To all our customers Regarding the change of names mentioned in the document, such as Mitsubishi Electric and Mitsubishi XX, to Renesas Technology Corp. The semiconductor operations of Hitachi and Mitsubishi Electric were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog and discrete devices, and memory chips other than DRAMs (flash memory, SRAMs etc.) Accordingly, although Mitsubishi Electric, Mitsubishi Electric Corporation, Mitsubishi Semiconductors, and other Mitsubishi brand names are mentioned in the document, these names have in fact all been changed to Renesas Technology Corp. Thank you for your understanding. Except for our corporate trademark, logo and corporate statement, no changes whatsoever have been made to the contents of the document, and these changes do not constitute any alteration to the contents of the document itself. Note : Mitsubishi Electric will continue the business operations of high frequency & optical devices and power devices. Renesas Technology Corp. Customer Support Dept. April 1, 2003 MITSUBISHI Nch POWER MOSFET FS50KMJ-2 HIGH-SPEED SWITCHING USE FS50KMJ-2 OUTLINE DRAWING Dimensions in mm 3 0.3 6.5 0.3 2.8 0.2 f 3.2 0.2 3.6 0.3 14 0.5 15 0.3 10 0.3 1.1 0.2 1.1 0.2 E 0.75 0.15 w 2.6 0.2 1 2 3 4V DRIVE VDSS ................................................................................ 100V rDS (ON) (MAX) .............................................................. 48m ID ......................................................................................... 50A Integrated Fast Recovery Diode (TYP.) ............. 90ns Viso ................................................................................ 2000V 0.75 0.15 2.54 0.25 4.5 0.2 2.54 0.25 q GATE w DRAIN e SOURCE q e TO-220FN APPLICATION Motor control, Lamp control, Solenoid control DC-DC converter, etc. MAXIMUM RATINGS Symbol (Tc = 25C) Parameter Conditions VDSS VGSS Drain-source voltage Gate-source voltage ID IDM Drain current Drain current (Pulsed) IDA Avalanche drain current (Pulsed) IS ISM Source current Source current (Pulsed) PD T ch Maximum power dissipation Channel temperature T stg Viso Storage temperature Isolation voltage AC for 1minute, Terminal to case Weight Typical value -- VGS = 0V VDS = 0V L = 50H Ratings Unit 100 20 V V 50 200 A A 50 A 50 200 A A 30 -55 ~ +150 W C -55 ~ +150 2000 C V 2.0 g Feb.1999 MITSUBISHI Nch POWER MOSFET FS50KMJ-2 HIGH-SPEED SWITCHING USE ELECTRICAL CHARACTERISTICS (Tch = 25C) Symbol Parameter V (BR) DSS IGSS Drain-source breakdown voltage Gate-source leakage current IDSS VGS (th) Drain-source leakage current Gate-source threshold voltage rDS (ON) Drain-source on-state resistance rDS (ON) VDS (ON) Drain-source on-state resistance Drain-source on-state voltage y fs Ciss Forward transfer admittance Input capacitance Coss Crss Output capacitance Reverse transfer capacitance td (on) tr Turn-on delay time Rise time td (off) Turn-off delay time tf VSD Fall time Source-drain voltage Rth (ch-c) trr Thermal resistance Reverse recovery time Limits Test conditions ID = 1mA, VGS = 0V VGS = 20V, VDS = 0V VDS = 100V, V GS = 0V ID = 1mA, VDS = 10V ID = 25A, VGS = 10V ID = 25A, VGS = 4V ID = 25A, VGS = 10V ID = 25A, VDS = 10V VDS = 10V, VGS = 0V, f = 1MHz VDD = 50V, I D = 25A, VGS = 10V, RGEN = RGS = 50 IS = 25A, VGS = 0V Channel to case IS = 50A, dis/dt = -100A/s Unit Min. Typ. Max. 100 -- -- -- -- 0.1 V A -- 1.0 -- 1.5 0.1 2.0 mA V -- 37 48 m -- -- 40 0.93 52 1.20 m V -- -- 40 