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Document number: DS35537 Rev. 7 - 2
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NEW PRODUCT
ADVANCE INFORMATION
S
2
D
2
Q
1
Q
2
D
1
S
1
G
2
G
1
COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET
Product Summary
Device V(BR)DSS R
DS(ON) max ID max
TA = +25°C
Q1 20V 0.5 @ VGS = 4.5V 1030mA
0.9 @ VGS = 1.8V 740mA
Q2 -20V
1.0 @ VGS = -4.5V -700mA
2.0 @ VGS = -1.8V -460mA
Description
This new generation MOSFET has been designed to minimize the
on-state resistance (RDS(ON)) and yet maintain superior switching
performance, making it ideal for high efficiency power management
applications.
Applications
Power management functions
Battery Operated Systems and Solid-State Relays
Load switch
Features and Benefits
Low On-Resistance
Low Gate Threshold Voltage VGS(th) <1V
Low Input Capacitance
Fast Switching Speed
Low Input/Output Leakage
Complementary Pair MOSFET
Ultra-Small Surface Mount Package
ESD Protected Gate to 2kV HBM
Lead-Free Finish; RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
Mechanical Data
Case: SOT563
Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminal Connections: See Diagram
Terminals: Finish – Matte Tin annealed over Copper
leadframe. Solderable per MIL-STD-202, Method 208
Weight: 0.003 grams (approximate)
Ordering Information (Note 4)
Part Number Case Packaging
DMC2400UV-7 SOT563 3000/Tape & Reel
DMC2400UV-13 SOT563 10000/Tape & Reel
Notes: 1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. All applicable RoHS exemptions applied.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
Marking Information
Date Code Key
Year 2011 2012 2013 2014 2015 2016 2017
Code Y Z A B C D E
Month Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec
Code 1 2 3 4 5 6 7 8 9 O N D
ESD PROTECTED TO 2kV
Top View Bottom View Equivalent Circuit
CA3 = Product Type Marking Code
YM = Date Code Marking
Y = Year (ex: Y = 2011)
M = Month (ex: 9 = September)
SOT563
Top View
e3
Green
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Maximum Ratings - Q1 N-CHANNEL (@TA = +25°C, unless otherwise specified.)
Characteristic Symbol Value Units
Drain-Source Voltage VDSS 20 V
Gate-Source Voltage VGSS ±12 V
Continuous Drain Current (Note 6) VGS = 4.5V
Steady
State
TA = +25°C
TA = +70°C ID 1030
800 mA
t<10s TA = +25°C
TA = +70°C ID 1150
900 mA
Continuous Drain Current (Note 6) VGS = 1.8V
Steady
State
TA = +25°C
TA = +70°C ID 740
570 mA
t<10s TA = +25°C
TA = +70°C ID 870
700 mA
Pulsed Drain Current (10s pulse, duty cycle = 1%) IDM 3 A
Maximum Body Diode Continuous Current IS 800 mA
Maximum Ratings - Q2 P-CHANNEL (@TA = +25°C, unless otherwise specified.)
Characteristic Symbol Value Units
Drain-Source Voltage VDSS -20 V
Gate-Source Voltage VGSS ±8 V
Continuous Drain Current (Note 6) VGS = -4.5V
Steady
State
TA = +25°C
TA = +70°C ID -700
-550 mA
t<10s TA = +25°C
TA = +70°C ID -820
-640 mA
Continuous Drain Current (Note 6) VGS = -1.8V
Steady
State
TA = +25°C
TA = +70°C ID -460
-350 mA
t<10s TA = +25°C
TA = +70°C ID -550
-420 mA
Pulsed Drain Current (10s pulse, duty cycle = 1%) IDM -2 A
Maximum Body Diode Continuous Current IS -800 mA
Thermal Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic Symbol Value Units
Total Power Dissipation (Note 5) PD 0.45 W
Thermal Resistance, Junction to Ambient (Note 5) Steady state RJA 281 °C/W
t<10s 210 °C/W
Total Power Dissipation (Note 6) PD 1 W
Thermal Resistance, Junction to Ambient (Note 6) Steady state RJA 129 °C/W
t<10s 97 °C/W
Operating and Storage Temperature Range TJ, TSTG -55 to +150 °C
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Electrical Characteristics - Q1 N-CHANNEL (@TA = +25°C, unless otherwise specified.)
