©2002 Fairchild Semiconductor Corporation
July 2002
FGH20N6S2D / FGP20N6S2D / FGB20N6S2D Rev. A1
FGH20N6S2D / FGP20N6S2D / FGB20N6S2D
FGH20N6S2D / FGP20N6S2D / FGB20N6S2D
600V, SMPS II Series N-Channel IGBT with Anti-Parallel StealthTM Diode
General Description
The FGH20N6S2D FGP20N6S2D, FGB20N6S 2D are Low
Gate Charge, Low Plateau Voltage SMPS II IGBTs
combining the fast switching speed of the SMPS IGBTs
along with lower gate charge, plateau voltage and high
avalanche capability (UIS). These LGC devices shorten
delay times, and reduce the power requirement of the gate
drive. These devices are ideally suited for high voltage
switched mode power supply applications where low
conduction loss, f ast s witchi ng times and UIS capability are
essential. SMPS II LGC devices have been specially
designed for:
• Power Factor Correction (PFC) circ uits
• Full bridge topologies
• Half bridge topologies
• Push-Pull circuits
• Uninterruptible power supplies
• Zero voltage and zero current switching circuits
IGBT (co-pack) formerly Developmental Type TA49332
(Diode formerly Developmental Type TA49469)
Features
• 100kH z Op er ati on at 390V, 7A
• 200kHZ Operation at 390V, 5A
• 600V Switching SOA Capability
• Typical Fall Time. . . . . . . . . . .85ns at TJ = 125oC
• Low Gate Charge . . . . . . . . . 30nC at VGE = 15V
• Low Plateau Voltage . . . . . . . . . . . . .6.5V Typical
• UIS Rated . . . . . . . . . . . . . . . . . . . . . . . . .100mJ
• Low Conduction Loss
• Low E on
• Soft Recovery Diode
Device Maximum Ratings TC= 25°C unless otherwise noted
Symbol Parameter Ratings Units
BVCES Collector to Emitter Breakdown Voltage 600 V
IC25 Collect or Current Continuous , TC = 25°C 28 A
IC110 Collect or Current Continuous, TC = 110°C 13 A
ICM Collector Current Pulsed (Note 1) 40 A
VGES Gate to Emitter Voltage Continuous ±20 V
VGEM G ate to Emitter Voltage Pulsed ±30 V
SSOA Switching Safe Operating Area at TJ = 150°C, Figure 2 35A at 600V A
EAS Pulsed Avalanche Energy, ICE = 7.0A, L = 4mH, VDD = 50V 100 mJ
PDPower Dissipation Total TC = 25°C 125 W
Power Dissipation Derating TC > 25°C 1.0 W/°C
TJOperating Junction Temperature Range -55 to 150 °C
TSTG Storage Junction Temperature Range -55 to 150 °C
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and
operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
1. Pulse width l imi ted by maximum junct ion t em perat ure.
Package
TO-263AB
TO-220AB ECG
E
G
TO-247 ECG
Symbol
COLLECTOR (FLANGE)
C
E
G
©2002 Fairchild Semiconductor Corporation FGH20N6S2D / FGP20N6S2D / FGB20N6S2D Rev. A1
FGH20N6S2D / FGP20N6S2D / FGB20N6S2D
Package Marking and Ordering Information
Electric al Characteristics TJ = 25°C unless otherwise noted
Off State Characteristics
