1
MRF1507 MRF1507T1MOTOROLA RF DEVICE DATA
The RF MOSFET Line
N–Channel Enhancement–Mode Lateral MOSFETs
The MRF1507 is designed for broadband commercial and industrial
applications at frequencies to 520 MHz. The high gain and broadband
performance of this device makes it ideal for large–signal, common source
amplifier applications in 7.5 volt portable FM equipment.
•Specified Performance @ 520 MHz, 7.5 Volts
Output Power — 8 Watts
Power Gain — 10 dB
Efficiency — 65%
•Characterized with Series Equivalent Large–Signal
Impedance Parameters
•Excellent Thermal Stability
•Capable of Handling 20:1 VSWR, @ 9.5 Vdc,
520 MHz, 2 dB Overdrive
•Broadband UHF/VHF Demonstration Amplifier
Information Available Upon Request
•RF Power Plastic Surface Mount Package
•Available in Tape and Reel by Adding T1 Suffix to
Part Number. T1 Suffix = 1,000 Units per 12 mm, 7 Inch Reel.
MAXIMUM RATINGS
Rating Symbol Value Unit
Drain–Source Voltage (1) VDSS 25 Vdc
Gate–Source Voltage VGS ±20 Vdc
Drain Current — Continuous ID4 Adc
Total Device Dissipation @ TC = 25°C
Derate above 25°CPD62.5
0.50 Watts
W/°C
Storage Temperature Range Tstg –65 to +150 °C
Operating Junction Temperature Tj150 °C
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Thermal Resistance, Junction to Case RθJC 2°C/W
(1) Not designed for 12.5 volt applications.
NOTE – CAUTION – MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.
Order this document
by MRF1507/D
SEMICONDUCTOR TECHNICAL DATA
8 W, 520 MHz, 7.5 V
LATERAL N–CHANNEL
BROADBAND
RF POWER MOSFET
CASE 466–02, STYLE 1
(PLD 1.5)
Motorola, Inc. 1998
G
D
S
REV 1
MRF1507 MRF1507T1
2MOTOROLA RF DEVICE DATA
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
Characteristic Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Zero Gate Voltage Drain Current
(VDS = 25 Vdc, VGS = 0) IDSS — — 1 µAdc
Gate–Source Leakage Current
(VGS = 20 Vdc, VDS = 0) IGSS — — 1 µAdc
ON CHARACTERISTICS
Gate Threshold Voltage
(VDS = 10 Vdc, ID = 100 µAdc) VGS(th) 2.5 3.4 — Vdc
Drain–Source On–V oltage
(VGS = 10 Vdc, ID = 2 Adc) VDS(on) 0.3 0.44 — Vdc
Forward T ransconductance
(VDS = 10 Vdc, ID = 2 Adc) gfs 1.30 1.80 — S
DYNAMIC CHARACTERISTICS
Input Capacitance
(VDS = 7.5 Vdc, VGS = 0, f = 1 MHz) Ciss —48 — pF
Output Capacitance
(VDS = 7.5 Vdc, VGS = 0, f = 1 MHz) Coss —40.5 — pF
Reverse T ransfer Capacitance
(VDS = 7.5 Vdc, VGS = 0, f = 1 MHz) Crss —5.2 — pF
FUNCTIONAL TESTS (In Motorola Test Fixture)
Common–Source Amplifier Power Gain
(VDD = 7.5 Vdc, Pin = 29 dBm, IDQ = 150 mA, f = 520 MHz) Gps 10 11 — dB
Drain Efficiency
(VDD = 7.5 Vdc, Pin = 29 dBm, IDQ = 150 mA, f = 520 MHz) η50 65 — %
