PC8141XNSZ Series PC8141X NSZ Series AC Input, Low Input Current Type Photocoupler Features Outline Dimensions 4 8 1 4 1 3 6.50.5 7.620.3 4.580.5 Epoxy resin Rank Table Ic (mA) 0.25 to 2.0 0.5 to 1.5 Absolute Maximum Ratings Conditions IF=0.5mA VCE=5V Ta=25C 0.260.1 Unit mA mA mW V V mA mW mW 0.50.1 : 0 to 13 Internal connection diagram (Ta=25C) Parameter Symbol Rating IF 10 Forward current Input *1 Peak forward current IFM 200 Power dissipation P 15 Collector-emitter voltage VCEO 70 Emitter-collector voltage VECO 6 Output IC 50 Collector current PC 150 Collector power dissipation 170 Total power dissipation Ptot Operating temperature -30 to +100 Topr -55 to +125 Tstg Storage temperature *2 Viso Isolation voltage 5 *3 260 Soldering temperature Tsol 3.00.5 2.70.5 3.50.5 1. Programmable controllers 2. Facsimiles 3. Telephones 0.5TYP. 2 Applications Model No. Rank mark PC81410NSZ A or no mark A PC81411NSZ 4.580.5 1 2.540.25 1.20.3 Anode mark 0.60.2 1. Low input current type (IF=0.5mA) 2. High resistance to noise due to high common rejection voltage (CMR:MIN. 10kV/s) 3. AC input type 4. Compact dual-in line package 5. Isolation voltage (Viso:5kVrms) 6. Recognized by UL, file No. E64380 (Unit : mm) 1 4 1 2 3 2 3 4 Anode (Cathode) Cathode (Anode) Emitter Collector C C kVrms C *1 Pulse width<=100s, Duty ratio=0.001 *2 40 to 60%RH, AC for 1 minute, f=60Hz *3 For 10s Notice In the absence of confirmation by device specification sheets, SHARP takes no responsibility for any defects that may occur in equipment using any SHARP devices shown in catalogs, data books, etc. Contact SHARP in order to obtain the latest device specification sheets before using any SHARP device. Internet Internet address for Electronic Components Group http://www.sharp.co.jp/ecg/ PC8141XNSZ Series Transfer characteristics Output Input Electro-optical Characteristics Parameter Symbol Forward voltage VF Terminal capacitance Ct Collector dark current ICEO Collector-emitter breakdown voltage BVCEO Emitter-collector breakdown voltage BVECO IC Collector current Collector-emitter saturation voltage VCE (sat) Isolation resistance RISO Cf Floating capacitance tr Rise time Response time tf Fall time *1 CMR Common mode rejection voltage (Ta=25C) MIN. - - - Conditions IF=10mA V=0, f=1kHz VCE=50V, IF=0 IC=0.1mA, IF=0 IE=10A, IF=0 IF=0.5mA, VCE=5V IF=10mA, IC=1mA DC500V 40 to 60%RH V=0, f=1MHz 5x1010 - - - 1x1011 0.6 4 3 1.0 18 18 Unit V pF nA V V mA V pF s s 10 - - kV/s 70 6 0.25 - VCE=2V, IC=2mA, RL=100 Ta=25C, RL=470, VCM=1.5kV (peak), IF=0mA, VCC=9V, Vnp=100mV TYP. 1.2 30 - - - MAX. 1.4 250 100 - - - - 2.0 0.2 - *1 Refer to Fig.1. Fig.1 Test Circuit for Common Mode Rejection Voltage (dV/dt) VCM RL 1) VCC Vnp VCM Fig.3 Diode Power Dissipation vs. Ambient Temperature Diode power dissipation P (mW) Forward current IF (mA) Fig.2 Forward Current vs. Ambient Temperature 10 5 0 -30 0 Vnp Vcp VCM : High