3000 -- -- S pF -- -- 410 210 -- -- pF pF -- -- 22 65 -- -- ns ns -- 270 -- ns -- -- 160 1.0 -- 1.5 ns V -- -- -- 90 4.17 -- C/W ns PERFORMANCE CURVES DRAIN CURRENT ID (A) 40 30 20 10 0 0 100 DRAIN CURRENT ID (A) MAXIMUM SAFE OPERATING AREA 3 2 50 100 150 200 102 7 5 3 2 tw = 10ms 100ms 101 7 5 3 2 100 7 5 3 1ms 10ms TC = 25C Single Pulse 100ms DC 3 5 7 100 2 3 5 7 101 2 3 5 7 102 2 3 CASE TEMPERATURE TC (C) DRAIN-SOURCE VOLTAGE VDS (V) OUTPUT CHARACTERISTICS (TYPICAL) OUTPUT CHARACTERISTICS (TYPICAL) VGS = 10V 4V 80 60 40 3V 20 VGS = 10V 50 TC = 25C Pulse Test 5V DRAIN CURRENT ID (A) POWER DISSIPATION PD (W) POWER DISSIPATION DERATING CURVE 50 5V 3.5V TC = 25C Pulse Test 40 3V 30 20 2.5V 10 PD = 30W PD = 30W 0 0 2 4 6 8 10 DRAIN-SOURCE VOLTAGE VDS (V) 0 0 1 2 3 4 5 DRAIN-SOURCE VOLTAGE VDS (V) Feb.1999 MITSUBISHI Nch POWER MOSFET FS50KMJ-2 HIGH-SPEED SWITCHING USE ON-STATE VOLTAGE VS. GATE-SOURCE VOLTAGE (TYPICAL) 4 3 ID = 80A 2 50A 1 20A 0 0 2 4 6 TC = 25C VDS = 10V Pulse Test 20 20 3 5 7 100 2 3 5 7 101 2 3 5 7 102 2 3 102 VDS = 10V 7 Pulse Test 5 4 3 TC = 25C 75C 125C 2 101 7 5 4 3 2 0 2 4 6 8 100 0 10 10 2 3 4 5 7 101 2 3 4 5 7 102 GATE-SOURCE VOLTAGE VGS (V) DRAIN CURRENT ID (A) CAPACITANCE VS. DRAIN-SOURCE VOLTAGE (TYPICAL) SWITCHING CHARACTERISTICS (TYPICAL) Tch = 25C 7 f = 1MHZ 5 3 2 Ciss Coss Crss SWITCHING TIME (ns) 104 VGS = 0V CAPACITANCE Ciss, Coss, Crss (pF) 10V FORWARD TRANSFER ADMITTANCE VS.DRAIN CURRENT (TYPICAL) 40 102 7 5 3 2 VGS = 4V 40 TRANSFER CHARACTERISTICS (TYPICAL) 60 103 7 5 3 2 60 DRAIN CURRENT ID (A) 80 2 80 0 10 FORWARD TRANSFER ADMITTANCE yfs (S) DRAIN CURRENT ID (A) 8 TC = 25C Pulse Test GATE-SOURCE VOLTAGE VGS (V) 100 0 100 TC = 25C Pulse Test DRAIN-SOURCE ON-STATE RESISTANCE rDS (ON) (m) DRAIN-SOURCE ON-STATE VOLTAGE VDS (ON) (V) 5 ON-STATE RESISTANCE VS. DRAIN CURRENT (TYPICAL) 103 7 5 4 3 2 tf 102 7 5 4 3 2 3 5 7100 2 3 5 7 101 2 3 5 7 102 2 3 DRAIN-SOURCE VOLTAGE VDS (V) td(off) Tch = 25C VDD = 50V VGS = 10V RGEN = RGS = 50 101 100 tr td(on) 2 3 4 5 7 101 2 3 4 5 7 102 DRAIN CURRENT ID (A) Feb.1999 MITSUBISHI Nch POWER MOSFET FS50KMJ-2 HIGH-SPEED SWITCHING USE 10 SOURCE CURRENT IS (A) 6 4 VDS = 20V 40V 80V 2 0 20 40 60 80 40 TC = 125C 75C 25C 20 0 0.4 0.8 1.2 1.6 2.0 SOURCE-DRAIN VOLTAGE VSD (V) ON-STATE RESISTANCE VS. CHANNEL TEMPERATURE (TYPICAL) THRESHOLD VOLTAGE VS. CHANNEL TEMPERATURE (TYPICAL) 4.0 2 100 7 5 4 3 2 -50 0 50 100 BREAKDOWN VOLTAGE VS. CHANNEL TEMPERATURE (TYPICAL) 1.4 VGS = 0V ID = 1mA 1.2 1.0 0.8 0.6 -50 0 50 100 150 CHANNEL TEMPERATURE Tch (C) VDS = 10V ID = 1mA 3.2 2.4 1.6 0.8 0 150 CHANNEL TEMPERATURE Tch (C) 0.4 60 GATE CHARGE Qg (nC) 101 7 VGS = 10V ID = 1/2ID 5 Pulse Test 4 3 10-1 VGS = 0V Pulse Test 80 0 100 GATE-SOURCE THRESHOLD VOLTAGE VGS (th) (V) DRAIN-SOURCE ON-STATE RESISTANCE rDS (ON) (25C) DRAIN-SOURCE BREAKDOWN VOLTAGE V (BR) DSS (25C) DRAIN-SOURCE ON-STATE RESISTANCE rDS (ON) (tC) 100 Tch = 25C ID = 50A 8 0 DRAIN-SOURCE BREAKDOWN VOLTAGE V (BR) DSS (tC) SOURCE-DRAIN DIODE FORWARD CHARACTERISTICS (TYPICAL) -50 0 50 100 150 CHANNEL TEMPERATURE Tch (C) TRANSIENT THERMAL IMPEDANCE Zth (ch - c) (C/ W) GATE-SOURCE VOLTAGE VGS (V) GATE-SOURCE VOLTAGE VS.GATE CHARGE (TYPICAL) TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS 102 7 5 3 2 101 7 D = 1.0 5 3 0.5 2 100 0.2 7 PDM 5 0.1 3 tw 2 0.05 T 0.02 10-1 7 0.01 D= tw 5 T Single Pulse 3 2 10-2 -4 10 2 3 5710-3 2 3 5710-22 3 5710-12 3 57100 2 3 57101 2 3 57102 PULSE WIDTH tw (s) Feb.1999