SEMIPACK®3
Thyristor / Diode Modules
SKKT 210
SKKH 210
Features
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Typical Applications
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SKKT 210, SKKH 210
1 11-08-2003 NOS © by SEMIKRON
http://store.iiic.cc/
Fig. 1L Power dissipation per thyristor vs. on-state current Fig. 1R Power dissipation per thyristor vs. ambient temp.
Fig. 2L Power dissipation per module vs. rms current Fig. 2R Power dissipation per module vs. case temp.
Fig. 3L Power dissipation of two modules vs. direct current Fig. 3R Power dissipation of two modules vs. case temp.
SKKT 210, SKKH 210
2 11-08-2003 NOS © by SEMIKRON
http://store.iiic.cc/
Fig. 4L Power dissipation of three modules vs. direct and rms current Fig. 4R Power dissipation of three modules vs. case temp.
Fig. 5 Recovered charge vs. current decrease Fig. 6 Transient thermal impedance vs. time
Fig. 7 On-state characteristics Fig. 8 Surge overload current vs. time
SKKT 210, SKKH 210
3 11-08-2003 NOS © by SEMIKRON
http://store.iiic.cc/
Fig. 9 Gate trigger characteristics
Dimensions in mm
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This technical information specifies semiconductor devices but promises no characteristics. No warranty or guarantee
expressed or implied is made regarding delivery, performance or suitability.
SKKT 210, SKKH 210
4 11-08-2003 NOS © by SEMIKRON
http://store.iiic.cc/
