SKKT 210, SKKH 210 SEMIPACK(R) 3 Thyristor / Diode Modules ./-0 .//0 .&/0 . 833 5#33 5$33 5=33 5833 %533 . 633 5%33 5<33 5"33 5633 %333 1+. 2 %53 + ) 5637 2 83 9'* -:: %53;36! -:: %53;5%! -:: %53;5%! -:: %53;5<! -:: %53;5<! -:: %53;5"! -:: %53;5"! -:: %53;56! -:: %53;56! -:: %53;%3! < -:: %53;%3! < %#33 %%33 -:: %53;%%! < -:: %53;%%! < Symbol Conditions Values Units 1+. 1& 5637 2 6$ )533* 9' 5";%33>7 2 #$ 9'7 ?% ; ?" %#3 )5"= * <%3 ; $$3 + + 1/0- 5";%33>7 2 #$ 9'7 @5 ; @# $%" ; # A <<3 + 1-0 ,B 2 %$ 9'7 53 ,B 2 5#3 9'7 53 ,B 2 %$ 9'7 6# 53 6$33 =$33 #"5333 + + +C C SKKT 210 1/0- 2 #$3 + )4 , * ,B 2 5#3 9'7 6# %65333 +C ,B 2 %$ 9'7 1 2 =$3 + ,B 2 5#3 9' ,B 2 5#3 9' 4 5$ 38$ 3" . . E 1&&7 1/& ,B 2 5#3 9'7 ./& 2 .//07 .&& 2 .&/0 4 $3 + ,B 2 %$ 9'7 1F 2 5 +7 F; 2 5 +;G 5 G .& 2 3"= A .&/0 % G );* ),;* H 1 ,B 2 5#3 9' ,B 2 5#3 9' ,B 2 5#3 9' ,B 2 %$ 9'7 ; 4 4 %$3 4 5333 $3 5$3 5$3 ; $33 +;G .;G G + 1 ,B 2 %$ 9' /F 2 ## E7 ; 4 #33 ; %333 + ! "# $#% .F 1F .F& ,B 2 %$ 9'7 ,B 2 %$ 9'7 ,B 2 5#3 9'7 # %33 4 3%$ . + . 1F& ,B 2 5#3 9'7 4 53 + Typical Applications &' / )BI* / )BI* / )BI* / )I * ,B 7 ; 5637 ; 5%37 ; ; 35< ; 33= 35$ ; 33=$ 35"$ ; 336# 33< ; 33% I <3 J 5#3 :;@ :;@ :;@ :;@ 9' ) * +' ) , * ) * . . 0 0 $3 7 $3 7 L ' SKKH 210 . .)D* Features 1) - 2) SKKT 1 53 I <3 75 75 ; 5 ; 5 J 5#3 9' #"33 ; #333 <633 ; <333 8 M 5$ N5* 8 M 5$ N%* $ A 865 .K .K O O ; C 4 =$3 -:: -:: + =# + =" -:: < SKKH 11-08-2003 NOS http://store.iiic.cc/ (c) by SEMIKRON SKKT 210, SKKH 210 Fig. 1L Power dissipation per thyristor vs. on-state current Fig. 1R Power dissipation per thyristor vs. ambient temp. Fig. 2L Power dissipation per module vs. rms current Fig. 2R Power dissipation per module vs. case temp. Fig. 3L Power dissipation of two modules vs. direct current Fig. 3R Power dissipation of two modules vs. case temp. 2 11-08-2003 NOS http://store.iiic.cc/ (c) by SEMIKRON SKKT 210, SKKH 210 Fig. 4L Power dissipation of three modules vs. direct and rms current Fig. 4R Power dissipation of three modules vs. case temp. Fig. 5 Recovered charge vs. current decrease Fig. 6 Transient thermal impedance vs. time Fig. 7 On-state characteristics Fig. 8 Surge overload current vs. time 3 11-08-2003 NOS http://store.iiic.cc/ (c) by SEMIKRON SKKT 210, SKKH 210 Fig. 9 Gate trigger characteristics Dimensions in mm ' + =" -:: ' + =# )-::* This technical information specifies semiconductor devices but promises no characteristics. No warranty or guarantee expressed or implied is made regarding delivery, performance or suitability. 4 11-08-2003 NOS http://store.iiic.cc/ (c) by SEMIKRON