PC8141X NSZ Series
PC8141XNSZ Series
Rank Table
Absolute Maximum Ratings
Outline Dimensions (Unit : mm)
AC Input, Low Input Current
Type Photocoupler
1. Programmable controllers
2. Facsimiles
3. Telephones
Features
Applications
1. Low input current type (IF=0.5mA)
2. High resistance to noise due to high common rejection
voltage (CMR:MIN. 10kV/µs)
3. AC input type
4. Compact dual-in line package
5. Isolation voltage (Viso:5kVrms)
6. Recognized by UL, file No. E64380
Model No. Rank mark Ic (mA) Conditions
PC81410NSZ
PC81411NSZ A or no mark
A0.25 to 2.0
0.5 to 1.5
IF0.5mA
VCE=5V
Ta=25°C
*1 Pulse width<=100µs, Duty ratio=0.001
*2 40 to 60%RH, AC for 1 minute, f=60Hz
*3 For 10s
Parameter Symbol Rating Unit
Forward current
Peak forward current
IF
IFM
±10
±200
mA
mA
mA
Input
Output
V
Power dissipation
Collector-emitter voltage
P 15
Collector power dissipation
Collector current
Total power dissipation
150
70
50
mW
mW
mW
Ptot
IC
PC
VCEO
V
Emitter-collector voltage
6
VECO
Viso kVrms
170
Operating temperature
Topr 55 to +125
30 to +100 °C
°C
Storage temperature
Isolation voltage
Tstg
*2
*3
*1
Soldering temperature
Tsol 260
5°C
(Ta=25°C)
8 1 4 1
4.58±0.5
0.6±0.2
1.2±0.3
2.54±0.25
6.5±0.5
7.62±0.3 4.58±0.5
3.5±0.5
3.0±0.5
2.7±0.5
0.5TYP.
Anode mark
0.5±0.1
0.26±0.1
θθ
θ : 0 to 13°
Epoxy resin
1
2
4
3
1
2
3
4
AnodeAnode (Cathode)
Cathode (Anode)
Emitter
Collector
Internal connection diagram
1
2
4
3
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devices shown in catalogs, data books, etc. Contact SHARP in order to obtain the latest device specification sheets before using any SHARP device.
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PC8141XNSZ Series
Electro-optical Characteristics
Parameter Symbol MIN. TYP. MAX. Unit
Forward voltage
Collector current
Isolation resistance
Floating capacitance
Response time
Common mode rejection voltage
Terminal capacitance
Collector dark current
Emitter-collector breakdown voltage
Collector-emitter breakdown voltage
Collector-emitter saturation voltage
Rise time
Fall time
VF
Ct
ICEO
BVCEO
BVECO
RISO
Cf
IC
VCE (sat)
tr
tf
CMR
Conditions
IF10mA
IF0.5mA, VCE=5V
IF10mA, IC=1mA
V=0, f=1kHz
VCE=50V, IF=0
IC=0.1mA, IF=0
IE=10µA, IF=0
DC500V 40 to 60%RH
V=0, f=1MHz
VCE=2V, IC=2mA, RL=100
Ta=25°C, RL=470Ω, VCM=1.5kV (peak),
IF=0mA, VCC=9V, Vnp=100mV
1.4 V
70
6
0.25
5×1010 1×1011
30
1.2
2.0
250
0.6 1.0
418
318
100
10
V
V
V
0.2
µs
µs
kV/µs
mA
pF
pF
nA
(Ta=25°C)
InputOutputTransfer characteristics
*1 Refer to Fig.1.
*1
Fig.2 Forward Current vs. Ambient
Temperature
Fig.1 Test Circuit for Common Mode Rejection Voltage
VCM
Vcp Vnp
VO
(dV/dt)
1)
RLVnp VCC
VCM (Vcp Nearly = dV/dt×Cf×RL)
1) Vcp : Voltage which is generated by displacement current in floating
capacitance between primary and secondary side.
