APT4012BVFR APT4012SVFR 400V POWER MOS V 0.120 37A BVFR (R) FREDFET D3PAK TO-247 Power MOS V(R) is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V(R) also achieves faster switching speeds through optimized gate layout. * Faster Switching * Avalanche Energy Rated * Lower Leakage * TO-247 or Surface Mount D3Pak SVFR D G * Fast Recovery Body Diode S MAXIMUM RATINGS Symbol VDSS ID All Ratings: TC = 25C unless otherwise specified. Parameter APT4012BVFR_SVFR UNIT 400 Volts Drain-Source Voltage 37 Continuous Drain Current @ TC = 25C 1 Amps IDM Pulsed Drain Current VGS Gate-Source Voltage Continuous 30 Gate-Source Voltage Transient 40 Total Power Dissipation @ TC = 25C 370 Watts Linear Derating Factor 2.96 W/C VGSM PD TJ,TSTG 148 -55 to 150 Operating and Storage Junction Temperature Range TL Lead Temperature: 0.063" from Case for 10 Sec. IAR Avalanche Current 1 37 1 Repetitive Avalanche Energy EAS Single Pulse Avalanche Energy C 300 (Repetitive and Non-Repetitive) EAR Volts Amps 30 4 mJ 1300 STATIC ELECTRICAL CHARACTERISTICS ID(on) RDS(on) IDSS IGSS VGS(th) MIN Drain-Source Breakdown Voltage (VGS = 0V, ID = 250A) 400 Volts 37 Amps On State Drain Current 2 (VDS > ID(on) x R DS(on) Max, VGS = 10V) Drain-Source On-State Resistance 2 (VGS = 10V, 0.5 ID[Cont.]) TYP MAX 0.12 Zero Gate Voltage Drain Current (VDS = VDSS, VGS = 0V) 250 UNIT Ohms A Zero Gate Voltage Drain Current (VDS = 0.8 VDSS, VGS = 0V, TC = 125C) 1000 Gate-Source Leakage Current (VGS = 30V, VDS = 0V) 100 nA 4 Volts Gate Threshold Voltage (VDS = VGS, ID = 1.0mA) 2 CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. APT Website - http://www.advancedpower.com 1-2006 BVDSS Characteristic / Test Conditions 050-7271 Rev B Symbol DYNAMIC CHARACTERISTICS APT4012BVFR_SVFR Characteristic Symbol Test Conditions MIN TYP Ciss Input Capacitance VGS = 0V 4500 Coss Output Capacitance VDS = 25V 690 Crss Reverse Transfer Capacitance f = 1 MHz 290 VGS = 10V 195 VDD = 200V ID = 37A @ 25C 25 90 Turn-on Delay Time VGS = 15V 14 Rise Time VDD = 200V 17 ID = 37A @ 25C 55 RG = 1.6 12 Qg Total Gate Charge Qgs 3 Gate-Source Charge Qgd Gate-Drain ("Miller") Charge t d(on) tr t d(off) Turn-off Delay Time tf Fall Time MAX UNIT pF nC ns SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS Symbol Characteristic / Test Conditions MIN TYP Continuous Source Current (Body Diode) IS 1 Pulsed Source Current VSD Diode Forward Voltage dv/ Peak Diode Recovery dv/dt dt 37 (Body Diode) ISM 2 MAX 148 (VGS = 0V, IS = -37A) 5 UNIT Amps 1.3 Volts 15 V/ns t rr Reverse Recovery Time (IS = -37A, di/dt = 100A/s) Tj = 25C 250 Tj = 125C 525 Q rr Reverse Recovery Charge (IS = -37A, di/dt = 100A/s) Tj = 25C 1.6 Tj = 125C 6.0 IRRM Peak Recovery Current (IS = -37A, di/dt = 100A/s) Tj = 25C 13 Tj = 125C 21 ns C Amps THERMAL CHARACTERISTICS Symbol Characteristic MIN RJC Junction to Case RJA Junction to Ambient TYP MAX UNIT 0.34 40 1 Repetitive Rating: Pulse width limited by maximum junction C/W 3 See MIL-STD-750 Method 3471 4 Starting T = +25C, L = 1.90mH, R = 25, Peak I = 37A j G L 5 dv/ numbers reflect the limitations of the test circuit rather than the dt device itself. IS -ID Cont. di/dt 700A/s VR VDSS TJ 150C [ ] APT Reserves the right to change, without notice, the specifications and information contained herein. temperature. 