On State Charac t eris ti cs
Dynamic Characteristics
Switching Characteristics
Thermal Characteristics
Device Marking Device Package Tape Width Quantity
20N6S2D FGH20N6S2D TO-247 N/A 30
20N6S2D FGP20N6S2D TO-220AB N/A 50
20N6S2D FGB20N6S2D TO-263AB N/A 50
20N6S2D FGB20N6S2DT TO-263AB 24mm 800 units
Symbol Par a m e ter Test Conditions Min Typ Max Units
BVCES Collector to Emitter Breakdown Vo ltage IC = 250µA, VGE = 0 600 - - V
ICES Collector to Emitter Leakage Current VCE = 600V TJ = 25°C - - 250 µA
TJ = 125°C- - 2.0 mA
IGES Gate to Emitter Leakage Current VGE = ± 20V - - ±250 nA
VCE(SAT) Collector to Emitter Saturation Voltage IC = 7.0A,
VGE = 15V TJ = 25°C-2.22.7V
TJ = 125°C- 1.92.2 V
VEC Diode Forward Voltage IEC = 7.0A - 1.9 2.7 V
QG(ON) Gate Charge IC = 7.0A,
VCE = 300V VGE = 15V - 30 36 nC
VGE = 20V - 38 45 nC
VGE(TH) Gate to Emitter Thr e s h old Voltage IC = 250µA, VCE = 600V 3.5 4.3 5.0 V
VGEP Gate to Emitter Plateau Voltage IC = 7.0A, VCE = 300V - 6.5 8.0 V
SSOA Switching SOA TJ = 150°C, RG = 25Ω, VGE =
15V, L = 0.5mH VCE = 600V 35 - - A
td(ON)I Current Turn-On Delay Time IGBT and Diode at TJ = 25°C,
ICE = 7A,
VCE = 390V,
VGE = 15V,
RG = 25Ω
L = 0.5mH
Test Circuit - Figure 26
-7.7-ns
trI Current Rise Time - 4.5 - ns
td(OFF)I Current Turn-Off Delay Time - 87 - ns
tfI Current Fall Time - 50 - ns
EON1 Turn-On Energy (Note 1) - 25 - µJ
EON2 Turn-On Energy (Note 1) - 85 - µJ
EOFF Tur n-O ff Energy (Note 2) - 58 75 µJ
td(ON)I Current Turn-On Delay Time IGBT and Diode at TJ = 125°C
ICE = 7A,
VCE = 390V,
VGE = 15V,
RG = 25Ω
L = 0.5mH
Test Circuit - Figure 26
-7-ns
trI Current Rise Time - 4.5 - ns
td(OFF)I Current Turn-Off Delay Time - 120 145 ns
tfI Current Fal l Time - 85 105 ns
EON1 Turn-On Energy (Note 1) - 20 - µJ
EON2 Turn-On Energy (Note 1) - 125 140 µJ
EOFF Tur n-O ff Energy (Note 2) - 135 180 µJ
trr Diode Reverse Recovery Time IEC = 7A, dIEC/dt = 200A/µs - 26 31 ns
IEC = 1A, dIEC/dt = 200A/µs - 20 24 ns
RθJC Ther m al Resistance Junction-Case IGBT - - 1.0 °C/W
Diode 2.2 °C/W
NOTE:
1. Values for two Turn - On loss conditions are shown for the convenience of the circuit designer. EON1 is the turn-on loss
of the IGBT only. EON2 is the turn-on loss when a typical diode is used in the test circuit and the diode is at the same TJ
as the IGBT. The diode type is specified in figure 26.
2. Turn-Off E nergy Loss ( EOFF) is defined as the integral of the instantaneous power loss star ting at the trailing edge of
the input pulse and ending at the point where the collector current equals zero (ICE = 0A) . All devices were tested per
JEDEC Standard No . 24-1 Method for Measurement of P ower De vice Turn-Off Switching Loss. This test method produc-
es the true total Turn-Off Energy Loss.