Pout
(VDD = 7.5 Vdc, Pin = 29 dBm, IDQ = 150 mA, f = 520 MHz) Pout 89.9 — W
3
MRF1507 MRF1507T1MOTOROLA RF DEVICE DATA
Figure 1. 500 – 520 MHz Broadband Test Circuit
B1 Fair Rite Products Long Ferrite Bead
C1, C5 0.1 µF, 100 mil Chip Capacitor
C2, C4 10 µF, 50 V Electrolytic Capacitor
C3, C6, C8, C14 130 pF, 100 mil Chip Capacitor
C7, C9, C13 0.3–20 pF Trimmer Capacitor
C10 82 pF, 100 mil Chip Capacitor
C11 39 pF, 100 mil Chip Capacitor
C12 32 pF, 100 mil Chip Capacitor
L1 4 T urns, #20 AWG Enamel, 0.1″ID
N1, N2 Type N Connectors
R1 1.1 MΩ, 1/4 W Carbon
R2 2 kΩ, 1/2 W Carbon
R3 100 Ω, 1/4 W Carbon
VGG VDD
C1 R1
R2
C2 C3 C5C4
+
R3
RF
INPUT
RF
OUTPUT
Z1 Z2 Z3 Z4
Z7
C8
C7
C14
C9
DUT
C12
Z8
C13
Z10 Z11
R4
C10
Z5 Z6
C11
L1
Z9 N2
+C6
B1
N1
R4 20 Ω, 1/4 W Carbon
Z1 0.459″ x 0.083″ Microstrip
Z2 0.135″ x 0.083″ Microstrip
Z3 1.104″ x 0.083″ Microstrip
Z4 0.114″ x 0.083″ Microstrip
Z5 0.154″ x 0.083″ Microstrip
Z6 0.259″ x 0.213″ Microstrip
Z7 0.217″ x 0.213″ Microstrip
Z8 0.175″ x 0.083″ Microstrip
Z9 0.747″ x 0.083″ Microstrip
Z10 0.608″ x 0.083″ Microstrip
Z11 0.594″ x 0.083″ Microstrip
Board Glass Teflon, 31 mils
TYPICAL CHARACTERISTICS
Figure 2. Output Power versus Input Power
9
Pin, INPUT POWER (WATTS)
10.90
5
Figure 3. Output Power versus
Supply Voltage @ 400 MHz
47VDD, SUPPLY VOLTAGE (V)
12
8
5
0.50 1.31
10
P
out, OUTPUT POWER (WATTS)
6100.10
P
out, OUTPUT POWER (WATTS)
7
8
VDD = 7.5 V
IDQ = 200 mA
11
6
9
Pin = 300 mW
3
0.710.30 1.10 1.51
11
9
8
4
6
10
2
400 MHz
470 MHz
440 MHz
7
500 mW
700 mW
IDQ = 200 mA
MRF1507 MRF1507T1
4MOTOROLA RF DEVICE DATA
TYPICAL CHARACTERISTICS
P
out
GAIN (dB), (W ATTS) P
out
GAIN (dB),
Figure 4. Output Power versus
Supply Voltage @ 470 MHz
12
VDD, SUPPLY VOLTAGE (V)
5
48
8
10
Figure 5. Output Power versus
Supply Voltage @ 440 MHz
VDD, SUPPLY VOLTAGE (V)
79
P
out, OUTPUT POWER (WATTS)
6
P
out, OUTPUT POWER (WATTS)
11
Figure 6. Output Power versus Gate Current
9
IDQ, GA TE CURRENT (mA)
6
Figure 7. Gain, Pout, Efficiency
versus Drain Voltage
16
VDD, DRAIN VOLTAGE (V)
4
450
Figure 8. Pout versus IDQ
0IDQ (A)
80.7
Figure 9. Pout, Gain, Drain Efficiency versus Pin
INPUT POWER (dBm)
023
0.3 15
0
5
10
12
0674
10
12
30
40
DRAIN EFFICIENCY (%)
13
8910
15
20
50
60
70
80
6.5
7
7.5
8
f = 520 MHz
IDQ = 150 mA
Pin = 0.7 W
f = 440 MHz
200
6
9
8.5
5
8
10
Pin = 300 mW
500 mW
700 mW
7
12
5
48
8
10
796
11
13
6
9
10
7Pin = 300 mW
500 mW
700 mW
P
out, OUTPUT POWER (W ATTS)
50 100 150 250 500300 350 400
VCC = 7.5 V
Pin = 0.6 W
f = 400 MHz
f = 470 MHz
(WATTS)
DRAIN EFFICIENCY
GAIN
Pout
P
out, OUTPUT POWER (W ATTS)
0.1 0.80.4 0.50.2 0.6 0.9 1.0
