 1.230 + j2.037 3.268 + j1.394
675 1.334 + j2.289 3.161 + j1.347
700 1.456 + j2.548 3.057 + j1.295
725 1.599 + j2.814 2.957 + j1.239
750 1.768 + j3.090 2.860 + j1.180
775 1.971 + j3.376 2.676 + j1.118
800 2.214 + j3.671 2.677 + j1.053
825 2.510 + j3.975 2.591 + j0.985
850 2.873 + j4.282 2.508 + j0.915
875 3.320 + j4.584 2.428 + j0.843
900 3.875 + j4.865 2.351 + j0.770
925 4.562 + j5.095 2.277 + j0.695
950 5.409 + j5.223 2.206 + j0.618
975 6.426 + j5.166 2.138 + j0.540
1000 7.587 + j4.807 2.073 + j0.461
001aan207
gate 1
gate 2
drain 2
drain 1
ZiZL
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Product data sheet Rev. 6 — 1 September 2015 8 of 17
BLF888A; BLF888AS
UHF power LDMOS transistor
7.4 Reliability
TTF (0.1 % failure fraction).
The reliability at pulsed conditions can be calculated as follows: TTF (0.1 %) 1 / .
(1) Tj = 100 C
(2) Tj = 110 C
(3) Tj = 120 C
(4) Tj = 130 C
(5) Tj = 140 C
(6) Tj = 150 C
(7) Tj = 160 C
(8) Tj = 170 C
(9) Tj = 180 C
(10) Tj = 190 C
(11) Tj = 200 C
Fig 9. BLF888A; BLF888AS electromigration (IDS(DC), total device)
001aam586
Years
103
10
102
106
105
104
107
1
IDS(DC) (A)
0 201684122 1810614
(1)
(2)
(3)
(4)
(5)
(6)
(7)
(8)
(9)
(10)
(11)
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Product data sheet Rev. 6 — 1 September 2015 9 of 17
BLF888A; BLF888AS
UHF power LDMOS transistor
8. Test information
[1] American technical ceramics type 800R or capacitor of same quality.
[2] American technical ceramics type 800B or capacitor of same quality.
[3] American technical ceramics type 180R or capacitor of same quality.
[4] American technical ceramics type 100A or capacitor of same quality.
[5] Printed-Circuit Board (PCB): Taconic RF35; r = 3.5 F/m; height = 0.762 mm; Cu (top/bottom metallization);
thickness copper plating = 35 m.
Table 9. List of components
For test circuit, see Figure 10, Figure 11 and Figure 12.
Component Description Value Remarks
B1, B2 semi rigid coax 25 ; 49.5 mm UT-090C-25 (EZ 90-25)
C1 multilayer ceramic chip capacitor 12 pF [1]
C2, C3, C4, C5,
C6
multilayer ceramic chip capacitor 8.2 pF [1]
C7 multilayer ceramic chip capacitor 6.8 pF [2]
C8 multilayer ceramic chip capacitor 2.7 pF [2]
C9 multilayer ceramic chip capacitor 2.2 pF [2]
C10, C13, C14 multilayer ceramic chip capacitor 100 pF [3]
C11, C12 multilayer ceramic chip capacitor 10 pF [2]
C15, C16 multilayer ceramic chip capacitor 4.7 F, 50 V Kemet C1210X475K5RAC-TU or
capacitor of same quality.
C17, C18, C23,
C24
multilayer ceramic chip capacitor 100 pF [2]
C19, C20 multilayer ceramic chip capacitor 10 F, 50 V TDK C570X7R1H106KT000N or
capacitor of same quality.
C21, C22 electrolytic capacitor 470 F; 63 V
C30 multilayer ceramic chip capacitor 10 pF [4]
C31 multilayer ceramic chip capacitor 9.1 pF [4]
C32 multilayer ceramic chip capacitor 3.9 pF [4]
C33, C34, C35 multilayer ceramic chip capacitor 100 pF [4]
C36, C37 multilayer ceramic chip capacitor 4.7 F, 50 V TDK C4532X7R1E475MT020U or
capacitor of same quality.
