SFH 487
GaAIAs-IR-Lumi neszenzdi ode (880 nm)
GaAIAs Infrared Emitter (880 nm)
2001-02-22 1
Wesentliche Merkmale
• GaAlAs-LED mit sehr hohem Wirkungsgrad
• Hohe Zuverlässigkeit
• Hohe Impulsbelastbarkeit
• Gute spektrale Anpassung an
Si-Fotoempfänger
• Gehäusegleich mit SFH 309, SFH 409
Anwendungen
•IIR-Fernsteuerung von Fernseh-, Rundfunk-
und Videogeräten, Lichtdimmern
• Lichtschranken bis 500 kHz
• Münzzähler
• Sensorik
• Diskrete Optokoppler
Typ
Type Bestellnummer
Ordering Code Gehäuse
Package
SFH 487 Q62703-Q1095 3-mm-LED-Gehäuse (T1), klares violettes Epoxy-
Gieβharz, Anschlüsse im 2.54-mm-Raster (1/10’’),
Anodenkennzeic hnung: kürzere r Anschluβ
3 mm LED package (T1), violet-colored transparent epoxy
resin, solder tabs lead spacing 2.54 mm (1/10’’), anode
marking: short lead
SFH 487-2 Q62703-Q2174
SFH 487-3 Q62703-Q2175
Features
•Very highly efficient GaAlAs-LED
•High reliability
•High pulse handling capability
•Good spectral match to silicon photodetectors
•Same package as SFH 309, SFH 409
Applications
•IR remote control for hifi and TV sets, video
tape recorder, dimmers
•Light-reflection switches (max. 500 kHz)
•coin counters
•Sensor technology
•Discrete optocouplers
2001-02-22 2
SFH 487
Grenzwerte (TA = 25 °C)
Maximum Ratings
Bezeichnung
Parameter Symbol
Symbol Wert
Value Einheit
Unit
Betriebs- und Lagertemperatur
Operating and storage temperature range Top; Tstg – 40 …+ 100 °C
Sperrspannung
Reverse voltage VR5V
Durchlaβstrom
Forward current IF100 mA
Stoβstrom, τ ≤ 10 µs
Surge current IFSM 2.5 A
Verlustleistung
Power dissipation Ptot 200 mW
Wärmewiderstand, freie Beinchenlänge
max. 10 mm
Thermal resistance, lead length between
package bottom and PC-board max. 10 mm
RthJA 375 K/W
Kennwerte (TA = 25 °C)
Characteristics
Bezeichnung
Parameter Symbol
Symbol Wert
Value Einheit
Unit
Wellenlänge der Strahlung
Wavelength at peak emission
IF = 100 mA
λpeak 880 nm
Spektrale Bandbreite bei 50% von Imax,
IF = 100 mA
Spectral bandwidth at 50% of Imax
∆λ 80 nm
Abstrahlwinkel
Half angle ϕ± 20 Grad
deg.
Aktive Chipfläche
Active chip area A0.09 mm2
Abmessungen der aktiven Chipfläche
Dimension of the active chip area L×B
L×W0.3 ×0.3 mm
Abstand Chipoberfläche bis Linsenscheitel
Distance chip front to lens top H2.6 mm
SFH 487
2001-02-22 3
Schaltzeiten, Ie von 10% a uf 90% und von 90% auf
10%, bei IF = 100 mA, RL = 50 Ω
Switching tim es, Ie from 10% to 90% and from
90% to 10%, IF = 100 mA, RL = 50 Ω
tr, tf0.6/0.5 µs
Kapazität
Capacitance
VR = 0 V, f = 1 MHz
Co15 pF
Durchlaβspannung
Forward voltage
IF = 100 mA, tp = 20 ms
IF = 1 A, tp = 100 µsVF1.5 (< 1.8)
3.0 (< 3.8) V
Sperrstrom
Reverse current
VR = 5 V
IR0.01 (≤ 1)µA
Gesamtstrahlungsfluβ
Total radiant flux
IF = 100 mA, tp = 20 ms
Φe25 mW
Temperaturkoeffizient von Ie bzw. Φe,
IF = 100 mA
Temperature coefficient of Ie or Φe,
IF = 100 mA
TCI – 0.5 %/K
Temperaturkoeffizient von VF, IF = 100 mA
Temperature coefficient of VF, IF = 100 mA TCV– 2mV/K
Temperaturkoeffizient von λpeak, IF = 100 mA
Temperature coefficient of λpeak, IF = 100 mA TCλ0.25 nm/K
Kennwerte (TA = 25 °C)
Characteristics (cont’d)
Bezeichnung
Parameter Symbol
Symbol Wert
Value Einheit
Unit
2001-02-22 4
SFH 487
Gruppierung der Strahlstärke Ie in Achsrichtung
gemessen bei einem Raumwinkel Ω = 0.01 sr
Grouping of Radiant Intensity Ie in Axial Direction
at a solid angle of Ω = 0.01 sr
Bezeichnung
