C
B
E
SOT23
SOT23 NPN SILICON PLANAR
VHF TRANSISTOR
ISSUE 3 JANUARY 1996 ✪
PARTMARKING DETAIL G1
ABSOLUTE MAXIMUM RATINGS.
PARAMETER SYMBOL VALUE UNIT
Collector-Base Voltage VCBO 30 V
Collector-Emitter Voltage VCEO 20 V
Emitter-Base Voltage VEBO 4V
Peak Pulse Current ICM 25 mA
Continuous Collector Current IC25 mA
Power Dissipation at Tamb
=25°C Ptot 330 mW
Operating and Storage Temperature Range Tj:Tstg -55 to +150 °C
ELECTRICAL CHARACTERISTICS (at Tamb
= 25°C).
PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.
Collector Cut-Off
Current
ICBO 100
10
nA
µA
VCB
=20V, IE=0
VCB
=20V, IE=0,
Tamb
=100°C
Base-Emitter Voltage VBE 740 900 mV IC=7mA, VCE
=10V*
Static Forward Current
Transfer Ratio
hFE 40 85 IC=7mA, VCE
=10V*
Transition Frequency fT275 450 MHz IC=5mA, VCE
=10V
f=100MHz
Feedback Capacitance Cre 0.35 0.40 pF IC=1mA, VCE
=10V
f=1MHz
Collector Capacitance CTC 0.8 pF IE=Ie=0, VCB
=10V
f=1MHz
* Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤ 2%
3 - 53
BFS20