L1 microstrip - [5] (W L) 15 mm 13 mm
L2 microstrip - [5] (W L) 5 mm 26 mm
L3, L32 microstrip - [5] (W L) 2 mm 49.5 mm
L4 microstrip - [5] (W L) 1.7 mm 3.5 mm
L5 microstrip - [5] (W L) 2 mm 9.5 mm
L30 microstrip - [5] (W L) 5 mm 13 mm
L31 microstrip - [5] (W L) 2 mm 11 mm
L33 microstrip - [5] (W L) 2 mm 3 mm
R1, R2 wire resistor 10
R3, R4 SMD resistor 5.6 0805
R5, R6 wire resistor 100
R7, R8 potentiometer 10 k
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xxxxxxxxxxxxxxxxxxxxxxxxx xxxxxxxxxxxxxxxxxxxx xxx
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Product data sheet Rev. 6 — 1 September 2015 10 of 17
BLF888A; BLF888AS
UHF power LDMOS transistor
See Table 9 for a list of components.
Fig 10. Class-AB common source broadband amplifier; VD1(test), VD2(test), VG1(test) and VG2(test) are drain and gate test voltages
+VG1(test)
+VD1(test)
+VD2(test)
C32
C31 C30
C19
C20
C15
C10 50 Ω
50 Ω L4
C21
C22
C13
C16
C14
C9C7C6C4
C8C5
C3
C2
C1
+VG2(test)
L30 L1
L2
R1
L5
L31
C34
C36
C33
C37
L33
C35
L3
B1
R3
L32
B2
R4
R6
R8
R5
R7
C11
C12
C17
R2
C18
001aan763
C23
C24
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Product data sheet Rev. 6 — 1 September 2015 11 of 17
BLF888A; BLF888AS
UHF power LDMOS transistor
See Table 9 for a list of components.
Fig 11. Printed-Circuit Board (PCB) for class-AB common source amplifier
50 mm
001aam588
105 mm
L33
L32
L32
L31
L30
L30
L1
L5
L5
L1
L2
L2
L3
L3
L4
L31
See Table 9 for a list of components.
Fig 12. Component layout for class-AB common source amplifier
-
+
-
+
6.3 mm
4 mm
+VG2(test) +VD2(test)
+VD1(test)
+VG1(test)
001aan764
R8
R7
R6
C37
C35
C34 C32 C30
C31
C36
C17
C19
C11
C12
C7 C9
C8
C1
C2
C3
C4
C5
C6
C21
C23
C24
C22
C20
C18
R2
C15
C13
C14
C16
R1
C33
50 Ω
C10
50 Ω
R4
R3
R5
49.6 mm
36.8 mm
26.3 mm
25.3 mm
44 mm
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Product data sheet Rev. 6 — 1 September 2015 12 of 17
BLF888A; BLF888AS
UHF power LDMOS transistor
9. Package outline
Fig 13. Package outline SOT539A
REFERENCES
OUTLINE
VERSION
EUROPEAN
PROJECTION ISSUE DATE
IEC JEDEC EIAJ
SOT539A 12-05-02
10-02-02
0 5 10 mm
scale
p
A
F
b
e
D
U2
L
H
Q
c
5
12
43
D1
E
A
w1AB
M M M
q
U1
H1
C
B
M M
w2C
E1
M
w3
UNIT A
mm
Db
11.81
11.56
0.18
0.10
31.55
30.94 13.72 9.53
9.27
17.12
16.10
10.29
10.03
4.7
4.2
ce U2
0.250.25 0.51
w3
35.56
qw
2
w1
F
1.75
1.50
U1
41.28
41.02
H1
25.53
25.27
p
3.30
3.05
Q
2.26
2.01
EE
1
9.50
9.30
inches 0.465
0.455
0.007
0.004
1.242
1.218
D1
31.52
30.96
1.241
1.219 0.540 0.375
0.365
0.674
0.634
0.405
0.395
0.185
0.165 0.0100.010 0.0201.400
0.069
0.059
1.625
1.615
1.005
0.995
0.130
0.120
0.089
0.079
0.374
0.366
H
3.48
2.97
0.137
0.117
L
DIMENSIONS (millimetre dimensions are derived from the original inch dimensions)
Flanged balanced ceramic package; 2 mounting holes; 4 leads SOT539A
Note
1. millimeter dimensions are derived from the original inch dimensions.
2. recommended screw pitch dimension of 1.52 inch (38.6 mm) based on M3 screw.