Pout
GAIN
f = 520 MHz
VDD = 7.5 V
Pin = 0.7 W 20
30
DRAIN EFFICIENCY (%)
40
50
60
70
17 19 21 2725 29
f = 520 MHz
VDD = 7.5 V
IDQ = 150 mA
Pout
Pout
GAIN
DRAIN EFFICIENCY
IDQ = 200 mA IDQ = 200 mA
Gp(dB),
5
MRF1507 MRF1507T1MOTOROLA RF DEVICE DATA
TYPICAL CHARACTERISTICS
Figure 10. Pout versus Drain Voltage
12
VDS, DRAIN VOLTAGE (V)
08
4
8
Figure 11. Pout versus IDQ
IDQ, (mA)
6
P
out, OUTPUT POWER (WATTS)
4
P
out, OUTPUT POWER (WATTS)
10
Figure 12. Pout versus Drain Voltage
12
VDS, DRAIN VOLTAGE (V)
0
Figure 13. Pout versus IDQ
10
IDQ, (mA)
4
Figure 14. Pout versus Pin
20 Pin, (dBm)
5
Figure 15. Pout versus Pin
Pin, (dBm)
52320
4
9
13
8
0400 6000
9
12
800 900 1000
17
12
2
4
6
8
8
6
10
200
6
10
Pin = 250 mW
500 mW
700 mW
2
12
4
0400
8
10
200 7000
6
1000
Pin = 250 mW
500 mW
700 mW
P
out, OUTPUT POWER (W ATTS)
567 910
242221 23 25
VDD = 7.5 V
21 22 24 25
795
f = 500 MHz
VDD = 7.5 V
f = 500 MHz
VDD = 7.5 V
2
500300 800100 600 900
Pin = 250 mW
500 mW
700 mW
f = 520 MHz
VDD = 7.5 V
P
out, OUTPUT POWER (W ATTS)
2
500 700100 300
f = 520 MHz
VDD = 7.5 V
Pin = 250 mW
500 mW
700 mW
f = 135 MHz
IDQ = 800 mA
P
out, OUTPUT POWER (WATTS)
11
10
8
7
6
P
out, OUTPUT POWER (WATTS)
VDD = 7.5 V
VDD = 9 V VDD = 9 V
f = 155 MHz
IDQ = 800 mA
7
11
15
MRF1507 MRF1507T1
6MOTOROLA RF DEVICE DATA
TYPICAL CHARACTERISTICS
ID, DRAIN CURRENT (AMPS)
VGS, GATE–SOURCE VOLTAGE (V)
1
02
4
VDS, DRAIN–SOURCE VOLTAGE (V)
14
I
D
, DRAIN CURRENT (AMPS)
0
C, CAPACITANCE (pF)
5
VDS, DRAIN–SOURCE VOLTAGE (V)
00
1
2
3TC = 25
°
C
2
4
6
VDS = 10 V
3
60
010
20
5150
40
80
20
Ciss
10 100
35
TYPICAL DEVICE SHOWN
Coss
Crss
VGS = 0 V
f = 1 MHz
Pin, (dBm)
52320
9
13
17
21 22 24 25
P
out, OUTPUT POWER (WATTS)
VDD = 7.5 V
VDD = 9 V
f = 175 MHz
IDQ = 800 mA
7
11
15
Figure 16. Pout versus Pin Figure 17. Drain Current versus Gate Voltage
(Typical Device Shown)
Figure 18. Capacitance versus Voltage Figure 19. Maximum Rated Forward Biased
Safe Operating Area
7
MRF1507 MRF1507T1MOTOROLA RF DEVICE DATA
ZOL*
f
MHz Zin
ΩZOL*
Ω
400
440
470
500
3.6 – j3.1
3.1 – j4.4
4.0 – j3.7
2.0 – j2.71
2.5 – j0.5
2.7 – j0.6
2.5 – j1.2
2.05 – j0.65
Zin = Conjugate of source impedance with parallel
20 Ω resistor and 82 pF capacitor in series
with gate.
ZOL* = Conjugate of the load impedance at given
output power, voltage, frequency , and ηD > 50 %.
VDD = 7.5 V, IDQ = 150 mA, Pout = 8 W
520 1.9 – j3.5 2.1 – j0.4
Zo = 10
Ω
f
MHz Zin
ΩZOL*
Ω
135
155
175
6.2 – j15.1
5.33 – j17.0
8.29 – j16.9
2.3 – j1.8
2.5 – j0.8
2.6 – j0.6
Zin = Conjugate of source impedance with parallel
10 Ω resistor and 1000 pF capacitor in series
with gate.
