DATA SH EET
Product data sheet 2003 Jul 15
DISCRETE SEMICONDUCTORS
PMEG1020EV
Ultra low VF MEGA Schottky barrier
rectifier
M3D74
4
2003 Jul 15 2
NXP Semiconductors Product data sheet
Ultra low VF MEGA Schottky barrier
rectifier PMEG1020EV
FEATURES
Forward current: 2 A
Reverse voltage: 10 V
Ultra low forward voltage
Ultra small plastic SMD package.
APPLICATIONS
Low voltage rectification
High efficiency DC/ DC conv ersion
Switch mode power supply
Inverse polarity protection
Low power cons ump tion applications.
DESCRIPTION
Planar Maximum Efficiency Ge neral Application (MEGA)
Schottky barrier rectifier with an integrated guard ring for
stress protection encapsulated in a SOT666 ultra small
plastic SMD package.
PINNING
PIN DESCRIPTION
1cathode
2cathode
3anode
4anode
5cathode
6cathode
handbook, halfpage
123
456
1, 2
5, 6 3, 4
MHC310
Fig.1 Simplified outline (SOT666) and symbol.
Marking code: F2.
LIMITING VALUES
In accordance with the A bsolute Maxi m u m Rating System (IEC 60134).
Note
1. Only valid if pins 3 and 4 are connected in parallel.
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
VRcontinuous revers e voltage 10 V
IFcontinuous forward current Tsp 55 °C; note 1 2 A
IFRM repetitive peak forward current tp 1 ms; δ 0.5; note 1 3.2 A
IFSM non-repetitive peak forward current tp = 8 ms square wave; note 1 9 A
Tstg storage temperature 65 +150 °C
Tjjunction temperature 150 °C
Tamb operating ambient temperature 65 +150 °C
2003 Jul 15 3
NXP Semiconductors Pr oduct data sheet
Ultra low VF MEGA Schottky barrier
rectifier PMEG1020EV
ELECTRICAL CHARACTERISTIC S
Tamb = 25 °C unless otherwise specified.
Notes
1. Pulse test: tp = 300 μs; δ = 0.02.
2. For Schottky barrier rectifiers thermal runaway has to be considered, as in some applic ations the reverse power
losses (PR) are a significan t part of the total power losses .
THERMAL CHARACTE RISTICS
Notes
1. Refer to SOT666 standard mounting conditions.
2. Device mounted on a printed-circuit board, single-sided copper, tinplate d, mounting pad for cathode 1 cm2.
3. Solder point of cathode tabs.
Soldering
Reflow soldering is the only recommended soldering method.
SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT
VFforward voltage see Fig.2 ; no te 1
IF = 0.01 A 100 130 mV
IF = 0.1 A 164 200 mV
IF = 1 A 255 350 mV
IF = 2 A 306 460 mV
IRreverse current see Fig.3 note 2
VR = 5 V 0.7 2mA
VR = 8 V 1 2.5 mA
VR = 10 V 1.2 3mA
Cddiode capacit an ce VR = 5 V; f = 1 MHz; see Fig.4 37 45 pF
SYMBOL PARAMETER CONDITIONS VALUE UNIT
Rth j-a thermal resistance from junction to ambient note 1 405 K/W
note 2 215 K/W
Rth j-s thermal resistance from junction to solder point note 3 80 K/W
2003 Jul 15 4
NXP Semiconductors Pr oduct data sheet
Ultra low VF MEGA Schottky barrier
rectifier PMEG1020EV
GRAPHICAL DATA
handbook, halfpage
5000 100 200 300 400
104
103
102
10
1
MDB591
IF
(mA)
VF (mV)
(1) (3)(2)
Fig.2 Forward current as a function of forward
voltage; typical values.
(1) Tamb = 85 °C.
(2) Tamb = 25 °C.
(3) Tamb = 40 °C.
handbook, halfpage
100 2468
105
104
103
102
10
1
MDB195
IR
(μA)
VR (V)
(1)
(2)
(3)
Fig.3 Reverse current as a function of rev erse
voltage; typical values.
(1) Tamb = 85 °C.
(2) Tamb = 25 °C.