Characteristic Symbol Min Typ Max Unit Test Condition
OFF CHARACTERISTICS (Note 7)
Drain-Source Breakdown Voltage BVDSS 20 — — V
VGS = 0V, ID = 1mA
Zero Gate Voltage Drain Current TJ = +25°C IDSS — —
100 nA
VDS = 20V, VGS = 0V
Gate-Source Leakage IGSS
— — ±1 µA VGS = ±5V, VDS = 0V
— —
±4.0 VGS = ±8V, VDS = 0V
ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage VGS(th) 0.5 — 0.9 V
VDS = VGS, ID = 250A
Static Drain-Source On-Resistance RDS(ON)
— 0.3 0.48
VGS = 5.0V, ID = 200mA
— 0.35 0.5 VGS = 4.5V, ID = 200mA
— 0.45 0.7 VGS = 2.5V, ID = 200mA
— 0.55 0.9 VGS = 1.8V, ID = 100mA
— 0.65 1.5 VGS = 1.5V, ID = 50mA
— 2 — VGS = 1.2V, ID = 1mA
Forward Transfer Admittance |Yfs| — 1.4 — S VDS = 3V, ID = 200mA
Diode Forward Voltage VSD — 0.7 1.2 V
VGS = 0V, IS = 500mA,
DYNAMIC CHARACTERISTICS (Note 8)
Input Capacitance Ciss — 37.1 —
pF VDS = 10V, VGS = 0V,
f = 1.0MHz
Output Capacitance Coss — 6.5 —
Reverse Transfer Capacitance Crss — 4.8 —
Gate Resistance Rg — 68 — VDS = 0V, VGS = 0V,
Total Gate Charge Qg — 0.5 —
nC VGS = 4.5V, VDS = 10V,
ID = 250mA
Gate-Source Charge Qgs — 0.07 —
Gate-Drain Charge Qgd — 0.1 —
Turn-On Delay Time tD(on) — 4.06 —
ns
VDD = 10V, VGS = 4.5V,
RL = 47, RG = 10,
ID = 200mA
Turn-On Rise Time tr — 7.28 —
Turn-Off Delay Time tD(off) — 13.74 —
Turn-Off Fall Time tf — 10.54 —
Notes: 5. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout.
6. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate.
7. Short duration pulse test used to minimize self-heating effect.
8. Guaranteed by design. Not subject to product testing.
0
0.5
1.0
1.5
2.0
01 2 345
Fig. 1 Typical Output Characteristics
V , DRAIN-SOURCE VOLTAGE (V)
DS
I, D
R
AI
N
C
U
R
R
E
N
T
(A)
D
V = 1.5V
GS
V = 2.0V
GS
V = 2.5V
GS
V = 4.5V
GS
V = 1.2V
GS
V = 1.8V
GS
0
0.5
1.0
1.5
0 0.5 1 1.5 2 2.5 3
I, D
R
AIN
C
U
R
R
EN
T
(A)
D
Fig. 2 Typical Transfer Characteristics
V , GATE SOURCE VOLTAGE (V)
GS
V = 5V
DS
T = -55°C
A
T = 25°C
A
T = 125°C
A
T = 150°C
A
T = 85°C
A
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0
0.4
0.8
1.2
1.6
2.0
0 0.4 0.8 1.2 1.6 2
Fig. 3 Typical On-Resistance
vs. Drain Current and Gate Voltage
I , DRAIN-SOURCE CURRENT (A)
D
R , DRAIN-SOURCE ON-RESISTANCE ( )