©2002 Fairchild Semiconductor Corporation FGH20N6S2D / FGP20N6S2D / FGB20N6S2D Rev. A1
FGH20N6S2D / FGP20N6S2D / FGB20N6S2D
Typical Performance Curves
Figure 1. DC Collector Current vs Case
Temperature Figure 2. Minimum Switching Safe Operating Area
Figure 3. Operating Frequency vs Collector to
Emitter Current Figure 4. Short Circuit Withstand Time
Figure 5. Collector to Emitter On-State Voltage Figure 6. Collector to Emitter On-State Voltage
TC, CASE TEMPERATURE (oC)
ICE, DC COLLECTOR CURRENT (A)
50
5
0
10
25 75 100 125 150
30
20
15
25
VGE = 15V
VCE, COLLECTOR TO EMITTER VOLTAGE (V)
7000
ICE, COLLECTOR TO EMITTER CURRENT (A)
300 400200100 500 600
0
20
30
15
40 TJ = 150oC, RG = 25Ω, VGE = 15V, L = 500µH
5
10
35
25
fMAX, OPERATING FREQUENCY (kHz)
1
ICE, COLLECTOR TO EMITTER CURRENT (A)
20
400
2010
700
100
TJ = 125oC, RG = 25Ω, L = 500µH, VCE = 390V
fMAX1 = 0.05 / (td(OFF)I + td(ON)I)
RØJC = 0.27oC/W, SEE NOTES
PC = CONDUCTION DISSIPATION
(DUTY FACTOR = 50%)
fMAX2 = (PD - PC) / (EON2 + EOFF)
VGE = 15V
TC = 75oC
VGE = 10V
VGE, GATE TO EMITTER VOLTAGE (V)
ISC, PEAK SHORT CIRCUIT CURRENT (A)
tSC, SHORT CIRCUIT WITHSTAND TIME (µs)
91112
10
6
90
150
13 14
12
8
60
120
180
210
10 15
4
2
tSC
ISC
VCE = 390V, RG = 25Ω, TJ = 125oC
0.50 1.0
VCE, COLLECTOR TO EMITTER VOLTAGE (V)
ICE, COLLECTOR TO EMITTER CURRENT (A)
0
2
4
1.25 2.0 2.25
8
6
14
TJ = 25oC
0.75
TJ = 150oC
12
1.5 1.75
PULSE DURATION = 250µs
DUTY CYCLE < 0.5%, VGE = 15V
TJ = 125oC
10
2.5 2.75
ICE, COLLECTOR TO EMITTER CURRENT (A)
VCE, COLLECTOR TO EMITTER VOLTAGE (V)
0.50 1.0 1.5 2.0 2.50.75
TJ = 150oC
1.751.25
TJ = 25oC
2.25
0
2
4
8
6
14
12
10
TJ = 125oC
PULSE DURATION = 250µs
DUTY CYCLE < 0.5%, VGE = 10V
©2002 Fairchild Semiconductor Corporation FGH20N6S2D / FGP20N6S2D / FGB20N6S2D Rev. A1
FGH20N6S2D / FGP20N6S2D / FGB20N6S2D
Figure 7. Turn-On Energy Loss vs Collector to
Emitter Current Figure 8. Turn-Off Energy Loss vs Collector to
Emitter Current
Figure 9. Turn-On Delay Time vs Collector to
Emitter Current Figure 10. Turn-On Rise Time vs Collector to
Emitter Current
Figure 11. Turn-Off Delay Time vs Collector to
Emitter Current Figure 12. Fall Time vs Collector to Emitter
Current
Typical Performance Curves (Continued)
EON2, TURN-ON ENERGY LOSS ( µJ)
150
ICE , COLLECTOR TO E MITTER CURRENT (A)
100
200
0
400
246810 140
300
250
350
50
TJ = 25oC, TJ = 125oC, VGE = 10V
12
TJ = 25oC, TJ = 125oC, VGE = 15V
RG = 25Ω, L = 500µH, VCE = 390V
EOFF TURN-OFF ENERGY LOSS (µJ)
ICE, COLLECTOR TO EMITTER CURRENT (A)
TJ = 125oC, VGE = 10V, VGE = 15V
TJ = 25oC, VGE = 10V, VGE = 15V
246810 14012
150
100
200
0
350
300
250
50
RG = 25Ω, L = 500µH, VCE = 390V
ICE, COLLECTOR TO EMITTER CURRENT (A)
td(ON)I, TURN-ON DELAY TIME (ns)
6
7
8
9
10
2 4 6 8 10 140
TJ = 25oC, TJ = 125oC, VGE = 15V
TJ = 25oC, TJ = 125oC, V GE = 10V
11
12
