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DATA SH EET
Product data sheet 2003 Feb 20
DISCRETE SEMICONDUCTORS
PBSS4240DPN
40 V low VCEsat NPN/PNP
transistor
db
ook, halfpage
M3D302
2003 Feb 20 2
NXP Semiconductors Product data sheet
40 V low VCEsat NPN/PNP transistor PBSS4240DPN
FEATURES
•Low collector-emitter saturation volt age VCEsat
•High collector current capability IC and ICM
•High collector current gain hFE at high IC
•High efficiency lead ing to reduced heat generation
•Reduced printed-circuit board area requirements .
APPLICATIONS
•Power management:
– Complementary MOSFET dr ive r
– Dual supply line switching.
•Peripheral driver:
– Half and full bridge motor drivers
– Multi-phase stepper motor driver.
DESCRIPTION
NPN/PNP low VCEsat transistor pair in a SOT457 (SC-74)
plastic pack ag e.
MARKING
TYPE NUMBER MARKING CODE
PBSS4240DPN M3
PINNING
PIN DESCRIPTION
1, 4 emitter TR1; TR2
2, 5 base TR1; TR2
6, 3 collector TR1; TR2
handbook, halfpage
MAM445
132
TR1 TR2
64
5
Top view
123
654
Fig.1 Simplified outline SOT457 (SC-74) and
symbol.
QUICK REFERENCE DATA
SYMBOL PARAMETER MAX. UNIT
NPN PNP
VCEO emitter-collector
voltage 40 −40 V
ICcollector current (DC) 1.35 −1.1 A
ICRP repetitive peak
collector cu rrent 2−2 A
ICM peak collector current 3−3 A
RCEsat equivalent
on-resistance 200 260 mΩ
2003 Feb 20 3
NXP Semiconductors Pr oduct data shee t
40 V low VCEsat NPN/PNP transistor PBSS4240DPN
LIMITING VALUES
In accordance with th e Absolute Maximum Ratin g S ystem (IEC 60134).
Notes
1. Operated under pulsed conditions: duty cycle δ ≤ 20%; pulse width tp ≤ 10 ms; mounting pad for collector standard
footprint.
2. Device mounted on a pr inted-circuit board; single-sided copper; tinplate d; mounting pad for collector 1 cm2.
3. Device mounted on a pr inted-circuit board; single-sided copper; tinplated; stan dard footprint.
THERMAL CHARACTE RISTICS
Notes
1. Device mounted on a pr inted-circuit board, single-sided copper, tinplate d, mounting pad for collector 1 cm2.
2. Operated under pulsed conditions: pulse width tp ≤ 10 ms; duty cycle δ ≤ 0.20; mounting pad for collector standard
footprint.
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
Per transistor unless otherwise specified; for the PNP transist or with negative polarity
VCBO collector-base volta ge open emitter −40 V
VCEO collector-emitter voltage open base −40 V
VEBO emitter-base voltage open collector −5 V
ICcollector current (DC) −
NPN −1.35 A
PNP − −1.1 A
ICRP repetitive peak colle ctor current note 1 −2 A
ICM peak collector current single peak −3 A
IBbase current (DC) −300 mA
IBM peak base current −1 A
Ptot total power dissipation Tamb ≤ 25 °C; note 2 −370 mW
Tamb ≤ 25 °C; note 3 −310 mW
Tamb ≤ 25 °C; note 1 −1.1 W
Tstg storage temperature −65 +150 °C
Tjjunction temperature −150 °C
Tamb operating ambient temperature −65 +150 °C
Per device
Ptot total power dissipation Tamb ≤ 25 °C; note 2 −600 mW
SYMBOL PARAMETER CONDITIONS VALUE UNIT
Per transistor
Rth j-a thermal resistance from junction to
ambient in free air; note 1 340 K/W
in free air; note 2 110 K/W
2003 Feb 20 4
NXP Semiconductors Pr oduct data shee t
40 V low VCEsat NPN/PNP transistor PBSS4240DPN
CHARACTERISTICS
Tamb = 25 °C unless otherwise specified.
