TIL113 OPTICALLY COUPLED ISOLATOR PHOTODARLINGTON OUTPUT UL recognised, File No. E91231 l Dimensions in mm 2.54 APPROVALS 6.4 6.2 'X' SPECIFICATION APPROVALS l VDE 0884 pending 6 5 3 4 1.54 8.8 8.4 FEATURES l Options :10mm lead spread - add G after part no. Surface mount - add SM after part no. Tape&reel - add SMT&R after part no. l High Current Transfer Ratio l High Isolation Voltage (5.3kVRMS ,7.5kVPK ) l All electrical parameters 100% tested l Custom electrical selections available APPLICATIONS l Computer terminals l Industrial systems controllers l Measuring instruments l Signal transmission between systems of different potentials and impedances OPTION G 0.5 7.8 7.4 4.3 4.1 0.5 DESCRIPTION The TIL113 is an optically coupled isolator consisting of an infrared light emitting diode and NPN silicon photodarlington in a space efficient dual in line plastic package. OPTION SM SURFACE MOUNT 1 2 0.3 3.3 9.6 8.4 ABSOLUTE MAXIMUM RATINGS (25C unless otherwise specified) Storage Temperature -55C to + 150C Operating Temperature -55C to + 100C Lead Soldering Temperature (1/16 inch (1.6mm) from case for 10 secs) 260C INPUT DIODE Forward Current Reverse Voltage Power Dissipation 80mA 5V 105mW OUTPUT TRANSISTOR Collector-emitter Voltage BVCEO Collector-base Voltage BVCBO Emitter-collector Voltage BVECO Power Dissipation 30V 30V 7V 150mW POWER DISSIPATION 5.08 max. 1.2 0.6 10.2 9.5 1.4 0.9 0.26 10.16 ISOCOM COMPONENTS LTD Unit 25B, Park View Road West, Park View Industrial Estate, Brenda Road Hartlepool, TS25 1YD England Tel: (01429)863609 Fax : (01429) 863581 e-mail sales@isocom.co.uk http://www.isocom.com 19/4/99 Total Power Dissipation 250mW (derate linearly 3.3mW/C above 25C) ISOCOM INC 1024 S. Greenville Ave, Suite 240, Allen, TX 75002 USA Tel: (214) 495-0755 Fax: (214) 495-0901 e-mail info@isocom.com http://www.isocom.com DB91047-AAS/A1 ELECTRICAL CHARACTERISTICS ( TA = 25C Unless otherwise noted ) Input Output Coupled PARAMETER MIN TYP MAX UNITS Forward Voltage (VF) Reverse Voltage (VR) Reverse Current (IR) 3 1.2 Collector-emitter Breakdown (BVCEO) Collector-base Breakdown (BVCBO) Emitter-collector Breakdown (BVECO) Collector-emitter Dark Current (ICEO) 1.5 10 V V A IF = 10mA IR = 10A VR = 3V 100 V V V nA IC = 1mA (note 2) IC = 100A IE = 100A VCE = 10V mA 10mA IF , 1V VCE V 50mA IF , 50mA IC VRMS VPK (note 1) (note 1) VIO = 500V (note 1) s s VCC= 15V, IC = 10mA, RL = 100 , fig.1 30 30 7 Collector Output Current ( IC ) (Note 2) 30 Collector-emitter Saturation VoltageVCE(SAT) Input to Output Isolation Voltage VISO 1.2 5300 7500 Input-output Isolation Resistance RISO 5x1010 Output Rise Time Output Fall Time Note 1 Note 2 tr tf 60 53 TEST CONDITION 300 250 Measured with input leads shorted together and output leads shorted together. Special Selections are available on request. Please consult the factory. FIGURE 1 VCC = 15V Input 100 ton toff IC = 10mA tr Input 19/4/99 Output tf Output 10% 10% 90% 90% DB91047-AAS/A1 Collector Power Dissipation vs. Ambient Temperature Current Transfer Ratio vs. Forward Current 10000 5000 Current transfer ratio CTR (%) Collector power dissipation P C (mW) 200 150 100 50 0 1000 800 500 100 50 VCE = 1V TA = 25C 10 0 -30 0 25 50 75 100 0.1 0.2 0.5 125 Forward Current vs. Ambient Temperature TA = 25C 20 Collector current I C (mA) 80 Forward current I F (mA) 10 20 50 100 50mA 100 60 40 20 0 10mA 5mA 80 60 40 2mA 20 IF = 1mA 0 -30 0 25 50 75 100 125 0 Ambient temperature TA ( C ) Relative current transfer ratio 1.5 1.0 IF = 50mA IC = 50mA 0.6 2 3 4 5 Relative Current Transfer Ratio vs. Ambient Temperature 1.2 0.8 1 Collector-emitter voltage VCE ( V ) Collector-emitter Saturation Voltage vs. Ambient Temperature (V) CE(SAT) 5 Collector Current vs. Collector-emitter Voltage 100 Collector-emitter saturation voltage V 2 Forward current IF (mA) Ambient temperature TA ( C ) 0.4 0.2 0 IF = 10mA VCE = 1V 1.0 0.5 0 -30 0 25 50 75 Ambient temperature TA ( C ) 19/4/99 1 100 -30 0 25 50 75 Ambient temperature TA ( C ) 100 DB91047-AAS/A1