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Product data sheet Rev. 6 — 1 September 2015 13 of 17
BLF888A; BLF888AS
UHF power LDMOS transistor
Fig 14. Package outline SOT539B
References
Outline
version
European
projection Issue date
IEC JEDEC JEITA
SOT539B
sot539b_po
12-05-02
13-05-24
Unit(1)
mm
max
nom
min
4.7
4.2
11.81
11.56
31.55
30.94
31.52
30.96
9.5
9.3
9.53
9.27
1.75
1.50
17.12
16.10
3.48
2.97
10.29
10.03
0.25
A
Dimensions
Earless flanged balanced ceramic package; 4 leads SOT539B
bc
0.18
0.10
DD
1EE
1e
13.72
FHH
1
25.53
25.27
LQ
2.26
2.01
U1
32.39
32.13
U2w2
0.25
inches
max
nom
min
0.185
0.165
0.465
0.455
1.242
1.218
1.241
1.219
0.374
0.366
0.375
0.365
0.069
0.059
0.674
0.634
0.137
0.117
0.405
0.395
0.01
0.007
0.004
0.54
1.005
0.995
0.089
0.079
1.275
1.265
0.01
w3
0 5 10 mm
scale
c
E
Q
E1
e
H
L
b
H1
U1
U2
Dw2
w3
1 2
3 4
D
D
A
F
D1
5
Note
1. millimeter dimensions are derived from the original inch dimensions.
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Product data sheet Rev. 6 — 1 September 2015 14 of 17
BLF888A; BLF888AS
UHF power LDMOS transistor
10. Handling information
11. Abbreviations
12. Revision history
CAUTION
This device is sensitive to ElectroStatic Discharge (ESD). Observe precautions for handling
electrostatic sensitive devices.
Such precautions are described in the ANSI/ESD S20.20, IEC/ST 61340-5, JESD625-A or
equivalent standards.
Table 10. Abbreviations
Acronym Description
CCDF Complementary Cumulative Distribution Function
CW Continuous Wave
DVB Digital Video Broadcast
DVB-T Digital Video Broadcast - Terrestrial
ISM Industrial, Scientific and Medical
LDMOS Laterally Diffused Metal-Oxide Semiconductor
MTF Median Time to Failure
OFDM Orthogonal Frequency Division Multiplexing
PAR Peak-to-Average power Ratio
SMD Surface Mounted Device
UHF Ultra High Frequency
VSWR Voltage Standing-Wave Ratio
Table 11. Revision history
Document ID Release date Data sheet status Change notice Supersedes
BLF888A_BLF888AS#6 20150901 Product data sheet - BLF888A_BLF888AS v.5
Modifications: •The format of this document has been redesigned to comply with the new identity
guidelines of Ampleon.
•Legal texts have been adapted to the new company name where appropriate.
BLF888A_BLF888AS v.5 20131104 Product data sheet - BLF888A_BLF888AS v.4
BLF888A_BLF888AS v.4 20130712 Product data sheet - BLF888A_BLF888AS v.3
BLF888A_BLF888AS v.3 20110830 Product data sheet - BLF888A_BLF888AS v.2
BLF888A_BLF888AS v.2 20110301 Preliminary data sheet - BLF888A_BLF888AS v.1
BLF888A_BLF888AS v.1 20100921 Objective data sheet - -
BLF888A_BLF888AS#6 All information provided in this document is subject to legal disclaimers. © Ampleon The Netherlands B.V. 2015. All rights reserved.
Product data sheet Rev. 6 — 1 September 2015 15 of 17
BLF888A; BLF888AS
UHF power LDMOS transistor
13. Legal information
13.1 Data sheet status
[1] Please consult the most recently issued document before initiating or completing a design.
[2] The term ‘short data sheet’ is explained in section “Definitions”.
[3] The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status
information is available on the Internet at URL http://www.ampleon.com.
13.2 Definitions
Draft — The document is a draft version only. The content is still under
internal review and subject to formal approval, which may result in
modifications or additions. Ampleon does not give any representations or
warranties as to the accuracy or completeness of information included herein
and shall have no liability for the consequences of use of such information.
Short data sheet — A short data sheet is an extract from a full data sheet
with the same product type number(s) and title. A short data sheet is intended
for quick reference only and should not be relied upon to contain detailed and
full information. For detailed and full information see the relevant full data
sheet, which is available on request via the local Ampleon sales office. In
case of any inconsistency or conflict with the short data sheet, the full data
sheet shall prevail.
