VS-8TQ...GPbF Series, VS-8TQ...G-N3 Series
www.vishay.com Vishay Semiconductors
Revision: 11-Oct-11 1Document Number: 94263
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
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Schottky Rectifier, 8 A
FEATURES
• 175 °C TJ operation
• Low forward voltage drop
• High frequency operation
• High purity, high temperature epoxy
encapsulation for enhanced mechanical
strength and moisture resistance
• Guard ring for enhanced ruggedness and long
term reliability
• Compliant to RoHS Directive 2002/95/EC
• Designed and qualified according to JEDEC-JESD47
• Halogen-free according to IEC 61249-2-21 definition
(-N3 only)
DESCRIPTION
The VS-8TQ...G Schottky rectifier series has been optimized
for low reverse leakage at high temperature. The proprietary
barrier technology allows for reliable operation up to 175 °C
junction temperature. Typical applications are in switching
power supplies, converters, freewheeling diodes, and
reverse battery protection.
PRODUCT SUMMARY
Package TO-220AC
IF(AV) 8 A
VR80 V, 100 V
VF at IF0.58 V
IRM max. 7 mA at 125 °C
TJ max. 175 °C
Diode variation Single die
EAS 7.5 mJ
Anode
13
Cathode
Base
cathode
2
TO-220AC
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL CHARACTERISTICS VALUES UNITS
IF(AV) Rectangular waveform 8A
VRRM 100 V
IFSM tp = 5 μs sine 850 A
VF8 Apk, TJ = 125 °C 0.58 V
TJRange - 55 to 175 °C
VOLTAGE RATINGS
PARAMETER SYMBOL VS-8TQ080GPbF VS-8TQ080G-N3 VS-8TQ100GPbF VS-8TQ100G-N3 UNITS
Maximum DC reverse
voltage VR
80 80 100 100 V
Maximum working
peak reverse voltage VRWM
ABSOLUTE MAXIMUM RATINGS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum average forward current
See fig. 5 IF(AV) 50 % duty cycle at TC = 157 °C, rectangular waveform 8
A
Maximum peak one cycle
non-repetitive surge current
See fig. 7
IFSM
5 µs sine or 3 µs rect. pulse Following any rated load
condition and with rated
VRRM applied
850
10 ms sine or 6 ms rect. pulse 230
Non-repetitive avalanche energy EAS TJ = 25 °C, IAS = 0.50 A, L = 60 mH 7.50 mJ
Repetitive avalanche current IAR Current decaying linearly to zero in 1 μs
Frequency limited by TJ maximum VA = 1.5 x VR typical 0.50 A
VS-8TQ...GPbF Series, VS-8TQ...G-N3 Series
www.vishay.com Vishay Semiconductors
Revision: 11-Oct-11 2Document Number: 94263
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Note
(1) Pulse width < 300 μs, duty cycle < 2 %
ELECTRICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum forward voltage drop
See fig. 1 VFM (1)
8 A TJ = 25 °C 0.72
V
16 A 0.88
8 A TJ = 125 °C 0.58
16 A 0.69
Maximum reverse leakage curent
See fig. 2 IRM (1) TJ = 25 °C VR = Rated VR
0.28 mA
TJ = 125 °C 7
Maximum junction capacitance CTVR = 5 VDC (test signal range 100 kHz to 1 MHz) 25 °C 500 pF
Typical series inductance LSMeasured lead to lead 5 mm from package body 8 nH
Maximum voltage rate of change dV/dt Rated VR10 000 V/µs
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum junction and
storage temperature range TJ, TStg - 55 to 175 °C
Maximum thermal resistance,
junction to case RthJC DC operation
See fig. 4 2.0
°C/W
Typical thermal resistance,
case to heatsink RthCS Mounting surface, smooth and greased 0.50
Approximate weight 2g
0.07 oz.
