SKM150GB12VG
© by SEMIKRON Rev. 4 – 23.03.2011 1
SEMITRANS® 3
GB
SKM150GB12VG
Features
• V-IGBT = 6. Generation Trench V-IGBT
(Fuji)
• CAL4 = Soft switching 4. Generation
CAL-diode
• Isolated copper baseplate using DBC
technology (Direct Copper Bonding)
• UL recognized, file no. E63532
• Increased power cycling capability
• With integrated gate resistor
• Low switching losses at high di/dt
Typical Applications*
•AC inverter drives
•UPS
• Electronic welders
Remarks
• Case temperature limited to
Tc = 125°C max, recomm.
Top = -40 ... +150°C, product
rel. results valid for Tj = 150°
Absolute Maximum Ratings
Symbol Conditions Values Unit
IGBT
VCES Tj=25°C 1200 V
ICTj= 175 °C Tc=25°C 222 A
Tc=80°C 169 A
ICnom 150 A
ICRM ICRM = 3xICnom 450 A
VGES -20 ... 20 V
tpsc
VCC = 720 V
VGE ≤ 20 V
VCES ≤ 1200 V
Tj=125°C 10 µs
Tj-40 ... 175 °C
Inverse diode
IFTj= 175 °C Tc=25°C 187 A
Tc=80°C 140 A
IFnom 150 A
IFRM IFRM = 3xIFnom 450 A
IFSM tp= 10 ms, sin 180°, Tj=25°C 774 A
Tj-40 ... 175 °C
Module
It(RMS) Tterminal =80°C 500 A
Tstg -40 ... 125 °C
Visol AC sinus 50Hz, t = 1 min 4000 V
Characteristics
Symbol Conditions min. typ. max. Unit
IGBT
VCE(sat) IC=150A
VGE =15V
chiplevel
Tj=25°C 1.85 2.30 V
Tj=150°C 2.25 2.55 V
VCE0 Tj=25°C 0.94 1.04 V
Tj=150°C 0.88 0.98 V
rCE VGE =15V Tj=25°C 6.07 8.4 m
Tj=150°C 9.13 10.47 m
VGE(th) VGE=VCE, IC= 6 mA 5.5 6 6.5 V
ICES VGE =0V
VCE = 1200 V
Tj=25°C 0.1 0.3 mA
Tj=150°C mA
Cies VCE =25V
VGE =0V
f=1MHz 9nF
Coes f=1MHz 0.89 nF
Cres f=1MHz 0.884 nF
QGVGE = - 8 V...+ 15 V 1650 nC
RGint 5.0
td(on) VCC = 600 V
IC=150A
VGE =±15V
RG on =4
RG off =4
di/dton = 6100 A/µs
di/dtoff =1700A/µs
du/dtoff = 7800 V/
µs
Tj=150°C 320 ns
trTj=150°C 45 ns
Eon Tj=150°C 10 mJ
td(off) Tj=150°C 550 ns
tfTj=150°C 72 ns
Eoff Tj=150°C 16.5 mJ
Rth(j-c) per IGBT 0.2 K/W
SKM150GB12VG
2 Rev. 4 – 23.03.2011 © by SEMIKRON
Characteristics
Symbol Conditions min. typ. max. Unit
Inverse diode
VF = VEC IF= 150 A
VGE =0V
chip
Tj=25°C 2.17 2.49 V
Tj=150°C 2.11 2.42 V
VF0 Tj=25°C 1.3 1.5 V
Tj=150°C 0.9 1.1 V
rFTj=25°C 5.8 6.6 m
Tj=150°C 8.1 8.8 m
IRRM IF= 150 A
di/dtoff =4000A/µs
VGE =±15V
VCC = 600 V
Tj=150°C 170 A
Qrr Tj=150°C 22 µC
Err Tj=150°C 11 mJ
Rth(j-c) per diode 0.31 K/W
Module
LCE 15 20 nH
RCC'+EE' terminal-chip TC=25°C 0.25 m
TC=125°C 0.5 m
Rth(c-s) per module 0.02 0.038 K/W
Msto heat sink M6 3 5 Nm
Mtto terminals M6 2.5 5 Nm
Nm
w325 g
SEMITRANS® 3
GB
SKM150GB12VG
Features
• V-IGBT = 6. Generation Trench V-IGBT
(Fuji)
• CAL4 = Soft switching 4. Generation
CAL-diode
• Isolated copper baseplate using DBC
technology (Direct Copper Bonding)
• UL recognized, file no. E63532
• Increased power cycling capability
• With integrated gate resistor
• Low switching losses at high di/dt
Typical Applications*
•AC inverter drives
•UPS
• Electronic welders
Remarks
• Case temperature limited to
Tc = 125°C max, recomm.
Top = -40 ... +150°C, product
rel. results valid for Tj = 150°
SKM150GB12VG
© by SEMIKRON Rev. 4 – 23.03.2011 3
Fig. 1: Typ. output characteristic, inclusive RCC'+ EE' Fig. 2: Rated current vs. temperature IC = f (TC)
Fig. 3: Typ. turn-on /-off energy = f (IC)Fig. 4: Typ. turn-on /-off energy = f (RG)
Fig. 5: Typ. transfer characteristic Fig. 6: Typ. gate charge characteristic
SKM150GB12VG
4 Rev. 4 – 23.03.2011 © by SEMIKRON
Fig. 7: Typ. switching times vs. ICFig. 8: Typ. switching times vs. gate resistor RG
Fig. 9: Transient thermal impedance Fig. 10: Typ. CAL diode forward charact., incl. RCC'+EE'
Fig. 11: CAL diode peak reverse recovery current Fig. 12: Typ. CAL diode peak reverse recovery charge
SKM150GB12VG
© by SEMIKRON Rev. 4 – 23.03.2011 5
This is an electrostatic discharge sensitive device (ESDS), international standard IEC 60747-1, Chapter IX
* The specifications of our components may not be considered as an assurance of component characteristics. Components have to be tested
for the respective application. Adjustments may be necessary. The use of SEMIKRON products in life support appliances and systems is
subject to prior specification and written approval by SEMIKRON. We therefore strongly recommend prior consultation of our staff.
SEMITRANS 3
GB
