FEATURES
Small surface mounting type
High reliability
APPLICATIONS
Voltage stabilization
CONSTRUCTION
Silicon epitaxial planar
ABSOLUTE MAXIMUM RATINGS
TJ=25
Parameter
Power dissipation
Z-current
Junction temperature
Storage temperature range
MAXIMUM THERMAL RESISTANCE
TJ=25
Parameter
Junction ambient
ELECTRICAL CHARACTERISTICS
TJ=25
Parameter Type Symbol Min Typ Max Unit
Forward voltage VF1.5 V
~ 403 ~
IF=200mA
350 K/W
Test Conditions
I=4mm TL=constant
Test Conditions
RthJA
Symbol Value Unit
Tstg -55 ~ +200
MA
175
Iz Pv/Vz
Type Symbol Value Unit
BZV55C SERIES
I=4mm TL25Pv 500 Mw
REVERSE VOLTAGE - 2.4 to 188 VoltsZENER DIODE
Dimensions in inches and (millimeters)
Test Conditions
DL - 35
.055(1.4)
.063(1.6)
.020(0.5)
.012(0.3).012(0.3)
.020(0.5)
.146(3.7)
.130(3.3)
RATING AND CHARACTERISTIC CURVES
~ 404 ~
BZV55C SERIES
LEAD LENGTH (mm)
FIG. 1 - THERMAL RESISTANCE VS.LEAD LENGTH
THERM.RESIST.JUNCTION / AMBIENT(K/M)
500
400
300
200
100
0
0510 15 20
JUNCTION TEMPERATURE (°C)
FIG. 4 - TYPICAL CHANGE OF WORKING VOLTAGE VS.
JUNCTION TEMPERATURE
RELATIVE VOLTAGE CHANGE
1.3
1.2
1.1
1.0
0.9
0.8
-60 0 60 120 180 240
-4x10
-4/
K
-2x10
-4/
K
0
-4/
K
-4/
K
-4/
K
-4/
K
VZtn=Vzt/Vz(25°C)
TKyz=10x10
-4/
K
AMBIENT TEMPERATURE (°C)
TOTAL POWER DISSIPATION(mw)
FIG. 2 - TOTAL POWER DISSIPATIONVS.
AMBIENT TEMPERATURE
500
400
300
200
100
0
040 80 120 200
600
160
Z-VOLTAGE(V)
FIG.5 - TYPICAL CHANGE OF WORKING VOLTAGE VS.
JUNCTION TEMPERATURE
TEMPERATURE COEFFICIENT OF Vz (10
-4/K)
15
10
5
0
-5
010 20 30 40 50
Iz=5mA
FIG.3 -TYPICAL CHANGE OF WORKING VOLTAGE
UNDER OPERATING CONDITIONS AT Tamb=25°C
VOLTAGE CHAGNE(mA)
Z-VOLTAGE (V)
10
1000
1
100
0 5 10 15 20 25
TJ=25°C
Iz=5mA
DIODE CAPACITANCE (PF)
200
150
100
50
0
0
0510 15 20 25
FIG.6 - DIODE CAPACITANCE VS.Z-VOLTAGE
VR=2V
TJ=25°C
Z-VOLTAGE(V)
RATING AND CHARACTERISTIC CURVES
~ 405 ~
BZV55C SERIES
FORWARD VOLTAGE (V)
FIG.7 - FORWARD CURRENT VS.
FORWARD VOLTAGE
FORWARD CURRENT (mA)
T
J
=25°C
0.01
1
0.001
0.1
00.2 0.4 0.6 0.8 1.0
10
100
FIG.8 - Z-CURRENT VS. Z-VOLTAGE
Z-CURRENT (mA)
80
60
40
20
0
04 8 12 16 20
100
Ptot=500mW
Tamb=25°C
Z-VOLTAGE(V)
Z-VOLTAGE(V)
FIG.9 - Z-CURRENT VS. Z-VOLTAGE
Z-CURRENT (mA)
Ptot=500mW
Tamb=25°C
40
30
20
10
0
15 20 25 30 35
50
FIG.10 - DIFFERENTIAL Z-RESISTANCE
Vz VS. Z-VOLTAGE
DIFFERENTIAL-RESISTANCE
Ω
Z-VOLTAGE(V)
100
1
10
0 5 10 15 20 25
1000
Iz=1mA
5mA
10m
T
J
=25°C
FIG.11 - THERMAL RESPONSE
THERMAL RESISTANCE FOR PULSE COND. (K/W)
PULSE LENGTH (ms)
10
100
1
101 102
1000
100
10
-1
BZV55C SERIES
500mW ZENER DIODES/DO-35/DL-35(MINI MELF) OPRERATING AND STORAGE TEMPERATURE -55to+200
ZZT @ IZT ZZT @ IZK IR @ VR
Min Max mA Ohms Ohms mA μAVolts mA mA
