Surface Mount
Dual Matched MMIC Ampli er
Page 2
ISO 9001 ISO 14001 AS 9100 CERTIFIED
Mini-Circuits®
P.O. Box 350166, Brooklyn, New York 11235-0003 (718) 934-4500 Fax (718) 332-4661
The Design Engineers Search Engine Provides ACTUAL Data Instantly at
®
Notes: 1. Performance and quality attributes and conditions not expressly stated in this specification sheet are intended to be excluded and do not form a part of this specification sheet. 2. Electrical specifications
and performance data contained herein are based on Mini-Circuit’s applicable established test performance criteria and measurement instructions. 3. The parts covered by this specification sheet are subject to
Mini-Circuits standard limited warranty and terms and conditions (collectively, “Standard Terms”); Purchasers of this part are entitled to the rights and benefits contained therein. For a full statement of the Standard
Terms and the exclusive rights and remedies thereunder, please visit Mini-Circuits’ website at www.minicircuits.com/MCLStore/terms.jsp.
For detailed performance specs
& shopping online see web site
minicircuits.com
IF/RF MICROWAVE COMPONENTS
Product Features
• Two matched ampli ers in one package
• High IP3, +44 dBm at 0.8 GHz in push-pull con guration
• High IP2, +78 dBm at 0.8 GHz in push-pull con guration
• Gain, 16 dB typ. at 0.8 GHz
• P1dB, +22 dBm typ. at 0.8 GHz
• Low noise gure, 1.8 dB typ. at 0.8 GHz
• May be used as replacement for WJ AH22a,b
Typical Applications
• CATV
• FTTH
• Optical networks
• Base station infrastructure
• Balanced ampli ers
• 75 Ohm push-pull and balanced ampli ers
REV. A
M129883
PHA-22+
MCL NY
130416
.05-1.5 GHz
CASE STYLE: DL1020
PRICE: $7.95 ea. QTY. (20)
PHA-22+
General Description
PHA-22+ is a dual matched wideband high dynamic range ampli er. Enclosed in a 6.0 x 4.9 mm MCLP plastic
package. PHA-22+ is fabricated using E-PHEMT* technology and is ideal for use in balanced and push-pull
ampli ers.
simplifi ed schematic (each of A1, A2) and pin description
Function Pin Number Description
RF IN, A1 1RF input pin. This pin requires the use of an external DC blocking capacitor chosen for the frequency of
operation. (see Application Circuit, Fig 2.)
RF-OUT and DC-IN,
A1 8
RF output and bias pin. DC voltage is present on this pin; therefore a DC blocking capacitor is necessary
for proper operation. An RF choke is needed to feed DC bias without loss of RF signal due to the bias
connection, as shown in “Recommended Application Circuit”, Fig 2
RF IN, A2 4 RF input pin. This pin requires the use of an external DC blocking capacitor chosen for the frequency of
operation. (see Application Circuit, Fig 2.)
RF-OUT and DC-IN,
A2 5
RF output and bias pin. DC voltage is present on this pin; therefore a DC blocking capacitor is necessary
for proper operation. An RF choke is needed to feed DC bias without loss of RF signal due to the bias
connection, as shown in “Recommended Application Circuit”, Fig 2
GND 2,3,6,7 & paddle Connections to ground. Use via holes as shown in “Suggested Layout for PCB Design” to reduce ground
path inductance for best performance.
* Enhancement mode pseudomorphic High Electron Mobility Transistor.
a. Suitability for model replacement within a particular system must be determined by and is solely the responsibility of the customer based on, among other things, electrical performance
criteria, stimulus conditions, application, compatibility with other components and environmental conditions and stresses.
b. The WJ part number is used for identi cation and comparison purposes only.
RF IN
RF IN
RF OUT
and DC IN
RF OUT
and DC IN
A1
A2
RF IN
1
A2
A1
GND
2
GND
7
GND
3
GND
6
RF IN
4
RF OUT
& DC IN
5
RF OUT
& DC IN
8
The +Suffix identifies RoHS Compliance. See our web site
for RoHS Compliance methodologies and qualifications