©2002 Fairchild Semiconductor Corporation Rev. B1, July 2002
BSR15
PNP Epitaxial Si licon Transistor
Absolute Maximum Ratings* Ta=25°C unless otherwise noted
* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Symbol Parameter Value Units
VCEO Collector-Emitter Voltage -40 V
VCBO Collector-Base Voltage -60 V
VEBO Emitter-Base Voltage -5.0 V
ICCollector Current - Continuous -800 mA
TJ, TST Operating and Storage Junction Temperature Range -55 ~ +150 °C
BSR15
PNP General Purpose Amplifier
• This device designed for use as general purpose amplifier and
switches requiring collector currents to 500mA.
• Sourced from Process 63.
• See BCW68G for Characteristics.
SOT-23
1. Base 2. Emitter 3. Collector
1
2
3
Mark: T7
©2002 Fairchild Semiconductor Corporation Rev. B1, July 2002
BSR15
Electrical Characteristics Ta=25°C unless otherwise noted
Thermal Charac teris tics TA=25°C unless otherwise noted
* Device mounted on FR-4 PCB 40mm × 40mm × 1.5mm
Symbol Parameter Test Condition Min. Typ. Max. Units
Off Characteristics
BV(BR)CEO Collector-Emitter Breakdown Voltage IC = -10mA, IB = 0 -40 V
BV(BR)CBO Collector-Base Breakdown Voltage IC = -100µA, IE = 0 -60 V
BV(BR)EBO Emitter-Base Breakdown Voltage IE = -10µA, IC = 0 -5.0 V
ICBO Collect or Cut-off Current VCB = -50V
VCB = -50V, TA = 150°C-20
-20 nA
µA
ICEX Collector Cut-off Current VCE = -30V, VEB = -0.5V -50 nA
IBEX Reverse Base Current VCE = -30V, VEB = -3.0V -50 nA
On Characteristics
hFE DC Current Gain IC = -0.1mA, VCE = -10V
IC = -1.0mA, VCE = -10V
IC = -10mA, VCE= -10V
IC = -150mA, VCE = -10V
IC = -500mA, VCE = -10V
35
50
75
100
30 300
VCE(sat) Collector-Emitter Saturation Voltage IC = -150mA, IB = -15mA
IC = -500mA, IB = -50mA -0.4
-1.6 V
V
VBE(sat) Base-Emitter Saturation Voltage IC = -150mA, IB = -15mA
IC = -500mA, IB = -50mA -1.3
-2.6 V
V
Small Signal Characteristics
fTCurrent Gain Bandwidth Product IC = -50mA, VCE = -20V,
f = 100MHz, T A = 25°C200 MHz
Ccb Output Capacitance VCB = -10V, IE = 0, f = 1.0MHz 8.0 pF
Ceb Emitter-Base Capacitance VCB = -2.0V, IE = 0, f = 1.0MHz 30 pF
Switching Characteristics
ton Tu rn-On Time V CC = -30V, IC = -150mA,
IB1 = -15mA 45 ns
tdDelay Time 10 ns
trRise Time 40 ns
toff Turn- Off Time VCC = -30 V, IC = -150mA,
IB1 = IB2 = -15mA 100 ns
tsStorage Time 80 ns
tfFall Time 30 ns
Symbol Parameter Max. Units
PDTotal Device Dissipation
Derate above 25°C350
2.8 mW
mW/°C
RθJA Thermal Resistance, Junction to Ambient 357 °C/W
BSR15
Package Dimensions
0.96~1.14
0.12
0.03~0.10
0.38 REF
0.40 ±0.03
2.90 ±0.10
0.95 ±0.03 0.95 ±0.03
1.90 ±0.03 0.508REF
0.97REF 1.30 ±0.10 0.45~0.60
2.40 ±0.10
+0.05
–0.023
0.20 MIN
0.40 ±0.03
SOT-23
Dimensions in Millimeters
©2002 Fairchild Semiconductor Corporation Rev. B1, July 2002
©2002 Fairchild Semiconductor Corporation Rev. H7
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CORPORATION.
As used herein:
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2. A critical component is any component of a life support
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device or system, or to affect its safety or effectiveness.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification Product Status Definition
Advance Information Formative or In
Design This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
Preliminary First Production This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconduct or reserv es the right to make
changes at any time without notice in order to improve
design.
No Identification Needed Full Production This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
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Obsolete Not In Production This datasheet contains specifications on a product
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The datasheet is printed for reference information only.
FASTr™
FRFET™
GlobalOptoisolator™
GTO™
HiSeC™
I2C™
ISOPLANAR™
LittleFET™
MicroFET™
MicroPak™
MICROWIRE™
OPTOLOGIC®
OPTOPLANAR™
PACMAN™
POP™
Power247™
PowerTrench®
QFET™
QS™
QT Optoelectron ics™
Quiet Series™
SLIENT SWITCHER®
SMART START™
SPM™
Stealth™
SuperSOT™-3
SuperSOT™-6
SuperSOT™-8
SyncFET™
TinyLogic™
TruTranslation™
UHC™
UltraFET®
VCX™
ACEx™
Bottomless™
CoolFET™
CROSSVOLT™
DOME™
EcoSPARK™
E2CMOS™
EnSigna™
FACT™
FACT Quiet series™
FAST®
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER
NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD
DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT
OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT
RIGHTS, NOR THE RIGHTS OF OTHERS.
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is
not intended to be an exhaustive list of all such trademarks.
LIFE SUPPORT POLICY
FAIRCHILDS PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:
1. Life support devices or systems are devices or
systems which, (a) are intended for surgical implant into
the body, or (b) support or sustain life, or (c) whose
failure to perform when properly used in accordance
with instructions for use provided in the labeling, can be
reasonably expected to result in significant injury to the
user.
2. A critical component is any component of a life
support device or system whose failure to perform can
be reasonably expected to cause the failure of the life
support device or system, or to affect its safety or
effectiveness.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification Product Status Definition
Advance Information
Preliminary
No Identification Needed
Obsolete
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
Formative or
In Design
First Production
Full Production
Not In Production
ImpliedDisconnect
ISOPLANAR
LittleFET
MicroFET
MicroPak
MICROWIRE
MSX
MSXPro
OCX
OCXPro
OPTOLOGICâ
OPTOPLANAR
FACT
FACT Quiet Series
FASTâ
FASTr
FRFET
GlobalOptoisolator
GTO
HiSeC
I2C
Rev. I
ACEx
ActiveArray
Bottomless
CoolFET
CROSSVOLT
DOME
EcoSPARK
E2CMOSTM
EnSignaTM
Across the board. Around the world.
The Power Franchise
PACMAN
POP
Power247
PowerTrenchâ
QFET
QS
QT Optoelectronics
Quiet Series
RapidConfigure
RapidConnect
SILENT SWITCHERâ
SMART START
SPM
Stealth
SuperSOT-3
SuperSOT-6
SuperSOT-8
SyncFET
TinyLogic
TruTranslation
UHC
UltraFETâ
VCX