BZV55C2V4 2.28 2.56 5.0 85 600 1.0 50 1.0 0.085 155
BZV55C2V7 2.50 2.90 5.0 85 600 1.0 10 1.0 0.080 135
BZV55C3V0 2.80 3.20 5.0 85 600 1.0 4.0 1.0 0.075 125
BZV55C3V3 3.10 3.50 5.0 85 600 1.0 2.0 1.0 0.070 115
BZV55C3V6 3.40 3.80 5.0 85 600 1.0 2.0 1.0 0.065 105
BZV55C3V9 3.70 4.10 5.0 85 600 1.0 2.0 1.0 0.060 95
BZV55C4V3 4.00 4.60 5.0 75 600 1.0 1.0 1.0 ±0.055 90
BZV55C4V7 4.40 5.00 5.0 60 600 1.0 0.5 1.0 ±0.030 85
BZV55C5V1 4.80 5.40 5.0 35 550 1.0 0.1 1.0 ±0.030 80
BZV55C5V6 5.20 6.00 5.0 25 450 1.0 0.1 1.0 0.038 70
BZV55C6V2 5.80 6.60 5.0 10 200 1.0 0.1 2.0 0.045 64
BZV55C6V8 6.40 7.20 5.0 8 150 1.0 0.1 3.0 0.050 58
BZV55C7V5 7.00 7.90 5.0 7 50 1.0 0.1 5.0 0.058 53
BZV55C8V2 7.70 8.70 5.0 7 50 1.0 0.1 6.2 0.062 74
BZV55C9V1 8.50 9.60 5.0 10 50 1.0 0.1 6.8 0.068 43
BZV55C10 9.40 10.6 5.0 15 70 1.0 0.1 7.5 0.075 40
BZV55C11 10.4 11.6 5.0 20 70 1.0 0.1 8.2 0.076 36
BZV55C12 11.4 12.7 5.0 20 90 1.0 0.1 9.1 0.077 32
BZV55C13 12.4 14.1 5.0 26 110 1.0 0.1 10 0.079 29
BZV55C15 13.8 15.6 5.0 30 110 1.0 0.1 11 0.082 27
BZV55C16 15.3 17.1 5.0 40 170 1.0 0.1 12 0.083 24
BZV55C18 16.8 19.1 5.0 50 170 1.0 0.1 13 0.085 21
BZV55C20 18.8 21.2 5.0 55 220 1.0 0.1 15 0.086 20
BZV55C22 20.8 23.3 5.0 55 220 1.0 0.1 16 0.087 18
BZV55C24 22.8 25.6 5.0 80 220 1.0 0.1 18 0.088 16
BZV55C27 25.1 28.9 5.0 80 220 1.0 0.1 20 0.090 14
BZV55C30 28.0 32.0 5.0 80 220 1.0 0.1 22 0.091 13
BZV55C33 31.0 35.0 5.0 80 220 1.0 0.1 24 0.092 12
BZV55C36 34.0 38.0 5.0 80 220 1.0 0.1 27 0.093 11
BZV55C39 37.0 41.0 2.5 90 500 0.5 0.1 30 0.094 10
BZV55C43 40.0 46.0 2.5 90 600 0.5 0.1 33 0.095 9.2
BZV55C47 44.0 50.0 2.5 110 700 0.5 0.1 36 0.095 8.5
BZV55C51 48.0 54.0 2.5 125 700 0.5 0.1 39 0.096 7.8
BZV55C56 52.0 60.0 2.5 135 1000 0.5 0.1 43 0.096 7.0
BZV55C62 58.0 66.0 2.5 150 1000 0.5 0.1 47 0.096 6.4
BZV55C68 64.0 72.0 2.5 200 1000 0.5 0.1 51 0.096 5.9
BZV55C75 70.0 80.0 2.5 250 1500 0.5 0.1 56 0.096 5.3
BZV55C82 77.0 87.0 2.5 300 2000 0.5 0.1 62 0.096 4.8
BZV55C91 85.0 96.0 1.0 450 5000 0.1 0.1 68 0.096 4.4
BZV55C100 94.0 106 1.0 450 5000 0.1 0.1 75 0.096 4.0
BZV55C110 104 116 1.0 600 5000 0.1 0.1 82 0.096 3.6
BZV55C120 114 127 1.0 800 5000 0.1 0.1 91 0.096 3.3
BZV55C130 124 141 1.0 1000 5000 0.1 0.1 100 0.096 3.0
BZV55C150 138 156 1.0 1200 5000 0.1 0.1 110 0.096 2.6
BZV55C160 153 171 1.0 1500 5000 0.1 0.1 120 0.096 2.5
BZV55C180 168 191 1.0 1800 5000 0.1 0.1 130 0.096 2.2
BZV55C188 188 212 1.0 2000 5000 0.1 0.1 150 0.096 2.0
Maximun
Surge
Current
Maximum
Regulation
Current
IZM
Maximum Zener
Impedance Maximum Reverse
Leakage Current
NOTE: 1. Normal Tolerance ±5%.
2. "BZV"Indicates MINI MELF Package.
TYPE
Nominal
Zener
Voltage
Vz@Izt
Test
Current
IZT
IZK
~ 406 ~