MOTOROLA Order this document by MRF1511/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET The MRF1511T1 is designed for broadband commercial and industrial applications at frequencies to 175 MHz. The high gain and broadband performance of this device makes it ideal for large-signal, common source amplifier applications in 7.5 volt portable FM equipment. * Specified Performance @ 175 MHz, 7.5 Volts Output Power -- 8 Watts Power Gain -- 11.5 dB Efficiency -- 55% D * Capable of Handling 20:1 VSWR, @ 9.5 Vdc, 175 MHz, 2 dB Overdrive * Excellent Thermal Stability * Characterized with Series Equivalent Large-Signal Impedance Parameters * Broadband UHF/VHF Demonstration Amplifier Information Available Upon Request G * RF Power Plastic Surface Mount Package * Available in Tape and Reel. T1 Suffix = 1,000 Units per 12 mm, 7 Inch Reel. MRF1511T1 175 MHz, 8 W, 7.5 V LATERAL N-CHANNEL BROADBAND RF POWER MOSFET CASE 466-02, STYLE 1 (PLD-1.5) PLASTIC S MAXIMUM RATINGS Rating Symbol Value Unit Drain-Source Voltage VDSS 40 Vdc Gate-Source Voltage VGS 20 Vdc Drain Current -- Continuous ID 4 Adc Total Device Dissipation @ TC = 25C (1) Derate above 25C PD 62.5 0.5 Watts W/C Storage Temperature Range Tstg - 65 to +150 C TJ 150 C Symbol Max Unit RJC 2 C/W Operating Junction Temperature THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Case (1) Calculated based on the formula PD = TJ - TC RJC NOTE - CAUTION - MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and packaging MOS devices should be observed. REV 1 MOTOROLA RF DEVICE DATA Motorola, Inc. 2000 MRF1511T1 1 ELECTRICAL CHARACTERISTICS (TC = 25C unless otherwise noted) Characteristic Symbol Min Typ Max Unit Zero Gate Voltage Drain Current (VDS = 35 Vdc, VGS = 0) IDSS -- -- 1 Adc Gate-Source Leakage Current (VGS = 10 Vdc, VDS = 0) IGSS -- -- 1 Adc Gate Threshold Voltage (VDS = 7.5 Vdc, ID = 170 A) VGS(th) 1.0 1.6 2.1 Vdc Drain-Source On-Voltage (VGS = 10 Vdc, ID = 1 Adc) VDS(on) -- 0.4 -- Vdc Input Capacitance (VDS = 7.5 Vdc, VGS = 0, f = 1 MHz) Ciss -- 100 -- pF Output Capacitance (VDS = 7.5 Vdc, VGS = 0, f = 1 MHz) Coss -- 53 -- pF Reverse Transfer Capacitance (VDS = 7.5 Vdc, VGS = 0, f = 1 MHz) Crss -- 8 -- pF Common-Source Amplifier Power Gain (VDD = 7.5 Vdc, Pout = 8 Watts, IDQ = 150 mA, f = 175 MHz) Gps 10 11.5 -- dB Drain Efficiency (VDD = 7.5 Vdc, Pout = 8 Watts, IDQ = 150 mA, f = 175 MHz) 50 55 -- % OFF CHARACTERISTICS ON CHARACTERISTICS DYNAMIC CHARACTERISTICS FUNCTIONAL TESTS (In Motorola Test Fixture) MRF1511T1 2 MOTOROLA RF DEVICE DATA VGG + C8 C6 C7 R4 B1 B2 C18 C17 + C15 C16 VDD R3 L4 C5 R2 Z6 Z7 Z8 L3 Z9 N2 Z10 R1 N1 Z1 L2 Z2 Z3 Z4 Z5 DUT C14 C9 C1 RF INPUT L1 C2 C10 C11 C12 RF OUTPUT C13 C3 C4 B1, B2 C1, C5, C18 C2, C10, C12 C3 C4 C6, C15 C7, C16 C8, C17 C9 C11 C13 C14 L1, L3 L2 L4 N1, N2 15 , 0805 Chip Resistor 1.0 k, 1/8 W Resistor 1.0 k, 0805 Chip Resistor 33 k, 1/8 W Resistor 0.200 x 0.080 Microstrip 0.755 x 0.080 Microstrip 0.300 x 0.080 Microstrip 0.065 x 0.080 Microstrip 0.260 x 0.223 Microstrip 0.095 x 0.080 Microstrip 0.418 x 0.080 Microstrip 1.057 x 0.080 Microstrip 0.120 x 0.080 Microstrip Glass Teflon, 31 mils, 2 oz. Copper R1 R2 R3 R4 Z1 Z2 Z3 Z4 Z5, Z6 Z7 Z8 Z9 Z10 Board Short Ferrite Bead, Fair Rite Products (2743021446) 120 pF, 100 mil Chip Capacitor 0 to 20 pF, Trimmer Capacitor 33 pF, 100 mil Chip Capacitor 68 pF, 100 mil Chip Capacitor 10 F, 50 V Electrolytic Capacitor 1,200 pF, 100 mil Chip Capacitor 0.1 F, 100 mil Chip Capacitor 150 pF, 100 mil Chip Capacitor 43 pF, 100 mil Chip Capacitor 24 pF, 100 mil Chip Capacitor 300 pF, 100 mil Chip Capacitor 12.5 nH, A04T, Coilcraft 26 nH, 4 Turn, Coilcraft 55.5 nH, 5 Turn, Coilcraft Type N Flange Mount Figure 1. 