Note
1. Pulse test: tp ≤ 300 μs; δ ≤ 0.02.
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
Per transistor unless otherwise specified; for the PNP transist or with negative polarity
ICBO collector-base cut-off current VCB = 40 V; IE = 0 −−100 nA
VCB = 40 V; IE = 0; Tj = 150 °C−−50 μA
ICEO collector-emitter cut-off current VCE = 30 V; IB = 0 −−100 nA
IEBO emitter-base cu t-off current VEB = 5 V; IC = 0 −−100 nA
hFE DC current gain VCE = 5 V; IC = 1 mA 300 − −
fTtransition frequen c y IC = 50 mA; VCE = 10 V;
f = 100 MHz 150 −−MHz
Cccollector capacitance VCB = 10 V; IE = Ie = 0;
f = 1 MHz −−12 pF
TR1 (NPN)
hFE DC current gain VCE = 5 V; IC = 500 mA 300 −900
VCE = 5 V; IC = 1 A 200 − −
VCE = 5 V; IC = 2 A; note 1 75 − −
VCEsat collector-emitter saturation voltage IC = 100 mA; IB = 1 mA −60 75 mV
IC = 500 mA; IB = 50 mA −80 100 mV
IC = 1 A; IB = 100 mA −150 200 mV
IC = 2 A; IB = 200 mA; note 1 −300 400 mV
VBEsat base-emitt er saturation voltage IC = 1 A; IB = 100 mA −−1.2 V
VBEon base-emitter turn-on voltage VCE = 5 V; IC = 1 A −−1.1 V
RCEsat equivalent on-resistance IC = 1 A; IB = 100 mA −−200 mΩ
TR2 (PNP)
hFE DC current gain VCE = −5 V; IC = −100 mA 300 −800
VCE = −5 V; IC = −500 mA 250 − −
VCE = −5 V; IC = −1 A 160 − −
VCE = −5 V; IC = −2 A; note 1 50 − −
VCEsat saturation voltage IC = −100 mA; IB = −1 mA − −90 −120 mV
IC = −500 mA; IB = −50 mA − −100 −145 mV
IC = −1 A; IB = −100 mA − −180 −260 mV
IC = −2 A; IB = −200 mA; note 1 − −400 −530 mV
VBEsat saturation voltage IC = −1 A; IB = −50 mA −−−1.1 V
VBEon base-emitter turn-on voltage VCE = −5 V; IC = −1 A −−−1 V
RCEsat equivalent on-resistance IC = −1 A; IB = −100 mA; note 1 −−260 mΩ
2003 Feb 20 5
NXP Semiconductors Pr oduct data shee t
40 V low VCEsat NPN/PNP transistor PBSS4240DPN
handbook, halfpage
0
800
200
400
600
MHC471
10
−1
1IC (mA)
hFE
10 10
2
10
3
10
4
(1)
(2)
(3)
Fig.2 DC current gain as a fu nction of collector
current; ty pical values.
TR1 (NPN); VCE = 5 V.
(1) Tamb = 150 °C.
(2) Tamb = 25 °C.
(3) Tamb = −55 °C.
handbook, halfpage MHC472
0
1.2
0.4
0.8
10
−1
110 IC (mA)
VBE
(V)
10
2
10
3
10
4
(1)
(3)
(2)
Fig.3 Base-emitter voltage as a function of
collector current; typical values.
TR1 (NPN); VCE = 5 V.
(1) Tamb = −55 °C.
(2) Tamb = 25 °C.
(3) Tamb = 150 °C.
handbook, halfpage
10
−1
11010
2
10
3
10
4
10
10
2
10
3MHC473
IC (mA)
VCEsat
(mV)
(1)
(3)
(2)
Fig.4 Collector-emitter saturation voltage as a
function of collector current; typical values.
TR1 (NPN); IC/IB = 20.
(1) Tamb = 150 °C.
(2) Tamb = 25 °C.
(3) Tamb = −55 °C.
handbook, halfpage
0.2
1.2
0.4
0.6
0.8
1
MHC474
10−1110 IC (mA)
VBEsat
(V)
103
102104
(1)
(2)
(3)
Fig.5 Base-emitter saturation v oltage as a
function of collector current; typical values.
TR1 (NPN); IC/IB = 20.
(1) Tamb = −55 °C.
(2) Tamb = 25 °C.
(3) Tamb = 150 °C.
2003 Feb 20 6
NXP Semiconductors Pr oduct data shee t
40 V low VCEsat NPN/PNP transistor PBSS4240DPN
handbook, halfpage
02
2
0
0.4
0.8
1.2
1.6
0.4 VCE (V)
IC
(A)
0.8 1.2 1.6
MHC475
(7)
(10)
(8)
(6)
(5)
(4)
(9)
(1)
(2)
(3)
Fig.6 Collector current as a function of
collector-emitter voltage; typical values.