DS(ON)
V = 1.8V
GS
V = 4.5V
GS
V = 2.5V
GS
V = 1.5V
GS
V = 5.0V
GS
0
0.2
0.4
0.6
0.8
0 0.4 0.8 1.2 1.6
I , DRAIN CURRENT (A)
Fig. 4 Typical Drain-Source On-Resistance
vs. Drain Current and Temperature
D
R
, D
R
AI
N
-S
O
U
R
C
E
O
N
-
R
ESIS
T
A
N
C
E ( )
DS(ON)
T = -55°C
A
T = 25°C
A
T = 85°C
A
T = 125°C
A
T = 150°C
A
V = 4.5V
GS
Fig. 5 On-Resistance Variation with Temperature
-50 -25 0 25 50 75 100 125 150
T , JUNCTION TEMPERATURE (°C)
J
0.6
0.8
1.0
1.2
1.4
1.6
R
, D
R
AIN-S
O
U
R
C
E
ON-RESISTANCE (NORMALIZED)
DS(ON)
V = 2.5.V
I = 500mA
GS
D
V = 4.5V
I = 1.0A
GS
D
0
0.2
0.4
0.6
0.8
R
, D
R
AI
N
-S
O
U
R
C
E
O
N
-
R
ESIS
T
A
N
C
E ( )
DS(ON)
Fig. 6 On-Resistance Variation with Temperature
-50 -25 0 25 50 75 100 125 150
T , JUNCTION TEMPERATURE (°C)
J
V = 4.5V
I = 1.0A
GS
D
V = 2.5V
I = 500mA
GS
D
0
0.2
0.4
0.6
0.8
1.0
1.2
Fig. 7 Gate Threshold Variation vs. Ambient Temperature
-50 -25 0 25 50 75 100 125 150
T , AMBIENT TEMPERATURE (°C)
A
V , GATE THRESHOLD VOLTAGE (V)
GS(TH)
I = 250µA
D
I = 1mA
D
0
0.4
0.8
1.2
1.6
0 0.4 0.6 0.8 1.0 1.2
V , SOURCE-DRAIN VOLTAGE (V)
SD
Fig. 8 Diode Forward Voltage vs. Current
0.2
I, S
O
U
R
C
E
C
U
R
R
EN
T
(A)
S
T = 25°C
A
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0
10
20
30
40
50
60
0 5 10 15 20
Fig. 9 Typical Capacitance
V , DRAIN-SOURCE VOLTAGE (V)
DS
C
,
C
A
P
A
C
I
T
A
N
C
E (p
F
)
f = 1MHz
C
iss
C
oss
C
rss
0.1
1
10
100
1,000
2 4 6 8 10 12 14 16 18 20
Fig. 10 Typical Drain-Source Leakage Current
vs. Drain-Source Voltage
V , DRAIN-SOURCE VOLTAGE (V)
DS
I, D
R
AIN-S
O
U
R
C
E LEAKA
G
E
C
U
R
R
EN
T
(nA)
DSS
T = -55°C
A
T = 85°C
A
T = 125°C
A
T = 150°C
A
T = 25°C
A
0
1
2
3
4
5
0 0.1 0.2 0.3 0.4 0.5 0.6
Fig. 11 Gate-Charge Characteristics
Q , TOTAL GATE CHARGE (nC)
g
V , GATE-SOURCE VOLTAGE (V)
GS
V = 10V
I = 250mA
DS
D
0.01 0.1 1 10 100
V , DRAIN-SOURCE VOLTAGE (V)
Fig. 12 SOA, Safe Operation Area
DS
0.001
0.01
0.1
1
10
I, D
R
AIN
C
U
R
R
EN
T
(A)
D
R
Limited
DS(on)
DC
P = 10s
W
P = 1s
W
P = 100ms
W
P = 10ms
W
P = 1ms
W
P = 100µs
W
P = 10s
W
µ
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Electrical Characteristics - Q2 P-CHANNEL (@TA = +25°C, unless otherwise specified.)
