LITE-ON SEMICONDUCTOR MBR4030PT thru 4060PT REVERSE VOLTAGE - 30 to 60 Volts FORWARD CURRENT - 40 Amperes SCHOTTKY BARRIER RECTIFIERS TO-3P FEATURES Metal of silicon rectifier,majority carrier conducton Guard ring for transient protection Low power loss, high efficiency High current capability, low VF High surge capacity Plastic package has UL flammability classification 94V-0 For use in low voltage,high frequency inverters,free whelling,and polarity protection applications F E A P G Q O K PIN 2 1 B 3 D H MECHANICAL DATA C I Case : TO-3P molded plastic Polarity : As marked on the body Weight : 0.2 ounces, 5.6 grams Mounting position : Any N J L M L PIN 1 PIN 2 CASE PIN 3 TO-3P MIN. MAX. 15.75 16.25 21.25 21.75 20.10 19.60 3.78 4.38 1.88 2.08 4.87 5.13 4.4TYP. 1.90 2.16 2.93 3.22 1.12 1.22 2.90 3.20 5.20 5.70 2.10 2.40 0.76 0.51 2.18 1.93 DIM. A B C D E F G H I J K L M N O P Q 20 TYP 10 TYP All Dimensions in millimeter MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25 ambient temperature unless otherwise specified. Single phase, half wave, 60Hz, resistive or inductive load. For capacitive load, derate current by 20% CHARACTERISTICS Maximum Recurrent Peak Reverse Voltage Maximum RMS Voltage Maximum DC Blocking Voltage Maximum Average Forward Rectified Current (See Fig.1) SYMBOL VRRM VRMS VDC MBR 4030PT 30 21 30 MBR 4035PT 35 24.5 35 MBR 4040PT 40 28 40 MBR 4045PT 45 31.5 45 MBR 4050PT 50 35 50 MBR 4060PT 60 42 60 UNIT V V V @TC=125 C I(AV) 40 A Peak Forward Surge Current 8.3ms single half sine-wave superimposed on rated load (JEDEC METHOD) IFSM 400 A Voltage Rate of Change (Rated VR) dv/dt IF =20A @ TJ =25 C Maximum Forward IF =20A @ TJ =125 C Voltage (Note 1) IF =40A @ TJ =25 C IF =40A @ TJ =125 C Maximum DC Reverse Current @TJ =25 C at Rated DC Blocking Voltage @TJ =125 C Typical Thermal Resistance (Note 2) Typical Junction Capacitance per element (Note 3) Operating Temperature Range Storage Temperature Range VF IR R0JC CJ TJ TSTG NOTES : 1. 300us Pulse Width, 2% Duty Cycle. 2. Thermal Resistance Junction to Case. 3. Measured at 1.0MHz and applied reverse voltage of 4.0V DC. 10000 V/us 0.80 0.70 - 0.70 0.60 0.80 0.75 V 1.0 100 1.4 C/W 700 pF -55 to +150 -55 to +175 mA C C REV. 2, 01-Dec-2000, KTH11 AVERAGE FORWARD CURRENT AMPERES FIG.1 - FORWARD CURRENT DERATING CURVE 40 30 20 10 RESISTIVE OR INDUCTIVE LOAD 0 25 50 75 100 125 150 PEAK FORWARD SURGE CURRENT, AMPERES RATING AND CHARACTERISTIC CURVES MBR4030PT thru MBR4060PT FIG.2 - MAXIMUM NON-REPETITIVE SURGE CURRENT 400 300 200 100 8.3ms Single Half-Sine-Wave (JEDEC METHOD) 175 1 2 5 CASE TEMPERATURE , C FIG.3 - TYPICAL REVERSE CHARACTERISTICS 50 100 FIG.4 - TYPICAL FORWARD CHARACTERISTICS 10 100 INSTANTANEOUS FORWARD CURRENT ,(A) INSTANTANEOUS REVERSE CURRENT ,(mA) 20 10 NUMBER OF CYCLES AT 60Hz TJ = 125 C 1.0 0.1 TJ = 75 C 0.01 TJ = 25 C 10 MBR4030PT~ MBR4045PT MBR4050PT ~ MBR4060PT 1.0 TJ = 25 C PULSE WIDTH 300us 300ua 0.001 0.1 0 20 40 60 80 100 140 120 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 INSTANTANEOUS FORWARD VOLTAGE , VOLTS PERCENT OF RATED PEAK REVERSE VOLTAGE ,(%) FIG.5 - TYPICAL JUNCTION CAPACITANCE CAPACITANCE , (pF) 10000 1000 TJ = 25 C, f= 1MHz 100 0.1 1 4 10 100 REVERSE VOLTAGE , VOLTS REV. 2, 01-Dec-2000, KTH11