BSS138DW
Document number: DS30203 Rev. 12 - 2 1 of 5
www.diodes.com September 2009
© Diodes Incorporated
BSS138DW
DUAL N-CHANNEL ENHANCEMENT MODE FIEL D EFFECT TRANSISTOR
Features
• Low On-Resistance
• Low Gate Threshold Voltage
• Low Input Capacitance
• Fast Switching Speed
• Available in Lead Free/RoHS Compliant Version (Note 4)
• Qualified to AEC-Q101 Standards for High Reliability
• "Green" Device (Notes 5 and 6)
Mechanical Data
• Case: SOT-363
• Case Material: Molded Plastic. “Green” Molding Compound
(Note 6). UL Flammability Classification Rating 94V-0
• Moisture Sensitivity: Level 1 per J-STD-020
• Terminals: Matte Tin Finish annealed over Alloy 42 leadframe
(Lead Free Plating) Solderable per MIL-STD-202, Method 208
• Terminal Connections: See Diagram
• Marking Information: See Page 3
• Ordering Information: See Page 3
• Weight: 0.006 grams (approximate)
Maximum Ratings @TA = 25°C unless otherwise specified
Characteristic Symbol BSS138DW Units
Drain-Source Voltage VDSS 50 V
Drain-Gate Voltage (Note 3) VDGR 50 V
Gate-Source Voltage Continuous VGSS ±20 V
Drain Current (Note 1) Continuous ID 200 mA
Thermal Characteristics @TA = 25°C unless otherwise specified
Characteristic Symbol BSS138DW Units
Total Power Dissipation (Note 1) PD 200 mW
Thermal Resistance, Junction to Ambient R
JA 625 °C/W
Operating and Storage Temperature Range TJ, TSTG -55 to +150 °C
Electrical Characteristics @TA = 25°C unless otherwise specified
Characteristic Symbol Min Typ Max Unit Test Condition
OFF CHARACTERISTICS (Note 2)
Drain-Source Breakdown Voltage BVDSS 50 75 ⎯ V VGS = 0V, ID = 250μA
Zero Gate Voltage Drain Current IDSS ⎯ ⎯ 0.5 µA VDS = 50V, VGS = 0V
Gate-Body Leakage IGSS ⎯ ⎯ ±100 nA VGS = ±20V, VDS = 0V
ON CHARACTERISTICS (Note 2)
Gate Threshold Voltage VGS
th
0.5 1.2 1.5 V VDS = VGS, ID = 250μA
Static Drain-Source On-Resistance RDS
ON
⎯ 1.4 3.5 Ω VGS = 10V, ID = 0.22A
Forward Transconductance gFS 100 ⎯ ⎯ mS VDS =25V, ID = 0.2A, f = 1.0KHz
DYNAMIC CHARACTERISTICS
Input Capacitance Ciss ⎯ ⎯ 50 pF VDS = 10V, VGS = 0V, f = 1.0MHz
Output Capacitance Coss ⎯ ⎯ 25 pF
Reverse Transfer Capacitance Crss ⎯ ⎯ 8.0 pF
SWITCHING CHARACTERISTICS
Turn-On Delay Time tD
ON
⎯ ⎯ 20 ns VDD = 30V, ID = 0.2A,
RGEN = 50Ω
Turn-Off Delay Time tD
OFF
⎯ ⎯ 20 ns
Notes: 1. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout document AP02001, which
can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.
2. Short duration pulse test used to minimize self-heating effect.
3. RGS ≤ 20KΩ.
4. No purposefully added lead.
5. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.
6. Product manufactured with Date Code UO (week 40, 2007) and newer are built with Green Molding Compound. Product manufactured prior to Date
Code UO are built with Non-Green Molding Compound and may contain Halogens or Sb2O3 Fire Retardants.
SOT-363
TOP VIEW Internal Schematic
TOP VIEW
S
1
D
1
D
2
S
2
G
1
G
2