13
12
RG = 25Ω, L = 500µH, VCE = 390V
ICE, COLLECTOR TO EMITTER CURRENT (A)
trI, RISE TIME (ns)
TJ = 25oC, TJ = 125oC, VGE = 10V
TJ = 25oC, TJ = 125oC, VGE =15V
2 4 6 8 10 14012
0
5
10
15
20
25
30
35 RG = 25Ω, L = 500µH, VCE = 390V
80
60
ICE, COLLECTOR TO EMITTER CURRENT (A)
td(OFF)I, TURN-OFF DELAY TIME (ns)
140
120
100
VGE = 10V, VGE = 15V, TJ = 25oC
VGE = 10V, VGE = 15V, TJ = 125oC
2 4 6 8 10 14012
RG = 25Ω, L = 500µH, VCE = 390V
ICE, COLLECTOR TO EMITTER CURRENT (A)
tfI, FALL TIME (ns)
TJ = 25oC, VGE = 10V or 15V
TJ = 125oC, VGE = 10V or 15V
2 4 6 8 10 14012
60
40
120
100
80
RG = 25Ω, L = 500µH, VCE = 390V
©2002 Fairchild Semiconductor Corporation FGH20N6S2D / FGP20N6S2D / FGB20N6S2D Rev. A1
FGH20N6S2D / FGP20N6S2D / FGB20N6S2D
Figure 13. Transfer Characteristic Figure 14. Gate Charge
Figure 15. Total Switching Loss vs Case
Temperature Figure 16. Total Switching Loss vs Gate
Resistance
Figure 17. Capacitance vs Collector to Emitter
Voltage Figure 18. Collector to Emitter On-State Voltage vs
Gate to Emitter Voltage
Typical Performance Curves (Continued)
ICE, COLLECTOR TO EMITTER CURRENT (A)
0
20
40
VGE, GATE TO EMITTER VOLTAGE (V)
60
120
TJ = 125oC
TJ = -55oC
100
80
TJ = 25oC
PULSE DURATION = 250µs
DUTY CYCLE < 0.5%, VCE = 10V
6 8 10 12 14 164
VGE, GATE TO EMITTER VOLTAGE (V)
QG, GATE CHARGE (nC)
IG(REF) = 1mA, RL = 42.6Ω, TJ = 25oC
VCE = 200V
VCE = 600V
VCE = 400V
5 10152025 35030
6
4
8
0
16
12
10
14
2
TC, CASE TEMPERATURE (oC)
ETOTAL, TOTAL SWITCHING ENERGY LOSS (mJ)
RG = 25Ω, L = 500µH, VCE = 390V, VGE = 15V
ICE = 14A
ETOTAL = EON2 + EOFF
ICE = 7A
ICE = 3A
0.2
0
0.8
0.6
0.4
5025 75 100 125 150
RG, GATE RESISTANCE (Ω)
ETOTAL, TOTAL SWITCHING ENERGY LOSS (mJ)
ETOTAL = EON2 + EOFF
TJ = 125oC, L = 500µH, VCE = 390V, VGE = 15V
0.1
0.05
10
1ICE = 14A
1 10 100 1000
ICE = 7A
ICE = 3A
VCE, COLLECTOR TO EMITTER VOLTAGE (V)
C, CAPACITANCE (nF)
CRES
0 1020304050
0.0
0.4
1.2
0.8
FREQUENCY = 1MHz
COES
CIES
60 70 80 90 100
0.2
0.6
1.0
VGE, GATE TO EMITTER VOLTAGE (V)
6
2.0 9
2.2
2.6
2.4
8101112 16
2.8
VCE, COLLECTOR TO EMITTER VOLTAGE (V)
PULSE DURATION = 250µs, TJ = 25oC
3.6
7131415
DUTY CYCLE < 0.5%
ICE = 14A
5
ICE = 3A
ICE = 7A
3.0
3.2
3.4
©2002 Fairchild Semiconductor Corporation FGH20N6S2D / FGP20N6S2D / FGB20N6S2D Rev. A1
FGH20N6S2D / FGP20N6S2D / FGB20N6S2D
Figure 19. Diode Forward Current vs Forward
Voltage Drop Figure 20. Recovery Times vs Forward Current
Figure 21. Recovery Times vs Rate of Change of
Current Figure 22. Stored Charge vs Rate of Change of
Current
Figure 23. Reverse Recovery Softness Factor vs
Rate of Change of Current Figure 24. Maxi mum Reve rse Reco very Current vs
Rate of Change of Current
Typical Performance Curves (Continued)
0.5 1.0 1.5 2.5
IEC, FORWARD CURRENT (A)
VEC, FORWARD VOLTAGE (V)
02.0
0
2
25oC
125oC
14
8
PULSE DURATION = 250µs
