1
Dual IGBTMOD™
NF-Series Module
150 Amperes / 600 Volts
CM150DY-12NF
Powerex, Inc., 200 E. Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272
Outline Drawing and Circuit Diagram
Description:
Powerex IGBTMOD™ Modules
are designed for use in switching
applications. Each module consists
of two IGBT Transistors in a half-
bridge configuration with each t ra n -
sistor having a reverse-connected
super-fast recover y free-wheel
diode. All components and inter-
connects are isolated from the
heat sinking baseplate, offer ing
simplified system assembly and
thermal management.
Features:
□Low Drive Power
□Low VCE(sat)
□Discrete Super-Fast Recover y
Free-Wheel Diode
□Isolated Baseplate for Easy
Heat Sinking
Applications:
□AC Motor Control
□UPS
□Batter y Powered Supplies
Ordering Information:
Example: Select the complete
par t module number you desire
from the table below -i.e.
CM150DY-12NF is a 600V (VCES),
150 Ampere Dual IGBTMOD™
Power Module.
Type Current Rating VCES
Amperes Volts (x 50)
CM 150 12
A
EE
FF
BN
L
(2 PLACES) DM NUTS
(3 PLACES)
J
G
G
H
KKK
PPP T THICK
U WIDTH
QQ
V
C
S
R
G2
E2
E1
G1
C1E2C2E1
TC MEASURED POINT
(BASEPLATE)
LABEL
C2E1 E2 C1
G2
E2
E1
G1
Dimensions Inches Millimeters
A3.70 94.0
B1.89 48.0
C 1.14+0.04/-0.02 29.0+1.0/-0.5
D3.15±0.01 80.0±0.25
E0.67 17.0
F0.91 23.0
G0.16 4.0
H0.71 18.0
J0.51 13.0
K0.47 12.0
Dimensions Inches Millimeters
L0.26 Dia. Dia. 6.5
MM5 Metric M5
N0.79 20.0
P0.63 16.0
Q0.28 7.0
R0.83 21.2
S0.30 7.5
T0.02 0.5
U0.110 2.8
V0.16 4.0
2
CM150DY-12NF
Dual IGBTMOD™ NF-Series Module
150 Amperes / 600 Volts
Powerex, Inc., 200 E. Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272
Absolute Maximum Ratings, Tj = 25 °C unless otherwise specified
Ratings Symbol CM150DY-12NF Units
Junction Temperature Tj–40 to 150 °C
Storage Temperature Tstg –40 to 125 °C
Collector-Emitter Voltage (G-E Short) VCES 600 Volts
Gate-Emitter Voltage (C-E Short) VGES ±20 Volts
Collector Current*** (DC, TC' = 97°C) IC 150 Amperes
Peak Collector Current ICM 300* Amperes
Emitter Current** (TC = 25°C) IE150 Amperes
Peak Emitter Current** IEM 300* Amperes
Maximum Collector Dissipation (TC = 25°C, Tj ≤ 150°C) PC590 Watts
Mounting Torque, M5 Main Terminal — 30 in-lb
Mounting Torque, M6 Mounting — 40 in-lb
Weight —310 Grams
Isolation Voltage (Main Terminal to Baseplate, AC 1 min.) VISO 2500 Volts
Static Electrical Characteristics, Tj = 25 °C unless otherwise specified
Characteristics Symbol Test Conditions Min. Typ. Max. Units
Collector-Cutoff Current ICES VCE = VCES, VGE = 0V — — 1.0 mA
Gate Leakage Current IGES VGE = VGES, VCE = 0V — — 0.5 µA
Gate-Emitter Threshold V oltage VGE(th) IC = 15mA, VCE = 10V 5.0 6.0 7.5 Volts
Collector-Emitter Saturation Voltage VCE(sat) IC = 150A, VGE = 15V, Tj = 25°C—1.7 2.2 Volts
IC = 150A, VGE = 15V, Tj = 125°C—1.7 — Volts
Total Gate Charge QGVCC = 300V, IC = 150A, VGE = 15V — 600 — nC
Emitter-Collector Voltage** VEC IE = 150A, VGE = 0V — — 2.6 Volts
Dynamic Electrical Characteristics, Tj = 25 °C unless otherwise specified
Characteristics Symbol Test Conditions Min. Typ. Max. Units
Input Capacitance Cies —— 23nf
Output Capacitance Coes VCE = 10V, VGE = 0V — — 2.8 nf
Re verse Transf er Capacitance Cres —— 0.9 nf
Inductive Turn-on Delay Time td(on) ——120 ns
Load Rise Time trVCC = 300V, IC = 150A, — — 100 ns
Switch Turn-off Delay Time td(off) VGE1 = VGE2 = 15V, RG = 4.2Ω,——300 ns
Time F all Time tfInductive Load — — 300 ns
Diode Reverse Recovery Time** trr Switching Operation, — — 150 ns
Diode Reverse Recovery Charge** Qrr IE = 150A — 2.5 — µC
*Pulse width and repetition rate should be such that device junction temperature (Tj) does not exceed Tj(max) rating.
**Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi).
*** Tc' measured point is just under the chips. If this value is used, Rth(f-a) should be measured just under the chips
3
CM150DY-12NF
Dual IGBTMOD™ NF-Series Module
150 Amperes / 600 Volts
Powerex, Inc., 200 E. Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272
Thermal and Mechanical Characteristics, Tj = 25 °C unless otherwise specified
Characteristics Symbol Test Conditions Min. Typ. Max. Units
Thermal Resistance, Junction to Case Rth(j-c)QPer IGBT 1/2 Module, TC Reference — — 0.21 °C/W
Point per Outline Drawing
Thermal Resistance, Junction to Case Rth(j-c)DPer FWDi 1/2 Module, TC Reference — — 0.47 °C/W
Point per Outline Drawing
Thermal Resistance, Junction to Case Rth(j-c)'Q Per IGBT 1/2 Module, — — 0.16 °C/W
TC Reference Point Under Chips
Contact Thermal Resistance Rth(c-f) Per 1/2 Module, Thermal Grease Applied — 0.07 — °C/W
External Gate Resistance RG4.2 — 42 Ω
COLLECTOR-EMITTER VOLTAGE, V
CE
, (VOLTS)
CAPACITANCE, C
ies
, C
oes
, C
res
, (nF)
CAPACITANCE VS. VCE
(TYPICAL)
100102
102
101
100
10-1 101
01 3425
101
EMITTER-COLLECTOR VOLTAGE, V
EC
, (VOLTS)
FREE-WHEEL DIODE
FORWARD CHARACTERISTICS
(TYPICAL)
10
2
10
3
EMITTER CURRENT, I
E
, (AMPERES)
GATE-EMITTER VOLTAGE, V
GE
, (VOLTS)
COLLECTOR-EMITTER
SATURATION VOLTAGE, VCE(sat), (VOLTS)
COLLECTOR-EMITTER
SATURATION VOLTAGE CHARACTERISTICS
(TYPICAL)
10
6810 1412 16 18 20
8
6
4
2
0
Tj = 25°C
COLLECTOR-CURRENT, I
C
, (AMPERES)
COLLECTOR-EMITTER
SATURATION VOLTAGE, V
CE(sat)
, (VOLTS
)
COLLECTOR-EMITTER
SATURATION VOLTAGE CHARACTERISTICS
(TYPICAL)
4
3
050 150
2
1
0300200 250
VGE = 15V
Tj = 25°C
Tj = 125°C
Tj = 25°C
Tj = 125°C VGE = 0V
Cies
Coes
Cres
IC = 300A
IC = 150A
IC = 60A
COLLECTOR-EMITTER VOLTAGE, V
CE
, (VOLTS)
COLLECTOR CURRENT, I
C
, (AMPERES)
OUTPUT CHARACTERISTICS
(TYPICAL)
0246810
50
0
VGE =
20V
10
11
12
15
13
9
8
Tj = 25
o
C
100
150
300
200
250
100
10
-1
COLLECTOR CURRENT, I
C
, (AMPERES)
10
3
10
1
10
2
10
2
10
0
10
1
SWITCHING TIME, (ns)
HALF-BRIDGE
SWITCHING CHARACTERISTICS
(TYPICAL)
td(off)
td(on)
tr
VCC = 300V
VGE = ±15V
RG = 4.2Ω
Tj = 125°C
Inductive Load
tf
103
4
CM150DY-12NF
Dual IGBTMOD™ NF-Series Module
150 Amperes / 600 Volts
Powerex, Inc., 200 E. Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272
TIME, (s)
TRANSIENT THERMAL
IMPEDANCE CHARACTERISTICS
(IGBT & FWDi)
10
0
10
-5
10
-4
10
-3
10
-1
10
-2
10
-3
10
-3
10
-2
10
-1
10
0
10
1
10
-1
10
-2
10
-3
Z
th
= R
th
¥ (NORMALIZED VALUE)
Single Pulse
T
C
= 25°C
Per Unit Base =
R
th(j-c)
=
0.21°C/W
(IGBT)
R
th(j-c)
=
0.47°C/W
(FWDi)
NORMALIZED TRANSIENT THERMAL IMPEDANCE, Z
th(j-c')
GATE CHARGE, Q
G
, (nC)
GATE-EMITTER VOLTAGE, V
GE
, (VOLTS)
GATE CHARGE VS. VGE
20
0
16
12
8
4
0
200 400 600 1000800
V
CC
= 300V
EMITTER CURRENT, I
E
, (AMPERES)
REVERSE RECOVERY TIME, t
rr
, (ns)
REVERSE RECOVERY CHARACTERISTICS
(TYPICAL)
10
3
10
1
10
2
10
2
10
1
10
3
10
2
10
1
REVERSE RECOVERY CURRENT, I
rr
, (AMPERES)
V
CC
= 300V
V
GE
= ±15V
R
G
= 4.2Ω
T
j
= 25°C
Inductive Load
V
CC
= 200V
I
C
= 150A
10
3
COLLECTOR CURRENT, I
C
, (AMPERES)
SWITCHING LOSS, E
SW( on)
, E
SW( off)
, (mJ/PULSE)
10
1
10
1
10
2
10
0
10
-1
V
CC
= 300V
V
GE
= ±15V
R
G
= 4.2Ω
T
j
= 125°C
Inductive Load
C Snubber at Bus
V
CC
= 300V
V
GE
= ±15V
I
C
= 150A
T
j
= 125°C
Inductive Load
C Snubber at Bus
10
3
SWITCHING LOSS VS.
COLLECTOR CURRENT (TYPICAL)
GATE RESISTANCE, R
G
, (Ω)
SWITCHING LOSS, E
SW( on)
, E
SW( off)
, (mJ/PULSE)
10
1
10
1
10
2
10
0
10
-1
10
3
SWITCHING LOSS VS.
GATE RESISTANCE (TYPICAL)
E
SW(on)
E
SW(off)
E
SW(on)
E
SW(off)
I
rr
t
rr