ZOL* = Conjugate of the load impedance at given
output power, voltage, frequency , and ηD > 50 %.
VDD = 7.5 V, IDQ = 800 mA, Pout = 8 W
f = 400 MHz
Note: ZOL* was chosen based on tradeoffs between gain, drain efficiency , and device stability.
Zin
ZOL*
f = 400 MHz
520
520
175
Zin
f = 135 MHz 175
f = 135 MHz
MRF1507 MRF1507T1
8MOTOROLA RF DEVICE DATA
Table 1. Common Source Scattering Parameters (VDS = 7.5 Vdc)
ID = 150 mA
fS11 S21 S12 S22
f
MHz |S11|∠φ|S21|∠φ|S12|∠φ|S22|∠φ
50 0.76 –138 15.18 100 0.04 12 0.71 –141
100 0.77 –155 7.68 84 0.04 –3 0.72 –156
200 0.81 –162 3.53 65 0.03 –18 0.78 –162
300 0.85 –165 2.08 53 0.03 –27 0.83 –164
400 0.89 –167 1.37 44 0.03 –33 0.87 –166
500 0.91 –169 0.96 37 0.02 –36 0.90 –168
700 0.95 –171 0.54 27 0.01 –35 0.94 –170
850 0.96 –173 0.38 22 0.01 –30 0.95 –172
1000 0.97 –174 0.29 19 0.01 –19 0.96 –173
1200 0.98 –175 0.20 16 0.01 3 0.97 –174
ID = 800 mA
fS11 S21 S12 S22
f
MHz |S11|∠φ|S21|∠φ|S12|∠φ|S22|∠φ
50 0.82 –152 16.58 98 0.03 9 0.79 –161
100 0.81 –165 8.37 88 0.03 1 0.80 –169
200 0.82 –170 4.08 76 0.02 –8 0.81 –172
300 0.84 –172 2.60 68 0.02 –13 0.83 –173
400 0.85 –172 1.84 61 0.02 –17 0.84 –173
500 0.87 –172 1.38 54 0.02 –20 0.86 –173
700 0.90 –173 0.86 44 0.02 –21 0.89 –174
850 0.91 –174 0.64 38 0.01 –19 0.90 –174
1000 0.92 –175 0.49 33 0.01 –12 0.92 –175
1200 0.94 –176 0.36 29 0.01 2 0.93 –176
ID = 1.5 A
fS11 S21 S12 S22
f
MHz |S11|∠φ|S21|∠φ|S12|∠φ|S22|∠φ
50 0.83 –156 16.45 97 0.02 9 0.80 –164
100 0.83 –167 8.29 88 0.02 1 0.81 –171
200 0.83 –172 4.06 77 0.02 –6 0.82 –174
300 0.84 –173 2.61 70 0.02 –10 0.83 –174
400 0.86 –173 1.86 63 0.02 –13 0.85 –174
500 0.87 –174 1.41 57 0.02 –15 0.86 –174
700 0.89 –174 0.89 47 0.01 –16 0.88 –175
850 0.91 –175 0.67 41 0.01 –13 0.90 –175
1000 0.92 –175 0.52 36 0.01 –6 0.91 –175
1200 0.93 –176 0.38 31 0.01 8 0.92 –176
9
MRF1507 MRF1507T1MOTOROLA RF DEVICE DATA
APPLICATIONS INFORMATION
DESIGN CONSIDERATIONS
The MRF1507 is a common–source, RF power, N–Channel
enhancement mode, Lateral Metal–Oxide Semiconductor
Field–Effect T ransistor (MOSFET). Motorola Application Note
AN21 1A, “FETs in Theory and Practice”, is suggested reading
for those not familiar with the construction and characteristics
of FETs.
This surface mount packaged device was designed primari-
ly for VHF and UHF portable power amplifier applications.
Manufacturability is improved by utilizing the tape and reel
capability for fully automated pick and placement of parts.
However, care should be taken in the design process to insure
proper heat sinking of the device.
The major advantages of Lateral RF power MOSFETs
include high gain, simple bias systems, relative immunity from
thermal runaway, and the ability to withstand severely
mismatched loads without suffering damage.