DUTY CYCLE < 0.5%,
3.0
4
6
12
10
200
100
0
trr, REVERSE RECOVERY TIMES (ns)
IEC, FORWARD CURRENT (A)
01442
125oC ta
125oC tb, trr
128106
dIEC/dt = 200A/µs, VCE = 390V
50
150
250
25oC tb, trr
25o ta
25oC tb
IEC = 7A, VCE = 390V
ta, tb, REVERSE RECOVERY TIMES (ns)
dIEC/dt, RATE OF CHANGE OF CURRENT (A/
µ
s)
40
0
60
80
100
160
20
1000200 300 600400 500
125oC tb
125oC ta
25oC ta
140
120
700 800 900
250
200
150
100
Qrr, REVERSE RECOVERY CHARGE (nC)
dIEC/dt, RATE OF CHANGE OF CURRENT (A/
µ
s)
300
500
125oC, IEC = 7A
125oC, IEC = 3.5A
25oC, IEC = 3.5A
25oC, IEC = 7A
VCE = 390V
350
1000200 300 600400 500 700 800 900
450
400
dIEC/dt, CURRENT RATE OF CHANGE (A/
µ
s)
3.0
5.0
4.5
6.0
5.5
IEC = 3.5A
S, REVERSE RECOVERY SOFTNES S FACTOR
4.0
3.5
1000200 300 600400 500 700 800 900
IEC = 7A
VCE = 390V, TJ = 125°C
dIEC/dt, CURRENT RATE OF CHANGE (A/
µ
s)
3
5
4
10
6
IEC = 7A
IEC = 3.5A
IRRM, MAX REVERSE RECOVERY CURRENT (A)
7
VCE = 390V, TJ = 125°C
9
8
1000200 300 600400 500 700 800 900
©2002 Fairchild Semiconductor Corporation FGH20N6S2D / FGP20N6S2D / FGB20N6S2D Rev. A1
FGH20N6S2D / FGP20N6S2D / FGB20N6S2D
Figure 25. IGBT Normalized Transient Therm al Impe danc e, Junc tion to Case
Typical Performance Curves (Continued)
t
1
, RECTANGULAR PULSE DURATION (s)
Z
θ
JC
, NORMALIZED THE RM AL RESP ON S E
10
-2
10
-1
10
0
10
-5
10
-3
10
-2
10
-1
10
0
10
1
10
-4
0.10
t
1
t
2
P
D
DUTY FACTOR, D = t
1
/ t
2
PEAK T
J
= (P
D
X Z
θ
JC
X R
θ
JC
) + T
C
SINGLE PULSE
0.50
0.20
0.05
0.02
0.01
Test Circuit and Waveforms
Figure 26. Inductive Switching Test Circuit Figure 27. Switching T est Wav eform s
R
G
= 25
Ω
L = 500
µ
H
V
DD
= 390V
+
-
FGH20N6S2D
DIOD E TA49469
FGH20N6S2D
t
fI
t
d(OFF)I
t
rI
t
d(ON)I
10%
90%
10%
90%
V
CE
I
CE
V
GE
E
OFF
E
ON2
©2002 Fairchild Semiconductor Corporation FGH20N6S2D / FGP20N6S2D / FGB20N6S2D Rev. A1
FGH20N6S2D / FGP20N6S2D / FGB20N6S2D
Handling Precautions for IGBTs
Insulate d G at e Bi polar Transistor s ar e suscepti ble to
gate-insulation damage by the electrostatic discharge
of energy through th e devices. Whe n handling these
devices, care sho ul d be exer ci sed to ass ur e t hat th e
static ch ar ge built in t he handler’s body capac i ta nce
is not disc har ged through the device. With prop er
handling and application procedures, howev er,
IGBTs are cu r rently be i ng e xtensively used in
production by numerous equipment manufacturers in
military, industrial and consumer applications, with
virtua l ly no damage pro blems due to elect r ost atic
discharge. IG BTs can be handled safely if the
following basic prec aut i ons are taken:
1. Prior to assembly into a circuit, all leads should be
kept shorted together either by the use of metal
shorting springs or by the insertion into conduc-
tive material such as “ECCOSORBD™ LD26” or
equivalent.