Product specification — The information and data provided in a Product
data sheet shall define the specification of the product as agreed between
Ampleon and its customer, unless Ampleon and customer have explicitly
agreed otherwise in writing. In no event however, shall an agreement be valid
in which the Ampleon product is deemed to offer functions and qualities
beyond those described in the Product data sheet.
13.3 Disclaimers
Limited warranty and liability — Information in this document is believed to
be accurate and reliable. However, Ampleon does not give any
representations or warranties, expressed or implied, as to the accuracy or
completeness of such information and shall have no liability for the
consequences of use of such information. Ampleon takes no responsibility for
the content in this document if provided by an information source outside of
Ampleon.
In no event shall Ampleon be liable for any indirect, incidental, punitive,
special or consequential damages (including - without limitation - lost profits,
lost savings, business interruption, costs related to the removal or
replacement of any products or rework charges) whether or not such
damages are based on tort (including negligence), warranty, breach of
contract or any other legal theory.
Notwithstanding any damages that customer might incur for any reason
whatsoever, Ampleon’ aggregate and cumulative liability towards customer
for the products described herein shall be limited in accordance with the
Terms and conditions of commercial sale of Ampleon.
Right to make changes — Ampleon reserves the right to make changes to
information published in this document, including without limitation
specifications and product descriptions, at any time and without notice. This
document supersedes and replaces all information supplied prior to the
publication hereof.
Suitability for use — Ampleon products are not designed, authorized or
warranted to be suitable for use in life support, life-critical or safety-critical
systems or equipment, nor in applications where failure or malfunction of an
Ampleon product can reasonably be expected to result in personal injury,
death or severe property or environmental damage. Ampleon and its
suppliers accept no liability for inclusion and/or use of Ampleon products in
such equipment or applications and therefore such inclusion and/or use is at
the customer’s own risk.
Applications — Applications that are described herein for any of these
products are for illustrative purposes only. Ampleon makes no representation
or warranty that such applications will be suitable for the specified use without
further testing or modification.
Customers are responsible for the design and operation of their applications
and products using Ampleon products, and Ampleon accepts no liability for
any assistance with applications or customer product design. It is customer’s
sole responsibility to determine whether the Ampleon product is suitable and
fit for the customer’s applications and products planned, as well as for the
planned application and use of customer’s third party customer(s). Customers
should provide appropriate design and operating safeguards to minimize the
risks associated with their applications and products.
Ampleon does not accept any liability related to any default, damage, costs or
problem which is based on any weakness or default in the customer’s
applications or products, or the application or use by customer’s third party
customer(s). Customer is responsible for doing all necessary testing for the
customer’s applications and products using Ampleon products in order to
avoid a default of the applications and the products or of the application or
use by customer’s third party customer(s). Ampleon does not accept any
liability in this respect.
Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) will cause permanent
damage to the device. Limiting values are stress ratings only and (proper)
operation of the device at these or any other conditions above those given in
the Recommended operating conditions section (if present) or the
Characteristics sections of this document is not warranted. Constant or
repeated exposure to limiting values will permanently and irreversibly affect
the quality and reliability of the device.
Terms and conditions of commercial sale — Ampleon products are sold
subject to the general terms and conditions of commercial sale, as published
at http://www.ampleon.com/terms, unless otherwise agreed in a valid written
individual agreement. In case an individual agreement is concluded only the
terms and conditions of the respective agreement shall apply. Ampleon
hereby expressly objects to applying the customer’s general terms and
conditions with regard to the purchase of Ampleon products by customer.
No offer to sell or license — Nothing in this document may be interpreted or
construed as an offer to sell products that is open for acceptance or the grant,
conveyance or implication of any license under any copyrights, patents or
other industrial or intellectual property rights.
Export control — This document as well as the item(s) described herein
may be subject to export control regulations. Export might require a prior
authorization from competent authorities.
Document status[1][2] Product status[3] Definition
Objective [short] data sheet Development This document contains data from the objective specification for product development.
Preliminary [short] data sheet Qualification This document contains data from the preliminary specification.
Product [short] data sheet Production This document contains the product specification.
BLF888A_BLF888AS#6 All information provided in this document is subject to legal disclaimers. © Ampleon The Netherlands B.V. 2015. All rights reserved.
