7MBR35UA120 - Fuji Electric

VCES

VGES

IC

ICP

-IC

-IC pulse

PC

VCES

VGES

IC

ICP

PC

VRRM

IO

IFSM

I2t

Tj

Tstg

Viso

Operating junction temperature

Storage temperature

Isolation between terminal and copper base *2

voltage between thermistor and others *3

Mounting screw torque

7MBR35UA120 IGBT Modules

IGBT MODULE (U series)

1200V / 35A / PIM

Features

· Low VCE(sat)

· Compact Package

· P.C. Board Mount Module

· Converter Diode Bridge Dynamic Brake Circuit

Applications

· Inverter for Motoe Drive

· AC and DC Servo Drive Amplifier

· Uninterruptible Power Supply

Maximum ratings and characteristics

Absolute maximum ratings (Tc=25°C unless otherwise specified)

Item Symbol Condition Rating Unit

Collector-Emitter voltage

Gate-Emitter voltage

Collector current

Collector power disspation

Collector-Emitter voltage

Gate-Emitter voltage

Collector current

Collector power disspation

Repetitive peak reverse voltage

Average output current

Surge current (Non-Repetitive)

I2t (Non-Repetitive)

Converter Brake Inverter

Continuous

1ms

1 device

Continuous

1ms

1 device

50Hz/60Hz sine wave

Tj=150°C, 10ms

half sine wave

AC : 1 minute

1200

±20

35

25

70

50

35

70

160

1200

±20

25

15

50

30

115

1200

1600

35

260

338

+150

-40 to +125

AC 2500

3.5 *1

V

A

W

V

A

W

V

A

A2s

°C

V

N·m

*1 Recommendable value : 2.5 to 3.5 N·m (M5)

*2 All terminals should be connected together when isolation test will be done.

*3 Two thermistor terminals should be connected together, each other terminals should be

connected together and shorted to base plate when isolation test will be done.

Tc=25°C

Tc=80°C

Tc=25°C

Tc=80°C

Tc=25°C

Tc=80°C

Tc=25°C

Tc=80°C

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VCE=1200V, VGE=0V

VCE=0V, VGE=±20V

VCE=20V, IC=35mA

VGE=15V

Ic=35A

VGE=0V, VCE=10V, f=1MHz

VCC=600V

IC=35A

VGE=±15V

RG= 43 Ω

VGE= 0 V

IF=35A

VCE=1200V, VGE=0V

VCE=0V, VGE=±20V

IC=25A

VGE=15V

VCC=600V

IC=25A

VGE=±15V

RG= 68 Ω

VR=1200V

IF=35 A terminal

VGE=0V chip

VR=1600V

T=25°C

T=100°C

T=25/50°C

- - 1.0

- - 200

4.5 6.5 8.5

- 2.25 2.70

- 2.60 -

- 1.95 2.40

- 2.30 -

-3 -

- 0.53 1.20

- 0.43 0.60

- 0.03 -

- 0.37 1.00

- 0.07 0.30

- 2.05 2.40

- 2.20 -

- 1.75 2.10

- 1.90 -

- - 0.35

- - 1.0

- - 200

- 2.40 2.90

- 2.85 -

- 2.10 2.60

- 2.55 -

- 0.53 1.20

- 0.43 0.60

- 0.37 1.00

- 0.07 0.30

- - 1.0

- 1.35 1.70

- 1.25 -

- - 1.0

Electrical characteristics (Tj=25°C unless otherwise specified)

Item Symbol Condition Characteristics Unit

Min. Typ. Max.

Zero gate voltage collector current

Gate-Emitter leakage current

Gate-Emitter threshold voltage

Collector-Emitter saturation voltage

Input capacitance

Turn-on time

Turn-off time

Forward on voltage

Reverse recovery time

Zero gate voltage collector current

Gate-Emitter leakage current

Collector-Emitter saturation voltage

Turn-on time

Turn-off time

Reverse current

Forward on voltage

Reverse current

Resistance

B value

Thermistor Converter Brake Inverter

ICES

IGES

VGE(th)

VCE(sat)

(terminal)

VCE(sat)

(chip)

Cies

ton

tr

tr(i)

toff

tf

VF

(terminal)

VF

(chip)

trr

ICES

IGES

VCE(sat)

(terminal)

VCE(sat)

(chip)

ton

tr

toff

tf

IRRM

VFM

IRRM

R

B

mA

nA

V

nF

µs

V

µs

mA

nA

V

µs

mA

V

mA

Ω

K

Item Symbol Condition Characteristics Unit

Min. Typ. Max.