135 - 175 MHz Broadband Test Circuit TYPICAL CHARACTERISTICS, 135 - 175 MHz -5 VDD = 7.5 V IRL, INPUT RETURN LOSS (dB) Pout , OUTPUT POWER (WATTS) 10 8 155 MHz 135 MHz 6 175 MHz 4 2 -10 135 MHz 175 MHz -15 155 MHz -20 VDD = 7.5 V 0 -25 0 0.1 0.2 0.3 0.4 0.5 Pin, INPUT POWER (WATTS) 0.6 Figure 2. Output Power versus Input Power MOTOROLA RF DEVICE DATA 0.7 1 2 3 6 7 4 5 Pout, OUTPUT POWER (WATTS) 8 9 10 Figure 3. Input Return Loss versus Output Power MRF1511T1 3 TYPICAL CHARACTERISTICS, 135 - 175 MHz 16 70 155 MHz 155 MHz 60 Eff, DRAIN EFFICIENCY (%) 14 GAIN (dB) 135 MHz 175 MHz 12 10 8 50 175 MHz 40 30 20 VDD = 7.5 V 10 VDD = 7.5 V 0 6 2 1 3 6 7 8 4 5 Pout, OUTPUT POWER (WATTS) 9 10 0 Figure 4. Gain versus Output Power 2 3 4 5 6 7 Pout, OUTPUT POWER (WATTS) 8 9 10 80 Eff, DRAIN EFFICIENCY (%) 11 10 9 155 MHz 8 135 MHz 175 MHz 7 6 70 155 MHz 60 135 MHz 175 MHz 50 VDD = 7.5 V Pin = 27 dBm VDD = 7.5 V Pin = 27 dBm 5 4 40 0 200 400 600 IDQ, BIASING CURRENT (mA) 800 200 0 1000 Figure 6. Output Power versus Biasing Current 600 400 IDQ, BIASING CURRENT (mA) 800 1000 Figure 7. Drain Efficiency versus Biasing Current 80 14 12 175 MHz 10 Eff, DRAIN EFFICIENCY (%) Pout , OUTPUT POWER (WATTS) 1 Figure 5. Drain Efficiency versus Output Power 12 Pout , OUTPUT POWER (WATTS) 135 MHz 135 MHz 155 MHz 8 6 155 MHz 60 135 MHz 175 MHz 50 40 IDQ = 150 mA Pin = 27 dBm 4 70 IDQ = 150 mA Pin = 27 dBm 30 2 4 6 8 10 12 14 VDD, SUPPLY VOLTAGE (VOLTS) Figure 8. Output Power versus Supply Voltage MRF1511T1 4 16 4 6 8 10 12 14 16 VDD, SUPPLY VOLTAGE (VOLTS) Figure 9. Drain Efficiency versus Supply Voltage MOTOROLA RF DEVICE DATA VGG + C8 C6 C7 B1 R4 B2 C16 C15 C14 + C13 VDD R3 L4 C5 R2 Z6 Z7 L3 Z8 Z9 N2 Z10 R1 N1 RF INPUT Z1 C1 L1 Z2 Z3 Z4 Z5 DUT C12 C9 C2 C10 RF OUTPUT C11 C3 C4 B1, B2 N1, N2 R1 R2 R3 R4 Z1 Z2 Z3 Z4 Z5, Z6 Z7 Z8 Z9 Z10 Board Short Ferrite Bead, Fair Rite Products (2743021446) 330 pF, 100 mil Chip Capacitor 43 pF, 100 mil Chip Capacitor 0 to 20 pF, Trimmer Capacitor 24 pF, 100 mil Chip Capacitor 120 pF, 100 mil Chip Capacitor 10 F, 50 V Electrolytic Capacitor 1,200 pF, 100 mil Chip Capacitor 0.1 F, 100 mil Chip Capacitor 380 pF, 100 mil Chip Capacitor 75 pF, 100 mil Chip Capacitor 82 nH, Coilcraft 55.5 nH, 5 Turn, Coilcraft 39 nH, 6 Turn, Coilcraft C1, C12 C2 C3, C10 C4 C5, C16 C6, C13 C7, C14 C8, C15 C9 C11 L1 L2 L3 Type N Flange Mount 15 , 0805 Chip Resistor 51 , 1/2 W Resistor 100 , 0805 Chip Resistor 33 k, 1/8 W Resistor 0.136 x 0.080 Microstrip 0.242 x 0.080 Microstrip 1.032 x 0.080 Microstrip 0.145 x 0.080 Microstrip 0.260 x 0.223 Microstrip 0.134 x 0.080 Microstrip 0.490 x 0.080 Microstrip 0.872 x 0.080 Microstrip 0.206 x 0.080 Microstrip Glass Teflon, 31 mils, 2 oz. Copper Figure 10. 