(1) IB = 30 mA.
(2) IB = 27 mA.
(3) IB = 24 mA.
(4) IB = 21 mA.
(5) IB = 18 mA.
(6) IB = 15 mA.
(7) IB = 12 mA.
(8) IB = 9 mA.
(9) IB = 6 mA.
(10) IB = 3 mA.
TR1 (NPN); Tamb = 25 °C.
handbook, halfpage MHC476
10
3
10
2
1
10
−1
10
10
−1
1
RCEsat
(Ω)
IC (mA)
10 10
2
10
3
10
4
(3)
(1) (2)
Fig.7 Collector-emitter equivalent on-resistance
as a function of collector current; typical
values.
TR1 (NPN); IC/IB = 20.
(1) Tamb = 150 °C.
(2) Tamb = 25 °C.
(3) Tamb = −55 °C.
2003 Feb 20 7
NXP Semiconductors Pr oduct data shee t
40 V low VCEsat NPN/PNP transistor PBSS4240DPN
handbook, halfpage
0
1000
200
400
600
800
MHC464
−10
−1
−1−10 IC (mA)
hFE
−10
2
−10
3
−10
4
(3)
(2)
(1)
Fig.8 DC current gain as a fu nction of collector
current; ty pical values.
TR2 (PNP); VCE = −5 V.
(1) Tamb = 150 °C.
(2) Tamb = 25 °C.
(3) Tamb = −55 °C.
handbook, halfpage MHC465
0
−1.2
−0.4
−0.8
−10
−1
−1−10 IC (mA)
VBE
(V)
−10
2
−10
3
−10
4
(1)
(3)
(2)
Fig.9 Base-emitter voltage as a function of
collector current; typical values.
TR2 (PNP); VCE = −5 V.
(1) Tamb = −55 °C.
(2) Tamb = 25 °C.
(3) Tamb = 150 °C.
handbook, halfpage
MHC466
−10
−103
−102
−10−1−1−10 IC (mA)
VCEsat
(mV)
−102−103−104
−1
(1)
(2)
(3)
Fig.10 Collector-emitter saturation voltag e as a
function of collector current; typical values.
TR2 (PNP); IC/IB = 20.
(1) Tamb = 150 °C.
(2) Tamb = 25 °C.
(3) Tamb = −55 °C.
handbook, halfpage
−0.2
−1.2
−0.4
−0.6
−0.8
−1
MHC467
−10−1−1−10 IC (mA)
VBEsat
(V)
−103
−102−104
(1)
(2)
(3)
Fig.11 Base-emitter saturation voltage as a
function of collector current; typical values.
TR2 (PNP); IC/IB = 20.
(1) Tamb = −55 °C.
(2) Tamb = 25 °C.
(3) Tamb = 150 °C.
2003 Feb 20 8
NXP Semiconductors Pr oduct data shee t
40 V low VCEsat NPN/PNP transistor PBSS4240DPN
handbook, halfpage
0
(1)
(2)(3)
(4)
(6)
(8)
IC
(A)
VCE (V)
−1.2
−0.8
−0.4
0−0.4 −2
−0.8 −1.2 −1.4
MHC468
(9)
(10)
(7)
(5)
Fig.12 Collector current as a function of
collector-emitter voltage; typical values.
(1) IB = −7 mA.
(2) IB = −6.3 mA.
(3) IB = −5.6 mA.
(4) IB = −4.9 mA.
(5) IB = −4.2 mA.
(6) IB = −3.5 mA.
(7) IB = −2.8 mA.
(8) IB = −2.1 mA.
(9) IB = −1.4 mA.
(10) IB = −0.7 mA.
TR2 (PNP); Tamb = 25 °C.
handbook, halfpage
0−2
−2.4
−2
0
−0.4
−0.8
−1.2
−1.6
−0.4 VCE (V)
IC
(A)
−0.8 −1.2 −1.6
MHC469
(9)
(7)
(10)
(8)
(1)
(2)
(3)
(4)
(5)
(6)
Fig.13 Collector current as a function of
collector-emitter voltage; typical values.
(1) IB = −50 mA.
(2) IB = −45 mA.