MOSFET CAPACITANCES
The physical structure of a MOSFET results in capacitors
between all three terminals. The metal oxide gate structure
determines the capacitors from gate–to–drain (Cgd), and
gate–to–source (Cgs). The PN junction formed during fabrica-
tion of the RF MOSFET results in a junction capacitance from
drain–to–source (Cds). These capacitances are characterized
as input (Ciss), output (Coss) and reverse transfer (Crss)
capacitances on data sheets. The relationships between the
inter–terminal capacitances and those given on data sheets
are shown below. The Ciss can be specified in two ways:
1. Drain shorted to source and positive voltage at the gate.
2. Positive voltage of the drain in respect to source and
zero volts at the gate.
In the latter case, the numbers are lower . However, neither
method represents the actual operating conditions in RF
applications.
DRAIN CHARACTERISTICS
One critical figure of merit for a FET is its static resistance
in the full–on condition. This on–resistance, RDS(on), occurs in
the linear region of the output characteristic and is specified
at a specific gate–source voltage and drain current. The
drain–source voltage under these conditions is termed
VDS(on). For MOSFETs, VDS(on) has a positive temperature
coefficient at high temperatures because it contributes to the
power dissipation within the device.
BVDSS values for this device are higher than normally
required for typical applications. Measurement of BVDSS is not
recommended and may result in possible damage to the
device.
GATE CHARACTERISTICS
The gate of the RF MOSFET is a polysilicon material, and
is electrically isolated from the source by a layer of oxide. The
DC input resistance is very high – on the order of 109 Ω —
resulting in a leakage current of a few nanoamperes.
Gate control is achieved by applying a positive voltage to
the gate greater than the gate–to–source threshold voltage,
VGS(th).
Gate Voltage Rating — Never exceed the gate voltage
rating. Exceeding the rated VGS can result in permanent
damage to the oxide layer in the gate region.
Gate Termination — The gates of these devices are
essentially capacitors. Circuits that leave the gate open–cir-
cuited or floating should be avoided. These conditions can
result in turn–on of the devices due to voltage build–up on the
input capacitor due to leakage currents or pickup.
Gate Protection — These devices do not have an internal
monolithic zener diode from gate–to–source. If gate protection
is required, an external zener diode is recommended. Using
a resistor to keep the gate–to–source impedance low also
helps dampen transients and serves another important
function. V oltage transients on the drain can be coupled to the
gate through the parasitic gate–drain capacitance. If the
gate–to–source impedance and the rate of voltage change on
the drain are both high, then the signal coupled to the gate may
be large enough to exceed the gate–threshold voltage and
turn the device on.
MRF1507 MRF1507T1
10 MOTOROLA RF DEVICE DATA
DC BIAS
Since the MRF1507 is an enhancement mode FET, drain
current flows only when the gate is at a higher potential than
the source. RF power FET s operate optimally with a quiescent
drain current (IDQ), whose value is application dependent. The
MRF1507 was characterized at IDQ = 150 mA, which is the
suggested value of bias current for typical applications. For
special applications such as linear amplification, IDQ may have
to be selected to optimize the critical parameters.
The gate is a dc open circuit and draws no current.
Therefore, the gate bias circuit may generally be just a simple
resistive divider network. Some special applications may
require a more elaborate bias system.
GAIN CONTROL
Power output of the MRF1507 may be controlled to some
degree with a low power dc control signal applied to the gate,
thus facilitating applications such as manual gain control,
ALC/AGC and modulation systems. This characteristic is very
dependent on frequency and load line.
MOUNTING
The specified maximum thermal resistance of 2°C/W
assumes a majority of the 0.065″ x 0.180″ source contact on
the back side of the package is in good contact with an
appropriate heat sink. As with all RF power devices, the goal
of the thermal design should be to minimize the temperature
at the back side of the package.
AMPLIFIER DESIGN
Impedance matching networks similar to those used with
bipolar transistors are suitable for the MRF1507. For exam-
ples see Motorola Application Note AN721, “Impedance
Matching Networks Applied to RF Power Transistors.” Large–
signal impedances are provided, and will yield a good first
pass approximation.
