1
P ow er Transistors
2SB1250
Silicon PNP epitaxial planar type Darlington
For power amplification
Complementary to 2SD1890
■Features
●Optimum for 25W HiFi output
●High foward current transfer ratio hFE: 5000 to 30000
●Low collector to emitter saturation voltage VCE(sat): < –2.5V
●Full-pack package which can be installed to the heat sink with
one screw
■Absolute Maximum Ratings (TC=25˚C)
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Collector power
dissipation
Junction temperature
Storage temperature
Symbol
VCBO
VCEO
VEBO
ICP
IC
PC
Tj
Tstg
Ratings
–100
–80
–5
–6
–3
35
2
150
–55 to +150
Unit
V
V
V
A
A
W
˚C
˚C
■Electrical Characteristics (TC=25˚C)
Parameter
Collector cutoff current
Emitter cutoff current
Collector to emitter voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Base to emitter saturation voltage
Transition frequency
Turn-on time
Storage time
Fall time
Symbol
ICBO
ICEO
IEBO
VCEO
hFE1
hFE2*
VCE(sat)
VBE(sat)
fT
ton
tstg
tf
Conditions
VCB = –100V, IE = 0
VCE = –80V, IB = 0
VEB = –5V, IC = 0
IC = –30mA, IB = 0
VCE = –5V, IC = –1A
VCE = –5V, IC = –2A
IC = –2A, IB = –2mA
IC = –2A, IB = –2mA
VCE = –10V, IC = – 0.5A, f = 1MHz
IC = –2A, IB1 = –2mA, IB2 = 2mA,
VCC = –50V
min
–80
2000
5000
typ
20
2.0
0.7
0.7
max
–100
–100
–100
30000
–2.5
–3.0
Unit
µA
µA
µA
V
V
V
MHz
µs
µs
µs
T
C
=25°C
Ta=25°C
Unit: mm
Internal Connection
1:Base
2:Collector
3:Emitter
TO–220 Full Pack Package(a)
10.0±0.2
5.5±0.2
7.5±0.2
16.7±0.3 0.7±0.1
14.0±0.5
Solder Dip 4.0
0.5+0.2
–0.1
1.4±0.1 1.3±0.2
0.8±0.1
2.54±0.25
5.08±0.5
213
2.7±0.2
4.2±0.2
4.2±0.2
φ3.1±0.1
B
C
E
*hFE2 Rank classification
Rank Q P
hFE2
5000 to 15000 8000 to 30000
2
P ow er Transistors 2SB1250
PC—Ta I
C—V
CE VCE(sat) —I
C
VBE(sat) —I
ChFE —I
CCob —V
CB
ton, tstg, tf — ICArea of safe operation (ASO)
0 16040 12080 14020 10060
0
60
50
40
30
20
10
(1) T
C
=Ta
(2) With a 100 × 100 × 2mm
Al heat sink
(3) With a 50 × 50 × 2mm
Al heat sink
(4) Without heat sink
(P
C
=2W)
(1)
(2)
(3)
(4)
Ambient temperature Ta (˚C)
Collector power dissipation P
C
(W)
0 –12–10–8–2 –6–4
0
–6
–5
–4
–3
–2
–1
T
C
=25˚C
– 0.1mA
– 0.2mA
– 0.3mA
– 0.4mA
– 0.5mA
– 0.05mA
I
B
=–3mA
Collector to emitter voltage V
CE
(V)
Collector current I
C
(A)
– 0.1 –1 –10 –100– 0.3 –3 –30
– 0.1
–100
–10
–1
– 0.3
–3
–30
I
C
/I
B
=1000
25˚C
–25˚C
T
C
=100˚C
Collector current I
C
(A)
Collector to emitter saturation voltage V
CE(sat)
(V)
– 0.1 –1 –10 –100– 0.3 –3 –30
– 0.1
–100
–10
–1
– 0.3
–3
–30
I
C
/I
B
=1000
T
C
=–25˚C
25˚C
100˚C
Collector current I
C
(A)
Base to emitter saturation voltage V
BE(sat)
(V)
– 0.01
– 0.1 –1 –10
– 0.03
– 0.3 –3
10
30
100
300
1000
3000
10000
30000
100000
V
CE
=–5V
T
C
=100˚C 25˚C
–25˚C
Collector current I
C
(A)
Forward current transfer ratio h
FE
–1 –3 –10 –30 –100
1
1000
100
10
3
30
300
I
E
=0
f=1MHz
T
C
=25˚C
Collector to base voltage V
CB
(V)
Collector output capacitance C
ob
(pF)
0–8–2 –6–4
0.01
0.03
0.1
0.3
1
3
10
30
100
t
stg
t
on
t
f
Pulsed t
w
=1ms
Duty cycle=1%
I
C
/I
B
=1000
(–I
B1
=I
B2
)
V
CC
=–50V
T
C
=25˚C
Collector current I
C
(A)
Switching time t
on
,t
stg
,t
f
(µs)
–1 –10 –100 –1000–3 –30 –300
– 0.01
– 0.03
– 0.1
– 0.3
–1
–3
–10
–30
–100
t=1ms
I
CP
I
C
10ms
Non repetitive pulse
T
C
=25˚C
DC
Collector to emitter voltage V
CE
(V)
Collector current I
C
(A)
3
P ow er Transistors 2SB1250
Rth(t) —t
10
–4
1010
–3
10
–1
10
–2
110
3
10
2
10
4
0.1
1
10
100
10000
1000
Note: R
th
was measured at Ta=25˚C and under natural convection.
(1) P
T
=10V × 0.2A (2W) and without heat sink
(2) P
T
=10V × 1.0A (10W) and with a 100 × 100 × 2mm Al heat sink
(1)
(2)
Time t (s)
Thermal resistance R
th
(t) (˚C/W)
