TEC
MAGNA
Magnatec. Telephone (01455) 554711. Telex: 341927. Fax (01455) 552612. Prelim. 10/94
BUZ900D
BUZ901D
VDSX Drain – Source Voltage
VGSS Gate – Source Voltage
IDContinuous Drain Current
ID(PK) Body Drain Diode
PDTotal Power Dissipation @ Tcase = 25°C
Tstg Storage Temperature Range
TjMaximum Operating Junction Temperature
RθJC Thermal Resistance Junction – Case
±14V
16A
16A
250W
–55 to 150°C
150°C
0.5°C/W
MECHANICAL DATA
Dimensions in mm
39.0 ± 1.1
30.2 ± 0.15
16.9 ± 0.15
R 4.0 ± 0.1 R 4.4 ± 0.2
Ø 1.0
Ø 20 M ax.
1.50
Typ. 11.60
± 0.3
8.7 Max.
10.90 ± 0.1
+0.1
-0.15
25.0
12
N–CHANNEL
POWER MOSFET
FEATURES
• HIGH SPEED SWITCHING
• N–CHANNEL POWER MOSFET
• SEMEFAB DESIGNED AND DIFFUSED
• HIGH VOLTAGE (160V & 200V)
• HIGH ENERGY RATING
• ENHANCEMENT MODE
• INTEGRAL PROTECTION DIODE
• P–CHANNEL ALSO AVAILABLE AS
BUZ905D & BUZ906D
• DOUBLE DIE PACKAGE FOR MAXIMUM
POWER AND HEATSINK SPACE
Pin 1 – Gate
TO–3
Pin 2 – Drain Case – Source
ABSOLUTE MAXIMUM RATINGS
(Tcase = 25°C unless otherwise stated)
POWER MOSFETS FOR
AUDIO APPLICATIONS
BUZ900D
160V BUZ901D
200V
TEC
MAGNA
Magnatec. Telephone (01455) 554711. Telex: 341927. Fax (01455) 552612. Prelim. 10/94
BUZ900D
BUZ901D
Characteristic Test Conditions Min. Typ. Max. Unit
BVDSX Drain – Source Breakdown Voltage
BVGSS Gate – Source Breakdown Voltage
VGS(OFF) Gate – Source Cut–Off Voltage
VDS(SAT)* Drain – Source Saturation Voltage
IDSX Drain – Source Cut–Off Current
yfs* Forward Transfer Admittance
160
200
±14
0.1 1.5
12
10
10
1.4 4
* Pulse Test: Pulse Width = 300µs , Duty Cycle ≤2%.
VGS = –10V BUZ900D
ID= 10mA BUZ901D
VDS = 0 IG= ±100µA
VDS = 10V ID= 100mA
VGD = 0 ID= 16A
VDS = 160V
BUZ900D
VGS = –10V VDS = 200V
BUZ901D
VDS = 10V ID= 3A
V
V
V
V
mA
S
Characteristic Test Conditions Min. Typ. Max. Unit
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
ton Turn–on Time
toff Turn-off Time
950
550
18
160
80
VDS = 10V
f = 1MHz
VDS = 20V
ID= 7A
pF
ns
STATIC CHARACTERISTICS (Tcase = 25°C unless otherwise stated)
DYNAMIC CHARACTERISTICS (Tcase = 25°C unless otherwise stated)
50
100
150
200
250
300
0025 50 75 100 125 150
T — CASE TEMPERATURE (˚C)
C
CHANNEL DISSIPATION (W)
Derating Chart
TEC
MAGNA
Magnatec. Telephone (01455) 554711. Telex: 341927. Fax (01455) 552612. Prelim. 10/94
BUZ900D
BUZ901D
123456789
0
2
4
6
8
10
12
14
16
V — GATE – SOURCE VOLTAGE (V)
GS
V — DRAIN – SOURCE VOLTAGE (V)
DS
T = 25˚C
C
I = 9A
D
I = 5A
D
D
I = 3A
I = 14A
D
T = 25˚C
C
T = 75˚C
C
I — DRAIN CURRENT (A)
D
V — GATE – SOURCE VOLTAGE (V)
GS
V = 10V
DS
012345678910 11
0
2
4
6
8
10
12
14
16
18
20
22
T = 100˚C
C
010 20 30 40 50 60 70
0
2
4
6
8
10
12
14
16
18
20
22
P
=
2
5
0
W
C
H
I — DRAIN CURRENT (A)
D
V — DRAIN – SOURCE VOLTAGE (V)
DS
010 20 30 40 50 60 70
0
3V
1V
6V
5V
4V
7V
T = 25˚C
C
2V
Typical Transfer Characteristics
Typical Output Characteristics
22
2
4
6
8
10
12
14
16
18
20
0
P
=
2
5
0
W
C
H
0 10 20 30 40 50 60 70
I — DRAIN CURRENT (A)
D
V — DRAIN – SOURCE VOLTAGE (V)
DS
T = 75˚C
C
3V
2V
6V
5V
4V
7V
1V
Typical Output Characteristics
Drain – Source Voltage
vs
Gate – Source Voltage
110 100 1000
0.1
1
10
100
I — DRAIN CURRENT (A)
D
V — DRAIN – SOURCE VOLTAGE (V)
DS
T = 25˚C
C
160V
200V
BUZ900D BUZ901D
D
C
O
P
E
R
ATIO
N
Forward Bias Safe Operating Area
0 2 6 8 10 12 14
0.1
1
10
100
416
G — TRANSCONDUCTANCE (S)
FS
I — DRAIN CURRENT (A)
D
T = 25˚C
C
T = 75˚C
C
V = 20V
DS
Transconductance
