Jul. 2005
MITSUBISHI HVIGBT MODULES
CM1200DB-34N
HIGH POWER SWITCHING USE
INSULATED TYPE
●IC ................................................................ 1200A
●VCES ....................................................... 1700V
●Insulated Type
●2-element in a Pack
●Cu Baseplate
●Trench Gate IGBT : CSTBT™
●Soft Reverse Recovery Diode
APPLICATION
Motor control, High Reliability Converters / Inverters, DC choppers
CM1200DB-34N
HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
OUTLINE DRAWING & CIRCUIT DIAGRAM Dimensions in mm
4th-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
LABEL
11.85±0.2
20±0.1
42
31
E2
G2
E1
G1 C2C1
130±0.5
57±0.25 57±0.25
140±0.5
124±0.25
30±0.2
55.2±0.3
6 - φ 7 MOUNTING HOLES
4 - M8 NUTS
6 - M4 NUTS
CIRCUIT DIAGRAM
E1
C1
G1
4(E1)
3(C1)
C2
E2
G2
2(C2)
1(E2)
18±0.216±0.2
53±0.2 57±0.2
40±0.2 44±0.2
11.5±0.2
14±0.2
5±0.2
5±0.2
35±0.2
screwing depth
min. 16.5
screwing depth
min. 7.7
38
+1
–0
28
+1
–0
29.5±0.5
Jul. 2005
MITSUBISHI HVIGBT MODULES
CM1200DB-34N
HIGH POWER SWITCHING USE
INSULATED TYPE
HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
4th-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
MAXIMUM RATINGS
Collector-emitter voltage
Gate-emitter voltage
Maximum power dissipation
Junction temperature
Operating temperature
Storage temperature
Isolation voltage
Maximum short circuit pulse
width
VGE = 0V, Tj = 25°C
VCE = 0V, Tj = 25°C
TC = 80°C
Pulse (Note 1)
Pulse (Note 1)
TC = 25°C, IGBT part
RMS, sinusoidal, f = 60Hz, t = 1min.
VCC = 1200V, VCES ≤ 1700V, VGE = 15V
Tj = 125°C
Collector current
Emitter current
1700
±20
1200
2400
1200
2400
6900
–40 ~ +150
–40 ~ +125
–40 ~ +125
4000
10
Symbol Item Conditions UnitRatings
V
V
A
A
A
A
W
°C
°C
°C
V
µs
VCES
VGES
IC
ICM
IE
(Note 2)
IEM
(Note 2)
PC
(Note 3)
Tj
Top
Tstg
Viso
tpsc
VCE = VCES, VGE = 0V, Tj = 25°C
VGE = VGES, VCE = 0V, Tj = 25°C
IC = 1200A, VGE = 15V, Tj = 25°C (Note 4)
IC = 1200A, VGE = 15V, Tj = 125°C (Note 4)
VCC = 850V, IC = 1200A, VGE = 15V, Tj = 25°C
IE = 1200A, VGE = 0V, Tj = 25°C (Note 4)
IE = 1200A, VGE = 0V, Tj = 125°C (Note 4)
VCC = 850V, IC = 1200A, VGE = ±15V
RG(on) = 1.3Ω, Tj = 125°C, Ls = 150nH
Inductive load
VCC = 850V, IC = 1200A, VGE = ±15V
RG(off) = 3.3Ω, Tj = 125°C, Ls = 150nH
Inductive load
VCC = 850V, IC = 1200A, VGE = ±15V
RG(on) = 1.3Ω, Tj = 125°C, Ls = 150nH
Inductive load
V
V
Min Typ Max
4
0.5
2.80
—
—
—
—
—
3.30
—
—
—
—
—
—
—
—
—
—
—
mA
µA
nF
nF
nF
µC
V
µs
µs
mJ/pulse
µs
µs
mJ/pulse
µs
A
µC
mJ/pulse
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
ICES
IGES
Cies
Coes
Cres
Qg
VEC
(Note 2)
td(on)
tr
Eon
td(off)
tf
Eoff
trr
(Note 2)
Irr
(Note 2)
Qrr
(Note 2)
Erec
(Note 2)
Symbol Item Conditions
VGE(th)
VCE(sat)
Limits Unit
6.0
Note 1. Pulse width and repetition rate should be such that junction temperature (Tj) does not exceed Topmax rating (125°C).