66 - 88 MHz Broadband Test Circuit TYPICAL CHARACTERISTICS, 66 - 88 MHz 10 0 8 88 MHz VDD = 7.5 V -2 IRL, INPUT RETURN LOSS (dB) Pout , OUTPUT POWER (WATTS) 77 MHz 66 MHz 6 4 2 VDD = 7.5 V -4 -6 -8 88 MHz -10 -12 -14 66 MHz -16 77 MHz -18 -20 0 0 0.1 0.2 0.3 0.4 0.5 Pin, INPUT POWER (WATTS) 0.6 Figure 11. Output Power versus Input Power MOTOROLA RF DEVICE DATA 0.7 1 2 3 4 5 6 7 Pout, OUTPUT POWER (WATTS) 8 9 10 Figure 12. Input Return Loss versus Output Power MRF1511T1 5 TYPICAL CHARACTERISTICS, 66 - 88 MHz 18 70 Eff, DRAIN EFFICIENCY (%) GAIN (dB) 77 MHz 88 MHz 14 88 MHz 60 66 MHz 16 12 10 50 40 30 20 VDD = 7.5 V 10 VDD = 7.5 V 0 8 1 2 3 4 6 7 8 5 Pout, OUTPUT POWER (WATTS) 9 1 10 Figure 13. Gain versus Output Power 3 4 6 7 5 Pout, OUTPUT POWER (WATTS) 8 9 10 80 11 10 Eff, DRAIN EFFICIENCY (%) Pout , OUTPUT POWER (WATTS) 2 Figure 14. Drain Efficiency versus Output Power 12 77 MHz 9 88 MHz 8 66 MHz 7 6 70 60 88 MHz 77 MHz 50 66 MHz VDD = 7.5 V Pin = 25.7 dBm VDD = 7.5 V Pin = 25.7 dBm 5 4 40 0 200 400 600 IDQ, BIASING CURRENT (mA) 800 0 1000 Figure 15. Output Power versus Biasing Current 200 600 400 IDQ, BIASING CURRENT (mA) 800 1000 Figure 16. Drain Efficiency versus Biasing Current 80 14 12 Eff, DRAIN EFFICIENCY (%) Pout , OUTPUT POWER (WATTS) 66 MHz 77 MHz 10 77 MHz 8 66 MHz 88 MHz 6 60 88 MHz 50 77 MHz 66 MHz 40 IDQ = 150 mA Pin = 25.7 dBm 4 70 IDQ = 150 mA Pin = 25.7 dBm 30 2 5 6 7 8 9 VDD, SUPPLY VOLTAGE (VOLTS) Figure 17. Output Power versus Supply Voltage MRF1511T1 6 10 5 6 7 8 9 10 VDD, SUPPLY VOLTAGE (VOLTS) Figure 18. Drain Efficiency versus Supply Voltage MOTOROLA RF DEVICE DATA f = 175 MHz Zin Zo = 10 155 77 f = 88 MHz ZOL* 66 135 Zin f = 88 MHz 77 66 155 ZOL* f = 175 MHz 135 VDD = 7.5 V, IDQ = 150 mA, Pout = 8 W Zin VDD = 7.5 V, IDQ = 150 mA, Pout = 8 W f MHz Zin ZOL* f MHz Zin ZOL* 135 20.1 -j0.5 2.53 -j2.61 66 25.3 -j0.31 3.62 -j0.751 155 17.0 +j3.6 3.01 -j2.48 77 25.6 +j3.62 3.59 -j0.129 175 15.2 +j7.9 2.52 -j3.02 88 26.7 +j6.79 3.37 -j0.173 = Complex conjugate of source impedance with parallel 15 resistor and 68 pF capacitor in series with gate. (See Figure 1). Zin ZOL* = Complex conjugate of the load impedance at given output power, voltage, frequency, and D > 50 %. = Complex conjugate of source impedance with parallel 15 resistor and 24 pF capacitor in series with gate. (See Figure 10). ZOL* = Complex conjugate of the load impedance at given output power, voltage, frequency, and D > 50 %. Note: ZOL* was chosen based on tradeoffs between gain, drain efficiency, and device stability. Input Matching Network Output Matching Network Device Under Test Z in Z * OL Figure 19. Series Equivalent Input and Output Impedance MOTOROLA RF DEVICE DATA MRF1511T1 7 Table 1. Common Source Scattering Parameters (VDD = 7.5 Vdc) IDQ = 150 mA S11 f MHz |S11| 30 0.88 50 S21 S12 S22 |S21| |S12| -165 18.92 95 0.015 8 0.84 -169 0.88 -171 11.47 91 0.016 -5 0.84 -173 100 0.87 -175 5.66 85 0.016 -7 0.84 -176 150 0.87 -176 3.75 82 0.015 -5 0.85 -176 200 0.87 -177 2.78 78 0.014 -6 0.84 -176 250 0.87 -177 2.16 75 0.014 -10 0.85 -176 300 0.88 -177 1.77 72 0.012 -17 0.86 -176 350 0.88 -177 1.49 69 0.013 -11 0.86 -176 400 0.88 -177 1.26 66 0.013 -17 0.87 -175 450 0.88 -177 1.08 64 0.011 -20 0.87 -175 500 0.89 -176 0.96 63 0.012 -20 0.88 -175 |S22| IDQ = 800 mA S11 f MHz |S11| 30 0.89 50 S21 S12 S22 |S21| |S12| |S22| -166 18.89 95 0.014 10 0.85 -170 0.88 -172 11.44 91 0.015 8 0.84 -174 100 0.87 -175 5.65 86 0.016 -2 0.85 -176 150 0.87 -177 3.74 82 0.014 -8 0.84 -177 200 0.87 -177 2.78 78 0.013 -18 0.85 -177 250 0.88 -177 2.16 75 0.012 -11 0.85 -176 300 0.88 -177 1.77 73 0.015 -15 0.86 -176 350 0.88 -177 1.50 70 0.009 -7 0.87 -176 400 0.88 -177 1.26 67 0.012 -3 0.87 -176 450 0.88 -177 1.09 65 0.012 -18 0.87 -175 500 0.89 -177 0.97 64 0.009 -10 0.88 -175 IDQ = 1.5 A S11 S21 S12 S22 f MHz |S11| |S21| |S12| 30 0.90 -168 17.89 95 0.013 2 0.86 -172 50 0.89 -173 10.76 91 0.013 3 0.86 -175 100 0.88 -176 5.32 86 0.014 -19 0.86 -177 150 0.88 -177 3.53 83 0.013 -6 0.86 -177 200 0.88 -177 2.63 80 0.011 -4 0.86 -177 250 0.88 -178 2.05 77 0.012 -14 0.86 -177 300 0.88 -177 1.69 75 0.013 -2 0.87 -177 350 0.89 -177 1.43 72 0.010 -9 0.87 -176 400 0.89 -177 1.22 70 0.014 -3 0.88 -176 450 0.89 -177 1.06 68 0.011 -8 0.88 -176 500 0.89 -177 0.94 67 0.011 -15 0.88 -176 MRF1511T1 8 |S22| MOTOROLA RF DEVICE DATA APPLICATIONS INFORMATION DESIGN CONSIDERATIONS This device is a common-source, RF power, N-Channel enhancement mode, Lateral Metal-Oxide Semiconductor Field-Effect Transistor (MOSFET). Motorola Application Note AN211A, "FETs in Theory and Practice", is suggested reading for those not familiar with the construction and characteristics of FETs. This surface mount packaged device was designed primarily for VHF and UHF portable power amplifier applications. Manufacturability is improved by utilizing the tape and reel capability for fully automated pick and placement of parts. However, care should be taken in the design process to insure proper heat sinking of the device. The major advantages of Lateral RF power MOSFETs include high gain, simple bias systems, relative immunity from thermal runaway, and the ability to withstand severely mismatched loads without suffering damage. MOSFET CAPACITANCES The physical structure of a MOSFET results in capacitors between all three terminals. The metal oxide gate structure determines the capacitors from gate-to-drain (Cgd), and gate-to-source (Cgs). The PN junction formed during fabrication of the RF MOSFET results in a junction capacitance from drain-to-source (Cds). These capacitances are characterized as input (Ciss), output (Coss) and reverse transfer (Crss) capacitances on data sheets. The relationships between the inter-terminal capacitances and those given on data sheets are shown below. The Ciss can be specified in two ways: 1. Drain shorted to source and positive voltage at the gate. 2. Positive voltage of the drain in respect to source and zero volts at the gate. In the latter case, the numbers are lower. However, neither method represents the actual operating conditions in RF applications. Drain Cgd Gate Cds Ciss = Cgd + Cgs Coss = Cgd + Cds Crss = Cgd Cgs Source DRAIN CHARACTERISTICS One critical figure of merit for a FET is its static resistance in the full-on condition. This on-resistance, RDS(on), occurs in the linear region of the output characteristic and is specified at a specific gate-source voltage and drain current. The drain-source voltage under these conditions