Characteristic Symbol Min Typ Max Unit Test Condition
OFF CHARACTERISTICS (Note 6)
Drain-Source Breakdown Voltage BVDSS -20 — — V VGS = 0V, ID = -1mA
Zero Gate Voltage Drain Current TJ = 25°C IDSS — —
-100 nA
VDS = -20V, VGS = 0V
Gate-Source Leakage IGSS — —
±1.0 A VGS = ±5V, VDS = 0V
— —
±5.0 VGS = ±8V, VDS = 0V
ON CHARACTERISTICS (Note 6)
Gate Threshold Voltage VGS
(
th
)
-0.5 — -1.0 V
VDS = VGS, ID = -250A
Static Drain-Source On-Resistance RDS (ON)
— 0.67 0.97
VGS = -5V, ID = -100mA
— 0.7 1.0 VGS = -4.5V, ID = -100mA
— 0.9 1.5 VGS = -2.5V, ID = -80mA
— 1.2 2.0 VGS = -1.8V, ID = -40mA
— 1.5 3.0 VGS = -1.5V, ID = -30mA
— 5 — VGS = -1.2V, ID = -1mA
Forward Transfer Admittance |Yfs| — 0.7 — S VDS = -3V, ID = -100mA
Diode Forward Voltage VSD — -0.75 -1.2 V
VGS = 0V, IS = -330mA,
DYNAMIC CHARACTERISTICS (Note 7)
Input Capacitance Ciss — 46.1 —
pF VDS = 10V, VGS = 0V,
f = 1.0MHz
Output Capacitance Coss — 7.2 —
Reverse Transfer Capacitance Crss — 4.9 —
Gate Resistance R
g
— 14.3 — VDS = 0V, VGS = 0V,
Total Gate Charge VGS = -4.5V Q
g
— 0.5 —
nC VDS = -10V, ID = -250mA
Total Gate Charge VGS = -10V Q
g
— 0.85 —
Gate-Source Charge Q
g
s — 0.09 —
Gate-Drain Charge Q
g
d — 0.09 —
Turn-On Delay Time tD
(
on
)
— 8.5 —
ns
VDD = -3V, VGS = -2.5V,
RL = 300, RG = 25,
ID = -100mA
Turn-On Rise Time t
r
— 4.3 —
Turn-Off Delay Time tD
(
off
)
— 20.2 —
Turn-Off Fall Time tf — 19.2 —
Notes: 5. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout.
6. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate.
7. Short duration pulse test used to minimize self-heating effect.
8. Guaranteed by design. Not subject to product testing.
012 345
-V , DRAIN -SOURCE VOLTAGE (V)
Fig. 13 Typical Output Characteristics
DS
-I , D
R
AI
N
C
U
R
R
E
N
T
(A)
D
0
0.2
0.4
0.6
0.8
1.0
01 2 3 4
-V , GATE SOURCE VOLTAGE(V)
Fig. 14 Typical Transfer Characteristics
GS
-I , D
R
AI
N
C
U
R
R
E
N
T
(A)
D
0
0.2
0.4
0.6
0.8
1.0
T = 125C
A
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0 0.2 0.4 0.6 0.8 1.0 1.2 1.4
-I , DRAIN SOURCE CURRENT
Fig. 15 Typical On-Resistance vs.
Drain Current and Gate Voltage
D
R
,D
R
AIN-S
O
U
R
CE
O
N-
R
ESISTANCE( )
DS(ON)
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
V=2.5V
GS
-
V = -4.5V
GS
V=1.8V
GS
-
0.01 0.1 1 10
-I , DRAIN SOURCE CURRENT (A)
Fig. 16 Typical On-Resistance vs.