wave VO pulse (Vcp Nearly = dV/dtxCfxRL) RL=470 1) Vcp : Voltage which is generated by displacement current in floating VCC=9V capacitance between primary and secondary side. 25 50 75 Ambient temperature Ta (C) 100 125 15 10 5 0 -30 0 25 50 75 Ambient temperature Ta (C) 100 125 PC8141XNSZ Series Fig.5 Total Power Dissipation vs. Ambient Temperature Total power dissipation Ptot (mW) Collector power dissipation PC (mW) Fig.4 Collector Power Dissipation vs. Ambient Temperature 200 150 100 50 0 -30 0 25 50 75 100 200 170 150 100 50 0 -30 125 0 25 50 75 100 125 Ambient temperature Ta (C) Ambient temperature Ta (C) Fig.6 Peak Forward Current vs. Duty Ratio Fig.7 Forward Current vs. Forward Voltage 100 Pulse width <=100s Ta=25C 1000 Forward current IF (mA) Peak forward current IFM (mA) 2000 500 200 100 50 10 Ta=25C Ta=100C Ta=0C Ta=75C 1 Ta=-25C Ta=50C 20 10 -3 5 10 2 5 10 -2 2 5 10 -1 0.1 2 5 0 1 0.5 1.0 1.5 2.0 Forward voltage VF (V) Duty ratio Fig.8 Current Transfer Ratio vs. Forward Current Fig.9 Collector Current vs. Collector-emitter Voltage 500 40 Ta=25C PC (MAX.) 400 Collector current IC (mA) Current transfer ratio CTR (%) VCE=5V Ta=25C 300 200 100 30 IF=7mA IF=5mA 20 IF=3mA IF=2mA 10 IF=1mA 0 0.1 IF=0.5mA 0 1 Forward current IF (mA) 10 0 2 4 6 8 Collector-emitter voltage VCE (V) 10 PC8141XNSZ Series Fig.10 Relative Current Transfer Ratio vs. Ambient Temperature Fig.11 Collector - emitter Saturation Voltage vs. Ambient Temperature Collector-emitter saturation voltage VCE (sat) (V) Relative current transfer ratio (%) 150 VCE=5V IF=0.5mA 100 50 0 -30 -20 -10 0 10 20 30 40 50 60 70 80 90 100 0.16 IF=10mA IC=1mA 0.14 0.12 0.10 0.08 0.06 0.04 0.02 0 -30 -20 -10 0 10 20 30 40 50 60 70 80 90 100 Ambient temperature Ta (C) Ambient temperature Ta (C) Fig.12 Collector Dark Current vs. Ambient Temperature 1000 VCE=50V VCE=2V IC=2mA Ta=25C 10-6 100 10-7 Response time (s) Collector dark current ICEO (A) 10-5 Fig.13 Response Time vs. Load Resistance 10-8 10-9 tf 10 ts tr 1 10-10 10-11 -30 -20 -10 0 10 20 30 40 50 60 70 80 90 100 0.1 0.1 1 Ambient temperature Ta (C) 10 Load resistance RL (k) Fig.14 Response Time vs. Load Resistance (Saturation) Fig.15 Test Circuit for Response Time 1000 VCC VCC=5V IF=16mA Ta=25C tf RD 100 Response time (s) td Input RL Output Input Output 10% ts td tr 10 td 1 tr 0.1 1 10 Load resistance RL (k) 100 ts tf 90% PC8141XNSZ Series Fig.16 Voltage Gain vs Frequency Fig.17 Collector-emitter Saturation Voltage vs. Forward Current VCE=2V IC=2mA Ta=25C Voltage gain AV (dB) 0 -5 RL=10k 1k -10 100 -15 -20 -25 0.1 1 10 100 1000 Frequency f (kHz) Only one time soldering is recommended within the temperature profile shown below. 230C 200C 180C 25C 10s 30s 1min 5 IC=7mA Ta=25C IC=5mA 4 IC=3mA IC=2mA 3 IC=1mA IC=0.5mA 2 1 0 0 2 4 6 Forward current IF (mA) Fig.18 Reflow Soldering 2min Collector-emitter saturation voltage VCE (sat) (V) 5 1min 8 10