is termed VDS(on). For MOSFETs, VDS(on) has a positive temperature MOTOROLA RF DEVICE DATA coefficient at high temperatures because it contributes to the power dissipation within the device. BVDSS values for this device are higher than normally required for typical applications. Measurement of BVDSS is not recommended and may result in possible damage to the device. GATE CHARACTERISTICS The gate of the RF MOSFET is a polysilicon material, and is electrically isolated from the source by a layer of oxide. The DC input resistance is very high - on the order of 109 -- resulting in a leakage current of a few nanoamperes. Gate control is achieved by applying a positive voltage to the gate greater than the gate-to-source threshold voltage, VGS(th). Gate Voltage Rating -- Never exceed the gate voltage rating. Exceeding the rated VGS can result in permanent damage to the oxide layer in the gate region. Gate Termination -- The gates of these devices are essentially capacitors. Circuits that leave the gate open-circuited or floating should be avoided. These conditions can result in turn-on of the devices due to voltage build-up on the input capacitor due to leakage currents or pickup. Gate Protection -- These devices do not have an internal monolithic zener diode from gate-to-source. If gate protection is required, an external zener diode is recommended. Using a resistor to keep the gate-to-source impedance low also helps dampen transients and serves another important function. Voltage transients on the drain can be coupled to the gate through the parasitic gate-drain capacitance. If the gate-to-source impedance and the rate of voltage change on the drain are both high, then the signal coupled to the gate may be large enough to exceed the gate-threshold voltage and turn the device on. DC BIAS Since this device is an enhancement mode FET, drain current flows only when the gate is at a higher potential than the source. RF power FETs operate optimally with a quiescent drain current (IDQ), whose value is application dependent. This device was characterized at IDQ = 150 mA, which is the suggested value of bias current for typical applications. For special applications such as linear amplification, IDQ may have to be selected to optimize the critical parameters. The gate is a dc open circuit and draws no current. Therefore, the gate bias circuit may generally be just a simple resistive divider network. Some special applications may require a more elaborate bias system. GAIN CONTROL Power output of this device may be controlled to some degree with a low power dc control signal applied to the gate, thus facilitating applications such as manual gain control, ALC/AGC and modulation systems. This characteristic is very dependent on frequency and load line. MRF1511T1 9 MOUNTING The specified maximum thermal resistance of 2C/W assumes a majority of the 0.065 x 0.180 source contact on the back side of the package is in good contact with an appropriate heat sink. As with all RF power devices, the goal of the thermal design should be to minimize the temperature at the back side of the package. Refer to Motorola Application Note AN4005/D, "Thermal Management and Mounting Method for the PLD-1.5 RF