2N2270
NPN SILICON TRANSISTOR DESCRIPTION:
The CENTRAL SEMICONDUCTOR 2N2270 is a NPN
silicon transistor, mounted in a hermetically sealed
package, designed for general purpose amplifier
applications.
MARKING: FULL PART NUMBER
MAXIMUM RATINGS: (TA=25°C unless otherwise noted)
SYMBOL UNITS
Collector-Base Voltage VCBO 60 V
Collector-Emitter Voltage VCER 60 V
Collector-Emitter Voltage VCEO 45 V
Emitter-Base Voltage VEBO 7.0 V
Continuous Collector Current IC 1.0 A
Power Dissipation PD 1.0 W
Power Dissipation (TC=25°C) PD 5.0 W
Operating and Storage Junction Temperature TJ, Tstg -65 to +200 °C
Thermal Resistance ΘJA 175 °C/W
Thermal Resistance ΘJC 35 °C/W
ELECTRICAL CHARACTERISTICS: (TC=25°C unless otherwise noted)
SYMBOL TEST CONDITIONS MIN MAX UNITS
ICBO V
CB=60V 50 nA
ICBO V
CB=60V, (TC=150°C) 50 A
IEBO V
EB=5.0V 100 nA
BVCBO I
C=100µA 60 V
BVCER I
C=100mA, RBE=10 60 V
BVCEO I
C=100mA 45 V
BVEBO I
E=100µA 7.0 V
VCE(SAT) I
C=150mA, IB=15mA 0.9 V
VBE(SAT) I
C=150mA, IB=15mA 1.2 V
hFE V
CE=10V, IC=1.0mA 30
hFE V
CE=10V, IC=150mA 50 200
hfe V
CE=10V, IC=5.0mA, f=1.0kHz 50 275
fT V
CE=10V, IC=50mA 100 MHz
Cob V
CB=10V, IE=0 15 pF
Cib V
BE=0.5V, IC=0 80 pF
NF VCE=10V, IC=0.3mA, f=1.0kHz,
R
G=1.0k, BW=1.0Hz 10 dB
TO-39 CASE
R0 (17-August 2012)
www.centralsemi.com
2N2270
NPN SILICON TRANSISTOR
TO-39 CASE - MECHANICAL OUTLINE
LEAD CODE:
1) Emitter
2) Base
3) Collector
MARKING: FULL PART NUMBER
www.centralsemi.com
R0 (17-August 2012)
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(001)
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when ordering (example: 2N2222A PBFREE).
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