Drain Current and Temperature
D
R
, D
R
AIN-S
O
U
R
CE
O
N-
R
ESISTANCE( )
DS(ON)
T = 150°C
A
0.6
0.8
1.0
1.2
1.4
1.6
R
, D
R
AI
N
-S
O
U
R
C
E
ON-RESISTANCE (NORMALIZED)
DS(ON)
-50 -25 0 25 50 75 100 125 150
T , JUNCTION TEMPERATURE ( C)
J
Fig. 17 On-Resistance Variation with Temperature
-50 -25 0 25 50 75 100 125 150
T , JUNCTION TEMPERATURE ( C)
J
Fig. 18 On-Resistance vs.Temperature
R
, D
R
AI
N
-S
O
U
R
C
E
O
N
-
R
ESIS
T
A
N
C
E ( )
DS(ON)
0
0.5
1.0
1.5
2.0
0
0.2
0.4
0.6
0.8
1.0
-50-25 0255075100125150
T , JUNCTION TEMPERATURE ( C)
Fig. 19 Gate Threshold Variation vs. Ambient Temperature
J
-V ,
G
A
T
E
T
H
R
ES
H
O
LD V
O
L
T
A
G
E (V)
GS(th)
I= 250A
D
I= 300A
D
0 0.2 0.4 0.6 0.8 1.0 1.2 1.4
-V , SOURCE-DRAIN VOLTAGE (V)
Fig. 20 Diode Forward Voltage vs. Current
SD
-I , S
O
U
R
C
E
C
U
R
R
EN
T
(A)
S
0
0.2
0.4
0.6
0.8
1.0
T= 25C
A
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0
20
40
60
80
C
, J
U
N
C
T
I
O
N
C
A
P
A
C
I
T
AN
C
E (p
F
)
T
0 5 10 15 20
-V , DRAIN-SOURCE VOLTAGE (V)
DS
Fig. 21 Typical Junction Capacitance
f = 1MHz
C
iss
C
oss
C
rss
0.1
10
100
1,000
-I , LEAKA
G
E
C
U
R
R
E
N
T
(nA)
DSS
1
-V , DRAIN-SOURCE VOLTAGE(V)
Fig. 22 Typical Drain-Source Leakage Current vs. Voltage
DS
04 8121620
T = 1
A
25 C
T = 8
A
5C
T = 2
A
5C
T = 1
A
50 C
0
1
2
3
4
5
6
7
8
0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0
Fig. 23 Gate-Charge Characteristics
Q , TOTAL GATE CHARGE (nC)
g
V , GATE-SOURCE VOLTAGE (V)
GS
V = -10V
I = -250mA
DS
D
0.01 0.1 1 10 100
0.001
0.01
0.1
1
10
-V , DRAIN-SOURCE VOLTAGE (V)
Fig. 24 SOA, Safe Operation Area
DS
-I , D
R
AI
N
C
U
R
R
E
N
T
(A)
D
R
Limited
DS(on)
DC
P = 10s
W
P = 1s
W
P = 100ms
W
P = 10ms
W
P = 1ms
W
P = 100µs
W
P = 10s
W
µ
0.000001 0.0001 0.001 0.01 0.1 1 10 100 1,000
Fig. 25 Transient Thermal Response
t , PULSE DURATION TIME (s)
1
0.00001
0.001
0.01
0.1
1
r(t),
T
R
ANSIEN
T
T
H
E
R
MAL
R
ESIS
T
AN
C
E
T - T = P * R (t)
Duty Cycle, D = t /t
JA JA
12
R (t) = r(t) *
JA
R
R = 275°C/W
JA
JA
P(pk) t
1
t
2
D = 0.7
D = 0.3
D = 0.1
D = 0.05
D = 0.02
D = 0.01
D = 0.005
D = Single Pulse
D = 0.9
D = 0.5
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Package Outline Dimensions
Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for latest version.
Suggested Pad Layout
Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for latest version.
SOT563
Dim Min Max Typ
A 0.15 0.30 0.20
B 1.10 1.25 1.20
C 1.55 1.70 1.60
D - - 0.50
G 0.90 1.10 1.00
H 1.50 1.70 1.60
K 0.55 0.60 0.60
L 0.10 0.30 0.20
M 0.10 0.18 0.11
All Dimensions in mm
Dimensions Value (in mm)
Z 2.2
G 1.2
X 0.375
Y 0.5
C1 1.7
C2 0.5
A
M
L
BC
H
K
G
D
X
Z
Y
C1
C2
C2
G
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IMPORTANT NOTICE
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INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE
(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes
without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the
application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or
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all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated
website, harmless against all damages.
Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel.
Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and
hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or
indirectly, any claim of personal injury or death associated with such unintended or unauthorized application.
Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings
noted herein may also be covered by one or more United States, international or foreign trademarks.
This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the
final and determinative format released by Diodes Incorporated.
LIFE SUPPORT
Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express
written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:
A. Life support devices or systems are devices or systems which:
1. are intended to implant into the body, or
2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the
labeling can be reasonably expected to result in significant injury to the user.
B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the
failure of the life support device or to affect its safety or effectiveness.
Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and
acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any
use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related
information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its
representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.
Copyright © 2013, Diodes Incorporated
www.diodes.com