Since RF power MOSFETs are triode devices, they are not
unilateral. This coupled with the very high gain of the
MRF1507 yields a device capable of self oscillation. Stability
may be achieved by techniques such as drain loading, input
shunt resistive loading, or output to input feedback. The RF
test fixture implements a parallel resistor and capacitor in
series with the gate, and has a load line selected for a higher
efficiency, lower gain, and more stable operating region.
Two–port stability analysis with the MRF1507
S–parameters provides a useful tool for selection of loading or
feedback circuitry to assure stable operation. See Motorola
Application Note AN215A, “RF Small–Signal Design Using
Two–Port Parameters” for a discussion of two port network
theory and stability.
11
MRF1507 MRF1507T1MOTOROLA RF DEVICE DATA
PACKAGE DIMENSIONS
CASE 466–02
ISSUE B
(PLD 1.5)
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH
3. RESIN BLEED/FLASH ALLOWABLE IN ZONE V, W,
AND X.
_
DIM MIN MAX MIN MAX
MILLIMETERSINCHES
A0.255 0.265 6.48 6.73
B0.225 0.235 5.72 5.97
C0.065 0.072 1.65 1.83
D0.130 0.150 3.30 3.81
E0.021 0.026 0.53 0.66
F0.026 0.044 0.66 1.12
G0.050 0.070 1.27 1.78
H0.045 0.063 1.14 1.60
K0.273 0.285 6.93 7.24
L0.245 0.255 6.22 6.48
N0.230 0.240 5.84 6.10
P0.000 0.008 0.00 0.20
Q0.055 0.063 1.40 1.60
R0.200 0.210 5.08 5.33
S0.006 0.012 0.15 0.31
U0.006 0.012 0.15 0.31
ZONE V 0.000 0.021 0.00 0.53
ZONE W 0.000 0.010 0.00 0.25
ZONE X 0.000 0.010 0.00 0.25
STYLE 1:
PIN 1. DRAIN
2. GATE
3. SOURCE
4. SOURCE
2
34
1
AF
R
L
NK
D
B
Q
E
PC
ÉÉÉÉ
ÉÉÉÉ
ÉÉÉÉ
ÉÉÉÉ
ÉÉÉÉ
ÉÉÉÉ
G
H
ZONE X
ZONE W
0.89 (0.035) X 45 5
"
_
_
10 DRAFT
ZONE V
S
U
ÉÉÉ
ÉÉÉ
RESIN BLEED/FLASH ALLOWABLE
J0.160 0.180 4.06 4.57
J
MRF1507 MRF1507T1
12 MOTOROLA RF DEVICE DATA
Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding
the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and
specifically disclaims any and all liability, including without limitation consequential or incidental damages. “Typical” parameters which may be provided in Motorola
data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals”
must be validated for each customer application by customer’s technical experts. Motorola does not convey any license under its patent rights nor the rights of
others. Motorola products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other
applications intended to support or sustain life, or for any other application in which the failure of the Motorola product could create a situation where personal injury
or death may occur. Should Buyer purchase or use Motorola products for any such unintended or unauthorized application, Buyer shall indemnify and hold Motorola
and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees
arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that
Motorola was negligent regarding the design or manufacture of the part. Motorola and are registered trademarks of Motorola, Inc. Motorola, Inc. is an Equal
Opportunity/Af firmative Action Employer.
Mfax is a trademark of Motorola, Inc.
How to reach us:
USA/EUROPE/Locations Not Listed: Motorola Literature Distribution; JAPAN: Nippon Motorola Ltd.: SPD, Strategic Planning Office, 141,
P.O. Box 5405, Denver, Colorado 80217. 1–303–675–2140 or 1–800–441–2447 4–32–1 Nishi–Gotanda, Shagawa–ku, Tokyo, Japan. 03–5487–8488
Customer Focus Center: 1–800–521–6274
Mfax: RMFAX0@email.sps.mot.com – TOUCHTONE 1–602–244–6609 ASIA/PACIFIC: Motorola Semiconductors H.K. Ltd.; 8B Tai Ping Industrial Park,
Motorola Fax Ba ck Sys tem – US & Canada ONLY 1–800–774–1848 51 Ting Kok Road, Tai Po, N.T., Hong Kong. 852–26629298
– http://sps.motorola.com/mfax/
HOME PAGE: http://motorola.com/sps/
◊MRF1507/D