(3) IB = −40 mA.
(4) IB = −35 mA.
(5) IB = −30 mA.
(6) IB = −25 mA.
(7) IB = −20 mA.
(8) IB = −15 mA.
(9) IB = −10 mA.
(10) IB = −5 mA.
TR2 (PNP); Tamb = 25 °C.
2003 Feb 20 9
NXP Semiconductors Pr oduct data shee t
40 V low VCEsat NPN/PNP transistor PBSS4240DPN
handbook, halfpage
MHC470
103
102
1
10−1
10
−10−1−1
RCEsat
(Ω)
IC (mA)
−10 −102−103−104
(2)
(3)
(1)
Fig.14 Collector-emitter equiv alent on-resistance
as a function of collector current; typical
values.
TR2 (PNP); IC/IB = 20.
(1) Tamb = 150 °C.
(2) Tamb = 25 °C.
(3) Tamb = −55 °C.
2003 Feb 20 10
NXP Semiconductors Pr oduct data shee t
40 V low VCEsat NPN/PNP transistor PBSS4240DPN
PACKAGE OUTLINE
REFERENCES
OUTLINE
VERSION EUROPEAN
PROJECTION ISSUE DATE
IEC JEDEC EIAJ
SOT457 SC-74
wBM
bp
D
e
pin 1
index A
A1
Lp
Q
detail X
HE
E
vMA
AB
y
0 1 2 mm
scale
c
X
132
4
56
Plastic surface mounted package; 6 leads SOT45
7
UNIT A1bpcDEHELpQywv
mm 0.1
0.013 0.40
0.25 3.1
2.7
0.26
0.10 1.7
1.3
e
0.95 3.0
2.5 0.2 0.10.2
DIMENSIONS (mm are the original dimensions)
0.6
0.2 0.33
0.23
A
1.1
0.9
97-02-28
01-05-04
2003 Feb 20 11
NXP Semiconductors Pr oduct data shee t
40 V low VCEsat NPN/PNP transistor PBSS4240DPN
DATA SHEET STATUS
Notes
1. Please consult the most recently issued document befor e initiating or completing a design.
2. The product s ta tus of device(s ) described in this do cument may have changed since this do cument was publishe d
and may differ in case of multiple devices. The latest product status information is available on th e Internet at
URL http://www.nxp.com.
DOCUMENT
STATUS(1) PRODUCT
STATUS(2) DEFINITION
Objective data sheet Development This document contains data from the objective specification for pro duct
development.
Preliminary data sheet Qualification This document contains data from the preliminary specification.
Product data sheet Production T his document contains the product specification.
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General ⎯ Information in this document is believed to be
accurate and reliable . H ow ev er, NXP Semiconductors
does not give any representations or warranties,
expressed or implied, as to the accuracy or completeness
of such information and shall have no liability for the
consequenc es of use of such information.
Right to make changes ⎯ NXP Semiconductors
reserves the right to make changes to information
published in this doc ument, including without limitation
specifications and product descriptions, at any time and
without notice. This document supersedes and replaces all
information supplied prior to the publication hereof.
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Applications ⎯ Applications that are described herein for
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NXP Semiconductors makes no representation or
warranty that such applications will be suitable for the
specified use witho ut fu rth e r testing or modification .
Limiting values ⎯ Stress above one or more limiting
values (as defined in the Absolute Maximum Ratings
System of IEC 60134) may cause permanent damage to
the device. Limiting values a re s t ress ratings only and
operation of the device at these or an y other conditions
above those given in the Characteristics sections of this
document is not implied. Exposure to limiting values for
extended periods may affect device reliability.
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Quick refer ence data ⎯ The Quick reference data is an
extract of th e product data given in the Limiting values an d
Characteristics sections of this docu ment, and as such is
not complete, exhaus tive or legally binding.
NXP Semiconductors
Contact information
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© NXP B.V. 2009
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.
The information pr e sent ed in this document d oes not form part o f an y quotation or cont ra ct, is b elieve d t o b e a ccur ate a nd re li a ble and may be chan ged
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under patent- or other industrial or intellectual property rights.
Customer notification
This data sheet was changed to reflect the new company name NXP Semiconductors. No changes were
made to the content, except for the legal definitions and disclaimers.
Printed in The Netherlands 613514/01/pp12 Date of release: 2003 Feb 20 Document order number: 9397 750 10783
