© 2008 IXYS CORPORATION, All rights reserved
TrenchTM P & N-Channel
Power MOSFET
Common Drain Topology
DS100037(09/08)
Symbol Test Conditions Characteristic Values
Min. Typ. Max.
CP Coupling capacitance between shorted 40 pF
pins and mounting tab in the case
dS ,dA pin - pin 1.7 mm
dS ,dA pin - backside metal 5.5 mm
Weight 9 g
FMP76-01T
Features
zSilicon chip on Direct-Copper Bond
(DCB) substrate
- UL recognized package
- Isolated mounting surface
- 2500V electrical isolation
zAvalanche rated
zLow QG
zLow Drain-to-Tab capacitance
zLow package inductance
Advantages
zLow gate drive requirement
zHigh power density
zLow drain to ground capacitance
zFast switching
Applications
zDC and AC motor drives
zClass AB audio amplifiers
zMulti-phase DC to DC converters
zIndustrial battery chargers
zSwitching power supplies
Symbol Test Conditions Maximum Ratings
VDSS TJ= 25°C to 150°C - 100 V
VDGR TJ= 25°C to 150°C, RGS = 1MΩ - 100 V
VGSS Continuous ± 20 V
VGSM Transient ± 30 V
ID25 TC= 25°C - 54 A
IDM TC= 25°C, pulse width limited by TJM - 230 A
IATC= 25°C - 38 A
EAS TC= 25°C 1.0 J
PDTC= 25°C 132 W
P - CHANNEL
Advance Technical Information
Symbol Test Conditions Maximum Ratings
TJ-55 ... +150 °C
TJM 150 °C
Tstg -55 ... +150 °C
VISOLD 50/60HZ, RMS, t = 1min, leads-to-tab 2500 ~V
TL 1.6mm (0.062 in.) from case for 10s 300 °C
TSOLD Plastic body for 10s 260 °C
FC Mounting force 20..120 / 4.5..27 N/lb.
P CH. N CH.
VDSS - 100V 100V
ID25 - 54A 62A
RDS(on) 24mΩ Ω
Ω Ω
Ω 11mΩΩ
ΩΩ
Ω
trr(typ) 70ns 67ns
T2
3
5
4
1
2
T1
2
3
4
5
1
ISOPLUS i4-PakTM
1
5
Isolated Tab
IXYS reserves the right to change limits, test conditions, and dimensions.
FMP76-01T
ISOPLUS i4-PakTM Outline
Ref: IXYS CO 0077 R0
IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2
by one or more of the following U.S. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2
4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537
Symbol Test Conditions2 Characteristic Values
(TJ = 25°C unless otherwise specified) Min. Typ. Max.
BVDSS VGS = 0V, ID = - 250 μA - 100 V
VGS(th) VDS = VGS, ID = - 250μA - 2.0 - 4.0 V
IGSS VGS = ±20 V, VDS = 0V ± 100 nA
IDSS VDS = VDSS, VGS = 0V -15 μA
TJ = 125°C - 750 μA
RDS(on) VGS = -10V, ID = - 38A, Note 1 24 mΩ
gfs VDS = -10V, ID = - 38A, Note 1 35 58 S
Ciss 13.7 nF
Coss VGS = 0V, VDS = - 25V, f = 1MHz 890 pF
Crss 275 pF
td(on) Resistive Switching Times 25 ns
trVGS = -10V, VDS = 0.5 z VDSS, ID = - 38A 40 ns
td(off) RG = 1Ω (External) 52 ns
tf 20 ns
Qg(on) 197 nC
Qgs VGS= -10V, VDS = 0.5 z VDSS, ID = - 38A 65 nC
Qgd 65 nC
RthJC 0.95 °C/W
RthCS 0.15 °C/W
Drain-Source Diode Characteristic Values
(TJ = 25°C unless otherwise specified)
Symbol Test Conditions2 Min. Typ. Max.
ISVGS = 0V - 54 A
ISM Repetitive, pulse width limited by TJM - 304 A
VSD IF = - 38A, VGS = 0V, Note 1 - 1.3 V
trr IF = - 38A, di/dt = 100A/μs 70 ns
QRM VR = - 50V, VGS = 0V 215 nC
IRM - 6 A
© 2008 IXYS CORPORATION, All rights reserved
FMP76-01T
N - CHANNEL
Symbol Test Conditions Maximum Ratings
VDSS TJ= 25°C to 150°C 100 V
VDGR TJ= 25°C to 150°C, RGS = 1MΩ 100 V
VGSM Transient ± 20 V
ID25 TC= 25°C 62 A
IDM TC= 25°C, pulse width limited by TJM 300 A
IATC= 25°C 65 A
EAS TC= 25°C 500 mJ
PDTC= 25°C 89 W
Symbol Test Conditions2 Characteristic Values
(TJ = 25°C unless otherwise specified) Min. Typ. Max.
BVDSS VGS = 0V, ID = 250 μA 100 V
VGS(th) VDS = VGS, ID = 250μA 2.5 4.5 V
IGSS VGS = ±20 V, VDS = 0V ± 200 nA
IDSS VDS = VDSS 5 μA
VGS = 0V TJ = 150°C 250 μA
RDS(on) VGS = 10V, ID = 25A, (Note 1) 11 mΩ
gfs VDS = 10V, ID = 60A, (Note 1) 55 93 S
Ciss 5080 pF
Coss VGS = 0V, VDS = 25 V, f = 1 MHz 635 pF
Crss 95 pF
td(on) Resistive Switching Times 30 ns
trVGS = 10V, VDS = 0.5 z VDSS, ID = 25A 47 ns
td(off) RG = 5Ω (External) 44 ns
tf 28 ns
Qg(on) 104 nC
Qgs VGS= 10V, VDS = 0.5 z VDSS, ID = 25A 30 nC
Qgd 29 nC
RthJC 1.4 °C/W
RthCS 0.15 °C/W
IXYS reserves the right to change limits, test conditions, and dimensions.
FMP76-01T
ADVANCE TECHNICAL INFORMATION
The product presented herein is under development. The Technical Specifications offered are
derived from a subjective evaluation of the design, based upon prior knowledge and experience,
and constitute a "considered reflection" of the anticipated objective result. IXYS reserves the right
to change limits, test conditions, and dimensions without notice.
Source-Drain Diode Characteristic Values
TJ = 25°C unless otherwise specified)
Symbol Test Conditions3Min. Typ. Max.
ISVGS = 0V 62 A
ISM Repetitive, pulse width limited by TJM 350 A
VSD IF = 25A, VGS = 0V, Note 1 1.0 V
trr 67 ns
QRM 160 nC
IRM 4.7 A
Note 1: Pulse test, t ≤ 300μs, duty cycle, d ≤ 2 %.
IF = 25A, -di/dt = 100A/μs
VR = 50V, VGS = 0V
