DSI30-12A
13
Single Diode
Standard Rectifier
Part number
DSI30-12A
Backside: cathode
FAV
F
V V1.25
RRM
30
1200
=
V=V
I=A
Features / Advantages: Applications: Package:
● Planar passivated chips
● Very low leakage current
● Very low forward voltage drop
● Improved thermal behaviour
● Diode for main rectification
● For single and three phase
bridge configurations
TO-220
● Industry standard outline
● RoHS compliant
● Epoxy meets UL 94V-0
Information furnished is believed to be accurate and reliable. However, users should independently
evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for,
and may not be used in, all applications. Read complete Disclaimer Notice at
Disclaimer Notice
www.littelfuse.com/disclaimer-electronics.
IXYS reserves the right to change limits, conditions and dimensions. 20191128cData according to IEC 60747and per semiconductor unless otherwise specified
© 2019 IXYS all rights reserved
DSI30-12A
V = V
A²s
A²s
A²s
A²s
Symbol
Definition
Ratings
typ.
max.
I
R
V
IA
V
F
1.29
R0.9 K/W
R
min.
30
V
RSM
V
40T = 25°C
VJ
T = °C
VJ
mA1.5V = V
R
T = 25°C
VJ
I = A
F
V
T = °C
C
130
P
tot
160 WT = 25°C
C
RK/W
30
1200
max. non-repetitive reverse blocking voltage
reverse current
forward voltage drop
total power dissipation
Unit
1.60
T = 25°C
VJ
150
V
F0
V0.82T = °C
VJ
175
r
F
14.1 mΩ
V1.25T = °C
VJ
I = A
F
V
30
1.66
I = A
F
60
I = A
F
60
threshold voltage
slope resistance for power loss calculation only
µA
150
V
RRM
V1200
max. repetitive reverse blocking voltage
T = 25°C
VJ
C
J
10
junction capacitance
V = V;400 T = 25°Cf = 1 MHz
RVJ
pF
I
FSM
t = 10 ms; (50 Hz), sine T = 45°C
VJ
max. forward surge current
T = °C
VJ
150
I²t T = 45°C
value for fusing
T = °C150
V = 0 V
R
V = 0 V
R
V = 0 V
V = 0 V
t = 8,3 ms; (60 Hz), sine
t = 10 ms; (50 Hz), sine
t = 8,3 ms; (60 Hz), sine
t = 10 ms; (50 Hz), sine
t = 8,3 ms; (60 Hz), sine
t = 10 ms; (50 Hz), sine
t = 8,3 ms; (60 Hz), sine
VJ
R
VJ
R
T = °C
VJ
175
300
325
325
315
A
A
A
A
255
275
450
440
1200
FAV
d =rectangular 0.5
average forward current
thermal resistance junction to case
thJC
thermal resistance case to heatsink
thCH
Rectifier
1300
0.5
IXYS reserves the right to change limits, conditions and dimensions. 20191128cData according to IEC 60747and per semiconductor unless otherwise specified
© 2019 IXYS all rights reserved
DSI30-12A
Ratings
XXXXXX
yywwZ
Logo
Part Number
Date Code
Lot #
123456
Product Marking
Location
DSI30-08AS TO-263AB (D2Pak) (2) 800
Package
T
op
°C
M
D
Nm0.6
mounting torque
0.4
T
VJ
°C175
virtual junction temperature
-40
Weight g2
Symbol
Definition
typ.
max.
min.
operation temperature
Unit
F
C
N60
mounting force with clip
20
I
RMS
RMS current
35 A
per terminal
150-40
DSI30-08AC
DSI30-12AS
ISOPLUS220AC (2)
TO-263AB (D2Pak) (2)
800
1200
DSI30-12AC
DSI30-16A
DSI30-16AS
ISOPLUS220AC (2)
TO-220AC (2)
TO-263AB (D2Pak) (2)
1200
1600
1600
TO-220
Similar Part Package Voltage class
DSI30-08A TO-220AC (2) 800
Delivery Mode Quantity Code No.Ordering Number Marking on ProductOrdering
DSI30-12A 476390Tube 50DSI30-12AStandard
T
stg
°C150
storage temperature
-40
threshold voltage
V0.82
mΩ
V
0 max
R
0 max
slope resistance *
11
Equivalent Circuits for Simulation
T =
VJ
I
V
0
R
0
Rectifier
°C
* on die level
175
IXYS reserves the right to change limits, conditions and dimensions. 20191128cData according to IEC 60747and per semiconductor unless otherwise specified
© 2019 IXYS all rights reserved
DSI30-12A
Dim. Millimeter Inches
Min. Max. Min. Max.
A 4.32 4.82 0.170 0.190
A1 1.14 1.39 0.045 0.055
A2 2.29 2.79 0.090 0.110
b 0.64 1.01 0.025 0.040
b2 1.15 1.65 0.045 0.065
C 0.35 0.56 0.014 0.022
D 14.73 16.00 0.580 0.630
E 9.91 10.66 0.390 0.420
e 5.08 BSC 0.200 BSC
H1 5.85 6.85 0.230 0.270
L 12.70 13.97 0.500 0.550
L1 2.79 5.84 0.110 0.230
ØP 3.54 4.08 0.139 0.161
Q 2.54 3.18 0.100 0.125
2x b2
E
ØP
Q
D
L1
L
2x b
e
C
A2
H1
A1
A
1 3
4
= supplier option
13
Outlines TO-220
IXYS reserves the right to change limits, conditions and dimensions. 20191128cData according to IEC 60747and per semiconductor unless otherwise specified
© 2019 IXYS all rights reserved
DSI30-12A
0.001 0.01 0.1 1
100
150
200
2
50
2 3 4 5 6 7 8 9
011
0
100
200
300
400
5
00
0.6 0.8 1.0 1.2 1.4 1.6 1.8
0
10
20
30
40
50
60
0 10 20 30
0
10
20
30
40
50
0 50 100 150 200
1 10 100 1000 10000
0.0
0.2
0.4
0.6
0.8
1.0
0 50 100 150 200
0
10
20
30
40
I
F
[A]
V
F
[V]
I
FSM
[A]
t [s]
I
2
t
[A
2
s]
t [ms]
P
tot
[W]
I
F(AV)M
[A] T
amb
[°C]
I
F(AV)M
[A]
T
C
[°C]
Z
thJC
[K/W]
Fig. 1 Forward current versus
voltage drop per diode
Fig. 2 Surge overload current Fig. 3 I
2
t versus time per diode
Fig. 4 Power dissipation vs. direct output current and ambient temperature Fig. 5 Max. forward current vs.
case temperature
Fig. 6 Transient thermal impedance junction to case
t [ms]
Constants for Z
thJC
calculation:
i R
thi
(K/W) t
i
(s)
1 0.03 0.0004
2 0.08 0.002
3 0.2 0.003
4 0.39 0.03
5 0.2 0.29
T
VJ
= 25°C
T
VJ
= 150°C
T
VJ
= 45°C
50 Hz, 80% V
RRM
T
VJ
= 45°C
T
VJ
= 150°C
V
R
= 0 V
T
VJ
= 125°C
150°C
R
thHA
:
0.6 K/W
0.8 K/W
1 K/W
2 K/W
4 K/W
8 K/W
DC =
1
0.5
0.4
0.33
0.17
0.08
DC =
1
0.5
0.4
0.33
0.17
0.08
Rectifier
IXYS reserves the right to change limits, conditions and dimensions. 20191128cData according to IEC 60747and per semiconductor unless otherwise specified
© 2019 IXYS all rights reserved