(3) Tamb = 40 °C.
handbook, halfpage
010
120
20
40
60
80
100
2468
MDB196
Cd
(pF)
VR (V)
Fig.4 Diode capacitance as a function of reverse
voltage; typical values.
f = 1 MHz; Tamb = 25 °C.
2003 Jul 15 5
NXP Semiconductors Pr oduct data sheet
Ultra low VF MEGA Schottky barrier
rectifier PMEG1020EV
PACKAGE OUTLINE
UNIT bpcDE e1HELpw
REFERENCES
OUTLINE
VERSION EUROPEAN
PROJECTION ISSUE DATE
01-01-04
01-08-27
IEC JEDEC EIAJ
mm 0.27
0.17 0.18
0.08 1.7
1.5 1.3
1.1 0.5
e
1.0 1.7
1.5 0.1
y
0.1
DIMENSIONS (mm are the original dimensions)
0.3
0.1
SOT666
bp
pin 1 index
D
e1
e
A
Lp
detail X
HE
E
A
S
0 1 2 mm
scale
A
0.6
0.5
c
X
123
456
Plastic surface mounted package; 6 leads SOT66
6
YS
wMA
2003 Jul 15 6
NXP Semiconductors Pr oduct data sheet
Ultra low VF MEGA Schottky barrier
rectifier PMEG1020EV
DATA SHEET STATUS
Notes
1. Please consult the most rec en tly iss ued document before initiating or comple ting a design.
2. The product status of device(s) described in this document may have changed since this document was published
and may differ in case of multiple devices. The latest product status information is available on the Internet at
URL http://www.nxp.com.
DOCUMENT
STATUS(1) PRODUCT
STATUS(2) DEFINITION
Objective data sheet Development This document contains data from the objective specification for pro duct
development.
Preliminary data sheet Qualification This document contains data from the preliminary specification.
Product data sheet Production T his document contains the product specification.
DISCLAIMERS
General Information in this document is believed to be
accurate and reliable . H ow ev er, NXP Semiconductors
does not give any representations or warranties,
expressed or implied, as to the accuracy or completeness
of such information and shall have no liability for the
consequenc es of use of such information.
Right to make changes NXP Semiconductors
reserves the right to make changes to informa t ion
published in this doc ument, including without limitation
specifications and product descriptions, at any time and
without notice. This document supersedes and replaces all
information supplied prior to the publication hereof.
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not designed, au thorized or warran ted to be suitable for
use in medical, military, aircraft, space or life support
equipment, nor in applications where failure or malfunction
of an NXP Semiconductors product can reason ably be
expected to result in pe rs onal injury, death or severe
property or environmental damage. NXP Semiconductors
accepts no liability for inclusion and/or use of NXP
Semiconductors products in such equipment or
applications and therefor e s uc h inclusion and/or use is at
the customer’s own risk .
Applications Applications that are described herein for
any of these products are for illustrative purposes only.
NXP Semiconductors makes no representation or
warranty that such applications will be suitable for the
specified use witho ut fu rth e r testing or modificati on .
Limiting values Stress above one or more limiting
values (as defined in the Absolute Maximum Ratings
System of IEC 60134) may cause permanent damage to
the device. Limiting values are stress ratin gs only and
operation of the device at these or any other cond itions
above those given in the Characteristics sections of this
document is not implied. Exposure to limiting values for
extended periods may affect device reliability.
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products are sold subject to the general terms and
conditions of commercial sale, as published at
http://www.nxp.com/profile/terms, including those
pertaining to warranty, intellectual property rights
infringement and limitation of liability, unless explicitly
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case of any incons istency or conflict betwee n information
in this document an d such terms and conditio ns, the latter
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that is open for accept ance or the grant, conv eyance or
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other industr i al or inte llectual property righ ts.
Export control This document as well as the item(s)
described herein may be subject to export control
regulations. Export might require a prior authorization from
national author ities.
Quick refer ence data The Quick reference data is an
extract of th e product data given in the Limiting values and
Characteristics sections of this document, and as such is
not complete, exhaus tive or legally binding.
NXP Semiconductors
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© NXP B.V. 2009
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Customer notification
This data sheet was changed to reflect the new company name NXP Semiconductors. No change s were
made to the content, except for the legal definitions and disclaimers.
Printed in The Netherlands 613514/01/pp7 Date of release: 2003 Jul 15 Document orde r number: 9397 750 11686