IRF9640, SiHF9640 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS (V) * * * * * * * - 200 RDS(on) () VGS = - 10 V 0.50 Qg (Max.) (nC) 44 Qgs (nC) 7.1 Qgd (nC) 27 Configuration Single S RoHS* COMPLIANT Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220AB package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 W. The low thermal resistance and low package cost of the TO-220AB contribute to its wide acceptance throughout the industry. G D Available DESCRIPTION TO-220AB G Dynamic dV/dt Rating Repetitive Avalanche Rated P-Channel Fast Switching Ease of Paralleling Simple Drive Requirements Compliant to RoHS Directive 2002/95/EC S D P-Channel MOSFET ORDERING INFORMATION Package TO-220AB IRF9640PbF SiHF9640-E3 IRF9640 SiHF9640 Lead (Pb)-free SnPb ABSOLUTE MAXIMUM RATINGS (TC = 25 C, unless otherwise noted) PARAMETER SYMBOL LIMIT Drain-Source Voltage VDS - 200 V Gate-Source Voltage VGS 20 V Continuous Drain Current VGS at - 10 V TC = 25 C TC = 100 C Pulsed Drain Currenta ID UNIT - 11 - 6.8 A IDM - 44 1.0 W/C EAS 700 mJ Currenta IAR - 11 A Repetitive Avalanche Energya EAR 13 mJ Linear Derating Factor Single Pulse Avalanche Energyb Repetitive Avalanche Maximum Power Dissipation TC = 25 C Peak Diode Recovery dV/dtc Operating Junction and Storage Temperature Range Soldering Recommendations (Peak Temperature) Mounting Torque for 10 s 6-32 or M3 screw PD 125 W dV/dt - 5.0 V/ns TJ, Tstg - 55 to + 150 300d C 10 lbf * in 1.1 N*m Notes a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11). b. VDD = - 50 V, starting TJ = 25 C, L = 8.7 mH, Rg = 25 , IAS = - 11 A (see fig. 12). c. ISD - 11 A, dI/dt 150 A/s, VDD VDS, TJ 150 C. d. 1.6 mm from case. * Pb containing terminations are not RoHS compliant, exemptions may apply Document Number: 91086 S11-0513-Rev. B, 21-Mar-11 www.vishay.com 1 This datasheet is subject to change without notice. THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 IRF9640, SiHF9640 Vishay Siliconix THERMAL RESISTANCE RATINGS PARAMETER SYMBOL TYP. MAX. Maximum Junction-to-Ambient RthJA - 62 Case-to-Sink, Flat, Greased Surface RthCS 0.50 - Maximum Junction-to-Case (Drain) RthJC - 1.0 UNIT C/W SPECIFICATIONS (TJ = 25 C, unless otherwise noted) PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT Static Drain-Source Breakdown Voltage VDS Temperature Coefficient VDS VGS = 0 V, ID = - 250 A - 200 - - V VDS/TJ Reference to 25 C, ID = - 1 mA - -0.2 - V/C VGS(th) VDS = VGS, ID = - 250 A - 2.0 - - 4.0 V Gate-Source Leakage IGSS VGS = 20 V - - 100 nA Zero Gate Voltage Drain Current IDSS Gate-Source Threshold Voltage VDS = - 200 V, VGS = 0 V - - - 100 VDS = - 160 V, VGS = 0 V, TJ = 125 C - - - 500 ID = - 6.6 Ab A - - 0.50 gfs VDS = - 50 V, ID = - 6.6 Ab 4.1 - - S Input Capacitance Ciss VGS = 0 V, - 1200 - - 370 - Drain-Source On-State Resistance Forward Transconductance RDS(on) VGS = - 10 V Dynamic Output Capacitance Coss VDS = - 25 V, Reverse Transfer Capacitance Crss f = 1.0 MHz, see fig. 5 Total Gate Charge Qg Gate-Source Charge Qgs VGS = - 10 V ID = - 11 A, VDS = - 160 V, see fig. 6 and 13b - 81 - - - 44 - - 7.1 Gate-Drain Charge Qgd - - 27 Turn-On Delay Time td(on) - 14 - Rise Time Turn-Off Delay Time pF nC tr VDD = - 100 V, ID = - 11 A - 43 - td(off) Rg = 9.1 , RD = 8.6 , see fig. 10b - 39 - - 38 - - 4.5 - - 7.5 - - - - 11 - - - 44 - - -5 V - 250 300 ns - 2.9 3.6 C Fall Time tf Internal Drain Inductance LD Internal Source Inductance LS Between lead, 6 mm (0.25") from package and center of die contact D ns nH G S Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current