2N3704
2N3705
2N3706
SILICON
NPN TRANSISTORS
DESCRIPTION:
The CENTRAL SEMICONDUCTOR 2N3704, 2N3705,
and 2N3706 are silicon NPN planar transistors designed
for general purpose amplifier and switching applications.
MARKING: FULL PART NUMBER
TO-92 CASE
MAXIMUM RATINGS: (TA=25°C) SYMBOL 2N3704 2N3705 2N3706 UNITS
Collector-Base Voltage VCBO 50 50 40 V
Collector-Emitter Voltage VCEO 30 30 20 V
Emitter-Base Voltage VEBO 5.0 V
Continuous Collector Current IC 800 mA
Power Dissipation PD 625 mW
Operating and Storage Junction Temperature TJ, Tstg -65 to +150 °C
Thermal Resistance JA 200 °C/W
ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted)
2N3704 2N3705 2N3706
SYMBOL TEST CONDITIONS MIN MAX MIN MAX MIN MAX UNITS
ICBO V
CB=20V - 100 - 100 - 100 nA
IEBO V
EB=3.0V - 100 - 100 - 100 nA
BVCBO IC=100μA 50 - 50 - 40 - V
BVCEO IC=10mA 30 - 30 - 20 - V
BVEBO IE=100μA 5.0 - 5.0 - 5.0 - V
VCE(SAT) IC=100mA, IB=5.0mA - 0.6 - 0.8 - 1.0 V
VBE(ON) VCE=2.0V, IC=100mA 0.5 1.0 0.5 1.0 0.5 1.0 V
hFE VCE=2.0V, IC=50mA 100 300 50 150 30 600
fT V
CE=2.0V, IC=50mA 100 - 100 - 100 - MHz
Cob V
CB=10V, f=1.0MHz - 12 - 12 - 12 pF
R2 (24-February 2017)
www.centralsemi.com
2N3704
2N3705
2N3706
SILICON
NPN TRANSISTORS
LEAD CODE:
1) Emitter
2) Collector
3) Base
MARKING:
FULL PART NUMBER
TO-92 CASE - MECHANICAL OUTLINE
www.centralsemi.com
R2 (24-February 2017)
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(001)
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