Power Surface Mount Package," and Engineering Bulletin EB209/D, "Mounting Method for RF Power Leadless Surface Mount Transistor" for additional information. AMPLIFIER DESIGN Impedance matching networks similar to those used with bipolar transistors are suitable for this device. For examples see Motorola Application Note AN721, "Impedance Matching Networks Applied to RF Power Transistors." Large-signal MRF1511T1 10 impedances are provided, and will yield a good first pass approximation. Since RF power MOSFETs are triode devices, they are not unilateral. This coupled with the very high gain of this device yields a device capable of self oscillation. Stability may be achieved by techniques such as drain loading, input shunt resistive loading, or output to input feedback. The RF test fixture implements a parallel resistor and capacitor in series with the gate, and has a load line selected for a higher efficiency, lower gain, and more stable operating region. Two-port stability analysis with this device's S-parameters provides a useful tool for selection of loading or feedback circuitry to assure stable operation. See Motorola Application Note AN215A, "RF Small-Signal Design Using Two-Port Parameters" for a discussion of two port network theory and stability. MOTOROLA RF DEVICE DATA NOTES MOTOROLA RF DEVICE DATA MRF1511T1 11 PACKAGE DIMENSIONS L R C A F U ZONE X 4 3 EEEE EEEE EEEE EEEE EEEE EEEE EEE EEE 10_DRAFT P 2 N K S 0.095 2.41 0.115 2.92 ZONE V H G 1 D B Q 0.146 3.71 0.115 2.92 0.020 0.51 J E 0.89 (0.035) X 45 _ STYLE 1: PIN 1. 2. 3. 4. ZONE W "5 _ DRAIN GATE SOURCE SOURCE RESIN BLEED/FLASH ALLOWABLE NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH 3. RESIN BLEED/FLASH ALLOWABLE IN ZONE V, W, AND X. CASE 466-02 ISSUE B inches mm SOLDER FOOTPRINT DIM A B C D E F G H J K L N P Q R S U ZONE V ZONE W ZONE X INCHES MIN MAX 0.255 0.265 0.225 0.235 0.065 0.072 0.130 0.150 0.021 0.026 0.026 0.044 0.050 0.070 0.045 0.063 0.160 0.180 0.273 0.285 0.245 0.255 0.230 0.240 0.000 0.008 0.055 0.063 0.200 0.210 0.006 0.012 0.006 0.012 0.000 0.021 0.000 0.010 0.000 0.010 MILLIMETERS MIN MAX 6.48 6.73 5.72 5.97 1.65 1.83 3.30 3.81 0.53 0.66 0.66 1.12 1.27 1.78 1.14 1.60 4.06 4.57 6.93 7.24 6.22 6.48 5.84 6.10 0.00 0.20 1.40 1.60 5.08 5.33 0.15 0.31 0.15 0.31 0.00 0.53 0.00 0.25 0.00 0.25 Motorola reserves the right to make changes without further notice to any products herein. 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Mfax is a trademark of Motorola, Inc. How to reach us: USA / EUROPE / Locations Not Listed: Motorola Literature Distribution; P.O. Box 5405, Denver, Colorado 80217. 1-303-675-2140 or 1-800-441-2447 JAPAN: Motorola Japan Ltd.; SPS, Technical Information Center, 3-20-1, Minami-Azabu. Minato-ku, Tokyo 106-8573 Japan. 81-3-3440-3569 Customer Focus Center: 1-800-521-6274 Mfax: RMFAX0@email.sps.mot.com - TOUCHTONE 1-602-244-6609 ASIA / PACIFIC: Motorola Semiconductors H.K. Ltd.; Silicon Harbour Centre, Motorola Fax Back System - US & Canada ONLY 1-800-774-1848 2, Dai King Street, Tai Po Industrial Estate, Tai Po, N.T., Hong Kong. - http://sps.motorola.com/mfax/ 852-26668334 HOME PAGE: http://www.motorola.com/semiconductors/ MRF1511T1 12 MOTOROLA RF DEVICEMRF1511/D DATA