DISCRETE SEMICONDUCTORS DAWA SlAlleler PMST3904 NPN switching transistor Product specification Supersedes data of 1997 Jul 04 Philips Semiconductors VT 1999 Apr 22 PHILIPSPhilips Semiconductors Product specification NPN switching transistor PMST3904 FEATURES PINNING e Low current (max. 200 mA) PIN e Low voltage (max. 40 V). { DESCRIPTION base 2 emitter APPLICATIONS 3 collector e Telephony e Professional communication equipment. DESCRIPTION A 3 NPN switching transistor in a SOT323 plastic package. 3 PNP complement: PMST3906. MARKING MARKING CODE) *1A TYPE NUMBER PMST3904 Top view MAMO062 Note 1. *=-: Made in Hong Kong. * = t: Made in Malaysia. Fig.1 Simplified outline (SOT323) and symbol. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT Vcso collector-base voltage open emitter - 60 V VcEo collector-emitter voltage open base - 40 V VeBo emitter-base voltage open collector - 6 Vv Io collector current (DC) - 200 mA lom peak collector current - 300 mA IBu peak base current - 100 mA Prot total power dissipation Tamb < 25 C; note 1 - 200 mw Tstg storage temperature 65 +150 C Tj junction temperature - 150 C Tamb operating ambient temperature 65 +150 C Note 1. Transistor mounted on an FR4 printed-circuit board. 1999 Apr 22Philips Semiconductors Product specification NPN switching transistor PMST3904 THERMAL CHARACTERISTICS SYMBOL PARAMETER CONDITIONS VALUE UNIT Rih ja thermal resistance from junction to ambient note 1 625 K/W Note 1. Transistor mounted on an FR4 printed-circuit board. CHARACTERISTICS Tamb = 25 C unless otherwise specified. SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT IcBo collector cut-off current le = 0; Veg = 30 V - 50 nA le = 0; Veg = 30 V; T) = 150 C 10 HA lEBo emitter cut-off current Ic =0; Veg =6V - 50 nA hee DC current gain Voce =1 V; see Fig.2 Ic = 0.1 mA 60 - Ilc=1mA 80 - Ilc=10mA 100 300 Ic = 50 mA; note 1 60 - Ic = 100 mA; note 1 30 - VecEsat collector-emitter saturation voltage | lc = 10 mA; Ip =1 mA; note 1 - 200 mV Ic = 50 mA; |p = 5 mA; note 1 - 200 mV VBEsat base-emitter saturation voltage Ic = 10 mA; Ip = 1 mA; note 1 650 850 mV Ic = 50 mA; |p = 5 mA; note 1 - 950 mV Cy collector capacitance le =i, = 0; Vep = 5 V; f = 1 MHz - 4 pF Ce emitter capacitance Io = ig = 0; Veg = 500 mV; - 8 pF f= 1 MHz fr transition frequency Ic = 10 mA; Vce = 20 V; 300 - MHz f = 100 MHz F noise figure Io = 100 pA; Vee = 5 V3; Rg=1kQ = ]- 5 dB f = 10 Hz to 15.7 kHz Switching times (between 10% and 90% levels); see Fig.3 ton turn-on time Icon = 10 MA; IBon = 1 MA; - 65 ns tg delay time IBorf = 1 mA - 35 ns t rise time - 35 ns lott turn-off time - 240 ns ts storage time - 200 ns t fall time - 50 ns Note 1. Pulse test: tp < 300 us; 6 < 0.02. 1999 Apr 22 3Philips Semiconductors Product specification NPN switching transistor PMST3904 MGD834 160 hee pny i | aeons meme 120 80 \ N N N 40 0 10-2 10-1 1 10 102 108 Io (mA) Voe=1V. Fig.2 DC current gain; typical values. VBB Voc RB sles spa] , oscilloscope Vj DUT MLB826 Vi =5 V; T = 500 us; tp = 10 us; t = <3 ns. R1 = 56 Q; R2 = 2.5 kQ; Re = 3.9 kQ; Re = 270 Q. VeB =-1.9 V; Veco =3V. Oscilloscope input impedance Z; = 50 Q. Fig.3 Test circuit for switching times. 1999 Apr 22 4Philips Semiconductors Product specification NPN switching transistor PMST3904 PACKAGE OUTLINE Plastic surface mounted package; 3 leads SOT323 I | y | ! i 1 Q I i A I Ay 4 I , Y Cc 1 2 \ f J e | >} lef bool | 6 fS[w OLE] P [e] detail X 0 4 2mm bee scale DIMENSIONS (mm are the original dimensions) Ay UNIT A max bp c D E e ey He Lp Qa Vv w 14 0.4 | 025] 22 | 1.35 22 | 045 | 0.23 mm Jos | ' | o3 | oto] te | 115} 13 | 85 | 50 | ots | o13 | OF | F REFERENCES OUTLINE EUROPEAN VERSION IEC JEDEC EIAJ PROJECTION ISSUE DATE SOT323 SC-70 f--} 97-02-28 1999 Apr 22 5Philips Semiconductors Product specification NPN switching transistor PMST3904 DEFINITIONS Data sheet status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications. Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, itis advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. 1999 Apr 22 6Philips Semiconductors Product specification NPN switching transistor PMST3904 NOTES 1999 Apr 22 7Philips Semiconductors Argentina: see South America Australia: 34 Waterloo Road, NORTH RYDE, NSW 2113, Tel. +61 2 9805 4455, Fax. +61 2 9805 4466 Austria: Computerstr. 6, A-1101 WIEN, P.O. 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No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Printed in The Netherlands 115002/00/03/pp8 Philips Semiconductors Date of release: 1999 Apr 22 Document order number: 9397 750 05763 pet PHILIPS Lede