2. The symbols represent characteristics of the anti-parallel, emitter to collector free-wheel diode (FWDi).
3. Junction temperature (Tj) should not exceed Tjmax rating (150°C).
4. Pulse width and repetition rate should be such as to cause negligible temperature rise.
ELECTRICAL CHARACTERISTICS
Collector cut-off current
Gate-emitter
threshold voltage
Gate leakage current
Collector-emitter
saturation voltage
Input capacitance
Output capacitance
Reverse transfer capacitance
Total gate charge
Emitter-collector voltage
Turn-on delay time
Turn-on rise time
Turn-on switching energy
Turn-off delay time
Turn-off fall time
Turn-off switching energy
Reverse recovery time
Reverse recovery current
Reverse recovery charge
Reverse recovery energy
IC = 120mA, VCE = 10V, Tj = 25°C
VCE = 10V, f = 100kHz
VGE = 0V, Tj = 25°C
—
—
2.15
2.40
176
9.6
2.8
6.8
2.60
2.30
1.00
0.40
380
1.20
0.30
360
1.00
560
300
220
7.0 8.0
Jul. 2005
MITSUBISHI HVIGBT MODULES
CM1200DB-34N
HIGH POWER SWITCHING USE
INSULATED TYPE
HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
4th-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
Rth(j-c)Q
Rth(j-c)R
Rth(c-f)
Junction to Case, IGBT part, 1/2 module
Junction to Case, FWDi part, 1/2 module
Case to Fin, λgrease = 1W/m·K, 1/2 module
K/kW
K/kW
K/kW
Thermal resistance
Contact thermal resistance
Min Typ Max
18.0
40.0
—
—
—
16.0
—
—
—
THERMAL CHARACTERISTICS
Symbol Item Conditions Limits Unit
M
—
CTI
d
a
d
s
L
C-E(int)
R
C-E(int)
M8 : Main terminals screw
M6 : Mounting screw
M4 : Auxiliary terminals screw
IGBT part
TC = 25°C
N·m
kg
—
mm
mm
nH
mΩ
Mounting torque
Mass
Comparative tracking index
Clearance distance in air
Creepage distance along surface
Internal inductance
Internal lead resistance
Min Typ Max
20.0
6.0
3.0
—
—
—
—
—
—
—
—
—
1.3
—
—
—
30
0.28
7.0
3.0
1.0
—
600
9.5
15.0
—
—
MECHANICAL CHARACTERISTICS
Symbol Item Conditions Limits Unit
Jul. 2005
MITSUBISHI HVIGBT MODULES
CM1200DB-34N
HIGH POWER SWITCHING USE
INSULATED TYPE
HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
4th-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
PERFORMANCE CURVES
2000
2400
1600
1200
800
400
03 4210 56
OUTPUT CHARACTERISTICS
(TYPICAL)
COLLECTOR-EMITTER VOLTAGE (V)
COLLECTOR CURRENT (A)
2000
2400
1600
1200
800
400
06 8420 10 12
TRANSFER CHARACTERISTICS
(TYPICAL)
GATE-EMITTER VOLTAGE (V)
COLLECTOR CURRENT (A)
5
4
3
2
1
01200 16008004000 2000 2400
5
4
3
2
1
01200 16008004000 2000 2400
COLLECTOR CURRENT (A)
COLLECTOR-EMITTER SATURATION