2. Wh en de v ices are r emo v ed b y ha nd fr om th eir
carriers, the hand being used should be grounded
by any suitable means - for exampl e, with a
metallic wristband.
3. Tips of soldering irons should be grounded.
4. De vice s should ne ver b e inserted into or remov ed
from circu its w it h power on.
5. Gate Voltage Rating - Ne ver exceed the gate-
voltage rating of VGEM. Exceeding the rated VGE
can result in permanent damage to the oxide layer
in the gate region.
6. Gate Termination - The gates of these devices
are essentially c apacitors. Cir cuit s t hat l eave the
gate open-circuited or floating should be av oided.
These conditions can result in turn-on of the
device due to voltage buildup on the i nput
capacitor due to le akage cur re nt s or pickup.
7. Gate Protection - These devices do not have an
inter nal monolithic Zener di ode from ga te to
emitter. If gate protection is req ui re d an external
Zener is re co mmended.
Operating Frequency Informat ion
Operating fr equ ency information for a typical device
(Figure 3) is presented as a guide for estimating
device performanc e for a specifi c ap pl i cati on. Othe r
typica l fre quenc y vs collect or current (I CE) plot s are
possible using the information shown for a typical unit
in Figures 5, 6, 7, 8, 9 and 11. The operating
frequency plot (Figure 3) of a typical device shows
fMAX1 or fMAX2; whichever is smaller at each point.
The informat i on i s ba sed on mea surement s of a
typical d evice and is bou nded by the maximum rate d
junction temperature.
fMAX1 is defined by fMAX1 = 0.05/(td(OFF)I+ td(ON)I).
Deadtime (the denominator) has been arbitrarily held
to 10 % of the o n-state ti me for a 50% d u ty factor.
Other def ini t io ns ar e possible. td(OFF)I and td(ON)I are
defined in Figure 27. Device turn- of f de lay can
establish an additional frequency limiting condition for
an application other than TJM. td(OFF)I is important
when controlling output ripple under a lightly loaded
condition.
fMAX2 is defi ned by f MAX2 = (PD - PC)/(EOFF + EON2).
The allo wab le di ssipation (PD) is d efin e d b y
PD=(T
JM -T
C)/RθJC. The sum of device switching
and conduction losses must not exceed PD. A 5 0%
duty fa ctor was used (Figure 3) and the conduction
losses (PC) are approximated by PC=(V
CE xI
CE)/2.
EON2 and EOFF are defined in the switchin g
wa v ef orms sho wn in Fi gure 27. EON2 is the integral of
the instantaneous power loss (ICE x VCE) during turn-
on and EOFF i s t he i ntegral of the in st ant aneous
power loss (ICE xV
CE) during turn-off. All tail losses
are includ ed in the calcul ation for EOFF; i.e., th e
collecto r c urrent equa ls zero (ICE = 0)
ECCOSORBD is a Trademark of Emerson and Cumming, Inc.
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER
NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD
DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT
OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT
RIGHTS, NOR THE RIGHTS OF OTHERS.
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not intended to be an exhaustive list of all such trademarks.
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FAIRCHILDS PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:
1. Life support devices or systems are devices or
systems which, (a) are intended for surgical implant into
the body, or (b) support or sustain life, or (c) whose
failure to perform when properly used in accordance
with instructions for use provided in the labeling, can be
reasonably expected to result in significant injury to the
user.
2. A critical component is any component of a life
support device or system whose failure to perform can
be reasonably expected to cause the failure of the life
support device or system, or to affect its safety or
effectiveness.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification Product Status Definition
Advance Information
Preliminary
No Identification Needed
Obsolete
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
Formative or
In Design
First Production
Full Production
Not In Production
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I2C
Rev. I
ACEx
ActiveArray
Bottomless
CoolFET
CROSSVOLT
DOME
EcoSPARK
E2CMOSTM
EnSignaTM
Across the board. Around the world.
The Power Franchise
PACMAN
POP
Power247
PowerTrenchâ
QFET
QS
QT Optoelectronics
Quiet Series
RapidConfigure
RapidConnect
SILENT SWITCHERâ
SMART START
SPM
Stealth
SuperSOT-3
SuperSOT-6
SuperSOT-8
SyncFET
TinyLogic
TruTranslation
UHC
UltraFETâ
VCX