IS Pulsed Diode Forward Currenta ISM Body Diode Voltage VSD Body Diode Reverse Recovery Time trr Body Diode Reverse Recovery Charge Qrr Forward Turn-On Time ton MOSFET symbol showing the integral reverse p - n junction diode D A G S TJ = 25 C, IS = - 11 A, VGS = 0 Vb TJ = 25 C, IF = - 11 A, dI/dt = 100 A/sb Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD) Notes a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11). b. Pulse width 300 s; duty cycle 2 %. www.vishay.com 2 Document Number: 91086 S11-0513-Rev. B, 21-Mar-11 This datasheet is subject to change without notice. THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 IRF9640, SiHF9640 Vishay Siliconix TYPICAL CHARACTERISTICS (25 C, unless otherwise noted) VGS - 15 V - 10 V - 8.0 V - 7.0 V - 6.0 V - 5.5 V - 5.0 V Bottom - 4.5 V 101 - 4.5 V 100 20 s Pulse Width VDS = - 50 V 101 4 - VDS, Drain-to-Source Voltage (V) - ID, Drain Current (A) - 4.5 V 100 91086_02 20 s Pulse Width TC = 150 C 100 101 - VDS, Drain-to-Source Voltage (V) Fig. 2 - Typical Output Characteristics, TC = 150 C Document Number: 91086 S11-0513-Rev. B, 21-Mar-11 6 7 8 9 10 Fig. 3 - Typical Transfer Characteristics RDS(on), Drain-to-Source On Resistance (Normalized) VGS - 15 V - 10 V - 8.0 V - 7.0 V - 6.0 V - 5.5 V - 5.0 V Bottom - 4.5 V Top 5 - VGS, Gate-to-Source Voltage (V) 91086_03 Fig. 1 - Typical Output Characteristics, TC = 25 C 101 150 C 25 C 101 20 s Pulse Width TC = 25 C 100 100 91086_01 - ID, Drain Current (A) - ID, Drain Current (A) Top 91086_04 3.0 2.5 ID = - 11 A VGS = - 10 V 2.0 1.5 1.0 0.5 0.0 - 60 - 40 - 20 0 20 40 60 80 100 120 140 160 TJ, Junction Temperature (C) Fig. 4 - Normalized On-Resistance vs. Temperature www.vishay.com 3 This datasheet is subject to change without notice. THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 IRF9640, SiHF9640 2400 VGS = 0 V, f = 1 MHz Ciss = Cgs + Cgd, Cds Shorted Crss = Cgd Coss = Cds + Cgd Capacitance (pF) 2000 1600 Ciss 1200 800 Coss 400 Crss - ISD, Reverse Drain Current (A) Vishay Siliconix 25 C 150 C 100 VGS = 0 V 10-1 0 100 0.0 101 - VDS, Drain-to-Source Voltage (V) 91086_05 20 Operation in this area limited by RDS(on) 5 - ID, Drain Current (A) VDS = - 160 V VDS = - 40 V 12 8 4 0 91086_06 10 20 30 40 50 100 s 10 1 ms 5 TC = 25 C TJ = 150 C Single Pulse QG, Total Gate Charge (nC) Fig. 6 - Typical Gate Charge vs. Drain-to-Source Voltage www.vishay.com 4 1 60 1 91086_08 10 s 2 2 For test circuit see figure 13 0 5.0 4.0 - VSD, Source-to-Drain Voltage (V) 102 VDS = - 100 V 3.0 Fig. 7 - Typical Source-Drain Diode Forward Voltage ID = - 11 A 16 2.0 1.0 91086_07 Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage - VGS, Gate-to-Source Voltage (V) 101 2 5 10 2 5 10 ms 102 2 5 103 - VDS, Drain-to-Source Voltage (V) Fig. 8 - Maximum Safe Operating Area Document Number: 91086 S11-0513-Rev. B, 21-Mar-11 This datasheet is subject to change without notice. THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 IRF9640, SiHF9640 Vishay Siliconix RD VDS VGS 10 - ID, Drain Current (A) D.U.T. RG 12 +VDD - 10 V Pulse width 1 s Duty factor 0.1 % 8 Fig. 10a - Switching Time Test Circuit 6 4 VDS 10 % 2 td(on) td(off) tf tr 0 25 50 75 100 125 150 TC, Case Temperature (C) 91086_09 90 % VGS Fig. 9 - Maximum Drain Current vs. Case Temperature Fig. 10b - Switching Time Waveforms Thermal Response (ZthJC) 10 1 D = 0.50 PDM 0.20 0.1 0.10 0.05 t1 t2 Single Pulse (Thermal Response) 0.02 0.01 Notes: 1. Duty Factor, D = t1/t2 2. Peak Tj = PDM x ZthJC + TC 10-2 10-5 91086_11 10-4 10-3 10-2 0.1 1 10 