Parameter Symbol Wert
Value Einheit
Unit
SFH 487 SFH 487-2 SFH 487-3
Strahlstärke
Radiant intensity
IF = 100 mA, tp = 20 ms Ie> 12.5 > 20 31 …125 mW/sr
Strahlstärke
Radiant intensity
IF = 1 A, tp = 100 µsIe typ. 270 270 –mW/sr
SFH 487
2001-02-22 5
Relati ve Sp ectral Emission
Ιrel = f (λ)
Forward Cu rrent, IF = f (VF)
Single pulse, tp = 20 µs
Radi ati on C harac ter ist ics Irel = f (ϕ)
0
750
Ιrel
OHR00877
800 850 900 950 nm 1000
20
40
60
80
%
100
λ
10
OHR00881
F
V
-3
-2
10
-1
10
0
10
1
10
0123456V8
A
Ι
F
OHR01895
02040 60 80 100 1200.40.60.81.0
100
90
80
70
60
50
0
10203040
0
0.2
0.4
0.6
0.8
1.0
ϕ
Radiant Intensity
Single pulse , tp = 20 µs
Permissible Pulse Handling
Capability IF = f (τ), TA = 25 °C,
duty cycle D = parameter
Ιe
Ιe 100 mA = f (IF)
10
OHR00878
Ιe
F
Ι
-3
-2
10
-1
10
0
10
1
10
2
10
0
10 10 110 210 4
mA
e
Ι
(100mA)
3
10
10
Ι
F
OHR00886
1
2
10
3
10
4
10
mA
-5
10 s
=D
F
Ι
T
DC
0.005=
D
p
t
T
t
p
p
t
0.5
0.2
0.1
0.01
0.02
0.05
10
-4
10
-3
10
-2
10
-1
10
0
10
1
10
2
Max. Permissible Forward Current
IF = f (TA)
Forward Current vs. Lead Le ngt h
between th e Package Botto m and
the PC-Boar d IF = f (I), TA = 25 °C
T
OHR00880
0
F
Ι
0 20 40 60 80 100˚C
mA
25
50
75
100
125
OHR00949
F
Ι
00 5 10 15 20 25 mm 30
20
40
60
80
100
mA
120
2001-02-22 6
SFH 487
Maßzeichnung
Package Outlines
Maße werden wi e fo lgt angegeben: mm (inch) / Dimensio ns are s pecified as follow s: m m (inc h).
Published by OSRAM Opto Semiconductors GmbH & Co. OHG
Wernerwerkstrasse 2, D-93049 Regensburg
© All Rights Reserved.
Attention please!
The inform at ion describe s the type of compon ent and shall not be considered as assur ed c haracteristics.
Terms of delivery and rights to change design reserved. Due to technical requirements components may contain
dangerous substances. For information on the types in question please contact our Sales Organization.
Packing
Please use the recyc ling operat ors known t o you. We can also help y ou – get in touch wit h your near est sales offic e.
By agreement we will take packing material back, if it is sorted. You must bear the costs of transport. For packing
material that is returned to us unsorted or which we are not obliged to accept, we shall have to invoice you for any costs
incurred.
Components used in life-support devices or systems must be expressly authorized for such purpose! Critical
components 1 , may only be used in life-support devices or systems 2 with the express written approval of OSRAM OS.
1 A critica l component is a co mponent usedin a l ife-support devi ce or system whose failure can re asonably be expec ted
to cause the failure of that life-support device or system, or to affect its safety or effectiveness of that device or system.
2 Life sup port device s or syst ems ar e int ended (a ) to b e imp lanted in t he hu man body , or ( b) to supp ort a nd/or main tain
and sust ain human life. If th ey fail , it is rea so nable to assume th at the health of the user may be endangered.
6.3 (0.248)
5.9 (0.232)
4.1 (0.161)
3.9 (0.154)
5.2 (0.205)
4.5 (0.177)
Chip position
GEXY6250
Cathode
Anode (SFH 487, SFH 4301)
(SFH 409, SFH 4332)
4.0 (0.157)
3.6 (0.142)
0.4 (0.016)
0.7 (0.028)
0.8 (0.031)
0.4 (0.016)
0.4 (0.016)
Area not flat
1.2 (0.047)
1.8 (0.071)
29 (1.142)
27 (1.063)
ø3.1 (0.122)
ø2.9 (0.114)
(3.5 (0.138))
0.6 (0.024)
0.4 (0.016)
2.54 (0.100)
spacing