Inverter IGBT

Inverter FWD

Brake IGBT

Converter Diode

With thermal compound

- - 0.76

- - 1.19

- - 1.07 °C/W

- - 0.90

- 0.05 -

Thermal resistance ( 1 device ) Rth(j-c)

Contact thermal resistance * Rth(c-f)

Thermal resistance Characteristics

IGBT Module 7MBR35UA120

* This is the value which is defined mounting on the additional cooling fin with thermal compound

Equivalent Circuit Schematic

- 5000 -

465 495 520

3305 3375 3450

Tj=25°C

Tj=125°C

Tj=25°C

Tj=125°C

Tj=25°C

Tj=125°C

Tj=25°C

Tj=125°C

Tj=25°C

Tj=125°C

Tj=25°C

Tj=125°C

89

[Thermistor]

[Converter] 21(P)

23(N)

1(R) 2(S) 3(T)

[Brake] [Inverter]

22(P1)

7(B)

14(Gb)

24(N1)

20(Gu)

19(Eu)

13(Gx)

18(Gv)

17(Ev)

4(U)

12(Gy)

5(V) 6(W)

16(Gw)

11(Gz)

10(En)

15(Ew)

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IGBT Module 7MBR35UA120

Characteristics (Representative)

Collector-Emitter voltage vs. Gate-Emitter voltage (typ.)

[ Inverter ] [ Inverter ]

Collector current vs. Collector-Emitter voltage (typ.)

Tj= 125°C / chip

Collector current vs. Collector-Emitter voltage (typ.)

Tj= 25°C / chip

Collector current vs. Collector-Emitter voltage (typ.)

VGE=15V / chip

VGE=0V, f= 1MHz, Tj= 25°C

Capacitance vs. Collector-Emitter voltage (typ.)

[ Inverter ] [ Inverter ]

Tj=25°C / chip

Vcc=600V, Ic=35A, Tj= 25°C

Dynamic Gate charge (typ.)

0

10

20

30

40

50

60

012345

C

o

ll

ector current :

I

c

[A]

Collector-Emitter voltage : VCE [V]

VGE=20V 15V 12V

10V

8V

0

10

20

30

40

50

60

012345

Collector current : Ic [A]

Collector-Emitter voltage : VCE [V]

VGE=20V 15V 12V

10V

8V

0

10

20

30

40

50

60

012345

Collector current : Ic [A]

Collector-Emitter voltage : VCE [V]

Tj=125°C

Tj=25°C

0

2

4

6

8

10

5 10152025

Collector - Emitter voltage : VCE [ V ]

Gate - Emitter voltage : VGE [ V ]

Ic=50A

Ic=25A

Ic= 12.5A

0.1

1.0

10.0

0102030

Capacitance : Cies, Coes, Cres [ nF ]

Collector-Emitter voltage : VCE [V]

Cies

Coes

Cres

0 30 60 90 120 150

Collector-Emitter voltage : VCE [ 200V/div ]

Gate - Emitter voltage : VGE [ 5V/div ]

Gate charge : Qg [ nC ]

0

VGE

VCE

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IGBT Module 7MBR35UA120

[ Inverter ] [ Inverter ]

Switching time vs. Collector current (typ.)

Vcc=600V, VGE=±15V, Rg=43Ω, Tj= 25°C

Switching time vs. Collector current (typ.)

Vcc=600V, VGE=±15V, Rg=43Ω, Tj=125°C

Reverse bias safe operating area (max.)

Vcc=600V, Ic=35A, VGE=±15V, Tj= 125°C

Switching time vs. Gate resistance (typ.)

Vcc=600V, VGE=±15V, Rg=43Ω

Switching loss vs. Gate resistance (typ.)

[ Inverter ] [ Inverter ]

Vcc=600V, Ic=35A, VGE=±15V, Tj= 25°C

Switching loss vs. Collector current (typ.)

