DISCRETE SEMICONDUCTORS DAWA SlAlleler BZX84LN series Voltage regulator diodes Preliminary specification File under Discrete Semiconductors, SC01 Philips Semiconductors VT 1998 Aug 05 PHILIPSPhilips Semiconductors Preliminary specification meee ee ee ee Voltage regulator diodes BZX84LN series meee ee ee ee FEATURES PINNING Total power dissipation: max. 250 mW PIN DESCRIPTION e Two tolerance series: +2% and +5% { anode e Working voltage range: nom. 5.1 to 75 V (E24 range). 2 not connected 3 cathode APPLICATIONS e General regulation functions, where low noise at low currents is required. 2 1 DESCRIPTION 2 1 Low-power low noise voltage regulator diodes in SMD me SOT23 plastic package. The diodes are available in the 3 normalized E24 +2% (BZX84LN-B) and +5% 3 (BZX84LN-C) tolerance range. The series consists of 29 types with nominal working voltages from 5.1 to 75 V. Top view MAMe#S Fig.1 Simplified outline (SOT23) and symbol. MARKING TYPE NUMBER | MARIING | TyPENUMBER | MARMONG | TYPE NUMBER | MARIUONG |) Type NuMBER | W/OUNG BZX84LN-B5V1 BZX84LN-B22 BZX84LN-C5V1 BZX84LN-C22 BZX84LN-B5V6 BZX84LN-B24 BZX84LN-C5V6 BZX84LN-C24 BZX84LN-B6V2 BZX84LN-B27 BZX84LN-C6V2 BZX84LN-C27 BZX84LN-B6V8 BZX84LN-B30 BZX84LN-C6V8 BZX84LN-C30 BZX84LN-B7V5 BZX84LN-B33 BZX84LN-C7V5 BZX84LN-C33 BZX84LN-B8V2 BZX84LN-B36 BZX84LN-C8V2 BZX84LN-C36 BZX84LN-B9V1 BZX84LN-B39 BZX84LN-C9V1 BZX84LN-C39 BZX84LN-B10 BZX84LN-B43 BZX84LN-C10 BZX84LN-C43 BZX84LN-B11 BZX84LN-B47 BZX84LN-C11 BZX84LN-C47 BZX84LN-B12 BZX84LN-B51 BZX84LN-C12 BZX84LN-C51 BZX84LN-B13 BZX84LN-B56 BZX84LN-C13 BZX84LN-C56 BZX84LN-B15 BZX84LN-B62 BZX84LN-C15 BZX84LN-C62 BZX84LN-B16 BZX84LN-B68 BZX84LN-C16 BZX84LN-C68 BZX84LN-B18 BZX84LN-B75 BZX84LN-C18 BZX84LN-C75 BZX84LN-B20 = = BZX84LN-C20 = = 1998 Aug 05 2Philips Semiconductors Preliminary specification Voltage regulator diodes BZX84LN series LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT IF continuous forward current - 250 mA Izsu non-repetitive peak reverse current | t, = 100 ls; square wave; see Tables 1 and 2 Tamb = 25 C prior to surge Prot total power dissipation Tamb = 25 C; note 1 - 400 mW T stg storage temperature 65 +150 C Tj junction temperature - 150 C Note 1. Device mounted on a printed-circuit board: 11 x 25x 1.6 mm. ELECTRICAL CHARACTERISTICS Total BZX84LN-B and C series Tj = 25 C unless otherwise specified. SYMBOL PARAMETER CONDITIONS MAX. UNIT Ve forward voltage lr = 10 mA; see Fig.2 0.9 Vv I- = 100 mA; see Fig.2 1.4 Vv Ip reverse current BZX84LN-B/C5V1 Va=4V 5 LA BZX84LN-B/C5V6 Va=4V 1 LA BZX84LN-B/C6V2 Va=4V 1 LA BZX84LN-B/C6V8 Va=4V 1 LA BZX84LN-B/C7V5 Va=5V 1 LA BZX84LN-B/C8V2 Va=5V 700 nA BZX84LN-B/C9OV1 Va=6V 500 nA BZX84LN-B/C10 Va=7V 200 nA BZX84LN-B/C11 Va=8V 100 nA BZX84LN-B/C12 Va=8V 100 nA BZX84LN-B/C13 Va=8V 100 nA BZX84LN-B/C15 to 75 Va =0.7V2nom 50 nA 1998 Aug 05 3Preliminary specification Philips Semiconductors BZX84LN series Voltage regulator diodes Go | 08 702 oe 00 9| eee | ose | og'ez ve Go | v8 v8l Gz og2 eez | g'02 | ore | o9'l2 oe g} 88 v9l 0g 002 zle| get | oro | 0961 0g g} 6 vt+l 0g 002 L6L | 8 OL] Ost | OOZL 8 g} 16 vel 0g 002 ZL | Gt | oe9t | oz Qk o'% 66 vibe GI Ogl ogt | gel | ost | oz rl GI GZ 01 v6 OL 00L LyL | vel] Ofel | OZ'SL el GZ SOL v8 OL 00L Let] bt | o2ek | og be ok GZ 80l vl OL 00L OL | vol | og bt | ogo LL Ove OLL v9 OL 00L 901 | +6 | Oz ol | 086 OL Ove Og L gg OL 00L 96 ge | sce | zoe LAG Ov OSl o'r OL 00L Z8 ZL | 98 | 098 ZA8 Ov OLL Ov OL 00L 6L OL | soz | SEZ GAL Oz Giz Ove Or 00L ol v9 | 769 | 99'9 8A9 Oz og2 es og 00L 9'9 8g | ze9 | 809 ZAQ9 Oz Glz Zk og 00L 0'9 2g | iz' | 6s SAS Oz 00 8'0- 09 og2 vg sv | ozs | 00s LAS *XVIN *XVIN dAL *XVIN *XVIN *XVIN | NIA | "XVI | NI 9067 = wey AO=4A ( B14 88s) wug=2) | wiogz=21 | (0) %GF OL | (a) %2F IOL XXX sti OOL = 41 1e (yw) SZ] ZHIN | = $4e yu g =2| (5) #Pa wi og = 4 Nowexca IN3YYND ASHSAaY (4d) Po OWV/AW) 25 JONVILSISSY (A) ZA Wad SALLILLaday-NON dvo 3qola 443509 AWAL WILNaY3410 ADVLIOA DNINHOM pailoads asimayjo ssejun 9. gz =! 29/0 Ol LAGO/E-N1r8XxZq edAl Jed Laqen 1998 Aug 05Preliminary specification Philips Semiconductors BZX84LN series Voltage regulator diodes Z0 ge 2:08 GZ 00 062 | OZ | 0S9Z | OG'eZ GZ Gz'0 Or Lid o9l 00 022 | o'v9 | O69 | O9'99 89 '0 a v9 Ort 00 099 | oes | Oz e9 | O8'09 29 '0 6r OLS OZ 00 009 | oes | O1'ZS | 06'rS 9g v0 eg O'S OLL 00 O'vS | o'er | 00'S | 0O'0S Lg s0 Gg L'Or 06 00 00S | Orr | 06'Zr | OL or lv 9'0 9g A 08 00 097 | OOF | O6'Er | OL er ev Z0 8g v9E GZ 00 Oly | oze | 086e | ose 6e 80 6S O'ee 09 00 ose | ove | O29 | OE'ge ge 60 09 L62 Or SOE oge | ole | OZee | ose ee O'L 99 992 Or 00 o'ze | oee | 090 | or'6z oe O'L eZ vee Or 00 682] Sse | ose | ogee le *XVIN *XVIN dAL *XVIN *XVIN *XVIN | NIN | XVI | NIW 9067 = WPL AO=4A wuze=24 | wiose=21 | (0) %GFIOL | (8) %2F 1OL XXX svi OOL = 41: 3e (Wy) MSZ] ZHIN | = $4e yu zg =2| (25) #Pa wiog = 4 Nayexwa LN3YYND ASYSASY (4d) Po OV/AW) Zs FONVLSISAY (A) 2A Wad SALLILaday-NON dvo aqola 'dd5O9 AWAL WILLNaYs4410 ADVLIOA DNINHOM paijioads asimuaulo ssejun 9, gg = | GLO/E 91 LEO/E-N1V8XZd eGAL Jed = % BIGeL 1998 Aug 05Philips Semiconductors Preliminary specification Voltage regulator diodes BZX84LN series THERMAL CHARACTERISTICS SYMBOL PARAMETER CONDITIONS VALUE UNIT Rih ja thermal resistance from junction to ambient | note 1 315 KAW Note 1. Device mounted on a printed-circuit board: 11 x 25x 1.6 mm. GRAPHICAL DATA MBG781 MBG782 BZX84LN-B/C4V7 to B/C12. Tj = 25 to 150 C. T)=25C. Fig.2 Forward current as a function of forward Fig.3 Temperature coefficient as a function of voltage; typical values. working current; typical values. 1998 Aug 05 6Philips Semiconductors Voltage regulator diodes PACKAGE OUTLINE Preliminary specification BZX84LN series Plastic surface mounted package; 3 leads SOT23 D >] E>r{a] [JN f \ / \ | | \ | ! \ i | \ ! I | \ / L ] | NL | |. Me EVO 3 _L| I | | | | 1 1 1 2 | Ke: el | Lomo [e] detail X 0 4 2mm Lirrriiririitiiiiiiiiidt scale DIMENSIONS (mm are the original dimensions) Ay UNIT A max. bp c D E e ey He Lp Q v w 14 048 | 015 | 3.0 | 14 25 | 0.45 | 0.55 mm) o9 | %1 | o38 | 009 | 28 | 12 | 12% | %% | 24 | ots | 045 | OF | O41 REFERENCES OUTLINE EUROPEAN ISSUE DATE VERSION IEC JEDEC EIAJ PROJECTION SoT23 --} 97-02-28 1998 Aug 05Philips Semiconductors Preliminary specification Voltage regulator diodes BZX84LN series DEFINITIONS Data sheet status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications. Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, itis advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. 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Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Printed in The Netherlands 115104/00/01/pp12 Philips Semiconductors Date of release: 1998 Aug 05 Document order number: 9397 750 04212 pet PHILIPS Lede