t1, Rectangular Pulse Duration (s) Fig. 11 - Maximum Effective Transient Thermal Impedance, Junction-to-Case Document Number: 91086 S11-0513-Rev. B, 21-Mar-11 www.vishay.com 5 This datasheet is subject to change without notice. THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 IRF9640, SiHF9640 Vishay Siliconix IAS L VDS RG VDS + VDS D.U.T VDD IAS - 10 V tp tp 0.01 V(BR)DSS Fig. 12a - Unclamped Inductive Test Circuit Fig. 12b - Unclamped Inductive Waveforms EAS, Single Pulse Energy (mJ) 1600 ID - 4.9 A - 7.0 A Bottom - 11 A Top 1200 800 400 VDD = - 50 V 0 25 91086_12c 50 75 100 125 150 Starting TJ, Junction Temperature (C) Fig. 12c - Maximum Avalanche Energy vs. Drain Current Current regulator Same type as D.U.T. 50 k QG - 10 V 12 V 0.2 F 0.3 F QGS - QGD D.U.T. VG + VDS VGS - 3 mA Charge IG ID Current sampling resistors Fig. 13a - Basic Gate Charge Waveform www.vishay.com 6 Fig. 13b - Gate Charge Test Circuit Document Number: 91086 S11-0513-Rev. B, 21-Mar-11 This datasheet is subject to change without notice. THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 IRF9640, SiHF9640 Vishay Siliconix Peak Diode Recovery dV/dt Test Circuit D.U.T. + Circuit layout considerations * Low stray inductance * Ground plane * Low leakage inductance current transformer + - - Rg + * dV/dt controlled by Rg * ISD controlled by duty factor "D" * D.U.T. - device under test + - VDD Note * Compliment N-Channel of D.U.T. for driver Driver gate drive P.W. Period D= P.W. Period VGS = - 10 Va D.U.T. lSD waveform Reverse recovery current Body diode forward current dI/dt D.U.T. VDS waveform Diode recovery dV/dt Re-applied voltage Inductor current VDD Body diode forward drop Ripple 5 % ISD Note a. VGS = - 5 V for logic level and - 3 V drive devices Fig. 14 - For P-Channel Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see http://www.vishay.com/ppg?91086. Document Number: 91086 S11-0513-Rev. B, 21-Mar-11 www.vishay.com 7 This datasheet is subject to change without notice. THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Package Information www.vishay.com Vishay Siliconix TO-220AB MILLIMETERS A E F D H(1) Q OP 3 2 L(1) 1 M* L b(1) INCHES DIM. MIN. MAX. MIN. MAX. A 4.25 4.65 0.167 0.183 b 0.69 1.01 0.027 0.040 b(1) 1.20 1.73 0.047 0.068 c 0.36 0.61 0.014 0.024 D 14.85 15.49 0.585 0.610 E 10.04 10.51 0.395 0.414 e 2.41 2.67 0.095 0.105 e(1) 4.88 5.28 0.192 0.208 F 1.14 1.40 0.045 0.055 H(1) 6.09 6.48 0.240 0.255 J(1) 2.41 2.92 0.095 0.115 L 13.35 14.02 0.526 0.552 0.150 L(1) 3.32 3.82 0.131 OP 3.54 3.94 0.139 0.155 Q 2.60 3.00 0.102 0.118 ECN: X12-0208-Rev. N, 08-Oct-12 DWG: 5471 Notes * M = 1.32 mm to 1.62 mm (dimension including protrusion) Heatsink hole for HVM * Xi'an and Mingxin actual photo C b e J(1) e(1) Revison: 08-Oct-12 Document Number: 71195 1 For technical questions, contact: hvm@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. 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Material Category Policy Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as RoHS-Compliant fulfill the definitions and restrictions defined under Directive 2011/65/EU of The European Parliament and of the Council of June 8, 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment (EEE) - recast, unless otherwise specified as non-compliant. Please note that some Vishay documentation may still make reference to RoHS Directive 2002/95/EC. We confirm that all the products identified as being compliant to Directive 2002/95/EC conform to Directive 2011/65/EU. Revision: 12-Mar-12 1 Document Number: 91000