Product data sheet Rev. 6 — 1 September 2015 16 of 17
BLF888A; BLF888AS
UHF power LDMOS transistor
Non-automotive qualified products — Unless this data sheet expressly
states that this specific Ampleon product is automotive qualified, the product
is not suitable for automotive use. It is neither qualified nor tested in
accordance with automotive testing or application requirements. Ampleon
accepts no liability for inclusion and/or use of non-automotive qualified
products in automotive equipment or applications.
In the event that customer uses the product for design-in and use in
automotive applications to automotive specifications and standards, customer
(a) shall use the product without Ampleon’ warranty of the product for such
automotive applications, use and specifications, and (b) whenever customer
uses the product for automotive applications beyond Ampleon’ specifications
such use shall be solely at customer’s own risk, and (c) customer fully
indemnifies Ampleon for any liability, damages or failed product claims
resulting from customer design and use of the product for automotive
applications beyond Ampleon’ standard warranty and Ampleon’ product
specifications.
Translations — A non-English (translated) version of a document is for
reference only. The English version shall prevail in case of any discrepancy
between the translated and English versions.
13.4 Licenses
13.5 Trademarks
Notice: All referenced brands, product names, service names and trademarks
are the property of their respective owners.
Any reference or use of any ‘NXP’ trademark in this document or in or on the
surface of Ampleon products does not result in any claim, liability or
entitlement vis-à-vis the owner of this trademark. Ampleon is no longer part of
the NXP group of companies and any reference to or use of the ‘NXP’
trademarks will be replaced by reference to or use of Ampleon’s own Any
reference or use of any ‘NXP’ trademark in this document or in or on the
surface of Ampleon products does not result in any claim, liability or
entitlement vis-à-vis the owner of this trademark. Ampleon is no longer part of
the NXP group of companies and any reference to or use of the ‘NXP’
trademarks will be replaced by reference to or use of Ampleon’s own
trademarks.
14. Contact information
For more information, please visit:
http://www.ampleon.com
For sales office addresses, please visit:
http://www.ampleon.com/sales
ICs with DVB-T or DVB-T2 functionality
Use of this product in any manner that complies with the DVB-T or the
DVB-T2 standard may require licenses under applicable patents of the
DVB-T respectively the DVB-T2 patent portfolio, which license is available
from Sisvel S.p.A., Via Sestriere 100, 10060 None (TO), Italy, and under
applicable patents of other parties.
BLF888A; BLF888AS
UHF power LDMOS transistor
© Ampleon The Netherlands B.V. 2015. All rights reserved.
For more information, please visit: http://www.ampleon.com
For sales office addresses, please visit: http://www.ampleon.com/sales
Date of release: 1 September 2015
Document identifier: BLF888A_BLF888AS#6
Please be aware that important notices concerning this document and the product(s)
described herein, have been included in section ‘Legal information’.
15. Contents
1 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1
1.1 General description . . . . . . . . . . . . . . . . . . . . . 1
1.2 Features and benefits. . . . . . . . . . . . . . . . . . . . 1
1.3 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
2 Pinning information. . . . . . . . . . . . . . . . . . . . . . 2
3 Ordering information. . . . . . . . . . . . . . . . . . . . . 2
4 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 3
5 Thermal characteristics . . . . . . . . . . . . . . . . . . 3
6 Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . 3
6.1 Ruggedness in class-AB operation . . . . . . . . . 5
7 Application information. . . . . . . . . . . . . . . . . . . 5
7.1 Narrowband RF figures . . . . . . . . . . . . . . . . . . 5
7.1.1 2-Tone. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
7.1.2 DVB-T. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
7.2 Broadband RF figures . . . . . . . . . . . . . . . . . . . 6
7.2.1 DVB-T. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
7.3 Impedance information . . . . . . . . . . . . . . . . . . . 7
7.4 Reliability . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
8 Test information. . . . . . . . . . . . . . . . . . . . . . . . . 9
9 Package outline . . . . . . . . . . . . . . . . . . . . . . . . 12
10 Handling information. . . . . . . . . . . . . . . . . . . . 14
11 Abbreviations. . . . . . . . . . . . . . . . . . . . . . . . . . 14
12 Revision history. . . . . . . . . . . . . . . . . . . . . . . . 14
13 Legal information. . . . . . . . . . . . . . . . . . . . . . . 15
13.1 Data sheet status . . . . . . . . . . . . . . . . . . . . . . 15
13.2 Definitions. . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
13.3 Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
13.4 Licenses . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16
13.5 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 16
14 Contact information. . . . . . . . . . . . . . . . . . . . . 16
15 Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17