2 Pulse Test: Pulse width < 380 s, Duty Cycle < 2% D=0.5 0.1 0.2 0.05 0.1 0.05 0.01 Note: 0.02 PDM Z JC, THERMAL IMPEDANCE (C/W) 050-7271 Rev B 1-2006 0.4 0.01 0.005 t2 SINGLE PULSE 0.001 10-5 t1 10-4 Duty Factor D = t1/t2 Peak TJ = PDM x ZJC + TC 10-3 10-2 10-1 1.0 10 RECTANGULAR PULSE DURATION (SECONDS) FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION APT4012BVFR_SVFR Typical Performance Curves 100 100 VGS=15V 80 6.5V 60 6V 5.5V 40 5V 20 4.5V ID, DRAIN CURRENT (AMPERES) TJ = +125C VDS> ID (ON) x RDS (ON)MAX. 250SEC. PULSE TEST @ <0.5 % DUTY CYCLE 60 40 20 TJ = +125C TJ = -55C TJ = +25C 0 0 2 4 6 8 VGS, GATE-TO-SOURCE VOLTAGE (VOLTS) FIGURE 4, TYPICAL TRANSFER CHARACTERISTICS BVDSS, DRAIN-TO-SOURCE BREAKDOWN VOLTAGE (NORMALIZED) ID, DRAIN CURRENT (AMPERES) 40 30 20 10 0 50 75 100 125 150 TC, CASE TEMPERATURE (C) FIGURE 6, MAXIMUM DRAIN CURRENT vs CASE TEMPERATURE 25 6V 5.5V 40 5V 20 4.5V 1.5 V GS NORMALIZED TO = 10V @ 0.5 I [Cont.] D 1.4 1.3 1.2 VGS=10V VGS=20V 1.1 1.0 0.9 0 20 40 60 80 100 ID, DRAIN CURRENT (AMPERES) FIGURE 5, RDS(ON) vs DRAIN CURRENT 1.15 1.10 1.05 1.00 0.95 0.90 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (C) FIGURE 7, BREAKDOWN VOLTAGE vs TEMPERATURE -50 1.2 2.5 I = 0.5 I [Cont.] D D V GS = 10V 2.0 1.5 1.0 0.5 0.0 -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (C) FIGURE 8, ON-RESISTANCE vs. TEMPERATURE VGS(TH), THRESHOLD VOLTAGE (NORMALIZED) RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE (NORMALIZED) 60 1.1 1.0 0.9 0.8 1-2006 ID, DRAIN CURRENT (AMPERES) TJ = +25C 80 6.5V 0 4 8 12 16 20 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 3, TYPICAL OUTPUT CHARACTERISTICS RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE 0 40 80 120 160 200 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 2, TYPICAL OUTPUT CHARACTERISTICS TJ = -55C 80 0 0 100 7V VGS=10V 0.7 0.6 -50 -25 0 25 50 75 100 125 150 TC, CASE TEMPERATURE (C) FIGURE 9, THRESHOLD VOLTAGE vs TEMPERATURE 050-7271 Rev B ID, DRAIN CURRENT (AMPERES) 7V VGS=10V & 15V APT4012BVFR_SVFR 200 10S 10,000 OPERATION HERE LIMITED BY RDS (ON) 100S 50 C, CAPACITANCE (pF) 100 ID, DRAIN CURRENT (AMPERES) 15,000 1mS 10 5 10mS 100mS DC 1 TC =+25C TJ =+150C SINGLE PULSE .5 .1 IDR, REVERSE DRAIN CURRENT (AMPERES) VGS, GATE-TO-SOURCE VOLTAGE (VOLTS) D VDS=80V 16 VDS=200V 12 VDS=320V 8 4 0 0 50 100 150 200 250 300 350 Qg, TOTAL GATE CHARGE (nC) FIGURE 12, GATE CHARGES vs GATE-TO-SOURCE VOLTAGE Drain 6.15 (.242) BSC 5.38 (.212) 6.20 (.244) 50 TJ =+150C TJ =+25C 10 5 1 3 D PAK (SVFR) Package Outline Drain (Heat Sink) 15.49 (.610) 16.26 (.640) 100 0.2 0.4 0.6 0.8 1.0 1.2 1.4 VSD, SOURCE-TO-DRAIN VOLTAGE (VOLTS) FIGURE 13, TYPICAL SOURCE-DRAIN DIODE FORWARD VOLTAGE TO-247 (BVFR) Package Outline 4.69 (.185) 5.31 (.209) 1.49 (.059) 2.49 (.098) Crss 500 .01 .1 1 10 50 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 11, TYPICAL CAPACITANCE vs DRAIN-TO-SOURCE VOLTAGE I = I [Cont.] D Coss 1,000 100 1 5 10 50 100 400 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 10, MAXIMUM SAFE OPERATING AREA 20 Ciss 5,000 4.98 (.196) 5.08 (.200) 1.47 (.058) 1.57 (.062) 15.95 (.628) 16.05 (.632) Revised 4/18/95 20.80 (.819) 21.46 (.845) 1.04 (.041) 1.15 (.045) 13.79 (.543) 13.99 (.551) 13.41 (.528) 13.51 (.532) Revised 8/29/97 11.51 (.453) 11.61 (.457) 3.50 (.138) 3.81 (.150) 0.46 (.018) 0.56 (.022) {3 Plcs} 050-7271 Rev B 1-2006 4.50 (.177) Max. 0.40 (.016) 0.79 (.031) 1.65 (.065) 2.13 (.084) 19.81 (.780) 20.32 (.800) 1.01 (.040) 1.40 (.055) 2.21 (.087) 2.59 (.102) 2.87 (.113) 3.12 (.123) 5.45 (.215) BSC 2-Plcs. Dimensions in Millimeters and (Inches) Gate Drain Source 0.020 (.001) 0.178 (.007) 2.67 (.105) 2.84 (.112) 1.27 (.050) 1.40 (.055) 1.22 (.048) 1.32 (.052) 1.98 (.078) 2.08 (.082) 5.45 (.215) BSC {2 Plcs.} 3.81 (.150) 4.06 (.160) (Base of Lead) Heat Sink (Drain) and Leads are Plated Source Drain Gate Dimensions in Millimeters (Inches) APT's products are covered by one or more of U.S.patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. US and Foreign patents pending. All Rights Reserved.