VCM : High wave
pulse
RL=470
VCC=9V
Forward current IF (mA)
Ambient temperature Ta (°C)
0
10
5
30 0 25 50 75 100 125
Fig.3
Diode Power Dissipation vs. Ambient
Temperature
Diode power dissipation P (mW)
Ambient temperature Ta (°C)
0
15
10
5
30 0 25 50 75 100 125
PC8141XNSZ Series
Fig.6 Peak Forward Current vs. Duty Ratio Fig.7 Forward Current vs. Forward Voltage
Fig.9 Collector Current vs. Collector-emitter
Voltage
Peak forward current IFM (mA)
Duty ratio
10
1000
100
102
103101
22 2555 5 1
2000
200
20
500
50
Pulse width <=100µs
Ta=25°C
Forward current IF (mA)
0.1
1
10
100
0 0.5 1.0 1.5 2.0
Forward voltage VF (V)
Ta=25°C
Ta=75°C
Ta=100°C
Ta=50°C
Ta=0°C
Ta=−25°C
Collector current IC (mA)
Collector-emitter voltage VCE (V)
0
40
0246810
Ta=25°C
30
20
10
PC (MAX.)
IF=7mA
IF=5mA
IF=3mA
IF=2mA
IF=1mA IF=0.5mA
Fig.8 Current Transfer Ratio vs. Forward
Current
Current transfer ratio CTR (%)
Forward current IF (mA)
0.1 1 10
0
500
400
300
200
100
VCE=5V
Ta=25°C
Fig.5
Total Power Dissipation vs. Ambient
Temperature
Total power dissipation Ptot (mW)
Ambient temperature Ta (°C)
0
200
150
170
100
50
30 0 25 50 75 100 125
Fig.4 Collector Power Dissipation vs.
Ambient Temperature
Collector power dissipation PC (mW)
Ambient temperature Ta (°C)
0
200
150
100
50
30 0 25 50 75 100 125
PC8141XNSZ Series
Response time (µs)
0.1
1000
1 10 100
Load resistance RL (k)
VCC=5V
IF=16mA
Ta=25°Ctf
td
ts
100
10
1
tr
Fig.10 Relative Current Transfer Ratio vs.
Ambient Temperature
Relative current transfer ratio (%)
Ambient temperature Ta (°C)
30 10090807060504030201001020
VCE=5V
IF=0.5mA
0
150
100
50
Fig.13 Response Time vs. Load Resistance
Response time (µs)
0.1
1000
0.1 1 10
Load resistance RL (k)
VCE=2V
IC=2mA
Ta=25°C
tf
tr
td
ts
100
10
1
Fig.12 Collector Dark Current vs. Ambient
Temperature
Ambient temperature Ta (°C)
30 10090807060504030201001020
VCE=50V
1011
105
106
107
108
109
1010
Collector dark current ICEO (A)
Fig.11
Collector - emitter Saturation Voltage
vs. Ambient Temperature
Collector-emitter saturation voltage VCE (sat) (V)
Ambient temperature Ta (°C)
0
0.16
0.14
0.12
0.10
0.08
0.06
0.04
0.02
IF=10mA
IC=1mA
30 10090807060504030201001020
Fig.14
Response Time vs. Load Resistance
(Saturation)
Fig.15 Test Circuit for Response Time
10%
Input
Output
Input Output
90%
ts
td
VCC
RDRL
tf
tr
PC8141XNSZ Series
Fig.18 Reflow Soldering
25°C
2min
230°C
200°C
180°C
1min
30s
1min
10s
Only one time soldering is recommended within the temperature
profile shown below.
Fig.16
Voltage Gain vs Frequency
Voltage gain AV (dB)
25
5
0.1 1 10 100 1000
Frequency f (kHz)
VCE=2V
IC=2mA
Ta=25°C
0
5
10
15
20
RL=10k
1k
100
Fig.17 Collector-emitter Saturation Voltage
vs. Forward Current
Collector-emitter saturation voltage VCE (sat) (V)
Forward current IF (mA)
0
5
0246810
Ta=25°C
4
3
2
1
IC=7mA
IC=5mA
IC=3mA
IC=2mA
IC=1mA
IC=0.5mA