VOLTAGE CHARACTERISTICS
(TYPICAL)
EMITTER CURRENT (A)
EMITTER-COLLECTOR VOLTAGE (V)
FREE-WHEEL DIODE
FORWARD CHARACTERISTICS
(TYPICAL)
COLLECTOR-EMITTER SATURATION VOLTAGE (V)
VGE = 15V
VGE = 12V
VGE = 10V
VGE = 8V
Tj = 125°C
VGE = 15V
Tj = 25°C
Tj = 125°C
Tj = 25°C
Tj = 125°C
Tj = 25°C
Tj = 125°C
VGE = 20V
VCE = 20V
Jul. 2005
MITSUBISHI HVIGBT MODULES
CM1200DB-34N
HIGH POWER SWITCHING USE
INSULATED TYPE
HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
4th-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
CAPACITANCE CHARACTERISTICS
(TYPICAL)
COLLECTOR-EMITTER VOLTAGE (V)
CAPACITANCE (nF)
GATE CHARGE CHARACTERISTICS
(TYPICAL)
GATE CHARGE (µC)
GATE-EMITTER VOLTAGE (V)
COLLECTOR CURRENT (A)
SWITCHING ENERGIES (mJ/pulse)
HALF-BRIDGE
SWITCHING ENERGY CHARACTERISTICS
(TYPICAL)
GATE RESISTANCE (Ω)
SWITCHING ENERGIES (mJ/pulse)
HALF-BRIDGE
SWITCHING ENERGY CHARACTERISTICS
(TYPICAL)
2000
1600
1200
800
400
06 8420 10 12
1000
1200
800
600
400
200
01200 16008004000 2000 2400
102
103
101
100
100
10-1 23 57 101102
20
16
12
8
4
04 620 810
23 57 23 57
2
3
5
7
2
3
5
7
2
3
5
7
Cres
Coes
Cies
VGE = 0V, Tj = 25°C
f = 100kHz
VCC = 850V, IC = 1200A
Tj = 25°C
VCC = 850V, VGE = ±15V
RG(on) = 1.3Ω, RG(off) = 3.3Ω
Tj = 125°C, Inductive load
VCC = 850V, IC = 1200A
VGE = ±15V
Tj = 125°C, Inductive load
Eon
Eon
Eoff
Eoff
Erec
Erec
Jul. 2005
MITSUBISHI HVIGBT MODULES
CM1200DB-34N
HIGH POWER SWITCHING USE
INSULATED TYPE
HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
4th-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
COLLECTOR CURRENT (A)
SWITCHING TIMES (µs)
TIME (s)
3000
2500
2000
1500
1000
0500 10000 1500 2000
500
HALF-BRIDGE
SWITCHING TIME CHARACTERISTICS
(TYPICAL)
EMITTER CURRENT (A)
REVERSE RECOVERY CHARGE (µC)
FREE-WHEEL DIODE
REVERSE RECOVERY CHARACTERISTICS
(TYPICAL)
TRANSIENT THERMAL
IMPEDANCE CHARACTERISTICS
COLLECTOR-EMITTER VOLTAGE (V)
COLLECTOR CURRENT (A)
REVERSE BIAS SAFE OPERATING AREA
(RBSOA)
NORMALIZED TRANSIENT THERMAL IMPEDANCE
500
400
300
200
100
01200 16008004000 2000 2400
10
0
10
1
10
-1
10
-2
2
3
5
7
2
3
5
7
2
3
5
7
10
3
10
223 57
10
4
23 57
23 57
1.2
1.0
0.8
0.6
0.4
0
10-2 10-1
10-3 100101
0.2
23 57 23 57 23 57
Module
Chip
V
CC
= 850V, V
GE
= ±15V
R
G(on)
= 1.3Ω, R
G(off)
=
3.3Ω
T
j
= 125°C, Inductive load
V
CC
= 850V, V
GE
= ±15V
R
G(on)
= 1.3Ω
T
j
= 125°C, Inductive load
t
d(off)
Q
rr
t
d(on)
t
r
t
f
Single Pulse, T
C
= 25°C
R
th(j–c)Q
= 18K/kW
R
th(j–c)R
= 40K/kW
V
CC
≤ 1200V, V
GE
= +/-15V
T
j
= 125°C, R
G(off)
≥ 3.3Ω