Mounting torque minimum 6 (5) kgf · cm
(lbf · in)
maximum 12 (10)
Marking device Case style TO-220AC 8TQ080G
8TQ100G
VS-8TQ...GPbF Series, VS-8TQ...G-N3 Series
www.vishay.com Vishay Semiconductors
Revision: 11-Oct-11 3Document Number: 94263
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 1 - Maximum Forward Voltage Drop Characteristics Fig. 2 - Typical Values of Reverse Current vs.
Reverse Voltage
Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage
Fig. 4 - Maximum Thermal Impedance ZthJC Characteristics
1
10
02.20.81.2
VFM - Forward Voltage Drop (V)
IF - Instantaneous Forward Current (A)
100
0.4 1.8
1000
TJ = 175 °C
TJ = 125 °C
TJ = 25 °C
0.2 0.6 1.0 1.4 1.6 2.0
0.1
0.1
1
10
100
0.01
0.001
0
VR - Reverse Voltage (V)
IR - Reverse Current (µA)
20 60 80 10040
0.0001
TJ = 175 °C
TJ = 150 °C
TJ = 50 °C
TJ = 75 °C
TJ = 100 °C
TJ = 125 °C
TJ = 25 °C
1000
0 40 100
100
V
R
- Reverse Voltage (V)
C
T
- Junction Capacitance (pF)
20 60 80
TJ = 25 °C
10 30 50 70 90 110
0.1
1
10
0.0001 0.001 0.01 0.1
t1 - Rectangular Pulse Duration (s)
ZthJC - Thermal Impedance (°C/W)
Single pulse
(thermal resistance)
1
D = 0.75
D = 0.50
D = 0.33
D = 0.25
D = 0.20
VS-8TQ...GPbF Series, VS-8TQ...G-N3 Series
www.vishay.com Vishay Semiconductors
Revision: 11-Oct-11 4Document Number: 94263
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 5 - Maximum Allowable Case Temperature vs.
Average Forward Current
Fig. 6 - Forward Power Loss Characteristics
Fig. 7 - Maximum Non-Repetitive Surge Current
Fig. 8 - Unclamped Inductive Test Circuit
Note
(1) Formula used: TC = TJ - (Pd + PdREV) x RthJC;
Pd = Forward power loss = IF(AV) x VFM at (IF(AV)/D) (see fig. 6);
PdREV = Inverse power loss = VR1 x IR (1 - D); IR at VR1 = 80 % rated VR
140
0
I
F(AV)
- Average Forward Current (A)
Allowable Case Temperature (°C)
150
165
160
180
175
145
155
170
12108642
DC
Square wave (D = 0.50)
80 % rated VR applied
See note (1)
7
0
012
4
Average Power Loss (W)
IF(AV) - Average Forward Current (A)
246810
1
2
3
5
6
DC
D = 0.20
D = 0.25
D = 0.33
D = 0.50
D = 0.75
RMS limit
1000
100 1000
tp - Square Wave Pulse Duration (µs)
IFSM - Non-Repetitive Surge Current (A)
100
10 00010
At any rated load condition
and with rated VRRM applied
following surge
Current
monitor
High-speed
switch
D.U.T.