+VGE=15V,-VGE <= 15V, RG >= 43Ω ,Tj <= 125°C

10

100

1000

10000

01020304050

Switching time : ton, tr, toff, tf [ nsec ]

Collector current : Ic [ A ]

ton

tr

toff

tf

10

100

1000

10000

0 1020304050

Switching time : ton, tr, toff, tf [ nsec ]

Collector current : Ic [ A ]

toff

ton

tr

tf

10

100

1000

10000

10.0 100.0 1000.0

Switching time : ton, tr, toff, tf [ nsec ]

Gate resistance : Rg [ Ω ]

tr

tf

toff

ton

0

2

4

6

8

10

12

14

0 102030405060

Switching loss : Eon, Eoff, Err [ mJ/pulse ]

Collector current : Ic [ A ]

Eon(125°C)

Eon(25°C)

Eoff(125°C)

Err(125°C)

Err(25°C)

Eoff(25°C)

0

5

10

15

20

10.0 100.0 1000.0

Switching loss : Eon, Eoff, Err [ mJ/pulse ]

Gate resistance : Rg [ Ω ]

Eoff

Err

Eon

0

20

40

60

80

0 400 800 1200

Collector current : Ic [ A ]

Collector - Emitter voltage : VCE [ V ]

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IGBT Module 7MBR35UA120

[ Inverter ] [ Inverter ]

[ Thermistor ]

Reverse recovery characteristics (ty p.)

Vcc=600V, VGE=±15V, Rg=43Ω

Forward current vs. Forward on voltage (typ.)

chip

[ Converter ]

Forward current vs. Forward on voltage (typ.)

Transient thermal resistance (max.) Temperature characteristic (typ .)

0.1

1

10

100

-60 -40 -20 0 20 40 60 80 100 120 140 160 180

Temperature [°C ]

Resistance : R [ kΩ ]

0

10

20

30

40

50

60

01234

Forward current : IF [ A ]

Forward on voltage : VF [ V ]

Tj=125°C

Tj=25°C

10

100

1000

0 1020 3040 50

Reverse recovery current : Irr [ A ]

Reverse recovery time : trr [ nsec ]

Forward current : IF [ A ]

trr (125°C)

trr (25°C)

0.010

0.100

1.000

10.000

0.001 0.010 0.100 1.000

Thermal resistanse : Rth(j-c) [ °C/W ]

Pulse width : Pw [ sec ]

FWD[In v ert er]

IGB T[B rak e]

IGB T[In v erter]

0

10

20

30

40

50

60

0.0 0.5 1.0 1.5 2.0

Forward current : IF [ A ]

Forward on voltage : VFM [ V ]

Tj=125°C

Tj=25°C

Irr (125°C)

Irr (25°C)

Conv.Diode

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IGBT Module 7MBR35UA120

VGE=0V, f= 1MHz, Tj= 25°C

[ Brake ] [ Brake ]

Collector-Emitter voltage vs. Gate-Emitter voltage (typ.)

Collector current vs. Collector-Emitter voltage (typ.)

Tj= 25°C / chip

Collector current vs. Collector-Emitter voltage (typ.)

VGE=15V / chip Tj=25°C / chip

Dynamic Gate charge (typ.)

Vcc=600V, Ic=25A, Tj= 25°C

[ Brake ] [ Brake ]

Collector current vs. Collector-Emitter voltage (typ.)

Tj= 125°C / chip

Capacitance vs. Collector-Emitter voltage (typ.)

0

10

20

30

40

012345

Collector current : Ic [A]

Collector-Emitter voltage : VCE [V]

VGE=20V 15V 12V

10V

8V

0

10

20

30

40

012345

Collector current : Ic [A]

Collector-Emitter voltage : VCE [V]

VGE=20V 15V 12V

10V

8V

0

10

20

30

40

012345

Collector current : Ic [A]

Collector-Emitter voltage : VCE [V]

Tj=125°C

Tj=25°C

0

2

4

6

8

10

5 10152025

Collector - Emitter voltage : VCE [ V ]

Gate - Emitter voltage : VGE [ V ]

Ic=30A

Ic=15A

Ic=7.5A

0.1

1.0

10.0

0 102030

Capacitance : Cies, Coes, Cres [ nF ]

Collector-Emitter voltage : VCE [V]

Cies

Coes

Cres

0306090

Collector-Emitter voltage : VCE [ 200V/div ]

Gate - Emitter voltage : VGE [ 5V/div ]

Gate charge : Qg [ nC ]

0

VGE

VCE

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IGBT Module 7MBR35UA120

Outline Drawings, mm

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