©2002 Fairchild Semiconductor Corporation Rev. A1, August 2002
BCW66G
Absolute Maximum Ratings * TC=25°C unless otherwise noted
* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1. These ratings are based on a maximum junction temperature of 150degrees C.
2. These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Electrical Characteristics TC=25°C unless otherwise noted
Symbol Parameter Value Units
VCEO Collector-Emitter Voltage 45 V
VCBO Collector-Base Voltage 75 V
VEBO Emitter-Base Voltage 5 V
ICCollector Current - Continuous 1 A
TJ, TSTG Operating and Storage Junction Temperature Range - 55 ~ +150 °C
Symbol Paramet e r Test Condition Min. Typ. Max. Units
BVCBO Collector-Base Breakdown Voltage IC = 10µA75V
BVCEO Collector-Emitter Breakdown Voltage IC = 10mA 45 V
BVEBO Emitter-Base Breakdown Voltage IE = 10µA5V
ICES Collect or Cut-off Current VCB = 45V, IE = 0
VCB = 45V, IE = 0 TA = 150°C20 nA
20 µA
IEBO Emitter Cut-off Current VEB = 4V 20 nA
hFE DC Current Gain VCE = 10V, IC = 100µA
VCE = 1V, IC = 10mA
VCE = 1V, IC = 100mA
VCE = 2V, IC = 500mA
50
110
160
60 400
VCE(sat) Collector-Emitter Saturation Voltage IC = 100mA, IB = 10mA
IC = 500mA, IB = 50mA 0.3
0.7 V
VBE(sat) Base-Emitter Saturation Voltage IC = 500mA, IB = 50mA 2 V
Cobo Output Capacitance VCB = 10V, f = 1M Hz 12 pF
Cibo Input Capacitance VEB = 0.5V, f = 1MHz 80 pF
fTCurrent gain Bandwidth Product VCE = 10V, IC = 20mA,
f = 100MHz 100 MHz
NF Noise Figure VCE = 5V, IC = 0.2mA, RS = 1kΩ,
f = 1KHz, BW = 200Hz 10 dB
ton Tu rn-On Time IB1 = IB2 = 15m A
IC = 150mA, RL = 150Ω100 ns
toff Turn-Off Time 400
BCW66G
NPN General Purpose Amplifier
• This device is designed for general purpose amplifier applications at
collector currents to 500mA.
• Sourced from process 13.
SOT-23
1. Base 2. Emitter 3. Collector
1
2
3
Mark: EG
©2002 Fairchild Semiconductor Corporation Rev. A1, August 2002
BCW66G
Thermal Characteris ti cs
Symbol Parameter Min. Typ. Max. Units
PDTotal Device Dissipation
Derate above 25°C350
2.8 mW
mW/°C
RθJA Thermal Resistance, Junction to Ambient 357 °C/W
Package Dimensions
BCW66G
0.96~1.14
0.12
0.03~0.10
0.38 REF
0.40 ±0.03
2.90 ±0.10
0.95 ±0.03 0.95 ±0.03
1.90 ±0.03 0.508REF
0.97REF 1.30 ±0.10 0.45~0.60
2.40 ±0.10
+0.05
–0.023
0.20 MIN
0.40 ±0.03
SOT-23
Dimensions in Millimeters
©2002 Fairchild Semiconductor Corporation Rev. A1, August 2002
©2002 Fairchild Semiconductor Corporation Rev. I1
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