Rg = 25 Ω
+
Freewheel
diode Vd = 25 V
L
IRFP460
40HFL40S02
VS-8TQ...GPbF Series, VS-8TQ...G-N3 Series
www.vishay.com Vishay Semiconductors
Revision: 11-Oct-11 5Document Number: 94263
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
ORDERING INFORMATION TABLE
ORDERING INFORMATION (Example)
PREFERRED P/N QUANTITY PER T/R MINIMUM ORDER QUANTITY PACKAGING DESCRIPTION
VS-8TQ080GPbF 50 1000 Antistatic plastic tube
VS-8TQ080G-N3 50 1000 Antistatic plastic tube
VS-8TQ100GPbF 50 1000 Antistatic plastic tube
VS-8TQ100G-N3 50 1000 Antistatic plastic tube
LINKS TO RELATED DOCUMENTS
Dimensions www.vishay.com/doc?95221
Part marking information TO-220AC PbF www.vishay.com/doc?95224
TO-220AC -N3 www.vishay.com/doc?95068
SPICE model www.vishay.com/doc?95291
- Current rating (8 = 8 A)
- T = TO-220
- Q = Schottky “Q” series
- Voltage rating (100 = 100 V)
- G = Schottky generation
Device code
62 43 5 7
8 T Q 100 G PbFVS-
1
2
3
4
5
6
7
1-Vishay Semiconductors product
-
PbF = Lead (Pb)-free and RoHS compliant
-N3 = Halogen-free, RoHS compliant, and totally lead (Pb)-free
Environmental digit
Document Number: 95221 For technical questions within your region, please contact one of the following: www.vishay.com
Revision: 07-Mar-11 DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com 1
TO-220AC
Outline Dimensions
Vishay Semiconductors
DIMENSIONS in millimeters and inches
Notes
(1) Dimensioning and tolerancing as per ASME Y14.5M-1994
(2) Lead dimension and finish uncontrolled in L1
(3) Dimension D, D1 and E do not include mold flash. Mold flash shall not exceed 0.127 mm (0.005") per side. These dimensions are measured
at the outermost extremes of the plastic body
(4) Dimension b1, b3 and c1 apply to base metal only
(5) Controlling dimension: inches
(6) Thermal pad contour optional within dimensions E, H1, D2 and E1
(7) Dimension E2 x H1 define a zone where stamping and singulation irregularities are allowed
(8) Outline conforms to JEDEC TO-220, D2 (minimum) where dimensions are derived from the actual package outline
SYMBOL MILLIMETERS INCHES NOTES SYMBOL MILLIMETERS INCHES NOTES
MIN. MAX. MIN. MAX. MIN. MAX. MIN. MAX.
A 4.25 4.65 0.167 0.183 E1 6.86 8.89 0.270 0.350 6
A1 1.14 1.40 0.045 0.055 E2 - 0.76 - 0.030 7
A2 2.56 2.92 0.101 0.115 e 2.41 2.67 0.095 0.105
b 0.69 1.01 0.027 0.040 e1 4.88 5.28 0.192 0.208
b1 0.38 0.97 0.015 0.038 4 H1 6.09 6.48 0.240 0.255 6, 7
b2 1.20 1.73 0.047 0.068 L 13.52 14.02 0.532 0.552
b3 1.14 1.73 0.045 0.068 4 L1 3.32 3.82 0.131 0.150 2
c 0.36 0.61 0.014 0.024 L3 1.78 2.13 0.070 0.084
c1 0.36 0.56 0.014 0.022 4 L4 0.76 1.27 0.030 0.050 2
D 14.85 15.25 0.585 0.600 3 Ø P 3.54 3.73 0.139 0.147
D1 8.38 9.02 0.330 0.355 Q 2.60 3.00 0.102 0.118
D2 11.68 12.88 0.460 0.507 6 90° to 93° 90° to 93°
E 10.11 10.51 0.398 0.414 3, 6
13
2
D
D1
H1
Q
Detail B
C
A
B
L
e1
Lead tip
L4
L3
E
E2
Ø P
0.015 AB
MM
0.014 AB
MM
Seating
plane
c
A2
A1
A
A
A
Lead assignments
Diodes
1 + 2 - Cathode
3 - Anode
Conforms to JEDEC outline TO-220AC
(6)
(6)
(7)
(6)
(7)
View A - A
θ
E1 (6)
D2 (6)
H1
Thermal pad
E
Detail B
D
L1
D
123
CC
2 x b2 2 x b
Legal Disclaimer Notice
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Revision: 02-Oct-12 1Document Number: 91000
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Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as RoHS-Compliant fulfill the
definitions and restrictions defined under Directive 2011/65/EU of The European Parliament and of the Council
of June 8, 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment
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Please note that some Vishay documentation may still make reference to RoHS Directive 2002/95/EC. We confirm that
all the products identified as being compliant to Directive 2002/95/EC conform to Directive 2011/65/EU.
Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as Halogen-Free follow Halogen-Free
requirements as per JEDEC JS709A standards. Please note that some Vishay documentation may still make reference
to the IEC 61249-2-21 definition. We confirm that all the products identified as being compliant to IEC 61249-2-21
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